MH1RT QualPack Qualification Package MH1RT Sea of Gates Radiation Tolerant 0.35 µm CMOS MH1RT Sea of Gates 0.35 µm CMOS for Space Environment QualPack Rev.2 – Jan. 2002 1 MH1RT QualPack 1. Table of Contents 1. Table of Contents ................................................................................................................................................ 2 2. General Information ........................................................................................................................................... 3 3. Technology Information .................................................................................................................................... 4 4. 3.1 Wafer Process Technology ........................................................................................................................ 4 3.2 Product Design ........................................................................................................................................... 5 3.3 Cross Section............................................................................................................................................... 6 Qualification........................................................................................................................................................ 7 4.1 Qualification methodology ........................................................................................................................ 7 4.2 Qualification test methods ......................................................................................................................... 8 4.3 Wafer Process Qualification...................................................................................................................... 9 4.3.1 Wafer Level Reliability....................................................................................................................... 9 4.3.2 Hot carrier qualification ....................................................................................................................... 9 4.3.3 Electromigration................................................................................................................................. 10 4.3.4 Product Reliability Results................................................................................................................. 12 4.4 Product Qualification............................................................................................................................... 13 4.4.1 Device reliability................................................................................................................................ 13 4.4.2 Packaging Reliability ......................................................................................................................... 14 4.5 Qualification status: ................................................................................................................................. 14 4.6 Irradiation................................................................................................................................................. 15 4.6.1 Conditions and Chronology ............................................................................................................... 15 4.6.2 Results................................................................................................................................................ 16 4.6.3 Irradiation summary ........................................................................................................................... 16 4.6.4 Irradiation test records........................................................................................................................ 17 5. Environmental Information.............................................................................................................................. 