s2551 kspd1027e

Si photodiode
S2551
For visible to infrared precision photometry
S2551 is a Si photodiode having a long active area of 1.2 × 29.1 mm, designed for visible to infrared precision photometry.
Features
Applications
Long, narrow active area: 1.2 × 29.1 mm
Analytical instruments
High sensitivity
Optical measurement equipment
Low capacitance
Absolute maximum ratings
Parameter
Reverse voltage
Operating temperature
Storage temperature
Symbol
VR Max.
Topr
Tstg
Value
30
-20 to +60
-20 to +80
Unit
V
°C
°C
Note: Absolute maximum ratings are the values that must not be exceeded at any time. If even one of the absolute maximum ratings
is exceeded even for a moment, the product quality may be impaired. Always be sure to use the product within the absolute
maximum ratings.
Electrical and optical characteristics (Ta=25 °C)
Parameter
Spectral response range
Peak sensitivity wavelength
Photo sensitivity
Short circuit current
Dark current
Temperature coefficient of ID
Rise time
Terminal capacitance
Shunt resistance
Noise equivalent power
Symbol
λ
λp
S
Isc
ID
TCID
tr
Ct
Rsh
NEP
Condition
λ=λp
λ=663 nm
100 lx
VR=10 mV
VR=0 V, RL=1 kΩ
VR=0 V, f=10 kHz
VR=10 mV
VR=0 V, λ=λp
Min.
24
0.01
-
www.hamamatsu.com
Typ.
340 to 1060
920
0.6
0.37
30
1.15
1.4
350
0.03
3.9 × 10-14
Max.
1
-
Unit
nm
nm
A/W
A/W
μA
nA
times/°C
μs
pF
GΩ
W/Hz1/2
1
Si photodiode
S2551
Photo sensitivity temperature characteristic
Spectral response
(Typ. Ta=25 °C)
0.8
(Typ. )
+1.5
Temperature coefficient (%/°C)
Photo sensitivity (A/W)
0.7
0.6
0.5
QE=100%
0.4
0.3
0.2
+1.0
+0.5
0
0.1
0
300
400
500
600
700
800
900
-1.5
190
1000 1100
Wavelength (nm)
400
600
800
Wavelength (nm)
KSPDB0173EB
KSPDB0053EB
Rise time vs. load resistance
Dark current vs. reverse voltage
(Typ. Ta=25 °C, VR=0 V)
1 ms
1 nA
Dark current
Rise time
(Typ. Ta=25 °C)
10 nA
100 µs
10 µs
1 µs
100 ns
10 ns
102
1000
100 pA
10 pA
1 pA
103
104
105
Load resistance (Ω)
100 fA
0.01
0.1
1
10
Reverse voltage (V)
KSPDB0174EA
KSPDB0175EA
2
Si photodiode
S2551
Shunt resistance vs. ambient temperature
(Typ. VR=10 mV)
100 GΩ
10 GΩ
Shunt resistance
1 GΩ
100 MΩ
10 MΩ
1 MΩ
100 kΩ
10 kΩ
1 kΩ
-20
0
20
40
60
80
Ambient temperature (°C)
KSPDB0176EB
Dimensional outline (unit: mm)
40.0 ± 0.7
13
Active area
1.2 × 29.1
0.5
3.2 ± 0.2
1.2
29.1
0
3.0+- 0.3
33.1 ± 0.7
Resin
Photosensitive
surface
0.45
Lead
33.1 ± 0.7
The resin potting may extend a
maximum of 0.1 mm beyond the
upper surface of the package.
KSPDA0116EB
3
Si photodiode
S2551
Information described in this material is current as of October, 2011.
Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact
us for the delivery specification sheet to check the latest information.
Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or
a suffix "(Z)" which means developmental specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product
use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KSPD1027E03 Oct. 2011 DN
4