Si photodiode S9702 RGB color sensor The S9702 is a color sensor molded into a plastic package having a 3-channel (RGB) photodiode sensitive to the blue (λp=460 nm), green (λp=540 nm) and red (λp=620 nm) regions of the spectrum. The S9702 has a 3-segment (RGB) photosensitive area of 1 mm. When compared to the previous model (S9032-02), the S9702 is significantly miniaturized (package size 55% less in cubic volume, PC board mount space 43% less in area). Features Applications 3-channel (RGB) Si photodiode Portable or mobile equipment Surface-mount small plastic package RGB-LCD backlight monitors Spectral response range close to the human eye sensitivity Detectors for various light sources No sensitivity in the near IR region Color detection Photosensitive area: 3-segment (RGB) photosensitive area of 1 mm Absolute maximum ratings Parameter Symbol Value Unit Reverse voltage 10 V VR max Operating temperature Topr -25 to +85 °C Storage temperature Tstg -40 to +85 °C Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta= 25 °C, per element ) Parameter Symbol Condition Blue Green Red Blue Green Red Spectral response range λ Peak sensitivity wavelength λp Photosensitivity S λ=λp Dark current ID VR=1 V All elements Temperature coefficient of ID Blue Green Red TCID Rise time tr Terminal capacitance Ct VR=0 V, RL=1 kΩ 10 to 90% VR=0 V, f=10 kHz Min. 0.13 0.18 0.11 Typ. 400 to 540 480 to 600 590 to 720 460 540 620 0.18 0.23 0.16 Max. - Unit - 1 50 pA - 1.12 - times/°C - 0.1 1.0 μs - 12 25 pF nm nm A/W This product does not support lead-free soldering. For details on reflow soldering conditions, please contact our sales office. www.hamamatsu.com 1 Si photodiode S9702 Spectral response Linearity (Typ. Ta=25 °C) 0.25 (Typ. Ta=25 °C, VR=0 V, 2856 K) 10 μA Green Blue 1 μA Short circuit current Photosensitivity (A/W) 0.20 0.15 Red 0.10 0.05 0 300 Red 100 nA Green 10 nA Blue 1 nA 400 500 600 700 100 pA 10 800 Wavelength (nm) 100 1000 Illuminance (lx) KSPDB0246EA KSPDB0327EA Dark current vs. reverse voltage Terminal capacitance vs. reverse voltage (Typ. Ta=25 °C) 100 pA 10000 (Typ. Ta=25 °C) 100 pF Terminal capacitance Dark current 10 pA 1 pA 100 fA 10 fA 0.01 0.1 1 10 100 Reverse voltage (V) 10 pF 1 pF 100 fF 0.1 1 10 100 Reverse voltage (V) KSPDB0252EA KSPDB0253EA 2 Si photodiode S9702 Index 1.0 ± 0.4 3.0* 1.0 ± 0.4 Photosensitive surface 0.03 0.03 R G 1.0 3.9 3.4 B 3.8 BRG Photosensitive area 4.2 ± 0.2 (Including burr) 4.0* 3.2 ± 0.2 (Including burr) 2.54 (4 ×) 0.35 (4 ×) 0.45 Dimensional outline (uint: mm) 1.0 0.05 Photosensitive area 0.35 0.75 5.0 ± 0.3 3.0* Filter 2.2 × 2.2 × 0.75 t 2.8 0.7 1.3 0.45 ± 0.3 Anode (blue) Cathode (common) Anode (red) Anode (green) 2.4 0.1 0.15 0.45 ± 0.3 2.9 Tolerance unless otherwise noted: ±0.1, ±2° Shaded area indicates burr. Chip position accuracy with respect to the package dimensions marked * X, Y≤±0.2, θ≤±2° Lead surface finish: silver plating Packing: stick (100 pcs/stick) KSPDA0170EC Note: If excessive vibration is continuously applied to the glass filter, there is a risk that the filter may come off, so secure the glass filter with a holder. 3 Si photodiode S9702 Line-up of RGB color sensors S10917-35GT Photodiode 1.0 × 1.0 3 × 1.6 × 1.0t COB (on-chip filter) 1.0 × 1.0 3 × 1.6 × 1.0t COB (on-chip filter) S10942-01CT Photodiode S9706 Digital photo IC 1.2 × 1.2 4 × 4.8 × 1.8t 6-pin (filter 0.75t) S11012-01CR Digital photo IC × 1.2 × 1.2 3.43 × 3.8 × 1.6t COB (on-chip filter) 0.56 × 1.22 3 × 4.2 × 1.3t 10-pin (on-chip filter) 1.22 × 0.56 1.68 × 1.18 × 0.58t WL-CSP (on-chip filter) S11059-02DT I2C compatible /-03DS color sensor I2C interfaceS11059-01WT compatible color sensor * B G R 465 540 615 * B G R IR B G R IR 460 530 615 855 460 530 615 855 B G R B G R B G R IR B G R IR High 1.0 × 1.0 S9702 0.18 (A/W) [λ=460 nm] 0.23 (A/W) [λ=540 nm] 0.16 (A/W) [λ=620 nm] 0.18 (A/W) [λ=460 nm] 0.23 (A/W) [λ=540 nm] 0.16 (A/W) [λ=620 nm] 0.2 (A/W) [λ=460 nm] 0.23 (A/W) [λ=540 nm] 0.17 (A/W) [λ=620 nm] 0.21 (A/W) [λ=460 nm] 0.25 (A/W) [λ=540 nm] 0.45 (A/W) [λ=640 nm] 0.21 (LSB/lx) B 1.9 (LSB/lx) 0.45 (LSB/lx) G 4.1 (LSB/lx) R 0.64 (LSB/lx) 5.8 (LSB/lx) B 0.3 (LSB/lx) 2.6 (LSB/lx) G 0.6 (LSB/lx) 5.3 (LSB/lx) 1.4 (LSB/lx) R 12.9 (LSB/lx) 4.4 (count/lx) B 44.8 (count/lx) 8.3 (count/lx) G 85.0 (count/lx) 11.2 (count/lx) R 117.0 (count/lx) 3.0 (count/lx) IR 30.0 (count/lx) 3.35 (count/lx) B 31.7 (count/lx) 7.61 (count/lx) G 76.2 (count/lx) 9.48 (count/lx) R 94.5 (count/lx) 1.66 (count/lx) IR 15.3 (count/lx) High Photodiode 3 × 4 × 1.3t 4-pin (filter 0.75t) B G R B G R B G R B G R High ϕ2.0 Photo High Photodiode Photosensitivity Low (mm) 4 × 4.8 × 1.8t 6-pin (filter 0.75t) Low (mm) Peak sensitivity wavelength (nm) B 460 G 540 R 620 B 460 G 540 R 620 B 460 G 540 R 620 Low S9032-02 Type Package Low Type no. Photosensitive area size * Refer to "Spectral response" of each datasheet. Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Notice ∙ Metal, ceramic, Plastic Package products/Precautions ∙ Surface mount type products/Precautions Information described in this material is current as of July, 2014. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KSPD1071E10 Jul. 2014 DN 4