20 6. Other Data ......................................................................................................................................................... 21 2 6.1 ISO9001 and QS900 Certificates ............................................................................................................ 21 6.2 Data Book Reference................................................................................................................................ 22 Rev. 2 – Jan 2002 MH1RT QualPack 2. General Information Product Name: Function: MH1RT ASIC Sea of Gates 1.6 million gates, 596 pins 200 KRAD Total Dose capability Wafer Process: CMOS 0.35µm Rad Tolerant, 4 metal levels Available Package Types PQFP, PowerQuad, L/TQFP,PLCC, PBGA, Super PBGA CPGA,CQFP, MQFPF, CLGA Other Forms: Die, Wafer Locations: Process Development Product Development Wafer Plant QC Responsibility Probe Test Assembly Final Test Lot Release Shipment Control Quality Assurance Reliability Testing Failure Analysis Atmel Rousset, France Atmel Nantes, France Atmel Nantes, France Atmel Rousset, France Atmel Nantes, France Atmel Nantes, France Atmel Grenoble, France (except plastic) Atmel Nantes, France Atmel Nantes, France Atmel Nantes, France Atmel Nantes, France Atmel Nantes, France Atmel Nantes, France Quality Management Atmel Nantes, France Signed: Pascal LECUYER Rev.2 – Jan. 2002 3 MH1RT QualPack 3. Technology Information 3.1 Wafer Process Technology Process Type (Name): CMOS 0.35µm Rad Tolerant Base Material: Silicon Epi Substrate Wafer Thickness (without back grinding) 725µm Wafer Diameter 200mm Number Of Masks 15 Gate Oxide Material Thickness Silicon Dioxide 70A (optical for 3.3V) Polysilicon Number of Layers Thickness 1 3200A Metal Number of Layers Material: Layer 1/3 Thickness Upper layer Thickness up to 4 Ti TiN AlCu 400A + 800A + 5000A + 100A Ti + 1000A TiN 400A + 800A + 8000A + 250A TiN Passivation Material Thickness SiO2/Si3N4 11000A / 10000A 4 Rev. 2 – Jan 2002 MH1RT QualPack 3.2 Product Design Pad size opening Logic Effective Channel Length 80µm * 100µm 0.35µm Gate Poly Width Gate Poly Spacing 0.35µm 0.49µm Metal 1 Metal 1 Metal 2 Metal 2 Metal 3 Metal 3 Metal 4 Metal 4 Width Spacing Width Spacing Width Spacing Width Spacing 0.42µm 0.49µm 0.56µm 0.49µm 0.56µm 0.49µm 0.56µm 0.49µm Contact Size Contact Spacing 0.35µm 0.49µm Via 1 Size Via 2 Size 0.42µm 0.42µm Test Vehicles: Die Size: Pad Size Code: Mask: Number of metal levels: 5280*8130 (42.9mm²) 80µm * 100µm EV29 A5500 3 Die Size: Pad Size Code: Mask: Number of metal levels: 13097*13097 (169.78mm²) 80µm * 100µm DRAF (MH242S) A5544 4 Die Size: Pad Size Code: Mask: Number of metal levels: 6601*6601 (30.9mm²) 90µm * 90µm 65809E A5552 3 Rev.2 – Jan. 2002 5 MH1RT QualPack 3.3 Cross Section 6 Rev. 2 – Jan 2002 MH1RT QualPack 4. Qualification 4.1 Qualification methodology All product qualifications are split into three distinct steps as shown below. Before a product is released for use, successful qualification testing are required at wafer, device and package level. Wafer Level Reliability consists in testing individually basic process modules regarding their well known potential limitations (Electromigration, Hot Carriers Injection, Oxide Breakdown, NVM Data Retention). Each test is performed using wafer process specific structures. Device reliability is covering either dice design and processing aspects. The tests are performed on device under qualification, but generic data may also be considered for reliability calculation. For each package type proposed in the Datasheet, it is verified that qualification data are available. If not qualification tests are carried out for the new package types. In addition, one package type is selected to verify packaging reliability of the device under qualification. Product Qualification Wafer Level Device Packaging (Design / Process) Reliability Reliability Reliability Rev.2 – Jan. 2002 7 MH1RT QualPack 