s10317 etc kpic1067e

Photo IC for laser beam synchronous detection
S10317 series S11257 series
Low voltage operation (3.3 V)
The S10317/S11257 series photo IC use a high-speed PIN photodiode designed for laser beam synchronous detection. They operate at a low voltage (3.3 V) compatible with low-voltage peripheral components mounted on the same
PC board. Two types of current amplifiers are available with a gain of 6 times (S10317-01, S11257-01DT) and 20 times
(S10317, S11257-02DT) that can be selected according to laser power to be used. HAMAMATSU also provides a 5 V operation type (S9703 series) and dual-element Si PIN photodiode types (S9684 series, S11282-01DS).
Features
Applications
Low voltage operation (3.3 V)
Print start timing detection for laser printers, digital
copiers, fax machines, etc.
High sensitivity
Current amplifier gain: 20 times (S10317, S11257-02DT)
6 times (S10317-01, S11257-01DT)
Digital output
Small package
Suitable for lead-free solder reflow
photosensitive area: 2.84 × 0.5 mm (S10317 series)
2.84 × 0.25 mm (S11257 series)
Absolute maximum ratings
Parameter
Supply voltage
Power dissipation*1
Output voltage*2
Output current
Ro terminal current
Operating temperature
Storage temperature
Reflow soldering conditions*3
Symbol
Vcc
P
Vo
Io
IRO
Topr
Tstg
Tsol
Condition
Ta=25 °C
Ta=25 °C
Ta=25 °C
Ta=25 °C
Ta=25 °C
Value
-0.5 to +7
300
-0.5 to +7
5
3
-25 to +80
-40 to +85
Peak temperature 240 °C max., 1 time
Unit
V
mW
V
mA
mA
°C
°C
-
*1: Power dissipation decreases at a rate of 4 mW/°C above Ta=25 °C.
*2: Vcc=+0.5 V or less
*3: JEDEC level 5a
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
www.hamamatsu.com
1
Photo IC for laser beam synchronous detection
S10317/S11257 series
Electrical and optical characteristics
(Ta=25 °C, λ=780 nm, Vcc=3.3 V, Ro=5.1 kΩ, light incident angle=normal line direction ±0°,
unless otherwise noted)
Parameter
Symbol
S10317 series
S11257 series
Recommended
operation voltage
Condition
-
Current consumption
High level output voltage
Low level output voltage
S10317, S11257-02DT
Threshold input power
S10317-01, S11257-01DT
H→L propagation delay S10317, S11257-02DT
time
S10317-01, S11257-01DT
L→H propagation delay S10317, S11257-02DT
time
S10317-01, S11257-01DT
Rise time
Fall time
Maximum input power
Icc
VOH
VOL
No input
IOH=4 mA
IOL=4 mA*4
PTH
tPHL
tPLH
tr
tf
PI max.
PI=57 μW
(S10317, S11257-02DT)
PI=186 μW
(S10317-01, S11257-01DT)
Duty ratio 1:1
CL=15 pF*5
Min.
Typ.
Max.
Unit
3.13
3.135
3.3
3.3
3.6
3.45
V
2.9
14
49.5
-
0.7
19
62
130
100
200
150
4
4
-
1.5
0.3
24
74.5
250
200
300
250
7
7
PTH × 8
mA
V
V
μW
ns
ns
ns
μW
*4: Input power PI=57 μW (S10317, S11257-02DT), 186 μW (S10317-01, S11257-01DT)
*5: Measured with a pulse-driven laser diode. Input light-pulse rise time and fall times are 1 ns or less.
100%
Input light
level
50%
0%
tPHL
tPLH
90%
Output
1.5 V
10%
tf
tr
KPICC0112EA
Spectral response
(Typ. Ta=25 °C)
0.5
Photosensitivity (A/W)
0.4
0.3
0.2
0.1
0
200
400
600
800
1000
1200
Wavelength (nm)
KPICB0166EA
2
Photo IC for laser beam synchronous detection
S10317/S11257 series
Block diagram
Vcc
Vref
Current
amplifier
Photodiode
0.1 μF
3.3 V
Vo
Ro
External
gain resistance
Ro
GND
KPICC0127EA
Function
These products integrate a photodiode chip and an IC chip into the same package. The photodiode chip is internally connected to the IC
chip as shown in the block diagram. The products should be used with terminal Ro connected to an external gain resistance Ro.
A photocurrent is generated when a laser beam enters the photodiode. This photocurrent is fed to the input terminal of the IC and, after
being amplified by the current amplifier, flows to the external gain resistance. At this time, voltages VRO at terminal Ro is given by the
following expression.
