IDT IDT74FCT163827A

IDT74FCT163827A/C
3.3V CMOS 20-BIT BUFFER
INDUSTRIAL TEMPERATURE RANGE
3.3V CMOS 20-BIT
BUFFER
FEATURES:
IDT74FCT163827A/C
DESCRIPTION:
• 0.5 MICRON CMOS Technology
• Typical tSK(o) (Output Skew) < 250ps
• ESD > 2000V per MIL-STD-883, Method 3015; > 200V using
machine model (C = 200pF, R = 0)
• VCC = 3.3V ± 0.3V, Normal Range, or VCC = 2.7V to 3.6V, Extended
Range
µ W typ. static)
• CMOS power levels (0.4µ
• Rail-to-rail output swing for increased noise margin
• Low Ground Bounce (0.3V typ.)
• Inputs (except I/O) can be driven by 3.3V or 5V components
• Available in SSOP and TSSOP packages
The FCT163827 20-bit buffer is built using advanced dual metal CMOS
technology. These 20-bit bus drivers provide high-performance bus
interface buffering for wide data/address paths or busses carrying parity.
Two pairs of NAND-ed output enable controls offer maximum control
flexibility and are organized to operate the device as two 10-bit buffers or
one 20-bit buffer. Flow-through organization of signal pins simplifies layout.
All inputs are designed with hysteresis for improved noise margin.
The FCT163827 has series current limiting resistors. This offers low
ground bounce, minimal undershoot, and controlled output fall times,
reducing the need for external series terminating resistors.
The inputs of the FCT163827 can be driven from either 3.3V or 5V
devices. This feature allows the use of these devices as translators in a
mixed 3.3V/5V supply system.
FUNCTIONAL BLOCK DIAGRAM
1OE1
1
28
2OE1
56
1OE2
29
2OE2
55
2
1A 1
1Y 1
2A 1
TO NINE OTHER CHANNELS
42
15
2Y 1
TO NINE OTHER CHANNELS
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
INDUSTRIAL TEMPERATURE RANGE
MAY 2002
1
© 2002 Integrated Device Technology, Inc.
DSC-3083/6
IDT74FCT163827A/C
3.3V CMOS 20-BIT BUFFER
INDUSTRIAL TEMPERATURE RANGE
PIN CONFIGURATION
1OE1
ABSOLUTE MAXIMUM RATINGS(1)
56
1
55
1OE2
Symbol
Description
Max
Unit
VTERM(2)
Terminal Voltage with Respect to GND
–0.5 to +4.6
V
VTERM(3)
Terminal Voltage with Respect to GND
–0.5 to 7
V
VTERM(4)
Terminal Voltage with Respect to GND
–0.5 to VCC+0.5
V
TSTG
Storage Temperature
–65 to +150
°C
IOUT
DC Output Current
–60 to +60
mA
1Y1
2
1Y2
3
54
1A2
GND
4
53
GND
1Y3
5
52
1A3
1Y4
6
51
1A4
VCC
7
50
VCC
1Y5
8
49
1A5
1Y6
9
48
1A6
1Y7
10
47
1A7
GND
11
46
GND
1Y8
12
45
1A8
1Y9
13
44
1A9
Symbol
Conditions
Typ.
Max.
Unit
CIN
Input Capacitance
VIN = 0V
3.5
6
pF
COUT
Output Capacitance
VOUT = 0V
3.5
8
pF
1A1
1Y10
14
43
1A10
2Y1
15
42
2A1
2Y2
16
41
2A 2
2Y3
17
40
2A3
GND
18
39
GND
2Y4
19
38
2A4
2Y5
20
37
2A5
2Y6
21
36
2A6
VCC
22
35
VCC
2Y7
23
34
2A7
2Y8
24
33
2A8
GND
25
32
GND
2Y9
26
31
2A9
2Y10
27
30
2A10
2OE1
28
29
2OE2
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
2. Vcc terminals.
3. Input terminals.
4. Outputs and I/O terminals.
CAPACITANCE (TA = +25°C, F = 1.0MHz)
Parameter(1)
NOTE:
1. This parameter is measured at characterization but not tested.
PIN DESCRIPTION
Pin Names
xOEx
Description
Output Enable Inputs (Active LOW)
xAx
Data Inputs
xYx
3-State Outputs
FUNCTION TABLE(1)
Inputs
SSOP/ TSSOP
TOP VIEW
xOE1
xOE2
xAx
xYx
L
L
L
L
L
L
H
H
H
X
X
Z
X
H
X
Z
NOTE:
1. H = HIGH Voltage Level
L = LOW Voltage Level
X = Don't Care
Z = High-impedance
2
Outputs
IDT74FCT163827A/C
3.3V CMOS 20-BIT BUFFER
INDUSTRIAL TEMPERATURE RANGE
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified:
Industrial: TA = –40°C to +85°C, VCC = 2.7V to 3.6V
Symbol
VIH
Parameter
Min.
