TSD30H100CW SERIES_B15

TSD30H100CW - TSD30H200CW
Taiwan Semiconductor
Trench Schottky Rectifier
FEATURES
- Patented Trench Schottky technology
- Excellent high temperature stability
2
- Low forward voltage
- Low power loss/ High efficiency
- High forward surge capability
1
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
3
TO-263AB (D2PAK)
- Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier are designed for high frequency
miniature switched mode power supplies such as adapters,
lighting and on-board DC/DC converters.
MECHANICAL DATA
Case: TO-263AB (D2PAK)
Molding compound meets UL 94 V-0 flammability rating
Packing code with suffix "G" menas green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity: As marked
Weight: 1.6 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
per device
per diode
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load per diode
Voltage rate of change (Rated VR)
Instantaneous forward
voltage per diode (Note1)
IF = 15A
Instantaneous reverse current per
diode at rated reverse voltage
TSD30H
TSD30H
TSD30H
100CW
120CW
150CW
200CW
100
120
150
200
VRRM
Maximum repetitive peak reverse voltage
Maximum average
forward rectified current
TSD30H
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
V
30
IF(AV)
UNIT
A
15
IFSM
200
A
dV/dt
10000
V/μs
VF
IR
TYP
MAX
TYP
MAX
TYP
MAX
TYP
MAX
0.69
0.78
0.75
0.84
0.81
0.90
0.84
0.92
0.61
0.68
0.64
0.73
0.68
0.77
0.70
0.79
-
250
-
250
-
150
-
150
μA
10
35
10
35
3
20
3
20
mA
V
Typical thermal resistance per diode
RθJC
2.8
°C/W
Operating junction temperature range
TJ
- 55 to +150
°C
TSTG
- 55 to +150
°C
Storage temperature range
Note 1: Pulse test with pulse width=300μs, 1% duty cycle
Document Number: DS_D1411019
Version: B15
TSD30H100CW - TSD30H200CW
Taiwan Semiconductor
ORDER INFORMATION (EXAMPLE)
TSD30H100CW C0G
Green compound code
Packing code
Part no.
RATINGS AND CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
FIG. 2 TYPICAL FORWARD CHARACTERISTICS
FIG. 1 FORWARD CURRENT DERATING CURVE
100
TSD30H100CW
TSD30H100CW
TSD30H120CW
30
INSTANTANEOUS FORWARD CURRENT (A)
AVERAGE FORWARD CURRENT (A)
35
25
TSD30H150CW
TSD30H200CW
20
15
10
WITH HEATSINK
3in x 5in x 0.25in
Al-Plate
5
TJ=150oC
10
TJ=125oC
1
TJ=100oC
0.1
TJ=25oC
0.01
0
0
25
50
75
100
125
0
150
0.2
0.4
0.8
1
FORWARD VOLTAGE (V)
CASE TEMPERATURE (oC)
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
100
100
TSD30H120CW
10
TSD30H150CW
INSTANTANEOUS FORWARD CURRENT (A)
INSTANTANEOUS FORWARD CURRENT (A)
0.6
TJ=150oC
TJ=125oC
1
TJ=100oC
0.1
TJ
=25oC
0.01
10
TJ=150oC
TJ=125oC
1
TJ=100oC
0.1
TJ=25oC
0.01
0
0.2
0.4
0.6
FORWARD VOLTAGE (V)
Document Number: DS_D1411019
0.8
1
0
0.2
0.4
0.6
0.8
1
FORWARD VOLTAGE (V)
Version: B15
TSD30H100CW - TSD30H200CW
Taiwan Semiconductor
FIG. 5 TYPICAL FORWARD CHARACTERISTICS
FIG. 6 TYPICAL REVERSE CHARACTERISTICS
100
100
TSD30H100CW
10
TJ
INSTANTANEOUS REVERSE CURRENT
(mA)
INSTANTANEOUS FORWARD CURRENT
(A)
TSD30H200CW
=150oC
TJ=125oC
1
TJ=100oC
0.1
10
TJ=150oC
TJ=125oC
1
TJ=100oC
0.1
0.01
0.001
TJ=25oC
0.0001
TJ=25oC
0.00001
0.01
0
0.2
0.4
0.6
0.8
10
1
FORWARD VOLTAGE (V)
FIG. 7 TYPICAL REVERSE CHARACTERISTICS
40
50
60
70
80
90
100
100
INSTANTANEOUS REVERSE CURRENT (mA)
TSD30H120CW
TST30H120CW
INSTANTANEOUS REVERSE CURRENT (mA)
30
FIG. 8 TYPICAL REVERSE CHARACTERISTICS
100
10
TJ=150oC
1
TJ=125oC
0.1
TJ
=100oC
0.01
0.001
TJ=25oC
0.0001
TSD30H150CW
10
1
TJ=150oC
TJ=125oC
0.1
TJ=100oC
0.01
0.001
0.0001
TJ=25oC
0.00001
0.00001
10
20
30
40
50
60
70
80
90
10
100
20
30
40
50
60
70
80
90
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 9 TYPICAL REVERSE CHARACTERISTICS
FIG. 10 TYPICAL JUNCTION CAPACITANCE
100
100
10000
TSD30H200CW
f=1.0MHz
Vsig=50mVp-p
TSD30H100CW
10
1
JUNCTION CAPACITANCE (pF)
INSTANTANEOUS REVERSE CURRENT (mA)
20
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
TJ=150oC
TJ=125oC
0.1
TJ=100oC
0.01
0.001
1000
TSD30H120CW
TSD30H200CW
100
0.0001
TSD30H150CW
TJ
=25oC
0.00001
10
10
20
30
40
50
60
70
80
90
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Document Number: DS_D1411019
100
0.1
1
10
100
REVERSE VOLTAGE (V)
Version: B15
TSD30H100CW - TSD30H200CW
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
TO-263AB (D2PAK)
DIM.
Unit (mm)
Unit (inch)
Min
Max
Min
Max
A
9.600
10.050
0.378
0.396
B
14.920
15.520
0.587
0.611
C
D
E
2.540 (TYP)
0.675
0.975
1.778 (TYP)
0.100 (TYP)
0.027
0.038
0.070 (TYP)
F
4.390
4.790
0.173
0.189
G
1.150
1.450
0.045
0.057
H
1.600 (TYP)
0.063 (TYP)
I
9.170
9.370
0.361
0.369
J
0.400
0.600
0.016
0.024
K
L
0.254 (TYP)
1.150
1.550
0.010 (TYP)
0.045
0.061
MARKING DIAGRAM
P/N
= Specific Device Code
G
= Green Compound
YWW
= Date Code
F
= Factory Code
Document Number: DS_D1411019
Version: B15
TSD30H100CW - TSD30H200CW
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to any
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any damages resulting from such improper use or sale.
Document Number: DS_D1411019
Version: B15