Si photodiodes S1226 series For UV to visible, precision photometry; suppressed near IR sensitivity These Si photodiodes have suppressed IR sensitivity. They are suitable for low-light-level detection in analysis and the like. Features Applications Suppressed near IR sensitivity Analytical equipment High sensitivity in UV region (quartz glass type) Optical measurement equipment, etc. Low dark current High reliability Structure / Absolute maximum ratings Type no. Dimensional outline/ Window material*1 S1226-18BQ*2 S1226-18BK S1226-5BQ*2 S1226-5BK S1226-44BQ*2 S1226-44BK S1226-8BQ*2 S1226-8BK (1)/Q (2)/K (3)/Q (4)/K (5)/Q (6)/K (7)/Q (8)/K Photosensitive area size Package Reverse voltage VR max (V) (mm) TO-18 1.1 × 1.1 2.4 × 2.4 TO-5 5 3.6 × 3.6 TO-8 5.8 × 5.8 Absolute maximum ratings Operating temperature Topr (°C) -20 to +60 -40 to +100 -20 to +60 -40 to +100 -20 to +60 -40 to +100 -20 to +60 -40 to +100 Storage temperature Tstg (°C) -55 to +80 -55 to +125 -55 to +80 -55 to +125 -55 to +80 -55 to +125 -55 to +80 -55 to +125 *1: Window material, K=borosilicate glass, Q=quartz glass *2: Refer to “Precautions against UV light exposure.” Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Type no. Photosensitivity S (A/W) Spectral Peak response sensitivity range wavelength λ λp S1226-18BQ S1226-18BK S1226-5BQ S1226-5BK S1226-44BQ S1226-44BK S1226-8BQ S1226-8BK He-Ne laser 633 Min. Typ. Typ. nm (μA) (μA) 0.12 0.5 0.66 0.12 2.2 2.9 0.34 0.12 4.4 5.9 0.12 12 16 - 200 nm λp (nm) 190 to 1000 320 to 1000 190 to 1000 320 to 1000 190 to 1000 320 to 1000 190 to 1000 320 to 1000 (nm) Min. 720 0.10 0.10 0.36 0.10 0.10 - Short circuit current Isc 100 lx Terminal Dark Noise Temp. Rise time Shunt capacitance current coefficient tr resistance equivalent Ct ID power of ID VR=0 V Rsh VR=10 mV VR=0 V NEP TCID RL=1 kΩ VR=10 mV max. f=10 kHz (times/°C) Min. Typ. (GΩ) (GΩ) (W/Hz1/2) (μs) (pF) 0.15 35 5 50 1.6 × 10-15 0.5 160 2 20 2.5 × 10-15 10 1 500 1 10 3.6 × 10-15 20 2 1200 0.5 5 5.0 × 10-15 (pA) 2 5 1.12 www.hamamatsu.com 1 Si photodiodes S1226 series Spectral response Photosensitivity temperature characteristic (Typ. Ta =25 °C) 0.7 Temperature coefficient (%/°C) Photosensitivity (A/W) 0.6 0.5 0.4 0.3 S1226-BQ 0.2 0.1 (Typ. ) +1.5 +1.0 +0.5 0 S1226-BK 0 190 400 600 800 1000 Wavelength (nm) -0.5 190 400 600 800 1000 Wavelength (nm) KSPDB0106EA KSPDB0030EA Dark current vs. reverse voltage (Typ. Ta=25 °C) 1 nA Dark current 100 pA S1226-44BQ/BK 10 pA S1226-8BQ/BK 1 pA S1226-5BQ/BK S1226-18BQ/BK 100 fA 0.01 0.1 1 10 Reverse voltage (V) KSPDB0108EC 2 Si photodiodes S1226 series Dimensional outlines (unit: mm) 4.7 ± 0.1 X X 5.4 ± 0.2 4.7 ± 0.1 Y 5.4 ± 0.2 Y Window 3.0 ± 0.1 (2) S1226-18BK Window 3.0 ± 0.1 (1) S1226-18BQ 3.6 ± 0.2 Glass Glass Photosensitive surface 14 14 2.4 2.4 Photosensitive surface 3.6 ± 0.2 Photosensitive area 1.1 × 1.1 Photosensitive area 1.1 × 1.1 ȁ0.45 Lead ȁ0.45 Lead 2.54 ± 0.2 2.54 ± 0.2 Connected to case Distance from photosensitive area center to cap center -0.3≤X≤+0.3 -0.3≤Y≤+0.3 Connected to case Distance from photosensitive area center to cap center -0.3≤X≤+0.3 -0.3≤Y≤+0.3 The glass window may extend a maximum of 0.2 mm