DICE/DWF SPECIFICATION RHK3845MKDICE Radiation Hardened High Voltage Synchronous Step-Down Regulator Kit with Power NMOS FETs Description DIE CROSS REFERENCE The RHK3845MKDICE is a radiation hardened dice kit that includes one RH3845MK high voltage synchronous stepdown controller and two RH411MK power NMOS FETs. In its final hybrid configuration, the RHK3845MK is a wide input voltage range, step-down, synchronous switching regulator. Input voltage range is 7.5V to 60V. With an external VCC supply, minimum input can be reduced to 4.0V. The final hybrid supports output voltages up to 36V, and a switching frequency range of 100kHz to 500kHz. The bulk input and output capacitors, inductor, diodes and other passive elements are needed to finish the design. Note that Burst Mode® operation which is available in the LT3845 is not available in the RH3845 version. LTC® Finished Part Number Order Part Number RHK3845MK RHK3845MK RHK3845MK DICE RHK3845MK DWF* Please refer to LTC standard product data sheet for other applicable product information. Each kit contains one RH3845MK die and two RH411MK dice. *DWF = DICE in wafer form. L, LT, LTC, LTM, Linear Technology, the Linear logo and Burst Mode are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners. Typical Application VIN RH411MK BOOST VIN TG G S RH3845MK SHDN SW CSS VCC MODE BG D RH411MK G VOUT D S VFB VC SYNC fSET PGND SENSE+ SENSE– GND RH3845MK TA01 1 DICE/DWF SPECIFICATION RH3845MKDICE High Voltage Synchronous Step-Down Controller Description absolute Maximum Ratings The RH3845MK is a high voltage, synchronous, current mode controller for medium to high power, high efficiency supplies. It offers a wide 7.5V to 60V input range. With an external VCC supply, minimum input is 4V. An onboard regulator simplifies the biasing requirements by providing IC power directly from VIN. (Note 1) Additional features include an adjustable fixed operating frequency synchronizable to an external clock for noise sensitive applications, gate drivers capable of driving large N-channel MOSFETs, a precision undervoltage lockout, low shutdown current, short-circuit protection, and a programmable soft-start. Note that Burst Mode operation which is available in the LT3845 is not available in the RH3845 version. VIN.............................................................................65V BOOST.......................................................................80V BOOST to SW............................................................24V VCC, MODE.................................................................24V SENSE+, SENSE–........................................................40V SENSE+ TO SENSE–...................................................±1V SYNC, VFB, AND CSS....................................................5V SHDN Pin Current.....................................................1mA Operating Junction Temperature Range....