Datasheet - Taiwan Semi

TST30L60CW
Taiwan Semiconductor
30A, 60V Trench Schottky Rectifier
FEATURES
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Low power loss/ High efficiency
- High forward surge capability
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
TO-220AB
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier are designed for high frequency
miniature switched mode power supplies such as adapters, lighting
and on-board DC/DC converters.
MECHANICAL DATA
Case: TO-220AB
Molding compound meets UL 94 V-0 flammability rating
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity: As marked
Mounting torque: 0.56 Nm max.
Weight: 1.88 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
per device
Maximum average forward rectified
current
per diode
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load per diode
Voltage rate of change (Rated VR)
Instantaneous forward voltage per diode
(Note1)
IF = 15A
TJ = 25°C
IF = 15A
TJ = 125°C
Instantaneous reverse current per diode at rated
reverse voltage
TJ= 25°C
TJ = 125°C
SYMBOL
TST30L60CW
UNIT
VRRM
60
V
30
IF(AV)
A
15
IFSM
180
A
dV/dt
10000
V/μs
VF
IR
MIN.
TYP.
MAX.
-
0.53
0.60
-
0.49
0.56
-
-
500
μA
-
-
100
mA
V
Typical thermal resistance per diode
RθJL
2
°C/W
Operating junction temperature range
TJ
- 55 to +150
°C
TSTG
- 55 to +150
°C
Storage temperature range
Note 1: Pulse test with pulse width=300μs, 1% duty cycle
Document Number: DS_D0000072
Version: A15
TST30L60CW
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
PACKING CODE
TST30L60CW
C0
PACKING CODE
SUFFIX
G
PACKAGE
PACKING
TO-220AB
50 / Tube
EXAMPLE
PREFERRED
PART NO.
PACKING CODE
TST30L60CW
C0
PART NO.
TST30L60CW C0G
PACKING CODE
DESCRIPTION
SUFFIX
G
Green compound
RATINGS AND CHARACTERISTICS CURVES
(TA=25°C unless otherwise noted)
FIG. 2 TYPICAL FORWARD CHARACTERISTICS
FIG.1 FORWARD CURRENT DERATING CURVE
100
INSTANTANEOUS FORWARD CURRENT (A)
AVERAGE FORWARD CURRENT (A)
40
30
20
10
WITH HEATSINK
3in x 5in x 0.25in
Al-plate
0
0
25
50
75
100
125
10
TJ=150oC
TJ=125oC
1
TJ=100oC
0.1
TJ=25oC
0.01
150
0
0.1
0.2
CASE TEMPERATURE (oC)
0.4
0.5
0.6
0.7
0.8
FORWARD VOLTAGE (V)
FIG. 4 TYPICAL JUNCTION CAPACITANCE
FIG. 3 TYPICAL REVERSE CHARACTERISTICS
10000
100
TJ=150oC
10
TJ=125oC
1
CAPACITANCE (pF)
INSTANTANEOUS REVERSE CURRENT (mA)
0.3
TJ=100oC
0.1
0.01
1000
f=1.0MHz
Vsig=50mVp-p
TJ=25oC
100
0.001
10
20
30
40
50
60
70
80
90
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Document Number: DS_D0000072
100
0
1
10
100
REVERSE VOLTAGE (V)
Version: A15
TST30L60CW
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
TO-220AB
DIM.
Unit (mm)
Unit (inch)
Min
Max
Min
Max
A
-
10.50
-
0.413
B
2.62
3.44
0.103
0.135
C
2.80
4.20
0.110
0.165
D
0.68
0.94
0.027
0.037
E
3.54
4.00
0.139
0.157
F
14.60
16.00
0.575
0.630
G
13.19
14.79
0.519
0.582
H
I
2.41
4.42
2.67
4.76
0.095
0.174
0.105
0.187
J
1.14
1.40
0.045
0.055
K
5.84
6.86
0.230
0.270
L
2.20
2.80
0.087
0.110
M
0.35
0.64
0.014
0.025
MARKING DIAGRAM
P/N
= Specific Device Code
G
=Green Compound
YWW
= Date Code
F
= Factory Code
Document Number: DS_D0000072
Version: A15
TST30L60CW
Taiwan Semiconductor
CREAT BY ART
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
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merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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Document Number: DS_D0000072
Version: A15