TLVD4200 Datasheet

TLVD4200
www.vishay.com
Vishay Semiconductors
DH Backlighting LED in Ø 3 mm Tinted Non-Diffused Package
FEATURES
• High brightness
• Wide viewing angle
• Categorized for luminous flux
• Available in DH red
• Tinted clear package
19231
• Low power dissipation
DESCRIPTION
• Low self heating
The TLVD4200 serie was developed for backlighting in the
extrem bright double heterojunction (DH) red GaAlAs on
GaAs technology. Due to its special shape the spatial
distribution of the radiation is qualified for backlighting.
• Rugged design
• High reliability
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
To optimize the brightness of backlighting a custom-built
reflector (with scattering) is required. Uniform illumination
can be enhanced by covering the front of the reflector with
diffusor material.
APPLICATIONS
• Backlighting of display panels, LCD displays, symbols on
switches, keyboards, graphic boards, and measuring
scales
This is a bright and flexible solution for backlighting different
areas.
• Illumination of large areas e.g. dot matrix displays
PRODUCT GROUP AND PACKAGE DATA
• Product group: LED
• Package: 3 mm backlighting
• Product series: standard
• Angle of half intensity: ± 85°
PARTS TABLE
PART
COLOR
LUMINOUS FLUX
(mlm)
MIN.
TYP. MAX.
at IF
(mA)
WAVELENGTH
(nm)
MIN.
TYP. MAX.
at IF
(mA)
FORWARD VOLTAGE
(V)
MIN.
TYP.
MAX.
at IF
(mA)
TECHNOLOGY
TLVD4200
Red
40
130
-
15
-
640
-
10
-
1.8
2.2
20
GaAIAs on GaAs
TLVD4200-MSZ
Red
40
130
-
15
-
640
-
10
-
1.8
2.2
20
GaAIAs on GaAs
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
TLVD4200
SYMBOL
VALUE
Reverse voltage
PARAMETER
TEST CONDITION
VR
6
UNIT
V
DC forward current
IF
50
mA
tp ≤ 10μs
IFSM
1
A
Tamb ≤ 60 °C
PV
100
mW
Tj
100
°C
Operating temperature range
Tamb
-40 to +100
°C
Storage temperature range
Tstg
-55 to +100
°C
Tsd
260
°C
RthJA
400
K/W
Surge forward current
Power dissipation
Junction temperature
Soldering temperature
Thermal resistance junction/ambient
Rev. 2.0, 27-Jan-15
t ≤ 5 s, 2 mm from body
Document Number: 83058
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TLVD4200
www.vishay.com
Vishay Semiconductors
OPTICAL AND ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
TLVD4200, RED
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Luminous flux
IF = 15 mA
φV
40
130
-
mlm
Dominant wavelength
IF = 10 mA
λd
-
640
-
nm
Peak wavelength
IF = 10 mA
λp
-
650
-
nm
Angle of half intensity
IF = 10 mA
ϕ
-
± 85
-
deg
Forward voltage
IF = 20 mA
VF
-
1.8
2.2
V
IR = 10 μA
VR
6
15
-
V
VR = 0 V, f = 1 MHz
Cj
-
50
-
pF
Reverse voltage
Junction capacitance
LUMINOUS FLUX CLASSIFICATION
GROUP
LUMINOUS FLUX (mlm)
STANDARD
MIN.
U
40
MAX.
80
V
63
125
W
100
200
X
130
260
Y
180
360
Z
240
480
Note
• Luminous flux is tested at a current pulse duration of 25 ms.
The above type numbers represent the order groups which include only a few brightness groups. Only one group will be shipped on each
bag (there will be no mixing of two groups in each bag).
In order to ensure availability, single brightness groups will not be orderable.
In a similar manner for colors where wavelength groups are measured and binned, single wavelength groups will be shipped on any one bag.
In order to ensure availability, single wavelength groups will not be orderable.
