TSD30H100CW - TSD30H200CW Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability 2 - Low forward voltage - Low power loss/ High efficiency - High forward surge capability 1 - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC 3 TO-263AB (D2PAK) - Halogen-free according to IEC 61249-2-21 definition TYPICAL APPLICATIONS Trench Schottky barrier rectifier are designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board DC/DC converters. MECHANICAL DATA Case: TO-263AB (D2PAK) Molding compound meets UL 94 V-0 flammability rating Packing code with suffix "G" menas green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Polarity: As marked Weight: 1.6 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL per device per diode Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode Voltage rate of change (Rated VR) Instantaneous forward voltage per diode (Note1) IF = 15A Instantaneous reverse current per diode at rated reverse voltage TSD30H TSD30H TSD30H 100CW 120CW 150CW 200CW 100 120 150 200 VRRM Maximum repetitive peak reverse voltage Maximum average forward rectified current TSD30H TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C V 30 IF(AV) UNIT A 15 IFSM 200 A dV/dt 10000 V/μs VF IR TYP MAX TYP MAX TYP MAX TYP MAX 0.69 0.78 0.75 0.84 0.81 0.90 0.84 0.92 0.61 0.68 0.64 0.73 0.68 0.77 0.70 0.79 - 250 - 250 - 150 - 150 μA 10 35 10 35 3 20 3 20 mA V Typical thermal resistance per diode RθJC 2.8 °C/W Operating junction temperature range TJ - 55 to +150 °C TSTG - 55 to +150 °C Storage temperature range Note 1: Pulse test with pulse width=300μs, 1% duty cycle Document Number: DS_D1411019 Version: B15 TSD30H100CW - TSD30H200CW Taiwan Semiconductor ORDER INFORMATION (EXAMPLE) TSD30H100CW C0G Green compound code Packing code Part no. RATINGS AND CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) FIG. 2 TYPICAL FORWARD CHARACTERISTICS FIG. 1 FORWARD CURRENT DERATING CURVE 100 TSD30H100CW TSD30H100CW TSD30H120CW 30 INSTANTANEOUS FORWARD CURRENT (A) AVERAGE FORWARD CURRENT (A) 35 25 TSD30H150CW TSD30H200CW 20 15 10 WITH HEATSINK 3in x 5in x 0.25in Al-Plate 5 TJ=150oC 10 TJ=125oC 1 TJ=100oC 0.1 TJ=25oC 0.01 0 0 25 50 75 100 125 0 150 0.2 0.4 0.8 1 FORWARD VOLTAGE (V) CASE TEMPERATURE (oC) FIG. 4 TYPICAL FORWARD CHARACTERISTICS FIG. 3 TYPICAL FORWARD CHARACTERISTICS 100 100 TSD30H120CW 10 TSD30H150CW INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS FORWARD CURRENT (A) 0.6 TJ=150oC TJ=125oC 1 TJ=100oC 0.1 TJ =25oC 0.01 10 TJ=150oC TJ=125oC 1 TJ=100oC 0.1 TJ=25oC 0.01 0 0.2 0.4 0.6 FORWARD VOLTAGE (V) Document Number: DS_D1411019 0.8 1 0 0.2 0.4 0.6 0.8 1 FORWARD VOLTAGE (V) Version: B15 TSD30H100CW - TSD30H200CW Taiwan Semiconductor FIG. 5 TYPICAL FORWARD CHARACTERISTICS FIG. 6 TYPICAL REVERSE CHARACTERISTICS 100 100 TSD30H100CW 10 TJ INSTANTANEOUS REVERSE CURRENT (mA) INSTANTANEOUS FORWARD CURRENT (A) TSD30H200CW =150oC TJ=125oC 1 TJ=100oC 0.1 10 TJ=150oC TJ=125oC 1 TJ=100oC 0.1 0.01 0.001 TJ=25oC 0.0001 TJ=25oC 0.00001 0.01 0 0.2 0.4 0.6 0.8 10 1 FORWARD VOLTAGE (V) FIG. 7 TYPICAL REVERSE CHARACTERISTICS 40 50 60 70 80 90 100 100 INSTANTANEOUS REVERSE CURRENT (mA) TSD30H120CW TST30H120CW INSTANTANEOUS REVERSE CURRENT (mA) 30 FIG. 8 TYPICAL REVERSE CHARACTERISTICS 100 10 TJ=150oC 1 TJ=125oC 0.1 TJ =100oC 0.01 0.001 TJ=25oC 0.0001 TSD30H150CW 10 1 TJ=150oC TJ=125oC 0.1 TJ=100oC 0.01 0.001 0.0001 TJ=25oC 0.00001 0.00001 10 20 30 40 50 60 70 80 90 10 100 20 30 40 50 60 70 80 90 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG. 9 TYPICAL REVERSE CHARACTERISTICS FIG. 10 TYPICAL JUNCTION CAPACITANCE 100 100 10000 TSD30H200CW f=1.0MHz Vsig=50mVp-p TSD30H100CW 10 1 JUNCTION CAPACITANCE (pF) INSTANTANEOUS REVERSE CURRENT (mA) 20 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) TJ=150oC TJ=125oC 0.1 TJ=100oC 0.01 0.001 1000 TSD30H120CW TSD30H200CW 100 0.0001 TSD30H150CW TJ =25oC 0.00001 10 10 20 30 40 50 60 70 80 90 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Document Number: DS_D1411019 100 0.1 1 10 100 REVERSE VOLTAGE (V) Version: B15 TSD30H100CW - TSD30H200CW Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS TO-263AB (D2PAK) DIM. Unit (mm) Unit (inch) Min Max Min Max A 9.600 10.050 0.378 0.396 B 14.920 15.520 0.587 0.611 C D E 2.540 (TYP) 0.675 0.975 1.778 (TYP) 0.100 (TYP) 0.027 0.038 0.070 (TYP) F 4.390 4.790 0.173 0.189 G 1.150 1.450 0.045 0.057 H 1.600 (TYP) 0.063 (TYP) I 9.170 9.370 0.361 0.369 J 0.400 0.600 0.016 0.024 K L 0.254 (TYP) 1.150 1.550 0.010 (TYP) 0.045 0.061 MARKING DIAGRAM P/N = Specific Device Code G = Green Compound YWW = Date Code F = Factory Code Document Number: DS_D1411019 Version: B15 TSD30H100CW - TSD30H200CW Taiwan Semiconductor CREAT BY ART Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_D1411019 Version: B15