TSD10H100CW - TSD10H200CW Taiwan Semiconductor 10A, 100V - 200V Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ high efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC TO-263AB (D2PAK) - Halogen-free according to IEC 61249-2-21 TYPICAL APPLICATIONS Trench Schottky barrier rectifier is designed for high frequency switched mode power supplies such as adapters, lighting, and DC/DC converters. MECHANICAL DATA Case: TO-263AB (D2PAK) Molding compound meets UL 94 V-0 flammability rating Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Polarity: As marked Weight: 1.6 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL per device per diode Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load per diode Voltage rate of change (Rated VR) Instantaneous forward voltage per diode (Note1) IF = 5A TJ = 25°C IF = 5A TJ = 125°C Instantaneous reverse current per diode at rated reverse voltage TSD10H TSD10H TSD10H 100CW 120CW 150CW 200CW 100 120 150 200 VRRM Maximum repetitive peak reverse voltage Maximum average forward rectified current TSD10H TJ = 25°C TJ = 125°C V 10 IF(AV) UNIT A 5 IFSM 100 A dV/dt 10000 V/μs VF IR TYP MAX TYP MAX TYP MAX TYP MAX 0.62 0.70 0.69 0.79 0.78 0.88 0.81 0.91 0.55 0.63 0.58 0.66 0.64 0.72 0.67 0.75 - 100 - 100 - 100 - 100 μA - 15 - 15 1.5 10 1.5 10 mA V Typical thermal resistance per diode RθJC 3.2 °C/W Operating junction temperature range TJ - 55 to +150 °C TSTG - 55 to +150 °C Storage temperature range Note 1: Pulse test with pulse width=300μs, 1% duty cycle Document Number: DS_D0000002 Version: A15 TSD10H100CW - TSD10H200CW Taiwan Semiconductor ORDERING INFORMATION PART NO. PACKING CODE TSD10HXXXCW (Note 1) C0 PACKING CODE SUFFIX PACKAGE PACKING D2PAK 50 / Tube G Note 1: "XXX" defines voltage from 100V (TSD10H100CW) to 200V (TSD10H200CW) EXAMPLE PREFERRED PART NO. PART NO. TSD10H150CW C0G TSD10H150CW PACKING PACKING CODE CODE SUFFIX C0 G DESCRIPTION Green compound RATINGS AND CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) FIG. 2 TYPICAL FORWARD CHARACTERISTICS FIG. 1 FORWARD CURRENT DERATING CURVE 100 INSTANTANEOUS FORWARD CURRENT (A) AVERAGE FORWARD CURRENT (A) 12 10 8 6 4 WITH HEATSINK 3in x 5in x 0.25in Al-Plate 2 0 TSD10H100CW 10 TJ=150oC TJ=125oC 1 TJ=100oC 0.1 TJ=25oC 0.01 0 25 50 75 100 CASE TEMPERATURE 125 150 0.0 0.4 0.6 0.8 1.0 FORWARD VOLTAGE (V) FIG. 3 TYPICAL FORWARD CHARACTERISTICS FIG. 4 TYPICAL FORWARD CHARACTERISTICS 100 100 TSD10H120CW 10 INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS FORWARD CURRENT (A) 0.2 (oC) TJ=150oC 1 TJ=125oC TJ=100oC 0.1 TJ =25oC 0.01 TSD10H150CW 10 TJ=150oC 1 TJ=125oC TJ=100oC 0.1 TJ=25oC 0.01 0 0.2 0.4 0.6 FORWARD VOLTAGE (V) Document Number: DS_D0000002 0.8 1 0 0.2 0.4 0.6 0.8 1 FORWARD VOLTAGE (V) Version: A15 TSD10H100CW - TSD10H200CW Taiwan Semiconductor FIG. 5 TYPICAL FORWARD CHARACTERISTICS FIG. 6 TYPICAL REVERSE CHARACTERISTICS 100 100 10 TJ 1 TSD10H100CW INSTANTANEOUS REVERSE CURRENT (mA) INSTANTANEOUS FORWARD CURRENT (A) TSD10H200CW =150oC TJ=125oC TJ=100oC 0.1 10 TJ=150oC 1 TJ=125oC TJ=100oC 0.1 0.01 0.001 TJ=25oC 0.0001 TJ=25oC 0.00001 0.01 0 0.2 0.4 0.6 0.8 10 1 40 50 60 70 80 90 100 FIG. 8 TYPICAL REVERSE CHARACTERISTICS FIG. 7 TYPICAL REVERSE CHARACTERISTICS 100 100 TSD10H120CW INSTANTANEOUS REVERSE CURRENT (mA) INSTANTANEOUS REVERSE CURRENT (mA) 30 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FORWARD VOLTAGE (V) 10 TJ=150oC 1 TJ 0.1 =125oC TJ=100oC 0.01 0.001 TJ=25oC 0.0001 0.00001 10 20 30 40 50 60 70 80 90 TSD10H150CW 10 1 TJ=150oC TJ=125oC 0.1 TJ=100oC 0.01 0.001 0.0001 TJ=25oC 0.00001 100 10 20 30 40 50 60 70 80 90 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG. 9 TYPICAL REVERSE CHARACTERISTICS FIG. 10 TYPICAL JUNCTION CAPACITANCE 100 10000 100 TSD10H200CW f=1.0MHz Vsig=50mVp-p 10 JUNCTION CAPACITANCE (pF) INSTANTANEOUS REVERSE CURRENT (mA) 20 1 TJ=150oC 0.1 TJ=125oC 0.01 TJ=100oC 0.001 TSD10H100CW TSD10H120CW 1000 100 TSD10H150CW 0.0001 TJ=25oC TSD10H200CW 0.00001 10 10 20 30 40 50 60 70 80 90 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Document Number: DS_D0000002 100 0.1 1 10 100 REVERSE VOLTAGE (V) Version: A15 TSD10H100CW - TSD10H200CW Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS TO-263AB (D2PAK) DIM. Unit (mm) Unit (inch) Min Max Min Max A 9.600 10.050 0.378 0.396 B 14.920 15.520 0.587 0.611 C 2.540 (TYP) D E 0.675 0.975 1.778 (TYP) 0.100 (TYP) 0.027 0.038 0.070 (TYP) F 4.390 4.790 0.173 0.189 G 1.150 1.450 0.045 0.057 H 1.600 (TYP) 0.063 (TYP) I 9.170 9.370 0.361 0.369 J 0.400 0.600 0.016 0.024 K L 0.254 (TYP) 1.150 1.550 0.010 (TYP) 0.045 0.061 MARKING DIAGRAM P/N = Specific Device Code G = Green Compound YWW = Date Code F = Factory Code Document Number: DS_D0000002 Version: A15 TSD10H100CW - TSD10H200CW Taiwan Semiconductor CREAT BY ART Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_D0000002 Version: A15