TS19706CS Taiwan Semiconductor Single-Stage Flyback or Buck-Boost Current Control with Active PFC and Integrated High Voltage MOSFET DESCRIPTION FEATURES TS19706CS is a very efficient constant current ● Integrated 630V MOSFET controller IC for low cost non-dimmable LED lighting ● Constant Current Accuracy within <±3% applications. The TS19706CS is configurable for either ● Primary-Side Feedback Control isolated primary side Flyback regulation or non- ● Application Voltage Range 80 VAC ~ 308 VAC isolated ● Transition-Mode PFC Operation buck-boost current regulation topology. Integrated 630V Power MOSFET and active power ● Built-in Active Power Factor Correction factor correction in Flyback mode reduces the external ● Good Line and Load Regulation components required and BOM for implementation. ● Open-LED Protection on DMG pin The IC achieves high power factor correction and low ● Over-Voltage Protection on VCC pin total ● Short-LED Protection harmonic distortion (THD) with Boundary Conduction Mode (BCM) operation. Temperature ● Cycle-by-Cycle Over Current Protection on CS pin compensation of line/load regulation allows constant ● Over-Temperature Protection current ● Compliant to RoHS Directive 2011/65/EU and accuracy TS19706CS also to be maintained provides over to <±3%. temperature WEEE 2002/96/EC. protection, VCC overvoltage protection, and system ● Halogen-free according to IEC 61249-2-21. output open and short circuit protection. APPLICATION ● LED lighting ● Down lights, Tube lamps, PAR Lamps, Bulbs SOP-8 Pin Definition: 1. GND 8. CS 2. COM 7. NC 3. DMG 6. DRN 4. VCC 5. DRN Notes: MSL 3 (Moisture Sensitivity Level) per J-STD-020 TYPICAL APPLICATION CIRCUIT Flyback Converter Buck-Boost Converter 1 Version: A1605 TS19706CS Taiwan Semiconductor ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) (Note 1) PARAMETER SYMBOL LIMIT UNIT DRN Pin Voltage to GND VDRN 630 V Power supply pin VCC 40 V DMG voltage to GND VDMG -0.3 to 40 V VCS -0.3 to 5.5 V VCOM -0.3 to 5.5 V Junction Temperature Range TJ -40 to +150 °C Storage Temperature Range TSTG -65 to +150 °C PD 0.4 W ESD 2 kV SYMBOL LIMIT UNIT RӨJC 50 o 208 o CS voltage to GND COM voltage to GND Power Dissipation @TA=50 °C ESD Rating (Human Body Model) (Note 2) THERMAL PERFORMANCE (Note 3) PARAMETER Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient RӨJA C/W C/W RECOMMENDED OPERATING CONDITION (TA = 25°C unless otherwise specified) (Note 4) PARAMETER SYMBOL LIMIT UNIT DRN Pin Voltage to GND VDRN 600 V Power supply pin VCC 33 V DMG voltage to GND VDMG -0.3 to 10 V VCS -0.3 to 5 V VCOM -0.3 to 5 V Operating Junction Temperature Range TJ -40 to +125 °C Operating Ambient Temperature Range TOPA -40 to +85 °C CS voltage to GND COM voltage to GND ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL CONDITION MIN TYP MAX UNIT Supply Voltage Turn-on Voltage VCC_ON 14.3 15.3 16.3 V Turn-off Voltage VCC_OFF 7.3 7.8 8.3 V Quiescent Current 1 IQ1 VCC=12V, @ VCC off -- 25 37.5 µA Quiescent Current 2 IQ2 Start-up @ 4.5kHz -- 550 825 µA Operation Supply Current ICC -- 1.5 2.5 mA VCC voltage protection VOVPA 32.3 34 35.7 V Output voltage protection VOVPS 9.5 10 10.5 V CS limit voltage VOCP 1.2 1.35 1.5 V VOCP_STR -- 0.43 -- V VSCP -- 3.0 -- V Protection CS limit voltage (start-up) (Note 5) Short circuit protection 2 Version: A1605 TS19706CS Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL CONDITION MIN TYP MAX UNIT tSTR -- 222 -- µs Reference voltage VREF 362.6 370 377.4 mV Transconductance Gm -- 60 -- µA/V Sink Current ICOMP_SINK -- 20 -- µA Source Current ICOMP_SOU -- 20 -- µA Oscillator Start-up Timer GM Amplifier Driver VOH IO = 10mA -- 0.7 -- V VOL IO = -10mA -- 0.2 -- V Rising time tr VCC=20V, CO =1nF -- 60 -- ns Falling time tf VCC=20V, CO =1nF -- 80 -- ns VO_CLAMP -- 13 15.0 V LEBt -- 0.5 -- µs BVDS 630 -- -- V -- 3.2 3.8 Ω Dropout voltage Output clamp voltage (Note 5) Leading edge blanking time MOSFET Section Drain-Source Breakdown Voltage Drain-Source On-Resistance Thermal Section RDS(ON) VGS=10V, ID=1A (Note 5, 6) Thermal Shutdown -130 -°C Note: 1. Stresses listed as the above “Absolute Maximum Ratings” may cause permanent damage to the device. These are for stress ratings. Functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may remain possibility to affect device reliability. 