TLHK44R1S2 Datasheet

TLHK44R1S2
www.vishay.com
Vishay Semiconductors
High Intensity LED in Ø 3 mm Tinted Diffused Package
FEATURES
• AlInGaP technology
• Standard Ø 3 mm (T-1) package
• Small mechanical tolerances
• Suitable for DC and high peak current
• Small viewing angle
• Very high intensity
19222
• Luminous intensity categorized
DESCRIPTION
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
This device has been designed to meet the increasing
demand for AlInGaP technology for general indicating and
lighting purposes.
APPLICATIONS
It is housed in a 3 mm diffused plastic package. The wide
viewing angle of these devices provides a high brightness
across a large field of view.
• Status lights
• Off / on indicator
All packing units are categorized in luminous intensity
groups. That allows users to assemble LEDs with uniform
appearance.
• Background illumination
PRODUCT GROUP AND PACKAGE DATA
• Legend light
• Readout lights
• Maintenance lights




• Product group: LED
• Package: 3 mm
• Product series: standard
• Angle of half intensity: ± 30°
PARTS TABLE
PART
COLOR
TLHK44R1S2
LUMINOUS INTENSITY
(mcd)
MIN.
TYP.
MAX.
112
180
280
Red
at IF
(mA)
20
WAVELENGTH
(nm)
MIN.
-
TYP. MAX.
630
-
at IF
(mA)
FORWARD VOLTAGE
(V)
MIN.
TYP.
MAX.
-
1.9
2.6
20
at IF
(mA)
TECHNOLOGY
20
AlInGaP on GaAs
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
TLHK44R1S2
PARAMETER
TEST CONDITION
SYMBOL
VALUE
VR
5
V
Tamb  60 °C
IF
30
mA
tp  10 μs
IFSM
0.1
A
Tamb  60 °C
PV
80
mW
Reverse voltage (1)
DC forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
t  5 s, 2 mm from body
Thermal resistance junction/ambient
UNIT
Tj
100
°C
Tamb
-40 to +100
°C
Tstg
-55 to +100
°C
Tsd
260
°C
RthJA
400
K/W
Note
(1) Driving the LED in reverse direction is suitable for a short term application
Rev. 1.2, 14-Oct-14
Document Number: 83438
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TLHK44R1S2
www.vishay.com
Vishay Semiconductors
OPTICAL AND ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
TLHK44R1S2, RED
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Luminous intensity (1)
PARAMETER
IF = 20 mA
IV
112
180
280
mcd
Dominant wavelength
IF = 20 mA
d
-
630
-
nm
Peak wavelength
IF = 20 mA
p
-
643
-
nm
Angle of half intensity
IF = 20 mA

-
± 30
-
deg
Forward voltage
IF = 20 mA
VF
-
1.9
2.6
V
Reverse voltage
IR = 10 μA
VR
5
-
-
V
VR = 0, f = 1 MHz
Cj
-
15
-
pF
Junction capacitance
Note
(1) In one packing unit I
Vmax./IVmin.  1.6
LUMINOUS INTENSITY CLASSIFICATION
GROUP
LIGHT INTENSITY (mcd)
STANDARD
OPTIONAL
MIN.
MAX.
1
112
140
2
140
180
1
180
224
2
224
280
R
S
Note
• Luminous intensity is tested at a current pulse duration of 25 ms
and an accuracy of ± 11 %.
The above type numbers represent the order groups which
include only a few brightness groups. Only one group will be
shipped on each bag (there will be no mixing of two groups on
each bag).
In order to ensure availability, single brightness groups will not
be orderable.
In a similar manner for colors where wavelength groups are
measured and binned, single wavelength groups will be shipped
on any one bag.
In order to ensure availability, single wavelength groups will not
be orderable.
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
0°
IV rel - Relative Luminous Intensity
I F - Forward Current (mA)
60
50
40
30
20
10
0
0
95 10894
20
40
60
80
Fig. 1 - Forward Current vs. Ambient Temperature for InGaN
Rev. 1.2, 14-Oct-14
20°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
100
T amb - Ambient Temperature (°C)
10°
80°
0.6
0.4
0.2
0
0.2
0.4
0.6
95 10042
Fig. 2 - Relative Luminous Intensity vs. Angular Displacement
Document Number: 83438
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TLHK44R1S2
www.vishay.com
Vishay Semiconductors
10
IV rel - Relative Luminous Intensity
IF - Forward Current (mA)
100
10
1.5
2.0
2.5
0.1
1
3.0
Fig. 3 - Forward Current vs. Forward Voltage
10
100
IF - Forward Current (mA)
19113
VF - Forward Voltage (V)
Fig. 6 - Relative Luminous Intensity vs. Forward Current
1.6
1.2
1.0
Irel - Relative Intensity
I V rel - Relative Luminous Intensity
1
0.01
1
1.0
1.2
0.8
0.4
0.8
0.6
0.4
0.2
I F = 10 mA
0
0
20
40
60
80
100
0.0
600
96 12075
Tamb - Ambient Temperature (°C)
96 12077
Fig. 4 - Rel. Luminous Intensity vs. Ambient Temperature
ΔVF - Change of Forward Voltage (mV)
red
620
640
660
680
700
λ - Wavelength (nm)
Fig. 7 - Relative Intensity vs. Wavelength
200
100
0
- 100
- 200
- 300
0
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 5 - Change of Forward Voltage vs. Ambient Temperature
Rev. 1.2, 14-Oct-14
Document Number: 83438
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TLHK44R1S2
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
C
Ø 3.2 ± 0.15
A
AREA NOT PLANE
5.8 ± 0.3
34.4 ± 0.5
< 0.6
(2.5)
3.4 ± 0.15
4.4 ± 0.3
R1.4 (sphere)
Ø 2.9 ± 0.15
2.54 nom.
1.5 ± 0.5
+ 0.15
+ 0.2
0.5 - 0.1
0.4 - 0.05
technical drawings
according to DIN
specifications
Drawing-No.: 6.544-5255.01-4
Issue: 9; 28.07.14
Rev. 1.2, 14-Oct-14
Document Number: 83438
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000