Si photodiodes S1337 series For UV to IR, precision photometry These Si photodiodes have sensitivity in the UV to near IR range. They are suitable for low-light-level detection in analysis and the like. Features Applications High UV sensitivity: QE 75% (λ=200 nm) Analytical equipment Low capacitance Optical measurement equipment Structure / Absolute maximum ratings Type no. S1337-16BQ* S1337-16BR S1337-33BQ* S1337-33BR S1337-66BQ* S1337-66BR S1337-1010BQ* S1337-1010BR S1337-21* Window material Quartz Resin potting Quartz Resin potting Quartz Resin potting Quartz Resin potting Unsealed Package Photosensitive area size Effective photosensitive area (mm) (mm) (mm2) 2.7 × 15 1.1 × 5.9 5.9 6 × 7.6 2.4 × 2.4 5.7 8.9 × 10.1 5.8 × 5.8 33 15 × 16.5 10 × 10 100 25.5 × 25.5 18 × 18 324 Absolute maximum ratings Operating Storage Reverse temperature temperature voltage Topr Tstg VR max (V) (°C) (°C) 5 -20 to +60 -20 to +80 0 to +60 0 to +80 * Refer to “Precautions against UV light exposure.” Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Type no. Photosensitivity S (A/W) Spectral Peak response sensitivity range wavelength λ λp λp (nm) (nm) S1337-16BQ 190 to 1100 0.5 S1337-16BR 340 to 1100 0.62 S1337-33BQ 190 to 1100 0.5 S1337-33BR 340 to 1100 0.62 S1337-66BQ 190 to 1100 960 0.5 S1337-66BR 340 to 1100 0.62 S1337-1010BQ 190 to 1100 0.5 S1337-1010BR 340 to 1100 0.62 S1337-21 190 to 1100 0.52 200 nm He-Ne laser 633 Min. Typ. nm 0.10 0.12 0.33 0.4 0.10 0.12 0.33 0.4 0.10 0.12 0.33 0.4 0.10 0.12 0.33 0.4 0.10 0.13 0.34 Short circuit Terminal Dark Temp. Rise time current capacitance current coefficient tr Isc Ct ID of VR=0 V 100 lx VR=10 mV VR=0 V ID RL=1 kΩ GaAs Min. Typ. Max. f=10 kHz TCID LED 930 nm (μA) (μA) (pA) (times/°C) (μs) (pF) 0.5 4.0 5.3 50 0.2 65 0.6 4.4 6.2 0.5 4.0 5.0 30 0.2 65 0.6 4.4 6.2 0.5 20 27 1.15 100 1 380 0.6 22 33 0.5 65 78 200 3 1100 0.6 70 95 0.51 200 250 500 8 4000 www.hamamatsu.com Noise Shunt resistance equivalent power Rsh NEP VR=10 mV Min. Typ. (GΩ) (GΩ) (W/Hz1/2) 1.0 × 10-14 0.2 0.6 8.4 × 10-15 8.1 × 10-15 0.3 1 6.5 × 10-15 1.3 × 10-14 0.1 0.4 1.0 × 10-14 1.8 × 10-14 0.05 0.2 1.5 × 10-14 0.02 0.1 2.5 × 10-14 1 Si photodiodes S1337 series Spectral response S1337BQ series, S1337-21 S1337-BR series (Typ. Ta=25 °C) 0.7 (Typ. Ta=25 °C) 0.7 0.6 0.6 Photosensitivity (A/W) Photosensitivity (A/W) S1337-21 0.5 0.4 0.3 S1337-BQ series 0.2 0.4 0.3 0.2 0.1 0.1 0 190 0.5 400 600 800 0 190 1000 400 600 800 1000 Wavelength (nm) Wavelength (nm) KSPDB0306EA KSPDB0102ED Photosensitivity temperature characteristics (Typ. ) +1.5 (Typ. Ta=25 °C) 10 nA S1337-66BQ/BR 1 nA +1.0 S1337-1010BQ/BR S1337-21 Dark current Temperature coefficient (%/°C) Dark current vs. reverse voltage +0.5 100 pA S1337-16BQ/BR 10 pA S1337-33BQ/BR 0 1 pA -0.5 190 400 600 800 100 fA 0.01 1000 0.1 1 10 Reverse voltage (V) Wavelength (nm) KSPDB0053EB KSPDB0104EC 2 Si photodiodes S1337 series Dimensional outlines (unit: mm) Hole (2 ×) 0.8 2.7 ± 0.1 Hole (2 ×) 0.8 S1337-16BR Photosensitive area 1.1 × 5.9 Photosensitive area 1.1 × 5.9 Photosensitive surface 15 ± 0.15 0.5 Lead 15 ± 0.15 13.5 ± 0.13 6.2 6.2 0.5 0.95 