–55°C to 125°C Storage Temperature Range.................... –65°C to 150°C Dice Pinout 1 See page 1 for ordering information 20 19 18 2 17 16 3 15 4 5 14 6 13 7 8 9 10 11 113mils × 124mils, Backside metal: Alloyed Gold Layer Backside potential: GND 2 12 PAD FUNCTION 1. VIN 2. SHDN 3. CSS 4. MODE 5. VFB 6. VC 7. SYNC 8. FSET 9. GND 10. GND 11. GND 12. SENSEN 13. SENSEP 14. PGND 15. BG 16. VCC 17. SW 18. TG 19. BOOST 20. GND DICE/DWF SPECIFICATION RH3845MKDICE Table 1: Dice/DWF Electrical Test Limits – + Specifications are at TA = 25°C, VIN = 20V, VCC = BOOST = 10V, SHDN = 2V, RSET = 49.9k, SENSE = SENSE = 10V, SGND = PGND = SW = 0V. PARAMETER CONDITIONS MIN VIN Minimum Start Voltage (Note 2) MAX 7.5 VIN UVLO Threshold (Falling) 3.6 UNITS V 4.0 V VIN Supply Current VCC > 9V 200 μA VIN Shutdown Current VSHDN = 0.3V 100 μA 2 mA 4.5 mA BOOST Supply Current (Note 3) VCC Supply Current SHDN Enable Threshold (Rising) 1.30 1.40 V Reference Voltage 1.214 1.250 V 50 nA VFB Input Bias Current VFB Error Amp Transconductance 350 µS Error Amp Sink/Source Current 35 µA 2 µA Peak Current Limit Sense Voltage MODE Pin Current (Note 4) 90 120 mV Soft-Start Charge Current 8 14 µA Sense Pins Common-Mode Range 36 V Sense Pins Input Current VSENSE(CM) > 4V 400 µA Reverse Protect Sense Voltage VMODE = 7.5V 120 mV Reverse Current Sense Voltage Offset VMODE = VFB 20 mV Switching Frequency RT = 49.9k 270 360 kHz 100 500 kHz Programmable Frequency Range 0 3 DICE/DWF SPECIFICATION RH3845MKDICE Table 2: Electrical– Characteristics + Specifications are at TA = 25°C, VIN = 20V, VCC = BOOST = 10V, SHDN = 2V, RSET = 49.9k, SENSE = SENSE = 10V, SGND = PGND = SW = 0V. (Pre-Irradiation) PARAMETER CONDITIONS SUBGROUP VIN Minimum Start Voltage (Note 2) 1 VIN UVLO Threshold (Falling) 1 MIN TA = 25°C TYP MAX 7.5 2, 3 3.6 3.8 4.0 2, 3 SUBGROUP –55°C ≤ TA ≥ 125°C MIN TYP MAX 3.6 3.8 UNITS 7.5 V 4.0 V VIN Supply Current VCC > 9V 1 130 200 2, 3 800 μA VIN Shutdown Current VSHDN = 0.3V 1 65 100 2, 3 200 μA BOOST Supply Current (Note 3) 1 1.4 2 2, 3 3.5 mA VCC Supply Current 1 3.8 4.5 2, 3 VCC Current Limit 1 –40 –150 1.30 1.35 SHDN Enable Threshold (Rising) 1 SHDN Hysteresis 1 Reference Voltage 1 VFB Input Bias Current 1 VFB Error Amp Transconductance Error Amp Sink/Source Current 1.4 140 5.5 mA 2, 3 –40 mA 2, 3 1.30 1.5 V 2, 3 100 200 mV 1.214 1.250 V 540 µS 1.214 1.232 1.250 2, 3 20 50 2, 3 1 350 450 2, 3 340 1 35 50 2, 3 20 Peak Current Limit Sense Voltage 1 90 105 120 2, 3 85 125 mV Soft-Start Charge Current 1 8 12 14 2, 3 8 16 µA 1 0 0 Sense Pins Common-Mode Range 20 nA µA 36 2, 3 36 V Sense Pins Input Current VSENSE(CM) > 4V 1 320 400 2, 3 500 µA Reverse Protect Sense Voltage VMODE = 7.5V 1 108 120 2, 3 140 mV Reverse Current Sense Voltage Offset VMODE = VFB 15 20 2, 3 25 mV 300 360 2, 3 240 390 kHz 100 500 2, 3 100 500 kHz 100 600 2, 3 100 600 kHz 270 Programmable Frequency Range 1 External Sync Frequency Range 1 Non-Overlap Time TG to BG 1 250 2, 3 ns Non-Overlap Time BG to TG 1 250 2, 3 ns TG Minimum On-Time 1 400 2, 3 ns TG Minimum Off-Time 1 300 2, 3 ns TG, BG Drive On Voltage RT = 49.9k 1 1 Switching Frequency VCC = 10V TG, BG Drive Off Voltage 1 8 8.75 1 2, 3 0.1 2, 3 8 V 0.1 V TG, BG Drive Rise Time CTG = CBG = 3300pF 1 45 2, 3 ns TG, BG Drive Fall Time CTG = CBG = 3300pF 1 45 2, 