Si photodiodes S1336 series UV to near IR for precision photometry These Si photodiodes have sensitivity in the UV to near IR range. They are suitable for low-light-level detection in analysis and the like. Features Applications High sensitivity in UV range Analytical instruments Low capacitance Optical measurement equipment High reliability Structure / Absolute maximum ratings Type no. Dimensional outline/ Window material*1 S1336-18BQ*2 S1336-18BK S1336-5BQ*2 S1336-5BK S1336-44BQ*2 S1336-44BK S1336-8BQ*2 S1336-8BK (1)/Q (2)/K (3)/Q (4)/K (5)/Q (6)/K (7)/Q (8)/K Package Photosensitive area size (mm) TO-18 Absolute maximum ratings Operating Storage Reverse voltage temperature temperature VR max Topr Tstg (V) (°C) (°C) -20 to +60 -40 to +100 -20 to +60 -40 to +100 -20 to +60 -40 to +100 -20 to +60 -40 to +100 1.1 × 1.1 2.4 × 2.4 5 TO-5 3.6 × 3.6 TO-8 5.8 × 5.8 -55 to +80 -55 to +125 -55 to +80 -55 to +125 -55 to +80 -55 to +125 -55 to +80 -55 to +125 *1: Window material K=borosilicate glass, Q=quartz glass *2: Refer to “Precautions against UV light exposure.” Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Type no. Spectral Peak response sensitivity range wavelength λ λp Photosensitivity S (A/W) S1336-18BQ S1336-18BK S1336-5BQ S1336-5BK S1336-44BQ S1336-44BK S1336-8BQ S1336-8BK He-Ne laser 633 Min. Typ. Typ. nm (μA) (μA) 0.12 1 1.2 0.9 1.0 0.12 4 5 0.33 0.12 8 10 0.12 22 28 - 200 nm λp (nm) 190 to 1100 320 to 1100 190 to 1100 320 to 1100 190 to 1100 320 to 1100 190 to 1100 320 to 1100 (nm) Min. 960 0.10 0.10 0.5 0.10 0.10 - Short circuit current Isc 100 lx Terminal Dark Noise Temp. Rise time Shunt capacitance current coefficient tr resistance equivalent Ct ID power of ID VR=0 V Rsh VR=10 mV VR=0 V NEP TCID RL=1 kΩ VR=10 mV max. f=10 kHz (times/°C) Min. Typ. (GΩ) (GΩ) (W/Hz1/2) (μs) (pF) 20 0.1 20 0.5 2 5.7 × 10-15 30 0.2 65 0.3 1 8.1 × 10-15 50 0.5 150 0.2 0.6 1.0 × 10-14 100 1 380 0.1 0.4 1.3 × 10-14 (pA) 1.15 www.hamamatsu.com 1 Si photodiodes S1336 series Photosensitivity temperature characteristics Spectral response (Typ. Ta =25 °C) 0.7 Temperature coefficient (%/°C) Photosensitivity (A/W) 0.6 0.5 0.4 0.3 S1336-BQ 0.2 0.1 (Typ.) +1.5 +1.0 +0.5 0 S1336-BK 190 400 600 800 -0.5 190 1000 Wavelength (nm) KSPDB0098EA 400 600 800 Wavelength (nm) 1000 KSPDB0053EB Dark current vs. reverse voltage (Typ. Ta=25 °C) 10 nA S1336-8BQ/BK Dark current 1 nA 100 pA 10 pA S1336-18BQ/BK S1336-44BQ/BK 1 pA 100 fA 0.01 S1336-5BQ/BK 0.1 1 10 Reverse voltage (V) KSPDB0100EA 2 Si photodiodes S1336 series Dimensional outlines (unit: mm) 5.4 ± 0.2 X 4.7 ± 0.1 Y 5.4 ± 0.2 Window 3.0 ± 0.1 Y Window 3.0 ± 0.1 (2) S1336-18BK 4.7 ± 0.1 (1) S1336-18BQ X Photosensitive area 1.1 × 1.1 Photosensitive area 1.1 × 1.1 Photosensitive surface 14 14 2.3 2.3 Photosensitive surface 3.6 ± 0.2 Glass 3.6 ± 0.2 Glass 0.45 Lead 0.45 Lead 2.54 ± 0.2 2.54 ± 0.2 Distance from photosensitive area center to cap center -0.3≤X≤+0.3 -0.3≤Y≤+0.3 Distance from photosensitive area center to cap center -0.3≤X≤+0.3 -0.3≤Y≤+0.3 Connected to case Connected to case The glass window may extend a maximum of 0.2 mm above the upper surface of the