Typ.(2)
Max.
Unit
2
—
5.5
V
2
—
VCC+0.5
–0.5
—
0.8
VI = 5.5V
—
—
±1
Input HIGH Current (I/O pins)
VI = VCC
—
—
±1
Input LOW Current (Input pins)
VI = GND
—
—
±1
Input LOW Current (I/O pins)
VI = GND
—
—
±1
VO = VCC
—
—
±1
VO = GND
—
—
±1
—
–0.7
–1.2
V
–36
–60
–110
mA
mA
Input HIGH Level (Input pins)
Test Conditions(1)
Guaranteed Logic HIGH Level
Input HIGH Level (I/O pins)
VIL
Input LOW Level (Input and I/O pins) Guaranteed Logic LOW Level
IIH
Input HIGH Current (Input pins)
IIL
VCC = Max.
IOZH
High Impedance Output Current
IOZL
(3-State Output pins)
VIK
Clamp Diode Voltage
VCC = Min., IIN = –18mA
IODH
Output HIGH Current
VCC = 3.3V, VIN = VIH or VIL, VO = 1.5V
(3)
IODL
Output LOW Current
VCC = 3.3V, VIN = VIH or VIL, VO = 1.5V
(3)
VOH
Output HIGH Voltage
VCC = Min.
IOH = –0.1mA
VIN = VIH or VIL
VCC = 3V
VCC = Max.
V
µA
µA
50
90
200
VCC-0.2
—
—
IOH = –3mA
2.4
3
—
IOH = –8mA
2.4
3
—
VCC = Min.
IOL = 0.1mA
—
—
0.2
VIN = VIH or VIL
IOL = 16mA
—
0.2
0.4
IOL = 24mA
—
0.3
0.55
IOL = 24mA
—
0.3
0.5
–60
–135
–240
mA
—
150
—
mV
—
0.1
10
µA
(5)
V
VIN = VIH or VIL
VOL
Output LOW Voltage
VCC = 3V
V
VIN = VIH or VIL
IOS
Short Circuit Current
VH
Input Hysteresis
ICCL
ICCH
ICCZ
Quiescent Power Supply Current
(4)
VCC = Max., VO = GND(3)
—
VCC = Max.
VIN = GND or VCC
NOTES:
1. For conditions shown as Min. or Max., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at VCC = 3.3V, +25°C ambient.
3. Not more than one output should be shorted at one time. Duration of the test should not exceed one second.
4. This parameter is guaranteed but not tested.
5. VOH = VCC–0.6V at rated current.
3
IDT74FCT163827A/C
3.3V CMOS 20-BIT BUFFER
INDUSTRIAL TEMPERATURE RANGE
POWER SUPPLY CHARACTERISTICS
Test Conditions(1)
Min.
Typ.(2)
Max.
Unit
—
2
30
µA
VIN = VCC
VIN = GND
—
50
75
µA/
MHz
VCC = Max.,Outputs Open
fI = 10MHz
50% Duty Cycle
VIN = VCC
VIN = GND
—
0.5
0.7
mA
xOE1 = xOE2 = GND
One Bit Toggling
VIN = VCC - 0.6V
VIN = GND
—
0.5
0.8
VCC = Max.,Outputs Open
VIN = VCC
—
2.5
3.7(5)
fI = 2.5MHz
50% Duty Cycle
VIN = GND
xOE1 = xOE2 = GND
VIN = VCC - 0.6V
—
2.5
4.1(5)
Twenty Bits Toggling
VIN = GND
Symbol
Parameter
∆ICC
Quiescent Power Supply Current
TTL Inputs HIGH
VCC = Max.
VIN = VCC - 0.6V(3)
ICCD
Dynamic Power Supply
Current(4)
VCC = Max.
Outputs Open
xOE1 = xOE2 = GND
One Input Togging
50% Duty Cycle
Total Power Supply Current(6)
IC
NOTES:
1. For conditions shown as Min. or Max., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at VCC = 3.3V, +25°C ambient.