3 ns 4 DICE/DWF SPECIFICATION RH3845MKDICE Table 3: Electrical Characteristics – + Specifications are at TA = 25°C, VIN = 20V, VCC = BOOST = 10V, SHDN = 2V, RSET = 49.9k, SENSE = SENSE = 10V, SGND = PGND = SW = 0V. (Post-Irradiation) PARAMETER VIN Minimum Start Voltage (Note 2) VIN UVLO Threshold (Falling) VIN Supply Current VIN Shutdown Current BOOST Supply Current (Note 3) VCC Supply Current VCC Current Limit SHDN Enable Threshold (Rising) SHDN Hysteresis Reference Voltage VFB Input Bias Current VFB Error Amp Transconductance Error Amp Sink/Source Current Peak Current Limit Sense Voltage Soft-Start Charge Current Sense Pins Common-Mode Range Sense Pins Input Current Reverse Protect Sense Voltage Reverse Current Sense Voltage Offset Switching Frequency Programmable Frequency Range Non-Overlap Time TG to BG Non-Overlap Time BG to TG TG Minimum On-Time TG Minimum Off-Time TG, BG Drive On Voltage TG, BG Drive Off Voltage TG, BG Drive Rise Time TG, BG Drive Fall Time CONDITIONS 10KRADS (Si) 20KRADS (Si) 50KRADS (Si) 100KRADS (Si) 200KRADS (Si) MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX 7.5 4 200 100 2 4.5 VCC > 9V VSHDN = 0.3V –40 1.30 1.5 100 180 1.214 1.250 50 350 35 90 120 8 16 36 400 VSENSE(CM) > 4V 120 VMODE = 7.5V 20 VMODE = VFB 270 370 RT = 49.9k 100 500 350 350 500 350 8 VCC = 10V 0.1 60 CTG = CBG = 3300pF 60 CTG = CBG = 3300pF Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability. Note 2: VIN voltages below the start-up threshold (7.5V) are only supported when the VCC is externally driven above 6.5V. 7.5 4 200 100 2 4.5 7.5 4 200 100 2 4.5 –40 –40 1.30 1.5 1.30 1.5 100 180 100 180 1.210 1.246 1.208 1.244 100 120 330 300 35 35 85 120 85 120 8 16 6 16 36 36 400 400 120 120 20 20 270 370 270 370 100 500 100 500 350 350 350 350 500 500 350 350 8 8 0.1 0.1 60 60 60 60 7.5 4 200 100 2 4.5 –40 1.30 100 1.204 280 35 80 5 270 100 1.5 180 1.240 250 120 16 36 400 120 20 370 500 350 350 500 360 8 7.5 4 200 100 2 4.5 –40 1.30 80 1.187 250 30 75 4 270 100 1.5 180 1.223 350 120 16 36 400 120 20 370 500 350 350 500 360 8 0.1 60 60 0.1 60 60 UNITS V V μA μA mA mA mA V mV V nA µS µA mV µA V µA mV mV kHz kHz ns ns ns ns V V ns ns Note 3: Supply current specification does not include switch drive currents. Actual supply currents will be higher. Note 4: Connect the MODE pin to VFB for pulse-skipping mode or VCC for forced continuous mode. Burst Mode operation is not available in the RH3845 version of this part. Table 4: Electrical Test Requirements MIL-STD-883 TEST REQUIREMENTS SUBGROUP Final Electrical Test Requirements (Method 5004) 1*, 2, 3 Group A Test Requirements (Method 5005) 1, 2, 3 Group B and D for Class S, End Point Electrical Parameters (Method 5005) 1, 2, 3 *PDA applies to subgroup 1. See PDA Test Notes. PDA Test Notes The PDA is specified as 5% based on failures from Group A, Subgroup 1, tests after cooldown as the final electrical test in accordance with method 5004 of MIL-STD-883. The verified failures of Group A, Subgroup 1, after burn-in divided by the total number of devices submitted for burn-in in that lot shall be used to determine the percent for the lot. Linear Technology Corporation reserves the right to test to tighter limits than those given. 