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
10 000
Tamb ≤ 65 °C
50
1000
I F - Forward Current (mA)
IF - Forward Current (mA)
60
40
30
20
10
0
0
95 10095
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 1 - Forward Current vs. Ambient Temperature
Rev. 2.0, 27-Jan-15
t p /T= 0.01
0.02
0.05
100
1
10
1
0.01
95 10047
0.5
0.1
0.2
0.1
1
10
100
t p - Pulse Length (ms)
Fig. 2 - Forward Current vs. Pulse Length
Document Number: 83058
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TLVD4200
www.vishay.com
Vishay Semiconductors
100
10
Φ V rel - Relative Luminous Flux
IF - Forward Current (mA)
red
10
1
1
1.5
2
VF - Forward Voltage (V)
95 10014
0.1
1
10
100
IF - Forward Current (mA)
96 11607
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 6 - Relative Luminous Flux vs. Forward Current
2.0
1.2
red
Irel - Relative Luminous Intensity
Φ V rel - Relative Luminous Flux
1
0.01
0.1
3
2.5
red
1.6
1.2
0.8
0.4
red
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
Tamb - Ambient Temperature (°C)
96 11605
0
600
100
95 10018
Fig. 4 - Relative Luminous Flux vs. Ambient Temperature
620
640
660
680
700
- Wavelength (nm)
Fig. 7 - Relative Intensity vs. Wavelength
0°
10°
20°
30°
40°
IV rel - Relative Luminous Intensity
2.4
Φ V rel - RelativeLuminous Flux
red
2.0
1.6
1.2
0.8
0.4
IFAV = 10 mA, const.
50°
60°
70°
80°
0
96 11606
10
20
50
1
0.5
0.2
100
0.1
200
500
IF (mA)
0.05
0.02
tp/T
Fig. 5 - Relative Luminous Flux vs. Forward Current / Duty Cycle
Rev. 2.0, 27-Jan-15
1.0 0.8 0.6 0.4 0.2
0
0.2 0.4 0.6 0.8 1.0
96 11608
Fig. 8 - Relative Luminous Intensity vs.
Angular Displacement for 90 ° Emission Angle
Document Number: 83058
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TLVD4200
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
A
< 0.6
(1.3)
2.4 ± 0.1
AREA NOT PLANE
4.6 ± 0.3
33.08 ± 0.5
3.2 ± 0.3
Ø 3.4 ± 0.15
C
Ø 2.95 ± 0.1
1.5 ± 0.5
+ 0.15
+ 0.2
0.5 - 0.1
0.4 - 0.05
technical drawings
according to DIN
specifications
2.54 nom.
Drawing-No.: 6.544-5226.01-4
Issue: 2; 28.07.14
AMMOPACK
Tape feed direction
Diodes: cathode before anode
Transistors: collector before emitter
Label
Tape feed direction
Diodes: anode before cathode
Transistors: emitter before collector
94 8667-2
Fig. 9 - Tape Direction
Note
• The new nomenclature for ammopack is e.g. ASZ only, without
suffix for the LED orientation. The carton box has to be turned to
the desired position: “+” for anode first, or “-” for cathode first.
AS12Z and AS21Z are still valid for already existing types, BUT
NOT FOR NEW DESIGN.
Rev. 2.0, 27-Jan-15
Document Number: 83058
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TLVD4200
www.vishay.com
Vishay Semiconductors
TAPE DIMENSIONS in millimeters
±1
±2
“H”
± 0.5
9
12 ± 0.3
18
+1
- 0.5
0.3 ± 0.2
12.7 ± 1
0.9 max.
Ø4
2.54
± 0.2
+ 0.6
- 0.1
5.08 ± 0.7
6.35
12.7 ± 0.2
Quantity per:
± 0.7
Measure limit over 20 index-holes: ± 1
Reel
(Mat. - No. 1764)
2000
94 8171
Rev. 2.0, 27-Jan-15
Option
Dim. “H” ± 0.5 mm
MS
25.5
Document Number: 83058
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000