4.2 Qualification test methods General Requirements for Hermetic CMOS ICs 8 Standard Test Description Acceptance MIL-STD 883 QCI Group C Electrical Life Test (Early Failure Rate) 2000 hours 140°C 0/45 352h class B 0/45 700h class S MIL-STD 883 Method 2016 QCI Group D1 Physical Dimensions 0/15 MIL-STD 883 Method 2004 condition B2 QCI GroupD2 Lead Integrity 0/3 MIL-STD 883 Method 1011 Method 1010 cond. C Method 1004 QCI Group D3 Thermal shocks - 15 cycles Temperature cycling - 100 cycles Moisture Resistance - 240 hours 0/15 MIL-STD 883 Method 2002 Method 2007 Method 2001 QCI Group D4 Mechanical shocks Vibration at variable frequency Constant acceleration 0/15 MIL-STD 883 Method 1009 QCI Group D5 Salt atmosphere 0/15 MIL-STD 883 Method 1018 QCI Group D6 Internal vapor content 0/3 MIL-STD 883 Method 2025 QCI Group D7 Lead finish adhesion 0/15 MIL-STD 883 Method 2024 QCI Group D8 Lid torque 0/5 Rev. 2 – Jan 2002 MH1RT QualPack 4.3 Wafer Process Qualification 4.3.1 Wafer Level Reliability This chapter contains all the information relative to the reliability of the 0.35um AT56K technology, from which the MH1RT library has been derived. Results presented in the following sections concern the reliability of the basic process steps which build up the technology. 4.3.2 Hot carrier qualification Gate Oxides of 70 ang and 110 ang were subjected to stress to determine lifetimes due to Hot Carrier Injection. The 70 ang oxide was subjected to a Vd = 3.6v for 10% IDSAT shift for a 10/.35um NMOS transistor. The DC results were .27 years which is equivalent to > 10 years for AC. (Source COS). The 110 ang oxide was subjected to Vgs=3v and Vds=6v with a 0.6um gate length. Again the failure criterion was 10% IDSAT shift. The DC results were 1.1 years, which is equivalent to much greater than 10 years for AC (Source ES2). Note: Spec = 0.2 years DC. Rev.2 – Jan. 2002 9 MH1RT QualPack 4.3.3 Electromigration Electromigration testing was performed on six structures, which included Contact, Metal 1, Via 1, Metal 2, Via 2, and Metal 3. The conditions of the tests were 2E06 current density at an ambient temperature of 200C. The testing was terminated at 1017 hours. With the exception of Metal 2, there were no failures. In order to estimate a minimum life expectancy for the zero failure tests, time to first failure is calculated as if occurring at 1017 hours of stress time. The following table summarizes the results of this testing: Considered TF Contact Metal 1 Via 1 Metal 2 Via 2 Metal 3 Tf 3.804% = 1017 hrs Tf 3.608% = 1017 hrs Tf 3.608% = 1017 hrs MTF = 513.734 hrs Tf 3.431% = 1017 hrs Tf 3.804% = 1017 hrs Stress Tempe rature 195.49 Current Density J Ea / n 2E06 0.66 / 2 203.68 2E06 0.66 / 2 200.11 2E06 0.66 / 2 209.67 2E06 0.66 / 2 200.97 2E06 0.66 / 2 212.77 Tf 0.1% (hrs) 272.7 2 279.3 6 279.3 6 32.20 Normalized Use Tf 0.1% 654 Years 670 Years 670 Years 77 Years 285.8 685 Years 5 2E06 0.66 / 2 272.7 654 Years 2 Source: ES2 - Serma Tech Report (2/19/99) Note: Sample size for each structure = 20. Additional Electromigration testing is ongoing. A sample of 15 devices with a straight line Metal 1 structure has been stressed for 300+ days at 200C and 3E06 Amps/cm2. To date 8 devices have failed. The estimated normalized Tf, 0.1% failure point is 2000 years. In addition Metal 3 testing is ongoing. There has been only 2 failures out of 15 devices after 60+ days of testing. The testing is being performed at 3.5E06 Amps/cm2 at 250C. Metal 1 Metal 3 Stress Temperature 200 250 Ea / n 0.6 / 2 0.6 / 2 Current Density J 3E06 3.5E06 Source: COS Tf 0.1% (hrs) 102 ongoing Normalized Use Tf 0.1% 2000 Years ongoing Note: Sample size for each structure = 15. Note: The above Normalized Use conditions are based on specified Operating Temperatures of 110C and Operating Current Densities of 2E05. 