12.2 Resin 0.45 13.5 ± 0.13 1.5 ± 0.1 Photosensitive surface 1.5 ± 0.1 Quartz window 2.7 ± 0.1 S1337-16BQ 0.5 Lead Anode terminal mark Anode terminal mark 8.5 ± 0.2 8.5 ± 0.2 The resin potting may extend a maximum of 0.1 mm above the upper surface of the package. KSPDA0106EB KSPDA0105EB S1337-33BQ S1337-33BR Photosensitive 7.6 ± 0.1 area 2.4 × 2.4 6.0 ± 0.1 6.0 ± 0.1 Photosensitive 7.6 ± 0.1 area 2.4 × 2.4 4.5 ± 0.2 10.5 6.6 ± 0.3 5.0 ± 0.3 6.6 ± 0.3 0.75 0.35 2.0 ± 0.1 0.5 Lead 4.5 ± 0.2 Anode terminal mark 5.0 ± 0.3 0.5 Lead Anode terminal mark Resin 10.5 0.1 0.85 0.35 Photosensitive surface 2.0 ± 0.1 Photosensitive surface Quartz window The resin potting may extend a maximum of 0.1 mm above the upper surface of the package. KSPDA0107EB KSPDA0108EB 3 Si photodiodes S1337 series S1337-66BQ Photosensitive area 5.8 × 5.8 10.5 0.5 Lead 0.75 0.3 Resin 10.5 0.1 2.0 ± 0.1 0.85 0.3 Photosensitive surface 2.0 ± 0.1 Photosensitive surface Quartz window 0.5 Lead 9.2 ± 0.3 9.2 ± 0.3 7.4 ± 0.2 7.4 ± 0.2 8.0 ± 0.3 Anode terminal mark 8.0 ± 0.3 Anode terminal mark 10.1 ± 0.1 8.9 ± 0.1 8.9 ± 0.1 Photosensitive 10.1 ± 0.1 area 5.8 × 5.8 S1337-66BR The resin potting may extend a maximum of 0.1 mm above the upper surface of the package. KSPDA0110EB KSPDA0109EB S1337-1010BQ Photosensitive area 10 × 10 16.5 ± 0.2 16.5 ± 0.2 15.0 ± 0.15 15.0 ± 0.15 Photosensitive area 10 × 10 S1337-1010BR 2.15 ± 0.1 0.5 Lead 15.1 ± 0.3 15.1 ± 0.3 12.5 ± 0.2 12.5 ± 0.2 Anode terminal mark 13.7 ± 0.3 13.7 ± 0.3 Anode terminal mark 10.5 10.5 0.9 Resin 0.3 0.1 1.0 0.3 0.5 Lead 2.15 ± 0.1 Photosensitive surface Quartz window Photosensitive surface The resin potting may extend a maximum of 0.1 mm above the upper surface of the package. KSPDA0111EB KSPDA0112EB 4 Si photodiodes S1337 series S1337-21 +0 25.5 - 0.6 +0 25.5 - 0.6 3.4 White ceramic ȁ0.45 Lead 10 1.2 White ceramic Photosensitive surface 2.54 ± 0.2 Photosensitive area 18 × 18 5.0 ± 0.2 1.75 KSPDA0190EA Precautions against UV light exposure ∙ When UV light irradiation is applied, the product characteristics may degrade. Such examples include degradation of the product’s UV sensitivity and increase in dark current. This phenomenon varies depending on the irradiation level, irradiation intensity, usage time, and ambient environment and also varies depending on the product model. Before employing the product, we recommend that you check the tolerance under the ultraviolet light environment that the product will be used in. ∙ Exposure to UV light may cause the characteristics to degrade due to gas released from the resin bonding the product’s component materials. As such, we recommend that you avoid applying UV light directly on the resin and apply it on only the inside of the photosensitive area by using an aperture or the like. 5 Si photodiodes S1337 series Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Metal, ceramic, plastic package products Technical information ∙ Si photodiode/Application circuit examples Information described in this material is current as of October, 2015. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KSPD1032E07 Oct. 2015 DN 6