above the upper surface of the cap. KSPDA0113EE KSPDA0201EB X 9.1 ± 0.2 8.1 ± 0.1 X 9.1 ± 0.2 Y 8.1 ± 0.1 Y Window 5.9 ± 0.1 (4) S1226-5BK Window 5.9 ± 0.1 (3) S1226-5BQ 4.1 ± 0.2 Glass Glass Photosensitive surface 20 20 2.9 2.9 Photosensitive surface 4.1 ± 0.2 Photosensitive area 2.4 × 2.4 Photosensitive area 2.4 × 2.4 0.45 Lead 0.45 Lead 5.08 ± 0.2 5.08 ± 0.2 Distance from photosensitive area center to cap center -0.3≤X≤+0.3 -0.3≤Y≤+0.3 Connected to case Distance from photosensitive area center to cap center -0.3≤X≤+0.3 -0.3≤Y≤+0.3 Connected to case KSPDA0202EB The glass window may extend a maximum of 0.2 mm above the upper surface of the cap. KSPDA0114ED 3 Si photodiodes S1226 series Photosensitive area 3.6 × 3.6 Photosensitive area 3.6 × 3.6 Glass 4.1 ± 0.2 0.3 9.1 ± 0.2 0.3 Glass Photosensitive surface 20 20 2.9 2.9 Photosensitive surface 8.1 ± 0.1 X 4.1 ± 0.2 X 9.1 ± 0.2 Y 8.1 ± 0.1 Y Window 5.9 ± 0.1 (6) S1226-44BK Window 5.9 ± 0.1 (5) S1226-44BQ 0.45 Lead 0.45 Lead 5.08 ± 0.2 5.08 ± 0.2 Distance from photosensitive area center to cap center -0.6≤X≤0 -0.3≤Y≤+0.3 Connected to case Distance from photosensitive area center to cap center -0.6≤X≤0 -0.3≤Y≤+0.3 KSPDA0203EB Connected to case The glass window may extend a maximum of 0.2 mm above the upper surface of the cap. KSPDA0195EC 4 Si photodiodes S1226 series 13.9 ± 0.2 X Photosensitive area 5.8 × 5.8 Photosensitive area 5.8 × 5.8 0.085 Photosensitive surface 15 15 1.9 Glass 5.0 ± 0.2 5.0 ± 0.2 Glass 0.085 1.9 Photosensitive surface 12.35 ± 0.1 X 13.9 ± 0.2 Y 12.35 ± 0.1 Y Window 10.5 ± 0.1 (8) S1226-8BK Window 10.5 ± 0.1 (7) S1226-8BQ ȁ0.45 Lead ġġġġ0.45 Lead 7.5 ± 0.2 7.5 ± 0.2 Index mark ( 1.4) Connected to case Index mark ( 1.4) Distance from photosensitive area center to cap center -0.315≤X≤+0.485 -0.4≤Y≤+0.4 KSPDA0204EB Connected to case Distance from photosensitive area center to cap center -0.315≤X≤0.485 -0.4≤Y≤+0.4 The glass window may extend a maximum of 0.2 mm above the upper surface of the cap. KSPDA0115ED Precautions against UV light exposure ∙ When UV light irradiation is applied, the product characteristics may degrade. Such examples include degradation of the product’s UV sensitivity and increase in dark current. This phenomenon varies depending on the irradiation level, irradiation intensity, usage time, and ambient environment and also varies depending on the product model. Before employing the product, we recommend that you check the tolerance under the ultraviolet light environment that the product will be used in. ∙ Exposure to UV light may cause the characteristics to degrade due to gas released from the resin bonding the product’s component materials. As such, we recommend that you avoid applying UV light directly on the resin and apply it on only the inside of the photosensitive area by using an aperture or the like. Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Metal, ceramic, plastic package products Technical information ∙ Si photodiode/Application circuit examples 5 Si photodiodes S1226 series Information described in this material is current as of October, 2015. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KSPD1034E09 Oct. 2015 DN 6