10 Rev. 2 – Jan 2002 MH1RT QualPack Time Dependent Dielectric Breakdown Gate oxide testing was performed on both 70 and 110 ang. A total of 750 samples were tested using the 70 ang oxide and a total of 500 samples were tested using the 110 ang oxide. Two tests were performed – the exponential current ramping test and the voltage ramping method. The following are the results of this testing: QBd Results (0.1 A/Cm2): Substrate Structure Nwell Structure Sample Size 70 ang Sample Size 110 ang % Defects below 1000 C/m2 70 ang % Defects below 1000 C/m2 110 ang 750 500 0.4% 0% 750 500 0.4% 0% Source: ES2 Note: Spec = 1.5%. Ramping Voltage Results (2 V/s): Area Substrate Structure Area Well Structure Edge Substrate Structure Edge Well Structure Sample Size 70 ang Sample Size 110 ang Dola/Dolp 70 ang Dola/Dolp 110 ang 750 500 0.09 0.43 750 500 0.13 0.43 750 500 0.01 0.01 750 500 0.01 0.01 Source: ES2 Note: Spec < 1. Rev.2 – Jan. 2002 11 MH1RT QualPack 4.3.4 Product Reliability Results This section summarizes the cumulated AT56KRT technology reliability data. Dynamic Operating Life Test A total of 100 samples were life tested at 140°C . To date there have been no failures from this testing. See results below: PART NUMBER EV29 MH1RT 65609E DRAF MH1242 LOT NUMBER E03624A A00422B A00650B SAMPLE SIZE 45 45 10 TOTAL CKT HRS (K) 2000 2000 2000 AMBIENT TEMP (°C) 140 140 140 Vcc (V) FAILURES 3.7 3.7 3.7 0 0 0 60% Confidence Estimate @ 50C & 0.6eV = 2.8 FITs 95% Confidence Estimate @ 50C & 0.6eV = 9.1 FITs Early Failure Rate 48 hours @ 140°C, 100 devices from 3 lots / 0 Failure 12 Rev. 2 – Jan 2002 MH1RT QualPack 4.4 Product Qualification 4.4.1 Device reliability This section summarizes the cumulated qualification data of the MH1RT products. Lots E03624A E03624A E03624A A00422B A00650B Device Type/ Technology EV29 MH1RT test vehicle EV29 MH1RT test vehicle EV29 MH1RT test vehicle Package: Side Braze 28 65609E 1MBIT SRAM SB32 DRAF MH1242 MQFPF 256 Test Description Step Result ESD 1000V 0/3 2000V 0/3 3000V 0/3 4000V 0/3 Latch-up: Supply overvoltage 1.5*Vcc 0/5 Power injection 50mW 0/5 Operating Life Test 12h 0/45 500h 0/45 1000h 0/45 2000h 0/45 0105h 0/45 0500h 0/45 1000h 0/45 2000h 0/45 12h 0/10 80h 0/10 500h 0/10 1000h 0/10 2000h 0/10 Operating Life Test Operating Life Test Comment Rev.2 – Jan. 2002 13 MH1RT QualPack 4.4.2 Packaging Reliability This section summarizes the packaging reliability data of the MH1RT products. Lots E03624A A00422F Device Type/ Technology EV29 MH1RT test vehicle Package: Side Braze 28 Test Description Step Result D3 Thermal Shocks Elect. Visual Herm. 0/15 0/15 0/15 D4 Mechanical Shocks Elect. Visual Herm. 0/15 0/15 0/15 65609E 1 MBIT SRAM MQFPF 32 D3 Thermal Shocks Elect. Visual Herm. 0/15 0/15 0/15 D4 Mechanical Shocks Elect. Visual Herm. 0/15 0/15 0/15 Comment 4.5 Qualification status: No failure noticed during MH1RT product qualification tests. MH1RT ASIC Sea of Gates library has been qualified on March 2000. MH1242 matrix tests allowed to extent the qualification domain up to the largest Sea of Gates size circuits. 14 Rev. 2 – Jan 2002 MH1RT QualPack 4.6 Irradiation 4.6.1 Conditions and Chronology The irradiation, according to the requirements of the MIL STD 883E method 1019.5, and the Radiation Test Plan RTP085 is done using gamma rays from Cobalt 60 source using the EV29 test vehicle. The bias schematic is as defined in the radiation test plan. The temperature inside the irradiator chamber is 25°C. In order to evaluate the influence of the internal bias of the device we decided to test 2 configurations. Half of the parts was initialized by loading the registers with 0 , the other half was initialized by loading the registers with 1. The irradiation sequence was fully static following the bias conditions defined in the RTP85. We affected the 18 parts following 5 distances in order to get 5 total dose set , which correspond to 5 dose rates during 20hours. Total dose 100Krads 200Krads 300Krads 400Krads 500Krads Init at 0 Sn1 Sn5 Sn8 Sn12 Sn15 Init at 0 Init at 0 Init at 1 Init at 1 Sn2 Sn3 Sn4 Sn6 Sn7 Sn9 Sn10 Sn11 