5 DICE/DWF SPECIFICATION RH3845MKDICE Total Dose Bias Circuit — Run Mode R5 1k R1 4.99k BOOST VIN 3V R2 8.82k 0.1µF R3 1k SHDN TG CSS SW VCC MODE RH3845MK VFB BG + – 5V fSET 30V R9 750Ω R7 200k SENSE+ GND 0.1µF 20V R10 750Ω 10V R11 1.24k PGND VC SYNC R4 49.9k R8 750Ω R6 200k SENSE– + – 40V RH3845MK RUN MODE Total Dose Bias Circuit — Shutdown Mode R4 1k VIN R1 2k 2.5V R2 2.49k BOOST SHDN TG CSS SW MODE VCC RH3845MK BG VFB 0.1µF VC + – R6 200k SENSE+ GND R7 10k 30V R8 10k PGND SYNC fSET R5 200k SENSE– 20V R9 10k 10V R10 10k R3 49.9k 5V 0.1µF + – 40V RH3845MK SHDN MODE Burn-in Circuit — run mode 1k VIN 100Ω SHDN 4.87k CSS SYNC 3.3V 10µF 10V 1k BOOST TG SW MODE RH3845MK VCC VFB VC + – GND BG PGND fSET SENSE+ GND SENSE– GND GND 1k 1W 1k 200k 200k 499Ω 10V 1W 10V 1W 10V 1W 10V 1W 10V 1W 10V 1W + – 70V 1µF 150V RH3845MK BURN IN-RUN 6 DICE/DWF SPECIFICATION RH3845MKDICE Typical Performance characteristics Feedback Voltage Reference vs TID Operating Switching Frequency vs TID 1.4 350 3.5 1.3 325 3.0 2.5 2.0 1.5 1.0 1.2 1.1 1.0 0.9 0.8 0.5 0 SWITCHING FREQUENCY (kHz) 4.0 REFERENCE VOLTAGE (V) VCC SUPPLY CURRENT (mA) VCC Supply Current vs TID 0 100 50 150 TOTAL DOSE (kRADS) 200 0.7 0 50 100 200 150 TOTAL DOSE (kRADS) RH3845MK G01 Rad Hard die require special handling as compared to standard IC chips. Rad Hard die are susceptible to surface damage because there is no silicon nitride passivation as on standard die. Silicon nitride protects the die surface from scratches by its hard and dense properties. The passivation on Rad Hard die is silicon dioxide that is much “softer” than silicon nitride. LTC recommends that die handling be performed with extreme care so as to protect the die surface from scratches. If the need arises to move the die around from the chip tray, use a Teflon-tipped vacuum wand. RH3845MK G02 300 275 250 225 200 0 50 100 150 TOTAL DOSE (kRADS) 200 RH3845MK G03 This wand can be made by pushing a small diameter Teflon tubing onto the tip of a steel-tipped wand. The inside diameter of the Teflon tip should match the die size for efficient pickup. The tip of the Teflon should be cut square and flat to ensure good vacuum to die surface. Ensure the Teflon tip remains clean from debris by inspecting under stereoscope. During die attach, care must be exercised to ensure no tweezers touch the top of the die. Wafer level testing is performed per the indicated specifications for dice. Considerable differences in performance can often be observed for dice versus packaged units due to the influences of packaging and assembly on certain devices and/or parameters. Please consult factory for more information on dice performance and lot qualifications via lot sampling test procedures. Dice data sheet subject to change. Please consult factory for current revision in production. 