s9684 etc kpic1056e

Photo IC for laser beam synchronous detection
S9684 series
S11282-01DS
High-sensitivity and high-speed photo IC for
high precision printing
The S9684 series and S11282-01DS photo IC use a dual-element Si PIN photodiode and compare the two signals to obtain a highly stable output even when laser power or ambient temperature fluctuates. The current amplifier is available
with two gain levels (6 times and 20 times) according to laser power to be used. The S11282-01DS operates at a low
voltage (3.3 V) compatible with low-voltage peripheral components. HAMAMATSU also provides single-element Si PIN
photodiode types (S10317 series).
Features
Applications
Photo IC for precision printing
Print start timing detection for laser printers, digital
copiers, fax machines, etc.
High sensitivity
Current amplifier gain: 20 times (S9684, S11282-01DS)
6 times (S9684-01)
Digital output
Small package
Suitable for lead-free solder reflow
Photosensitive area (PD1: 2.5 × 0.3 mm, PD2: 2.5 × 0.5 mm)
Low voltage (3.3 V) operation (S11282-01DS)
Absolute maximum ratings
Parameter
Supply voltage
Power dissipation*1
Output voltage*2
Output current
Ro1, Ro2 terminal current
Operating temperature
Storage temperature
Reflow soldering conditions*3
Symbol
Vcc
P
Vo
Io
IRO
Topr
Tstg
Tsol
Condition
Ta=25 °C
Ta=25 °C
Ta=25 °C
Ta=25 °C
Ta=25 °C
No condensation
No condensation
Value
-0.5 to +7
300
-0.5 to +7
5
3
-25 to +80
-40 to +85
Peak temperature 240 °C max., 1 time
Unit
V
mW
V
mA
mA
°C
°C
-
*1: Power dissipation decreases at a rate of 4 mW/°C above Ta=25 °C
*2: Vcc=+0.5 V or less
*3: JEDEC level 5a
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
www.hamamatsu.com
1
Photo IC for laser beam synchronous detection
S9684 series, S11282-01DS
Electrical and optical characteristics
[Ta=25 °C, λ=780 nm, Vcc=5 V (S9684 series)/3.3 V (S11282-01DS), Ro1=Ro2=5.1 kΩ, light
incident angle=normal line direction ±0°, unless otherwise noted]
Parameter
Symbol
S9684 series
S11282-01DS
S9684 series
S11282-01DS
Current consumption
High level output voltage
Low level output voltage
S9684
S9684-01
Threshold input power
Condition
Icc
No input
VOH
IOH=4 mA
VOL
IOL=4 mA, *4
Typ.
-
Max.
4
-
-
3.2
ΔtP
tr
tf
PI max.
Unit
mA
4.6
-
-
2.9
-
-
0.3
V
7.5
26
10
35
12.5
44
μW
10.5
14.5
18.5
-
4
4
-
±5
7
7
PTH × 8
PTH
S11282-01DS
Propagation delay time variation
Rise time
Fall time
Maximum input power
Min.
-
ΔPI= ±10%, *5 *6
V
ns
ns
ns
μW
*4: Input power PI=45 μW (S9684), 140 μW (S9684-01), 43.5 μW (S11282-01DS)
*5: Beam diameter (1/e2)=55 μm, scan speed=1.18 mm/μs
Not including jitter caused by polygon mirror nonuniformity, etc.
*6: PI=45 μW center (S9684), 140 μW center (S9684-01), 43.5 μW center (S11282-01DS)
Spectral response
Block diagram
(Typ. Ta=25 °C)
0.5
Vcc
0.1 µF
Photosensitivity (A/W)
0.4
Ro2
Current
amplifier
Vref
PD2
0.3
5 V (S9684 series)
3.3 V (S11282-01DS)
Ro1
External
gain resistance
Ro2
External
gain resistance
Ro1
0.2
PD1
0.1
Current
amplifier
Vo
GND
KPICC0108EB
0
200
400
600
800
1000
1200
Wavelength (nm)
KPICB0167EA
2
Photo IC for laser beam synchronous detection
Output waveforms of terminals 2, 3 and 5
PD1
S9684 series, S11282-01DS
Function
These products integrate a photodiode chip and an IC chip into the same
package. The photodiode chip is internally connected to the IC chip as shown
in the block diagram. The products should be used with terminals Ro1 and Ro2
connected to an external gain resistance.
