TSM4872_A09.pdf

TSM4872
30V N-Channel MOSFET
SOP-8
PRODUCT SUMMARY
VDS (V)
RDS(on)(mΩ)
Pin Definition:
1. Source
2. Source
3. Source
4. Gate
5, 6, 7, 8. Drain
30
ID (A)
7.5 @ VGS =10V
15
10 @ VGS 4.5V
13
Block Diagram
Advance Trench Process Technology
●
High Density Cell Design for Ultra Low On-resistance
de
●
d
Features
●
DC-DC Conversion
●
Battery Switch
en
Application
mm
Ordering Information
Part No.
Package
Packing
TSM4872CS RL
SOP-8
2.5Kpcs / 13” Reel
N-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
tR
Pulsed Drain Current
e co
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Continuous Source Current (Diode Conduction)
Limit
Unit
VDS
30
V
VGS
20
V
ID
15
A
IDM
50
A
IS
2.6
A
o
Ta = 25 C
PD
o
Ta = 75 C
No
Maximum Power Dissipation
a,b
Symbol
Operating Junction Temperature
W
2.0
+150
o
C
TJ, TSTG
- 55 to +150
o
C
Symbol
Limit
TJ
Operating Junction and Storage Temperature Range
3.1
Thermal Performance
Parameter
Junction to Case Thermal Resistance
RӨJF
Junction to Ambient Thermal Resistance (PCB mounted)
RӨJA
Unit
25
o
C/W
50
o
C/W
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 10 sec.
1/1
Version: A09
TSM4872
30V N-Channel MOSFET
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
VGS = 0V, ID = 250uA
BVDSS
30
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = 250µA
VGS(TH)
1
1.8
3
V
Gate Body Leakage
VGS = ±20V, VDS = 0V
IGSS
--
--
±100
nA
VDS = 24V, VGS = 0V
IDSS
--
--
1.0
µA
VDS ≥ 5V, VGS = 10V
ID(ON)
Drain-Source On-State Resistance
Forward Transconductance
a
a
Diode Forward Voltage
VGS = 4.5V, ID = 13A
Input Capacitance
Switching
c
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
7.5
--
8.3
10
mΩ
--
S
IS = 2.7A, VGS = 0V
VSD
--
0.72
1.1
V
Qg
--
26
--
Qgs
--
6
--
Qgd
--
5
--
Ciss
--
2134
--
Coss
--
343
--
Crss
--
134
--
td(on)
--
17
--
tr
--
3.5
--
td(off)
--
40
--
--
6
--
f = 1.0MHz
e co
Reverse Transfer Capacitance
6.2
42
VDS = 15V, VGS = 0V,
Output Capacitance
--
A
--
VGS = 5V
Gate-Drain Charge
--
gfs
VDS = 15V, ID = 15A,
Gate-Source Charge
--
VDS = 15V, ID = 15A
b
Total Gate Charge
RDS(ON)
mm
Dynamic
VGS = 10V, ID = 15A
40
de
On-State Drain Current
a
en
Zero Gate Voltage Drain Current
d
Drain-Source Breakdown Voltage
VDD = 15V, RL = 1.0Ω,
ID = 1A, VGEN = 10V,
pF
nS
No
tR
RG = 3Ω
Turn-Off Fall Time
tf
Notes:
a. pulse test: PW ≤300µS, duty cycle ≤2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
nC
2/2
Version: A09
TSM4872
30V N-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Transfer Characteristics
mm
en
de
d
Output Characteristics
Gate Charge
No
tR
e co
On-Resistance vs. Drain Current
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/3
Version: A09
TSM4872
30V N-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Threshold Voltage
mm
tR
e co
Single Pulse Power
en
de
d
On-Resistance vs. Gate-Source Voltage
No
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/4
Version: A09
TSM4872
30V N-Channel MOSFET
SOP-8 Mechanical Drawing
de
tR
Marking Diagram
e co
mm
en
A
B
C
D
F
G
K
M
P
R
d
DIM
SOP-8 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX.
4.80
5.00
0.189
0.196
3.80
4.00
0.150
0.157
1.35
1.75
0.054
0.068
0.35
0.49
0.014
0.019
0.40
1.25
0.016
0.049
1.27BSC
0.05BSC
0.10
0.25
0.004
0.009
0º
7º
0º
7º
5.80
6.20
0.229
0.244
0.25
0.50
0.010
0.019
No
Y = Year Code
M = Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
L = Lot Code
5/5
Version: A09
TSM4872
No
tR
e co
mm
en
de
d
30V N-Channel MOSFET
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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6/6
Version: A09