MBRS20H100CT - MBRS20H200CT Taiwan Semiconductor CREAT BY ART 20A, 100V - 200V Dual Common Cathode Schottky Rectifiers FEATURES - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA 2 TO-263AB (D PAK) Case: TO-263AB (D2PAK) Molding compound, UL flammability classification rating 94V-0 Moisture sensitivity level: level 1, per J-STD-020 Part no. with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.4 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER SYMBOL MBRS MBRS MBRS 20H100CT 20H150CT 20H200CT Unit Maximum repetitive peak reverse voltage VRRM 100 150 200 V Maximum RMS voltage VRMS 70 105 140 V Maximum DC blocking voltage VDC 100 150 200 V Maximum average forward rectified current IF(AV) 20 A Peak repetitive forward current (Rated VR, Square wave, 20KHz) IFRM 20 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 150 A Peak repetitive reverse surge current (Note 1) IRRM Maximum instantaneous forward voltage (Note 2) IF=10A, TJ=25°C IF=10A, TJ=125°C IF=20A, TJ=25°C IF=20A, TJ=125°C Maximum reverse current @ rated VR TJ=25°C TJ=125°C VF 1 0.5 0.85 0.88 0.75 0.75 0.95 0.97 0.85 IR A V 0.85 5 μA 2 mA Voltage rate of change (Rated VR) dV/dt 10000 V/μs Typical thermal resistance RθJC 1.5 °C/W TJ - 55 to +175 °C - 55 to +175 O Operating junction temperature range Storage temperature range TSTG C Note 1: tp = 2.0 μs, 1.0KHz Note 2: Pulse test with PW=300μs, 1% duty cycle Document Number: DS_D1309041 Version: I15 MBRS20H100CT - MBRS20H200CT Taiwan Semiconductor ORDERING INFORMATION PART NO. PART NO. PACKING CODE SUFFIX MBRS20HxxxCT (Note 1) PACKING CODE SUFFIX RN H PACKAGE 800 / 13" Paper reel D2PAK G MN PACKING (*) 800 / 13" Plastic reel Note 1: "xx" defines voltage from 100V (MBRS20H100CT) to 200V (MBRS20H200CT) *: Optional available EXAMPLE PREFERRED P/N PART NO. MBRS20H100CTHRNG MBRS20H100CT PART NO. SUFFIX PACKING CODE PACKING CODE H SUFFIX RN DESCRIPTION AEC-Q101 qualified Green compound G RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted) FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG 25 20 15 10 RESISTIVE OR INDUCTIVE LOAD WITH HEATSINK 5 0 0 25 50 75 100 125 150 175 200 PEAK FORWARD SURGE CURRENT (A) AVERAGE FORWARD CURRENT (A) FIG.1 FORWARD CURRENT DERATING CURVE 180 8.3ms Single Half Sine Wave 150 120 90 60 30 0 1 10 CASE TEMPERATURE (oC) FIG. 3 TYPICAL FORWARD CHARACTERISTICS PER LEG FIG. 4 TYPICAL REVERSE CHARACTERISTICS PER LEG INSTANTANEOUS REVERSE CURRENT (mA) INSTANTANEOUS FORWARD CURRENT (A) 100 10 TJ=125°C TJ=25°C 1 PULSE WIDTH=300μs 1% DUTY CYCLE 0.1 0 0.2 0.4 0.6 0.8 1 FORWARD VOLTAGE (V) Document Number: DS_D1309041 1.2 100 NUMBER OF CYCLES AT 60 Hz 1.4 1.6 10 TJ=125°C 1 TJ=75°C 0.1 0.01 TJ=25°C 0.001 0.0001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Version: I15 MBRS20H100CT - MBRS20H200CT Taiwan Semiconductor FIG. 5 TYPICAL JUNCTION CAPACITANCE FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE 100 PER LEG f=1.0MHz Vsig=50mVp-p TRANSIENT THERMAL IMPEDANCE (°C/W) JUNCTION CAPACITANCE (pF) A 10000 1000 10 1 0.1 100 0.1 1 10 100 0.01 0.1 1 10 100 T-PULSE DURATION(s) REVERSE VOLTAGE (V) PACKAGE OUTLINE DIMENSIONS TO-263AB (D2PAK) DIM. Unit (mm) Unit (inch) Min Max Min Max A - 10.5 - 0.413 B 14.60 15.88 0.575 0.625 C 2.41 2.67 0.095 0.105 D 0.68 0.94 0.027 0.037 E 2.29 2.79 0.090 0.110 F 4.44 4.70 0.175 0.185 G 1.14 1.40 0.045 0.055 H 1.14 1.40 0.045 0.055 I 8.25 9.25 0.325 0.364 J 0.36 0.53 0.014 0.021 K 2.03 2.79 0.080 0.110 SUGGESTED PAD LAYOUT Symbol Unit (mm) Unit (inch) A 10.8 0.425 B 8.3 0.327 C 1.1 0.043 D 3.5 0.138 E 16.9 0.665 F 9.5 0.374 G 2.5 0.098 MARKING DIAGRAM P/N = Specific Device Code G = Green Compound YWW = Date Code F = Factory Code Document Number: DS_D1309041 Version: I15 MBRS20H100CT - MBRS20H200CT Taiwan Semiconductor CREAT BY ART Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_D1309041 Version: I15