cap. KSPDA0197EB X Photosensitive area 2.4 × 2.4 9.1 ± 0.2 8.1 ± 0.1 X 9.1 ± 0.2 Y 8.1 ± 0.1 Y Window 5.9 ± 0.1 (4) S1336-5BK Window 5.9 ± 0.1 (3) S1336-5BQ KSPDA0191EC Glass 0.45 Lead 20 20 2.8 2.8 Photosensitive surface 4.1 ± 0.2 Glass Photosensitive surface 4.1 ± 0.2 Photosensitive area 2.4 × 2.4 0.45 Lead 5.08 ± 0.2 5.08 ± 0.2 Connected to case Distance from photosensitive area center to cap center -0.3≤X≤+0.3 -0.3≤Y≤+0.3 Distance from photosensitive area center to cap center -0.3≤X≤+0.3 -0.3≤Y≤+0.3 Connected to case KSPDA0198EB The glass window may extend a maximum of 0.2 mm above the upper surface of the cap. KSPDA0192EC 3 Si photodiodes S1336 series Photosensitive area 3.6 × 3.6 Photosensitive area 3.6 × 3.6 4.1 ± 0.2 Glass 0.3 Glass Photosensitive surface 20 20 2.8 2.8 0.45 Lead 0.45 Lead 5.08 ± 0.2 Connected to case 9.1 ± 0.2 X 0.3 Photosensitive surface 8.1 ± 0.1 X 4.1 ± 0.2 8.1 ± 0.1 Y 9.1 ± 0.2 Y Window 5.9 ± 0.1 (6) S1336-44BK Window 5.9 ± 0.1 (5) S1336-44BQ 5.08 ± 0.2 Distance from photosensitive area center to cap center -0.6≤X≤0 -0.3≤Y≤+0.3 Distance from photosensitive area center to cap center -0.6≤X≤0 -0.3≤Y≤+0.3 Connected to case KSPDA0199EB The glass window may extend a maximum of 0.2 mm above the upper surface of the cap. KSPDA0194EC 4 Si photodiodes S1336 series (7) S1336-8BQ (8) S1336-8BK Photosensitive area 5.8 × 5.8 0.085 Photosensitive surface 13.9 ± 0.2 15 15 1.8 1.8 Photosensitive surface 0.085 Glass 5.0 ± 0.2 Glass Window 10.5 ± 0.1 13.9 ± 0.2 X 5.0 ± 0.2 Photosensitive area 5.8 × 5.8 12.35 ± 0.1 Window 10.5 ± 0.1 X 12.35 ± 0.1 Y Y 0.45 Lead 0.45 Lead 7.5 ± 0.2 7.5 ± 0.2 Index mark ( 1.4) Index mark ( 1.4) Distance from photosensitive area center to cap center -0.315≤X≤+0.485 -0.4≤Y≤+0.4 Connected to case Distance from photosensitive area center to cap center -0.315≤X≤+0.485 -0.4≤Y≤+0.4 KSPDA0200EC Connected to case The glass window may extend a maximum of 0.2 mm above the upper surface of the cap. KSPDA0193EC Precautions against UV light exposure ∙ When UV light irradiation is applied, the product characteristics may degrade. Such examples include degradation of the product’s UV sensitivity and increase in dark current. This phenomenon varies depending on the irradiation level, irradiation intensity, usage time, and ambient environment and also varies depending on the product model. Before employing the product, we recommend that you check the tolerance under the ultraviolet light environment that the product will be used in. ∙ Exposure to UV light may cause the characteristics to degrade due to gas released from the resin bonding the product’s component materials. As such, we recommend that you avoid applying UV light directly on the resin and apply it on only the inside of the photosensitive area by using an aperture or the like. 5 Si photodiodes S1336 series Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Metal, ceramic, plastic package products Technical information ∙ Si photodiode/Application circuit examples Information described in this material is current as of October, 2015. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KSPD1022E08 Oct. 2015 DN 6