Photo IC for laser beam synchronous detection S9684 series S11282-01DS High-sensitivity and high-speed photo IC for high precision printing The S9684 series and S11282-01DS photo IC use a dual-element Si PIN photodiode and compare the two signals to obtain a highly stable output even when laser power or ambient temperature fluctuates. The current amplifier is available with two gain levels (6 times and 20 times) according to laser power to be used. The S11282-01DS operates at a low voltage (3.3 V) compatible with low-voltage peripheral components. HAMAMATSU also provides single-element Si PIN photodiode types (S10317 series). Features Applications Photo IC for precision printing Print start timing detection for laser printers, digital copiers, fax machines, etc. High sensitivity Current amplifier gain: 20 times (S9684, S11282-01DS) 6 times (S9684-01) Digital output Small package Suitable for lead-free solder reflow Photosensitive area (PD1: 2.5 × 0.3 mm, PD2: 2.5 × 0.5 mm) Low voltage (3.3 V) operation (S11282-01DS) Absolute maximum ratings Parameter Supply voltage Power dissipation*1 Output voltage*2 Output current Ro1, Ro2 terminal current Operating temperature Storage temperature Reflow soldering conditions*3 Symbol Vcc P Vo Io IRO Topr Tstg Tsol Condition Ta=25 °C Ta=25 °C Ta=25 °C Ta=25 °C Ta=25 °C No condensation No condensation Value -0.5 to +7 300 -0.5 to +7 5 3 -25 to +80 -40 to +85 Peak temperature 240 °C max., 1 time Unit V mW V mA mA °C °C - *1: Power dissipation decreases at a rate of 4 mW/°C above Ta=25 °C *2: Vcc=+0.5 V or less *3: JEDEC level 5a Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. www.hamamatsu.com 1 Photo IC for laser beam synchronous detection S9684 series, S11282-01DS Electrical and optical characteristics [Ta=25 °C, λ=780 nm, Vcc=5 V (S9684 series)/3.3 V (S11282-01DS), Ro1=Ro2=5.1 kΩ, light incident angle=normal line direction ±0°, unless otherwise noted] Parameter Symbol S9684 series S11282-01DS S9684 series S11282-01DS Current consumption High level output voltage Low level output voltage S9684 S9684-01 Threshold input power Condition Icc No input VOH IOH=4 mA VOL IOL=4 mA, *4 Typ. - Max. 4 - - 3.2 ΔtP tr tf PI max. Unit mA 4.6 - - 2.9 - - 0.3 V 7.5 26 10 35 12.5 44 μW 10.5 14.5 18.5 - 4 4 - ±5 7 7 PTH × 8 PTH S11282-01DS Propagation delay time variation Rise time Fall time Maximum input power Min. - ΔPI= ±10%, *5 *6 V ns ns ns μW *4: Input power PI=45 μW (S9684), 140 μW (S9684-01), 43.5 μW (S11282-01DS) *5: Beam diameter (1/e2)=55 μm, scan speed=1.18 mm/μs Not including jitter caused by polygon mirror nonuniformity, etc. *6: PI=45 μW center (S9684), 140 μW center (S9684-01), 43.5 μW center (S11282-01DS) Spectral response Block diagram (Typ. Ta=25 °C) 0.5 Vcc 0.1 µF Photosensitivity (A/W) 0.4 Ro2 Current amplifier Vref PD2 0.3 5 V (S9684 series) 3.3 V (S11282-01DS) Ro1 External gain resistance Ro2 External gain resistance Ro1 0.2 PD1 0.1 Current amplifier Vo GND KPICC0108EB 0 200 400 600 800 1000 1200 Wavelength (nm) KPICB0167EA 2 Photo IC for laser beam synchronous detection Output waveforms of terminals 2, 3 and 5 PD1 S9684 series, S11282-01DS Function These products integrate a photodiode chip and an IC chip into the same package. The photodiode chip is internally connected to the IC chip as shown in the block diagram. The products should be used with terminals Ro1 and Ro2 connected to an external gain resistance. Two photocurrents are generated when a laser beam enters the dual-element photodiode. Each photocurrent is fed to the input terminal of the IC and, after being amplified by the current amplifier, flows to the external gain resistance. At this time, voltages VRO1 and VRO2 at terminals Ro1 and Ro2 are given by the following expression. VRO1 (VRO2)=A × S × PI × Ro1 (Ro2) [V] A: Current amplifier gain (S9684, S11282-01DS: 20 times, S9684-01: 6 times) S: Photodiode sensitivity [A/W] (approx. 0.45 A/W at 780 nm) PI: Input power [W] Ro1, Ro2: External gain resistance [Ω]; usable range 2 kΩ to 10 kΩ VRO1 and VRO2 are input to the internal comparator so the output Vo is "high" when VRO1 > VRO2 or "low" when VRO1 < VRO2. Note that VRO1 and VRO2 should not exceed 8 times of the voltage calculated from the threshold light level. PD2 Scanning direction RO1 RO2 VO KPICC0131EA Dimensional outline (unit: mm) PD2 PD1 1.0 ± 0.4 3.0* 1.0 ± 0.4 2.5 3.9 4.0* 0.5 0.3 3.4 Mirror area range 3.8 0.5 0.3 Photosensitive surface 4.0* 0.8 0.8 0.8 0.8 2.5 (10 ×) 0.3 (10 ×) 0.4 0.8 4.2 ± 0.2 3.2 ± 0.2 (Including burr) 0.67 (center of photosensitive area) 0.05 0.27 5.0 ± 0.3 0.45 ± 0.3 3.0* 2.8 0.1 ± 0.1 0.15 2.4 Mirror area range 2.9 3.0* 0.75 0.45 ± 0.3 1.3 Details of photodiode Photosensitive surface Tolerance unless otherwise noted: ±0.1, ±2° Shaded area indicates burr. Chip position accuracy with respect to package dimensions marked * X, Y≤±0.2, 0≤±2° Packing: stick (100 pcs/stick) Tape-and-reel shipment is available (S9684-30/-31). Vcc Ro1 OUT GND Ro2 GND GND GND GND GND KPICA KPICA0056ED 3 Photo IC for laser beam synchronous detection S9684 series, S11282-01DS Recommended land pattern (unit: mm) 0.50 0.80 1.65 4.75 KPICC0235EA Measured example of temperature profile with hot-air reflow oven for product testing 300 °C 240 °C max. Temperature 220 °C 190 °C 170 °C Preheating 70 to 90 s Actual heating 40 s max. Time KPICB0164EC ∙ This product supports lead-free soldering. After unpacking, store it in an environment at a temperature of 30 °C or less and a humidity of 60% or less, and perform soldering within 24 hours. ∙ The effect that the product receives during reflow soldering varies depending on the circuit board and reflow oven that are used. Before actual reflow soldering, check for any problems by testing out the reflow soldering methods in advance. 4 Photo IC for laser beam synchronous detection S9684 series, S11282-01DS Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Notice ∙ Surface mount type products / Precautions Information described in this material is current as of February, 2014. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KPIC1056E08 Feb. 2014 DN 5