7 DICE/DWF SPECIFICATION DICE/DWF SPECIFICATION RH411MKDICE 80V, 28mΩ Radiation Hardened Power NMOS FET ABSOLUTE MAXIMUM RATINGS DESCRIPTION The RH411MK is a high performance power N-MOSFET for use only in combination with an LTC synchronous current mode controller. This device has been characterized for Total Ionizing Dose (TID) up to 200KRad(Si). The low 28mΩ RDS(ON), low 23nC gate charge and 80V FET enhance switching regulator efficiency. The integrated source-drain high current Schottky diode fulfills the need for a “Catch” diode across the bottom switch of a Buck regulator and reduces power dissipation during the regulator switch non-overlap time. (Note 1) VGS...........................................................................±15V Operating Junction Temperature............................ 150°C The RH411MKDICE are available for ordering only as part of the RHK3845MKDICE (kit) under specific terms and conditions. Contact LTC sales or marketing for additional details. 1 PAD FUNCTION 3 2 157mils × 102mils2, Backside metal: Alloyed Gold Layer Backside potential: NMOS Drain 8 1. 2. 3. Substrate. Gate Gate Source Drain DICE/DWF SPECIFICATION RH411MKDICE TABLE 1 Dice/DWF Electrical Test Limits TA = 25°C (Notes 2, 3, 4) PARAMETER TEST CONDITION MIN Drain-to-Source Breakdown Voltage VGS = 0V; ID = 3mA 100 Static Drain-to-Source On State Resistance VGS = 8V, ID = 0.2A Gate Threshold Voltage VDS = VGS, ID = 9.8mA Zero Gate Voltage Drain Current VDS = 60V, VGS = 0V Gate-to-Source Leakage VGS = ±15V, VDS = 0V MAX UNITS V 45 3.95 mΩ 4.60 V 1 µA 20 nA –20 Total Gate Charge VGS = 8V, VDS = 30V, ID = 200mA 30 nC Schottky Diode Forward Voltage VGS = 0V, ID = –0.18A 0.6 V TABLE 2 Electrical Characteristics (Pre-Irradiation) (Notes 2, 4,5) PARAMETER TEST CONDITION Drain-to-Source Breakdown Voltage VGS = 0V, ID =3mA MIN TA = 25°C MAX SUB- –55°C < TA < 150°C SUBGROUP MIN MAX GROUP 100 1 Static Drain-to-Source On State Resistance VGS = 8V, ID = 5A Gate Threshold Voltage VDS = VGS, ID = 9.8mA Zero Gate Voltage Drain Current VDS = 60V, VGS = 0V 3.95 Gate-to-Source Leakage VGS = ±15V, VDS = 0V Total Gate Charge VGS = 8V, VDS = 30V, ID = 200mA Schottky Diode Forward Voltage VGS = 0V, ID = –0.2A VGS = 0V, ID = –5A 45 1 4.65 1 1 1 20 1 –20 85 2.25 –1000 UNITS 2, 3 V 95 2, 3 mΩ 5.8 2, 3 V 200 2, 3 µA 1000 2, 3 nA 30 1 50 2, 3 nC 0.6 0.75 1 1 0.75 0.85 2, 3 2, 3 V V 200KRad(Si) MIN MAX UNITS TABLE 3 Electrical Characteristics (Post-Irradiation, TA = 25°C) (Notes 2, 4,5) PARAMETER TEST CONDITION Drain-to-Source Breakdown Voltage VGS = 0V; ID = 3mA Static Drain-to-Source On State Resistance VGS = 8V; ID = 5A Gate Threshold Voltage VDS = VGS; ID = 9.8mA Zero Gate Voltage Drain Current VDS = 60V; VGS = 0V Gate-to-Source Leakage VGS = ±15V; VDS = 0V Total Gate Charge VGS = 8V, VDS = 30V, ID = 200mA Schottky Diode Forward Voltage VGS = 0V, ID = –0.2A VGS = 0V, ID = –5A 50KRad(Si) MIN MAX 80 100KRad(Si) MIN MAX 80 50 3.0 4.65 100 80 50 2.25 10 –100 150KRad(Si) MIN MAX 4.65 1.75 10 –100 100 80 50 4.65 1.25 10 –100 100 V 50 –100 mΩ 4.65 V 10 µA 100 nA 40 40 40 40 nC 0.65 0.8 0.65 0.8 0.65 0.8 0.65 0.8 V V Note 1: Stress beyond those listed under Absolute Maximum Ratings may cause damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 4: Dice that are not qualified