MBRF20H100CT – MBRF20H200CT Pb RoHS Isolated 20.0 AMPS. Schottky Barrier Rectifiers ITO-220AB COMPLIANCE Features Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Guardring for overvoltage protection High temperature soldering guaranteed: 260oC/10 seconds,0.25”(6.35mm)from case TYP TYP Mechanical Data Cases: ITO-220AB molded plastic Terminals: Pure tin plated, lead free. solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting position: Any Mounting torque: 5 in. - lbs. max Weight: 0.08 ounce, 2.24 grams YWW MBRF20HXXXCT MBRF20HXXXCT = Specific Device Code = Year = Work Week Y WW Maximum Ratings and Electrical Characteristics o Rating at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% MBRF Type Number Symbol 20H100CT Maximum Recurrent Peak Reverse Voltage VRRM 100 Maximum RMS Voltage VRMS 70 Maximum DC Blocking Voltage VDC 100 Maximum Average Forward Rectified o Current at TC=133 C Peak Repetitive Forward Current (Rated VR, o Square Wave, 20KHz) at Tc=133 C Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Peak Repetitive Reverse Surge Current (Note 1) Maximum Instantaneous Forward Voltage at o (Note 2) IF= 10A, Tc=25 C o IF= 10A, Tc=125 C o IF=20A, Tc=25 C o IF=20A, Tc=125 C Maximum Instantaneous Reverse Current o at Rated DC Blocking Voltage @Tc=25 C o @ Tc=125 C Voltage Rate of Change, (Rated VR) RMS Isolation Voltage (t=1.0 second, R.H. o ≦30%, TA=25 C) (Note 4) (Note 5) (Note 6) Typical Thermal Resistance Per Leg (Note3) MBRF 20H150CT 150 105 150 MBRF 20H200CT 200 140 200 Units V V V I(AV) 20 A IFRM 20 A IFSM 150 A IRRM VF 1.0 0.5 A 0.88 0.75 0.97 0.85 0.85 0.75 0.95 0.85 V IR 5.0 2.0 uA mA dV/dt 10,000 V/uS VISO RθJC 4500 3500 1500 3.5 V o C/W o Operating Junction Temperature Range TJ -65 to +175 C o Storage Temperature Range TSTG -65 to +175 C Notes: 1. 2.0 us Pulse Width, f=1.0 KHz 2. Pulse Test: 300us Pulse Width, 1% Duty Cycle 3. Thermal Resistance from Junction to Case Per Leg. 4. Clip Mounting (on case), where lead does not overlap heatsink with 0.110” offset. 5. Clip mounting (on case), where leads do overlap heatsink. 6. Screw mounting with 4-40 screw, where washer diameter is ≦4.9 mm (0.19”) Version: C09 RATINGS AND CHARACTERISTIC CURVES(MBRF20H100CT - MBRF20H200CT) FIG.1- FORWARD CURRENT DERATING CURVE FIG.2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG 150 PEAK FORWARD SURGE CURRENT. (A) 20 AVERAGE FORWARD CURRENT. (A) RESISTIVE OR INDUCTIVE LOAD 16 12 8 4 0 Tj=Tj max. 8.3ms Single Half Sine Wave JEDEC Method 125 100 75 50 25 0 0 25 75 50 100 150 125 1 175 10 o CASE TEMPERATURE. ( C) FIG.3- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS PER LEG 5 40 FIG.4- TYPICAL REVERSE CHARACTERISTICS PER LEG 1 INSTANTANEOUS REVERSE CURRENT. (mA) 10 INSTANTANEOUS FORWARD CURRENT. (A) 100 NUMBER OF CYCLES AT 60Hz Tj=125 0C Tj=25 0C 1 0.1 Tj=125 0C 0.1 Tj=75 0C 0.01 0.001 Tj=25 0C Pulse Width=300 s 1% Duty Cycle 0.01 0 0.0001 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 TRANSIENT THERMAL IMPEDANCE. ( OC/W) JUNCTION CAPACITANCE.(pF) Tj=25 0C f=1.0MHz Vsig=50mVp-p 2,000 1,000 500 200 100 1.0 40 60 80 100 120 140 FIG.6- TYPICAL TRANSIENT THERMAL IMPEDANCE PER LEG FIG.5- TYPICAL JUNCTION CAPACITANCE PER LEG 5,000 0.1 20 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) FORWARD VOLTAGE. (V) 10 REVERSE VOLTAGE. (V) 100 100 10.0 1 0.1 0.01 0.1 1 10 T, PULSE DURATION. (sec) Version: C09 100