VRO=A × S × PI × Ro [V] ·········· (1)
A: Current amplifier gain (S10317, S11257-02DT: 20 times, S10317-01, S11257-01DT: 6 times)
S: Photodiode sensitivity [A/W] (approx. 0.44 A/W at 780 nm)
PI: Input power [W]
Ro: External gain resistance [Ω]; usable range 2 kΩ to 10 kΩ
VRO is input to the internal comparator and compared with the internal reference voltage Vref (approx. 0.8 V) so the output Vo is “High”
when VRO < Vref or “Low” when VRO > Vref.
We recommend that VRO be set higher than 1.5 V but lower than 8 times of VRO calculated from equation (1) where P1 is the threshold
input power.
Also set the Ro resistance so that the Ro terminal current does not exceed the absolute maximum rating of 3 mA.
(Monitoring VRO shows that it is limited to about 2 V (with respect to GND) by the voltage limiting circuit. Keep this in mind when
monitoring.)
3
Photo IC for laser beam synchronous detection
S10317/S11257 series
Dimensional outline (unit: mm)
S10317 series
3.2 ± 0.2
(Including burr)
0.66
3.0*
1.0 ± 0.4
4.0*
3.9
3.4
Mirror area
range
3.8
4.2 ± 0.2
0.8 0.8 0.8 0.8
0.15
2.84
1.0 ± 0.4
4.0*
Photosensitive
surface
0.5
(9 ×) 0.3
(9 ×) 0.4
Center of
photosensitive area
0.05
0.35
5.0 ± 0.3
0.45 ± 0.3
0.75
3.0*
0.45 ± 0.3
2.8
Photosensitive
surface
Tolerance unless otherwise noted: ±0.1, ±2°
Shaded area indicates burr.
Chip position accuracy with respect to
package dimensions marked *
X, Y≤±0.2, θ≤±2°
0.1 ± 0.1
0.15
2.4
Mirror area
range
1.3
Vcc
NC
OUT
GND
Ro
2.9
3.0*
GND
GND
GND
GND
KPICA0070ED
KPICA0070ED
S11257 series
3.2 ± 0.2
(Including burr)
0.54 ± 0.2
(0.3)
1.0 ± 0.4
3.0*
3.9
4.0*
3.4
Mirror area
range
3.8
4.0*
0.8 0.8 0.8 0.8
0.15 ± 0.2
4.2 ± 0.2
Photosensitive
surface
0.25
2.84
(9 ×) 0.3
(9 ×) 0.4
Center of
photosensitive area
0.05
1.0 ± 0.4
0.35
0.75
5.0 ± 0.3
0.45 ± 0.3
0.45 ± 0.3
2.8
Photosensitive
surface
0.1 ± 0.1
2.4
Mirror area
range
0.15
1.3
3.0*
2.9
3.0*
Tolerance unless otherwise noted: ±0.1, ±2°
Shaded area indicates burr.
Values in parentheses indicate reference value.
Chip position accuracy with respect to
package dimensions marked *
X, Y≤±0.2, θ≤2°
Vcc
NC
OUT
GND
Ro
GND
GND
GND
GND
KPICA0089EB
4
Photo IC for laser beam synchronous detection
S10317/S11257 series
Recommended land pattern (unit: mm)
1.65
0.8
0.7
4.75
KPICB0224EA
Standard packing specifications
Reel (conforms to JEITA ET-7200)
Dimensions
254 mm
Hub diameter
100 mm
Tape width
12 mm
Material
PS
Electrostatic characteristics
Antistatic treatmet
8.0 ± 0.1
4.0 ± 0.1
1.55 ± 0.1
2.0 ± 0.1
1.75 ± 0.1
Embossed tape (unit: mm, material: PS, conductive)
0.3 ± 0.05
12.0 ± 0.3
4.5 ± 0.2
5.5 ± 0.1
2.3 ± 0.2
5.4 ± 0.2
Reel feed direction
KPICC0225EA
Packing quantity
2000 pcs/reel
Packing type
Reel and desiccant in moisture-proof packaging (vacuum-sealed)
5
Photo IC for laser beam synchronous detection
S10317/S11257 series
Measured example of temperature profile with our hot-air reflow oven for product testing
300 °C
240 °C max.
Temperature
220 °C
190 °C
170 °C
Preheat
70 ŵŰġ90 s
Soldering
40 s max.
Time
KPICB0164EC
∙ This product supports lead-free soldering. After unpacking, store it in an environment at a temperature of 30 °C or less and a
humidity of 60% or less, and perform soldering within 24 hours.
∙ The effect that the product receives during reflow soldering varies depending on the circuit board and reflow oven that are used.
Before actual reflow soldering, check for any problems by tesitng out the reflow soldering methods in advance.
Related information
www.hamamatsu.com/sp/ssd/doc_en.html
Precautions
∙ Notice
∙ Surface mount type products / Precautions
Information described in this material is current as of December, 2013.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or
a suffix "(Z)" which means developmental specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product
use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KPIC1067E05 Dec. 2013 DN
6