PHOTO IC Photo IC for laser beam synchronous detection S9684 series High-sensitivity and high-speed photo IC for high precision printing S9684 series photo IC uses a dual-element Si PIN photodiode and compares the two signals to obtain a highly stable output even when laser power or ambient temperature fluctuates. The current amplifier is available with two gain levels (6 times and 20 times) according to laser power to be used. Hamamatsu also provides S9703 series photo IC that uses a single-element Si PIN photodiode. Features l Photo IC for precision printing l High sensitivity Applications l Print start timing detection for laser printers, digital copiers, fax machines, etc. Current amplifier gain: 20 times (S9684) 6 times (S9684-01) l Digital output l Small package l Suitable for lead-free solder reflow l Active area (PD1: 2.5 × 0.5 mm, PD2: 2.5 × 0.3 mm) ■ Absolute maximum ratings (Ta=25 °C) Parameter Symbol Supply voltage Vcc Power dissipation *1 P Output voltage *2 Vo Output current Io Ro1, Ro2 terminal current IRO Operating temperature Topr Storage temperature Tstg *1: Derate power dissipation at a rate of -4 mW/°C above Ta=25 °C *2: Vcc=+0.5 V or less Value -0.5 to +7 300 -0.5 to +7 5 3 -25 to +80 -40 to +85 Unit V mW V mA mA °C °C ■ Electrical and optical characteristics (Ta=25 °C, λ=780 nm, Vcc=5 V, Ro1=Ro2=5.1 kΩ, unless otherwise noted) Parameter Symbol Condition Current consumption Icc No input High level output voltage VOH IOH=4 mA Low level output voltage VOL IOL=4 mA, *3 S9684 Threshold input power PTH S9684-01 Propagation delay time variation ∆tP ∆PI= ±10 %, *4, *5 Rise time tr Fall time tf Maximum input power PI Max. *3: PI=45 µW (S9684), PI=140 µW (S9684-01) *4: Beam diameter (1/e2)=55 µm, scan speed=1.18 mm/µs Not including jitter caused by polygon mirror non-uniformity, etc. *5: PI=45 µW center (S9684), PI=140 µW center (S9684-01) Min. 4.6 7.5 26 - Typ. 10 35 4 4 - Max. 4 0.3 12.5 44 ±5 7 7 PTH × 8 Unit mA V V µW ns ns ns µW 1 Photo IC for laser beam synchronous detection S9684 series ■ Output waveforms of terminals 2, 3 and 5 ■ Block diagram PD1 Vcc 0.1 µF PD2 5V SCANNING DIRECTION Ro2 CURRENT AMPLIFIER EXTERNAL GAIN RESISTANCE Ro2 Vref PD2 Ro1 EXTERNAL GAIN RESISTANCE Ro1 CURRENT AMPLIFIER Vo RO1 RO2 GND VO PD1 KPICC0131EA KPICC0108EA ■ Function S9684 series photo IC integrates a photodiode chip and an IC chip into the same package. The photodiode chip is internally connected to the IC chip as shown in the block diagram. S9684 series should be used with terminals Ro1 and Ro2 connected to an external gain resistance. Two photocurrents are generated when a laser beam enters the dual-element photodiode. Each photocurrent is fed to the input terminal of the IC and, after being amplified by the current amplifier, flows to the external gain resistance. At this time, voltages VRO1 and VRO2 at terminals Ro1 and Ro2 are given by the following expression. VRO1 (VRO2)=A × S × PI × Ro1 (Ro2) [V] A: Current amplifier gain (S9684: 20 times, S9684-01: 6 times) S: Photodiode sensitivity [A/W] (approx. 0.45 A/W at 780 nm) PI: Input power [W] Ro1, Ro2: External gain resistance [Ω]; usable range 2 kΩ to 10 kΩ VRO1 and VRO2 are input to the internal comparator so the output Vo is “High” when VRO1 > VRO2 or “Low” when VRO1 < VRO2. We recommend using S9684 series under the operating conditions that VRO1 and VRO2 are 2 to 3 V. ■ Dimensional outline (unit: mm) PD2 PD1 1.0 ± 0.4 3.0 * 1.0 ± 0.4 2.5 3.9 4.0 * 0.5 0.3 3.4 MIRROR AREA RANGE 3.8 0.5 0.3 PHOTOSENSITIVE SURFACE 4.0 * 0.8 0.8 0.8 0.8 2.5 (10 ×) 0.3 (10 ×) 0.4 0.8 4.2 ± 0.2 3.2 ± 0.2 (INCLUDING BURR) 0.67 (CENTER OF ACTIVE AREA) 0.05 0.27 5.0 ± 0.3 0.45 ± 0.3 3.0 * 2.8 0.1 ± 0.1 0.15 2.4 MIRROR AREA RANGE 2.9 3.0 * 0.75 0.45 ± 0.3 PHOTOSENSITIVE SURFACE 1.3 Tolerance unless otherwise noted: ±0.1, ±2˚ Shaded area indicates burr. Chip position accuracy with respect to the package dimensions marked * X, Y≤±0.2 Vcc Ro1 OUT GND Ro2 DETAILS OF PHOTODIODE GND GND GND GND GND KPICA0056EB KPICA00 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 2 Cat. No. KPIC1056E04 Aug. 2007 DN