by Linear Technology with a can sample are guaranteed to meet specifications in Table 1 only. Dice qualified by Linear Technology with a can sample meet specifications in all tables. Note 2: The RH411MK is tested under pulse current conditions such that TJ ≈ TA. Note 5: Can sample are tested in a 4-Lead TO-3 package. Note 3: Dice are probe tested at 25°C to the limits shown in Table 1. Dice are tested under low current conditions which assure full high current specifications when assembled in packaging systems approved by Linear Technology. 9 DICE/DWF SPECIFICATION RH411MKDICE RH411MK Rad Hard die require special handling as compared to standard IC chips. Rad Hard die are susceptible to surface damage because there is no silicon nitride passivation as on standard die. Silicon nitride protects the die surface from scratches by its hard and dense properties. The passivation on Rad Hard die is silicon dioxide that is much “softer” than silicon nitride. LTC recommends that die handling be performed with extreme care so as to protect the die surface from scratches. If the need arises to move the die around from the chip tray, use a Teflon-tipped vacuum wand. This wand can be made by pushing a small diameter Teflon tubing onto the tip of a steel-tipped wand. The inside diameter of the Teflon tip should match the die size for efficient pickup. The tip of the Teflon should be cut square and flat to ensure good vacuum to die surface. Ensure the Teflon tip remains clean from debris by inspecting under stereoscope. During die attach, care must be exercised to ensure no tweezers touch the top of the die. Wafer level testing is performed per the indicated specifications for dice. Considerable differences in performance can often be observed for dice versus packaged units due to the influences of packaging and assembly on certain devices and/or parameters. Please consult factory for more information on dice performance and lot qualifications via lot sampling test procedures. Dice data sheet is subject to change. Please consult factory for current revision in production. Table 5. Electrical Test Requirements MIL-STD-883 TEST REQUIREMENTS SUBGROUP Final Electrical Test Requirements (Method 5004) 1*, 2, 3 Group A Test Requirements (Method 5005) 1, 2, 3 Group B and D for Class S, End Point Electrical Parameters (Method 5005) 1, 2, 3 *PDA applies to subgroup 1. See PDA Test Notes. 10 PDA Test Notes The PDA is specified as 5% based on failures from Group A, Subgroup 1, tests after cooldown as the final electrical test in accordance with method 5004 of MIL-STD-883. The verified failures of Group A, Subgroup 1, after burn-in divided by the total number of devices submitted for burn-in in that lot shall be used to determine the percent for the lot. Linear Technology Corporation reserves the right to test to tighter limits than those given. DICE/DWF SPECIFICATION RH411MK RH411MKDICE Total Dose Bias Circuit VA 4.99k VA = 80V TO 82V VD = GROUND TA = 25°C 0.01µF 200V 4.99k 1 GATE DRAIN 5 84.5k 0.01µF 200V 10k 2 SOURCE 3 SOURCE 4 SOURCE 10M 1 GATE DRAIN 5 15k 2 SOURCE 3 SOURCE 4 SOURCE VD Burn-In Circuit VA 4.99k 0.01µF 200V 4.99k 1 GATE DRAIN 5 84.5k 0.01µF 200V 10k 2 SOURCE 3 SOURCE 4 SOURCE 1 GATE DRAIN 5 15k 2 SOURCE 3 SOURCE 4 SOURCE VD VA = 80V TO 82V VD = GROUND TA = 125°C TJMAX = 134°C/W DUT CURRENT = 40µA 10M TO-3 4-LEAD 1. 