Si photodiode S10942-01CT RGB color sensor integrated in small and thin package The S10942-01CT is a color sensor molded into a plastic package having a 3-channel (RGB) photodiode sensitive to the Red (λ=590 nm Min.), Green (λ=480 to 600 nm) and Blue (λ=400 to 540 nm) regions of the spectrum. When compared to the previous model (S9702), the S10942-01CT is significantly miniaturized the package size by 80% in cubic volume and PC board mount space by 77% in area. The S10942-01CT is ideal for RGB-LCD backlight monitors installed in such as mobile phones. Features Applications Small, thin package: 3.0 × 1.6 × 10 tmm Portable or mobile equipment 3-channel (RGB) Si photodiode RGB-LCD backlight monitors Photosensitive area: 1 × 1 mm/3-segment (RGB) Detectors for various light sources RoHS compliant Color detection Surface mount type Absolute maximum ratings Parameter Symbol Value Unit Reverse voltage 10 V VR max Operating temperature Topr -25 to +85 °C Storage temperature Tstg -40 to +85 °C Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta= 25 °C, per element ) Parameter Spectral response range Photosensitivity Dark current Temperature coefficient of ID Rise time Terminal capacitance Symbol λ S ID TCID tr Ct Condition Min. Blue - Green - Red Blue (λ=460 nm) Green (λ=540 nm) Red (λ=640 nm) VR=1 V, All elements VR=0 V, RL=1 kΩ, 10 to 90% VR=0 V, f=10 kHz 0.16 0.20 0.40 5 www.hamamatsu.com Typ. 400 to 540 800 to 1000 480 to 600 760 to 1000 590 to 1000 0.21 0.25 0.45 1 1.12 0.1 12 Max. Unit 0.26 0.30 0.50 50 1.0 25 nm A/W pA times/°C μs pF 1 Si photodiode S10942-01CT Spectral response Linearity (Typ. Ta=25 °C) 0.5 (Typ. Ta=25 °C, VR=0 V, 2856 K) 1 mA Red 100 μA Short circuit current Photosensitivity (A/W) 0.4 Green 0.3 Blue 0.2 Red 10 μA Green 1 μA Blue 100 nA 0.1 10 nA 100 0 200 300 400 500 600 700 800 900 1000 1100 1200 1000 10000 100000 Illuminance (lx) Wavelength (nm) KSPDB0287EA KSPDB0329EA Since this photodiode has sensitivity in the infrared region, infrared light must be filtered out as needed. Terminal capacitance vs. reverse voltage Dark current vs. reverse voltage (Typ. Ta=25 °C) 100 pA (Typ. Ta=25 °C) 100 pF Terminal capacitance Dark current 10 pA 1 pA 100 fA 10 fA 0.01 0.1 1 10 100 10 pF 1 pF 100 fF 0.1 1 10 100 Reverse voltage (V) Reverse voltage (V) KSPDB0252EA KSPDB0253EA 2 Si photodiode S10942-01CT Dimensional outline (uint: mm) (3 ×) anode index B 0.4 0.03 R 0.3 Photosensitive surface 1.0 1.0 Photosensitive area (0.29) *2 Anode (green) Anode (red) Cathode common Anode (blue) 0.65 1.5 0.65 0.4 Tolerance unless otherwise noted: ±0.2 Chip position accuracy with respect to the package dimensions marked *1 X, Y≤±0.3 Values in parentheses indicate reference value. *2: Do not allow metal/conductive objects to contact the part where the wiring is exposed. Doing so may cause short circuits. Electrode Standard packing: reel (3000 pcs/reel) 0.9 0.9 1.0 G 0.6 1.6*1 G B R 0.03 0.62 1.5 0.62 0.6 3.0*1 Recommended land pattern KSPDA0186EB Measured example of temperature profile with our hot-air reflow oven for product testing This product supports lead-free soldering. After unpacking, store it in an environment at a temperature of 30 °C or less and a humidity of 60% or less, and perform soldering within 24 hours. 300 °C 245 °C max. Temperature 230 °C 190 °C 170 °C Preheat 60 ŵŰġ120 s Soldering 40 s max. Time KSPDB0139EA 3 Si photodiode S10942-01CT Lineup of RGB color sensors 1.0 × 1.0 3 × 4 × 1.3t 4 pin (filter 0.75t) * ϕ2.0 4 × 4.8 × 1.8t 6 pin (filter 0.75t) S10917-35GT Photodiode 1.0 × 1.0 3 × 1.6 × 1.0t COB (on-chip filter) S10942-01CT Photodiode 1.0 × 1.0 3 × 1.6 × 1.0t COB (on-chip filter) S9706 Digital photo IC 1.2 × 1.2 4 × 4.8 × 1.8t 6 pin (filter 0.75t) S11012-01CR Digital photo IC 1.2 × 1.2 3.43 × 3.8 × 1.6t COB (on-chip filter) S11059-02DT /-03DS I2C compatible color sensor 0.56 × 1.22 3 × 4.2 ×1.3t 10 pin (on-chip filter) B G R B G R IR 465 540 615 Photosensitivity B G R B G R B G R B G R * 460 530 615 855 B G R B G R B G R IR Photo 0.18 (A/W) [λ=460 nm] 0.23 (A/W) [λ=540 nm] 0.16 (A/W) [λ=620 nm] 0.18 (A/W) [λ=460 nm] 0.23 (A/W) [λ=540 nm] 0.16 (A/W) [λ=620 nm] 0.2 (A/W) [λ=460 nm] 0.23 (A/W) [λ=540 nm] 0.17 (A/W) [λ=620 nm] 0.21 (A/W) [λ=460 nm] 0.25 (A/W) [λ=540 nm] 0.45 (A/W) [λ=640 nm] B 0.21 (LSB/lx) 1.9 (LSB/lx) G 0.45 (LSB/lx) 4.1 (LSB/lx) R 0.64 (LSB/lx) 5.8 (LSB/lx) B 0.3 (LSB/lx) 2.6 (LSB/lx) G 0.6 (LSB/lx) 5.3 (LSB/lx) R 12.9 (LSB/lx) 1.4 (LSB/lx) B 44.8 (count/lx) 4.4 (count/lx) G 85.0 (count/lx) 8.3 (count/lx) R 117.0 (count/lx) 11.2 (count/lx) IR 30.0 (count/lx) 3.0 (count/lx) High Photodiode (mm) High S9702 (mm) High Photodiode Package Low S9032-02 Peak sensitivity wavelength (nm) B 460 G 540 R 620 B 460 G 540 R 620 B 460 G 540 R 620 Photosensitive area Low Type Low Type no. * Refer to the spectral response of each product’s datasheet. Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Metal, ceramic, plastic package products ∙ Surface mount type products Information described in this material is current as of February, 2016. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KSPD1079E06 Feb. 2016 DN 4