Si photodiode S9032-02 RGB color sensor The S9032-02 is a color sensor molded into a plastic package having a 3-channel (RGB) photodiode sensitive to the blue (λp=460 nm), green (λp=540 nm) and red (λp=620 nm) regions of the spectrum. The S9032-02 has a 3-segment (RGB) circular photosensitive area of ϕ2 mm. Features Applications 3-channel (RGB) Si photodiode Color adjustment for LED back light system for LCD Surface-mount small plastic package Color adjustment for LCD projector Spectral response range close to the human eye sensitivity Color tester No sensitivity in the near IR region Color detection Photosensitive area: 3-segment (RGB) circular photosensitive area of ϕ2 mm Absolute maximum ratings Parameter Symbol Value Unit Reverse voltage 10 V VR max Operating temperature Topr -25 to +85 °C Storage temperature Tstg -40 to +85 °C Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta= 25 °C, per element ) Parameter Spectral response range Symbol λ Condition Blue Green Red Blue Green Red Peak sensitivity wavelength λp Photosensitivity S λ=λp Dark current ID VR=1 V All elements Temperature coefficient of ID Blue Green Red TCID Rise time tr Terminal capacitance Ct VR=0 V, RL=1 kΩ 10 to 90% VR=0 V f=10 kHz Min. 0.13 0.18 0.11 Typ. 400 to 540 480 to 600 590 to 720 460 540 620 0.18 0.23 0.16 Max. - Unit - 5 100 pA - 1.12 - times/°C - 0.2 1.0 μs - 40 80 pF nm nm A/W This product does not support lead-free soldering. For details on reflow soldering conditions, please contact our sales office. www.hamamatsu.com 1 Si photodiode S9032-02 Spectral response Linearity (Typ. Ta=25 °C) 0.25 (Typ. Ta=25 °C, VR=0 V, 2856 K) 10 μA Green Blue 1 μA Short circuit current Photosensitivity (A/W) 0.20 0.15 Red 0.10 Red 100 nA Green 10 nA 0.05 0 300 Blue 400 500 600 700 1 nA 10 800 Wavelength (nm) 100 1000 Illuminance (lx) KSPDB0246EA KSPDB0326EA Dark current vs. reverse voltage Terminal capacitance vs. reverse voltage (Typ. Ta=25 °C) 1 nA 10000 (Typ. Ta=25 °C) 1 nF Terminal capacitance Dark current 100 pA 10 pA 1 pA 100 fA 0.01 0.1 1 10 100 Reverse voltage (V) 100 pF 10 pF 1 pF 0.1 1 10 100 Reverse voltage (V) KSPDB0218EA KSPDB0219EA 2 Si photodiode S9032-02 Dimensional outline (uint: mm) 1.5 ± 0.4 4.0* 1.5 ± 0.4 4.8* (2 ×) 5° (2 ×) 10° 1.27 R B G 4.7* Photosensitive surface 5.0 ± 0.2 (Including burr) 4.1 ± 0.2 (Including burr) 1.27 Filter 3.2 × 3.2 × 0.75 t (6 ×) 0.5 Photosensitive area 0.4 0.8 7.0 ± 0.3 0.7 ± 0.3 0.7 ± 0.3 Photosensitive surface Anode (red) Cathode common Anode (green) N/C Cathode common Anode (blue) 0.25 0.1 ± 0.1 (2 ×) 10° 1.8 (2 ×) 5° Tolerance unless otherwise noted: ±0.1, ±2° Shaded area indicates burr. ϕ2.0 depth 0.15 max. Chip position accuracy with respect to the package dimensions marked * X, Y≤±0.2, θ≤±2° Lead surface finish: silver plating Packing: stick (50 pcs/stick) KSPDA0162EB Note: If excessive vibration is continuously applied to the glass filter, there is a risk that the filter may come off, so secure the glass filter with a holder. Application example Optical feedback of backlight for TFT-LCD using a color sensor module C9303-04 (integrated with the S9032-02) Color controller C9303-04 Luminance/ light coordinate setting Mixing light guide & LCD panel Red driver Green driver LED LIGHT SOURCE Blue driver LED: Made by Lumileds (LUXEON), http://www.lumileds.com/ KACCC0289EA 3 Si photodiode S9032-02 Line-up of RGB color sensors S10942-01CT Photodiode 1.0 × 1.0 3 × 1.6 × 1.0t COB (on-chip filter) * S9706 Digital photo IC 1.2 × 1.2 4 × 4.8 × 1.8t 6 pin (filter 0.75t) S11012-01CR Digital photo IC 1.2 × 1.2 3.43 × 3.8 × 1.6t COB (on-chip filter) S11059-02DT /-03DS I2C compatible color sensor 0.56 × 1.22 3 × 4.2 ×1.3t 10 pin (on-chip filter) Photodiode ϕ2.0 4 × 4.8 × 1.8t 6 pin (filter 0.75t) B G R B G R IR 465 540 615 Photosensitivity B G R B G R B G R B G R * Low (mm) 460 530 615 855 Low (mm) B G R B G R B G R IR Photo 0.18 (A/W) [λ=460 nm] 0.23 (A/W) [λ=540 nm] 0.16 (A/W) [λ=620 nm] 0.18 (A/W) [λ=460 nm] 0.23 (A/W) [λ=540 nm] 0.16 (A/W) [λ=620 nm] 0.2 (A/W) [λ=460 nm] 0.23 (A/W) [λ=540 nm] 0.17 (A/W) [λ=620 nm] 0.21 (A/W) [λ=460 nm] 0.25 (A/W) [λ=540 nm] 0.45 (A/W) [λ=640 nm] B 0.21 (LSB/lx) 1.9 (LSB/lx) G 0.45 (LSB/lx) 4.1 (LSB/lx) R 0.64 (LSB/lx) 5.8 (LSB/lx) B 0.3 (LSB/lx) 2.6 (LSB/lx) G 0.6 (LSB/lx) 5.3 (LSB/lx) R 12.9 (LSB/lx) 1.4 (LSB/lx) B 44.8 (count/lx) 4.4 (count/lx) G 85.0 (count/lx) 8.3 (count/lx) R 117.0 (count/lx) 11.2 (count/lx) IR 30.0 (count/lx) 3.0 (count/lx) High Photodiode 3 × 1.6 × 1.0t COB (on-chip filter) Package High S10917-35GT 1.0 × 1.0 S9702 Photosensitive area High 1.0 × 1.0 S9032-02 Type Low Photodiode 3 × 4 × 1.3t 4 pin (filter 0.75t) Peak sensitivity wavelength (nm) B 460 G 540 R 620 B 460 G 540 R 620 B 460 G 540 R 620 Type no. * Refer to the spectral response of each product’s datasheet. Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Metal, ceramic, plastic package products ∙ Surface mount type products Information described in this material is current as of February, 2016. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KSPD1067E10 Feb. 2016 DN 4