3. Per TTL driven input. All other inputs at VCC or GND.
4. This parameter is not directly testable, but is derived for use in Total Power Supply Calculations.
5. Values for these conditions are examples of the ICC formula. These limits are guaranteed but not tested.
6. IC = IQUIESCENT + IINPUTS + IDYNAMIC
IC = ICC + ∆ICC DHNT + ICCD (fCPNCP/2 + fiNi)
ICC = Quiescent Current (ICCL, ICCH and ICCZ)
∆ICC = Power Supply Current for a TTL High Input
DH = Duty Cycle for TTL Inputs High
NT = Number of TTL Inputs at DH
ICCD = Dynamic Current caused by an Input Transition Pair (HLH or LHL)
fCP = Clock Frequency for Register Devices (Zero for Non-Register Devices)
NCP = Number of Clock Inputs at fCP
fi = Input Frequency
Ni = Number of Inputs at fi
4
IDT74FCT163827A/C
3.3V CMOS 20-BIT BUFFER
INDUSTRIAL TEMPERATURE RANGE
SWITCHING CHARACTERISTICS OVER OPERATING RANGE(1)
Symbol
Parameter
Condition(2)
tPLH
tPHL
Propagation Delay
xAx to xYx
CL = 50pF
RL = 500Ω
CL = 300pF(4)
RL = 500Ω
CL = 50pF
RL = 500Ω
CL = 300pF(4)
RL = 500Ω
CL = 5pF(4)
RL = 500Ω
CL = 50pF
RL = 500Ω
tPZH
tPZL
tPHZ
tPLZ
tSK(o)
Output Enable Time
xOEx to xYx
Output Disable Time
xOEx to xYx
FCT163827A
Min.(3)
Max.
FCT163827C
Min.(3)
Max.
1.5
8
1.5
4.4
1.5
15
1.5
10
1.5
12
1.5
7
1.5
23
1.5
14
1.5
9
1.5
5.7
1.5
10
1.5
6
—
0.5
—
0.5
Unit
ns
ns
ns
Output Skew(3)
ns
NOTES:
1. See test circuit and waveforms.
2. Minimum limits are guaranteed but not tested on Propagation Delays.
3. Skew between any two outputs, of the same package, switching in the same direction. This parameter is guaranteed by design.
4. Propagation Delays and Enable/Disable times are with VCC = 3.3V ±0.3V, Normal Range. For VCC = 2.7V to 3.6V, Extended Range, all Propagation Delays and Enable/Disable
times should be degraded by 20%.
5
IDT74FCT163827A/C
3.3V CMOS 20-BIT BUFFER
INDUSTRIAL TEMPERATURE RANGE
TEST CIRCUITS AND WAVEFORMS
SWITCH POSITION
6v
Open
V CC
500Ω
GND
V OUT
VIN
Pulse
Generator
D.U.T.
50pF
RT
500Ω
Test
Switch
Open Drain
Disable Low
Enable Low
6V
Disable High
Enable High
GND
All Other Tests
Open
DEFINITIONS:
CL = Load capacitance: includes jig and probe capacitance.
RT = Termination resistance: should be equal to ZOUT of the Pulse Generator.
CL
Test Circuits for All Outputs
DATA
INPUT
tH
tSU
TIMING
INPUT
ASYNCHRONOUS CONTROL
PRESET
CLEAR
ETC.
SYNCHRONOUS CONTROL
PRESET
CLEAR
CLOCK ENABLE
ETC.
tREM
tSU
3V
1.5V
0V
3V
1.5V
0V
LOW-HIGH-LOW
PULSE
1.5V
tW
3V
1.5V
0V
HIGH-LOW-HIGH
PULSE
1.5V
3V
1.5V
0V
tH
Pulse Width
Set-up, Hold, and Release Times
ENABLE
SAME PHASE
INPUT TRANSITION
tPLH
tPHL
OUTPUT
tPLH
OPPOSITE PHASE
INPUT TRANSITION
tPHL
3V
1.5V
0V
DISABLE
3V
1.5V
CONTROL
INPUT
tPZL
VOH
1.5V
VOL
OUTPUT
NORMALLY
LOW
3V
1.5V
0V
OUTPUT
NORMALLY
HIGH
Propagation Delay
SWITCH
6V
tPZH
SWITCH
GND
0V
tPLZ
3V
3V
1.5V
0.3V
VOL
tPHZ
0.3V
VOH
1.5V
0V
0V
Enable and Disable Times
NOTES:
1. Diagram shown for input Control Enable-LOW and input Control Disable-HIGH.
2. Pulse Generator for All Pulses: Rate ≤ 1.0MHz; tF ≤ 2.5ns; tR ≤ 2.5ns.
3. if VCC is below 3V, input voltage swings should be adjusted not to exceed VCC.
6
IDT74FCT163827A/C
3.3V CMOS 20-BIT BUFFER
INDUSTRIAL TEMPERATURE RANGE
ORDERING INFORMATION
IDT
FCT XXX
XX
Family
Temp. Range
XXXX
X
Device Type Package
PV
PA
Shrink Small Outline Package
Thin Shrink Small Outline Package
827A
827C
Non-Inverting 20-Bit Buffer
163
Double-Density 3.3Volt
74
− 40°C to +85°C
DATA SHEET DOCUMENT HISTORY
4/19/2002
Removed B speed grade
5/21/2002
Removed TVSOP package
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