2. 3. 4. 5. GATE SOURCE SOURCE SOURCE DRAIN 1 4 2 3 5 BOTTOM VIEW 11 DICE/DWF SPECIFICATION RH411MKDICE Typical Performance Characteristics preirradiation (4-Lead TO-3 Package) Drain-Source On-Resistance VGS = 8V IDS = 10A 30 20 140 135 130 10 VGS = VD IDS = 9.8mA 4.5 145 40 0 –100 5.0 VGS = 0V IDS = 3mA 150 BVDSS (V) RDS(ON) (mΩ) 50 Gate Threshold Voltage Drain-Source Breakdown 155 VGS(TH) (V) 60 4.0 3.5 125 –50 0 50 100 TEMPERATURE (°C) 150 200 120 –100 –50 100 50 0 TEMPERATURE (°C) 150 G01 –50 0 50 100 TEMPERATURE (°C) G02 Gate Charge 10 3.0 –100 200 VDS = 30V IDS = 100mA VGS = 0V ISD (A) VGS (V) 8 6 150°C 25°C –55°C 1 4 2 0 0 5 10 15 20 CHARGE (nC) 25 30 G04 12 0.1 0.2 0.3 200 G03 Schottky Diode Forward Drop 10 150 0.4 0.5 0.6 VSD (V) 0.7 0.8 0.9 G05 DICE/DWF SPECIFICATION RH411MKDICE Typical Performance Characteristics Post-irradiation (4-Lead TO-3 Package) Gate Threshold Voltage vs TID 4.5 Drain-Source Breakdown vs TID 140 VGS(TH) MEASUREMENT: VG = VD IDS = 9.8mA 4.0 135 BVDSS(TH) (V) VGS(TH) (V) 3.5 3.0 2.5 130 125 120 2.0 1.5 50 0 100 TID (kRad(Si)) 150 115 200 150 200 G07 BIASED VDS = 80V, VGS = 0V BIASED VDS = 0V, VGS = 12V POST 3 WEEK 25°C BIASED ANNEAL, VDS = 80V, VGS = 0V POST 3 WEEK 25°C BIASED ANNEAL, VDS = 0V, VGS = 12V G06 IDSS vs TID, Gate Biased IDSS vs TID, Drain Biased 100000 10000 10000 1000 1000 IDSS (µA) 100000 IDSS (µA) 100 50 0 TID (kRad(Si)) BIASED VDS = 80V, VGS = 0V BIASED VDS = 0V, VGS = 12V POST 3 WEEK 25°C BIASED ANNEAL, VDS = 80V, VGS = 0V POST 3 WEEK 25°C BIASED ANNEAL, VDS = 0V, VGS = 12V 100 10 1 BVDSS MEASUREMENT: VGS = 0V IDS = 3mA 100 10 0 1 2 3 4 5 6 VGS (V) IDSS MEASUREMENT: VDS = 0.1V G08 PRE IRRADATION POST 100 kRad(Si), VDS = 0V, VGS = 12V POST 200 kRad (Si), VDS = 0V, VGS = 12V 1 0 1 2 3 VGS (V) IDSS MEASUREMENT: VDS = 0.1V 4 5 6 G09 PRE IRRADATION POST 100 kRad(Si), VDS = 80V, VGS = 0V POST 200 kRad (Si), VDS = 80V, VGS = 0V Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 13 DICE/DWF SPECIFICATION RH411MKDICE Revision History REV DATE DESCRIPTION A 11/15 Removed VCC Current Limit. Corrected Reverse Current Sense Voltage Offset from 10mV to 20mV. Clarified Description text. PAGE NUMBER 3, 5, 8 Wafer level testing is performed per the indicated specifications for dice. Considerable differences in performance can often be observed for dice versus packaged units due to the influences of packaging and assembly on certain devices and/or parameters. Please consult factory for more information on dice performance and lot qualifications via lot sampling test procedures. Dice data sheet subject to change. Please consult factory for current revision in production. 14 I.D.No. 66-13-3845 Linear Technology Corporation LT 1115 REV A • PRINTED IN USA 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 ● FAX: (408) 434-0507 ● www.linear.com LINEAR TECHNOLOGY CORPORATION 2015