2. Devices are ESD sensitive. Handling precautions recommended. 3. Thermal Resistance is specified with the component mounted on a low thermal conductivity test board in free air at TA=25°C. 4. The device is not guaranteed to function outside its operating conditions. 5. Guaranteed by design. 6. Linear degeneration Type. ORDERING INFORMATION PART NO. PACKAGE PACKING TS19706CS RLG SOP-8 2,500pcs / 13”Reel 3 Version: A1605 TS19706CS Taiwan Semiconductor FUNCTION BLOCK DRN CLR COM RST CT R SR Latch Q CLK Dr S VCC BG VREF PRO X SCP, OCP OVPA (VCC) OVPS (OUT) OSC One shot CLK SET_str SET_act TDIS GM DMG DMG S/H CS Multiply VREF CSP GND Block Diagram PIN DESCRIPTION PIN NO. NAME FUNCTION 1 GND 2 COM Output pin of error amplifier. 3 DMG Zero current demagnetization sensing. 4 VCC Power supply pin for all internal circuitry. 5 DRN Drain of the internal power MOSFET 6 DRN Drain of the internal power MOSFET 7 NC Not connected. 8 CS Input current sense pin Ground return for all internal circuitry. 4 Version: A1605 TS19706CS Taiwan Semiconductor CHARACTERISTICS CURVES Figure 1 - VCC_ON vs. Junction Temperature Figure 2 - VCC_OFF vs. Junction Temperature Figure 3 - VOVPA vs. Junction Temperature Figure 4 - VOVPS vs. Junction Temperature Figure 5 - VREF vs. Junction Temperature Figure 6 - VOCP vs. Junction Temperature 5 Version: A1605 TS19706CS Taiwan Semiconductor APPLICATION INFORMATION Function Description The TS19706CS is configurable for either isolated primary side Flyback regulation or non-isolated buck-boost current regulation topologies. The IC active power factor correction in Flyback mode and achieves constant current accuracy and low total harmonic distortion (THD) using Boundary Conduction Mode (BCM) operation. An integrated 630V switching MOSFET reduces the external components required for application implementation. The TS19706CS has built-in VCC over voltage protection, open LED protection, short LED protection, over temperature protection, and primary-side current limit. The average output current can be expressed as below. IOUT_avg = NP 0.370 * η × NS 2 × RS Where: • IOUT_avg is the average output current • NP is the primary-side turn ratio • NS is the secondary-side turn ratio • ƞ is the efficiency • RS is the sensing resistor connected between the MOSFET source and the GND Pin Definitions COM (Compensation) This is the output of the gm amplifier. Connect with a suitable RC network to ground. GND (Ground) GND is the reference node of internal circuit. CS (Current Sense) MOSFET current signal sensing for multiplication and current limit setting function. ICS(LIMIT) = 1.35 RS Where: • ICS(LIMIT) is the input current sence • RS is the sensing resistor connected between the MOSFET source and GND DRN (Drain) Internal Power MOSFET Drain. VCC Power supply for the controller during normal operation. The controller will start up when VCC reaches 15.3V (typical) and will shut-down when VCC voltage is below 7.8V (typical). A decoupling capacitor should be connected between the VCC and GND pin as close as possible. The TS19706CS performs VCC over voltage protection though VCC pin. Once VCC pin exceeds in 34V, TS19706CS turns off and latchs out the MOSFET switcher until VCC goes below VCC_OFF. 6 Version: A1605 TS19706CS Taiwan Semiconductor APPLICATION INFORMATION (CONTINUE) DMG (Zero Current Demegnetization) The output voltage is defined by the auxiliary winding (NAUX) of the fly-back transformer. The DMG pin senses output information to protect against undervoltage (VO < VO_STR) and overvoltage (VO > VO_OVP). When the DMG senses voltage under VO_STR the circuit will operate in short circuit protection mode, fSTR=1/tSTR. When the DMG senses voltage over VO_OVP, the circuit will implement over-voltage protection latch until VCC goes below VCC_OFF. VO_OVP = NSEC RD1 + RD2 × VOVPS × NAUX RD2 VO_STR = NSEC RD1 + RD2 ×3× NAUX RD2 Where : • VOUT_OVP is the output-over-voltage protection point • VOVPS is the over voltage protection signal • VO_STR is the start-up timer • NAUX is the number of auxiliary-winding turns NSEC is the number of secondary-winding turns • 7 Version: A1605 TS19706CS Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) SOP-8 SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code (1~9, A~Z) 8 Version: A1605 TS19706CS Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 9 Version: A1605