Sn13 Sn14 Sn16 Sn17 Sn18 Comment The dosimetry has been controlled with a PTW probe referenced by the Laboratoire National Henri Becquerel with a 10% accuracy. The chronology of events is listed in table 1. The parts (all leads in short circuit) are transferred to the test area after the end of the irradiation without bias. The annealing sequence has been conducted as follows : - Storage at ambient temperature under bias. Electrical measurements at ambiant temperature until recovery of electrical parameters. Overtest (half total dose additional irradiation): Total dose 50Krads 100Krads 150Krads 200Krads 250Krads - Init at 0 Sn1 Sn5 Sn8 Sn12 Sn15 Init at 0 Init at 0 Init at 1 Init at 1 Sn2 Sn3 Sn4 Sn6 Sn7 Sn9 Sn10 Sn11 Sn13 Sn14 Sn16 Sn17 Sn18 Comment Storage at 100°C under bias during 168 hours. Electrical measurements at ambient temperature. Rev.2 – Jan. 2002 15 MH1RT QualPack 4.6.2 Results All the parts passed the functional test even after 500krads irradiation provided the power supply can deliver the requested current (range 2A) A . ICCSB (in mA on the graphs) : It is the most sensitive parameter . The measurement is done following three conditions: ICCSB00 the registers are loaded with 0 ICCSB10 the registers are loaded with a queue 01010… ICCSB11 the registers are loaded with 1. It has to be noticed that where the parts were irradiated with registers to 0 ICCSB00 is 0 All the other configuration exhibit a large increase of ICCSB higher than 1amp (The 3 first measurements were clamped to 250mA); The 3 weeks ambient annealing shows a slow but significant recovery of the parameter . The 2 last additional weeks of annealing was in dynamic mode (clk active in low frequency) and thus the recovery is fully achieved. The additional half dose irradiation test confirms the previous behavior and the high temperature annealing leads to an almost full recovery of the parameter. B. Input leakages (in uA on the graphs), Only IIL is affected on the parts at 400krads and 500krads . This is recovered after annealing. C.Tpd (TP8 given as an example in ns), Input clamp voltages No significant change can be observed even after 500krads irradiation. D. Output voltages These parameters drift slightly due to irradiation but remains inside the specifications limits. The recovery is achieved after ambient bias annealing . 4.6.3 Irradiation summary This test plan shows the high tolerance of the V29, MH1RT Test Vehicle to a total ionizing dose irradiation with Cobalt 60 gamma ray up to 500krads following the MIL STD 883 method 1019.5. The behavior noticed on the test vehicle during the qualification experiments can reasonably be predicted on the whole MH1RT product family. 16 Rev. 2 – Jan 2002 MH1RT QualPack 4.6.4 Irradiation test records #1 ICCSB00 (IRR0) #3 ICCSB00 (IRR1) #4 #5 #7 #6 0.012 0.01 0.008 0.006 0.004 0.002 0 #8 #9 #12 #13 #17 INIT BIAS 25°C BIAS 25°C BIAS 25°C BIAS 100°C #9 #12 #13 BIAS 100°C BIAS 25°C BIAS 25°C BIAS 100°C #4 #7 600 400 #10 200 #14 #15 BIAS 25°C BIAS 25°C 1000 800 #8 BIAS 25°C Ref 1200 #6 BIAS 25°C #18 #3 #5 INIT #14 ICCSB10(IRR1) #2 1200 1000 800 600 400 200 0 #11 INIT Ref #1 ICCSB10 (IRR0) #10 1400 1200 1000 800 600 400 200 0 #11 0 #16 INIT IRR BIAS BIAS BIAS BIAS BIAS +0.5 BIAS 25°C 25°C 25°C 25°C 25°C IRR 100°C #17 #18 Ref Ref ICCSB11 (IRR0) #1 #5 1200 #6 1000 #8 800 #9 600 #12 400 #13 200 #15 0 INIT IRR BIAS BIAS BIAS BIAS BIAS +0.5 BIAS 25°C 25°C 25°C 25°C 25°C IRR 100°C ICCSB11 (IRR1) #2 #16 #17 #3 800 700 600 500 400 300 200 100 0 #4 #7 #10 #11 #14 #18 INIT IRR BIAS BIAS BIAS BIAS BIAS +0.5 BIAS 25°C 25°C 25°C 25°C 25°C IRR 100°C Ref Ref Rev.2 – Jan. 2002 17 MH1RT QualPack #1 TP8 (IRR0) #2 #5 #6 #8 4 3.5 3 2.5 2 1.5 1 0.5 0 #9 #12 #13 #15 1 2 3 4 5 6 7 8 9 #1 #2 #5 IIL (IRR0) 1 0 -1 -2 -3 -4 -5 -6 -7 -8 1 2 3 4 5 6 7 8 9 #6 #8 #9 #12 #13 #15 #16 #17 Ref #2 #5 #6 0.49 0.48 0.47 0.46 0.45 0.44 0.43 0.42 0.41 #8 #9 #12 #13 #15 1 2 3 4 5 6 2.2 #3 #4 2.1 2 #7 #10 1.9 1.8 #11 #18 