Two photocurrents are generated when a laser beam enters the dual-element
photodiode. Each photocurrent is fed to the input terminal of the IC and, after
being amplified by the current amplifier, flows to the external gain resistance.
At this time, voltages VRO1 and VRO2 at terminals Ro1 and Ro2 are given by the
following expression.
VRO1 (VRO2)=A × S × PI × Ro1 (Ro2) [V]
A: Current amplifier gain (S9684, S11282-01DS: 20 times, S9684-01: 6 times)
S: Photodiode sensitivity [A/W] (approx. 0.45 A/W at 780 nm)
PI: Input power [W]
Ro1, Ro2: External gain resistance [Ω]; usable range 2 kΩ to 10 kΩ
VRO1 and VRO2 are input to the internal comparator so the output Vo is "high"
when VRO1 > VRO2 or "low" when VRO1 < VRO2.
Note that VRO1 and VRO2 should not exceed 8 times of the voltage calculated
from the threshold light level.
PD2
Scanning
direction
RO1
RO2
VO
KPICC0131EA
Dimensional outline (unit: mm)
PD2 PD1
1.0 ± 0.4
3.0*
1.0 ± 0.4
2.5
3.9
4.0*
0.5 0.3
3.4
Mirror area
range
3.8
0.5
0.3
Photosensitive
surface
4.0*
0.8 0.8 0.8 0.8
2.5
(10 ×) 0.3
(10 ×) 0.4
0.8
4.2 ± 0.2
3.2 ± 0.2
(Including burr) 0.67 (center of
photosensitive area)
0.05
0.27
5.0 ± 0.3
0.45 ± 0.3
3.0*
2.8
0.1 ± 0.1
0.15
2.4
Mirror area
range
2.9
3.0*
0.75
0.45 ± 0.3
1.3
Details of photodiode
Photosensitive
surface
Tolerance unless otherwise noted: ±0.1, ±2°
Shaded area indicates burr.
Chip position accuracy with respect to
package dimensions marked *
X, Y≤±0.2, 0≤±2°
Packing: stick (100 pcs/stick)
Tape-and-reel shipment is available (S9684-30/-31).
Vcc
Ro1
OUT
GND
Ro2
GND
GND
GND
GND
GND
KPICA
KPICA0056ED
3
Photo IC for laser beam synchronous detection
S9684 series, S11282-01DS
Recommended land pattern (unit: mm)
0.50
0.80
1.65
4.75
KPICC0235EA
Measured example of temperature profile with hot-air reflow oven for product testing
300 °C
240 °C max.
Temperature
220 °C
190 °C
170 °C
Preheating
70 to 90 s
Actual heating
40 s max.
Time
KPICB0164EC
∙ This product supports lead-free soldering. After unpacking, store it in an environment at a temperature of 30 °C or less and a
humidity of 60% or less, and perform soldering within 24 hours.
∙ The effect that the product receives during reflow soldering varies depending on the circuit board and reflow oven that are used.
Before actual reflow soldering, check for any problems by testing out the reflow soldering methods in advance.
4
Photo IC for laser beam synchronous detection
S9684 series, S11282-01DS
Related information
www.hamamatsu.com/sp/ssd/doc_en.html
Precautions
∙ Notice
∙ Surface mount type products / Precautions
Information described in this material is current as of February, 2014.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or
a suffix "(Z)" which means developmental specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product
use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KPIC1056E08 Feb. 2014 DN
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