Ref 1.7 1.6 1 2 3 7 8 9 #16 #17 Ref 4 5 6 7 8 IIL(IRR1) 0.015 #3 #4 0.01 0.005 0 1 -0.005 2 3 4 5 6 7 8 9 -0.01 #7 #10 #14 #18 Ref -0.015 #1 VICH (IRR0) 18 #16 #17 Ref TP8 (IRR1) VICH(IRR1) 0.49 0.48 0.47 0.46 0.45 0.44 0.43 0.42 0.41 #3 #4 #7 #10 #11 #14 #18 1 2 3 4 5 6 7 8 9 Ref Rev. 2 – Jan 2002 MH1RT QualPack VICL (IRR1) VICL (IRR0) #1 #2 -0.39 #5 -0.4 #6 -0.41 -0.42 #8 #9 -0.42 -0.43 #12 -0.43 -0.44 #13 -0.44 #14 -0.45 #15 -0.45 -0.46 #16 #17 -0.46 #18 Ref -0.39 1 -0.4 2 3 4 5 6 7 8 9 -0.41 -0.47 Ref 1 2 3 4 5 6 7 8 9 #3 #4 #7 #10 #11 -0.47 VOH (IRR1) VOH (IRR0) #1 3 #2 #5 2.5 #6 #8 2 1.5 #9 #12 1 0.5 #13 0 1 2 3 4 5 6 7 8 9 #17 Ref #5 #6 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 #8 #9 #12 #13 #15 BIAS 25°C BIAS 25°C BIAS 25°C #3 #4 2.6 2.55 #7 #10 2.5 #11 #18 2.45 2.4 Ref 1 2 3 4 #1 #2 VOL (IRR0) INIT 2.65 BIAS 100°C #16 #17 5 6 7 8 9 VOL(IRR1) 0.25 #3 0.2 #4 0.15 #7 0.1 #10 #11 0.05 #18 0 1 2 3 4 5 6 7 8 9 Ref Rev.2 – Jan. 2002 19 MH1RT QualPack 5. Environmental Information Atmel Environmental Policy: Atmel is committed to providing a safe and healthy workplace and complying with all environmental regulations. Essential Elements Our environmental, health and safety goals are to prevent incidents that: Cause injury to our employees and visitors Harm the environment Cause property loss, and/or Result in business interruption Our goals also include a commitment to comply with environmental, health, and safety regulations, as well as a commitment to protect our human and natural resources. We believe that all accidents and undesirable environmental incidents are preventable. Furthermore, there is no job which should become so routine, or so urgent that it cannot be done safely and/or in an environmentally sound manner. Realization of these goals and objectives demand the support of every employee, at every level of the organization. Atmel employees must embrace this policy with the same spirit, commitment of resources, and intelligence, as we embrace customer satisfaction, product quality, and continuous improvement. As part of this corporate policy, Ozone Depleting Chemicals are being replaced either by Atmel Nantes or its sub-contractors. In addition the factory is committed in: - Reducing the use of harmful chemicals in its processes - Reducing the content of harmful materials in its products - Using recyclable materials wherever possible - Reducing the energy content of its products Atmel Nantes is ISO14001 certified since May 2000. 20 Rev. 2 – Jan 2002 MH1RT QualPack 6. Other Data 6.1 ISO9001 and QS900 Certificates Rev.2 – Jan. 2002 21 MH1RT QualPack 6.2 Data Book Reference The data sheet is available upon request to sales representative or in Atmel site: http://www.atmel.com/ Data sheet: MH1RT 1.6M used gate Sea of Gates Rad Tolerant Address References All inquiries relating to this document should be addressed to the following: Atmel Nantes BP70602 44306 Nantes Cedex 3 France Telephone (33) 2 40 18 18 18 Telefax (33) 2 40 18 19 00 Or Direct contact Pascal LECUYER Product Assurance Manager Telephone (33) 2 40 18 17 73 Telefax (33) 2 40 18 19 00 Remarks: The information given in this document is believed to be accurate and reliable. However, no responsibility is assumed by Atmel Nantes S.A. for its use. No specific guarantee or warranty is implied or given by this data unless agreed in writing elsewhere. Atmel Nantes S.A. reserves the right to update or modify this information without notification, at any time, in the interest of providing the latest information. Parts of this publication may be reproduced without special permission on the condition that our author and source are quoted and that two copies of such extracts are placed at our disposal after publication. Before use of such reproduced material the user should check that the information is current. Written permission must be obtained from the publisher for complete reprints or translations. 22 Rev. 2 – Jan 2002