TSC TSM4426_10

TSM4426
20V N-Channel MOSFET
SOP-8
PRODUCT SUMMARY
VDS (V)
RDS(on)(mΩ)
Pin Definition:
1. Source
2. Source
3. Source
4. Gate
5, 6, 7, 8. Drain
20
Features
ID (A)
30 @ VGS = 4.5V
4.5
40 @ VGS = 2.5V
3.5
200 @ VGS = 1.8V
2.0
Block Diagram
●
Advance Trench Process Technology
●
High Density Cell Design for Ultra Low On-resistance
Application
●
Specially Designed for Li-on Battery Packs
●
Battery Switch Application
Ordering Information
Part No.
Package
Packing
TSM4426CS RL
SOP-8
2.5Kpcs / 13” Reel
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Symbol
Limit
Unit
Drain-Source Voltage
Parameter
VDS
20
V
Gate-Source Voltage
VGS
±12
V
ID
8
A
IDM
30 A
IS
2.2
A
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a,b
o
Maximum Power Dissipation
Ta = 25 C
PD
o
Ta = 75 C
Operating Junction Temperature
W
1.3
+150
o
C
TJ, TSTG
-55 to +150
o
C
Symbol
Limit
RӨJF
25
o
C/W
52.5
o
C/W
TJ
Operating Junction and Storage Temperature Range
2.5
Thermal Performance
Parameter
Thermal Resistance Junction to Foot
Thermal Resistance Junction to Ambient
RӨJA
Unit
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 5 sec.
1/1
Version: B09
TSM4426
20V N-Channel MOSFET
Electrical Specifications
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
BVDSS
20
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = 250uA
VGS(TH)
0.6
--
--
V
Gate Body Leakage
VGS = ±12V, VDS = 0V
IGSS
--
--
±100
nA
Zero Gate Voltage Drain Current
VDS = 20V, VGS = 0V
IDSS
--
--
1.0
uA
On-State Drain Current
VDS =5V, VGS = 4.5V
ID(ON)
30
--
--
A
--
20
30
--
28
40
--
80
200
VGS = 4.5V, ID = 4.5A
Drain-Source On-State Resistance
VGS = 2.5V, ID = 3.5A
RDS(ON)
VGS = 1.8V, ID = 2.0A
mΩ
Forward Transconductance
VDS = 10V, ID = 6A
gfs
--
30
--
S
Diode Forward Voltage
IS = 1.7A, VGS = 0V
VSD
--
0.7 1.2
V
Qg
Crss
-------
4.86
0.92
1.4
562
106
75
-------
td(on)
--
15
--
tr
--
65
--
td(off)
--
28.4
--
--
12
--
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
VDS = 10V, ID = 6A,
VGS = 4.5V
Qgs
Qgd
VDS = 8V, VGS = 0V,
f = 1.0MHz
Ciss
Coss
nC
pF
c
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
VDD = 10V, RL = 10Ω,
ID = 1A, VGEN = 4.5V,
RG = 6Ω
Turn-Off Fall Time
tf
Notes:
a. pulse test: PW ≤300µS, duty cycle ≤2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
2/2
nS
Version: B09
TSM4426
20V N-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/3
Version: B09
TSM4426
20V N-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/4
Version: B09
TSM4426
20V N-Channel MOSFET
SOP-8 Mechanical Drawing
DIM
A
B
C
D
F
G
K
M
P
R
SOP-8 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX.
4.80
5.00
0.189
0.196
3.80
4.00
0.150
0.157
1.35
1.75
0.054
0.068
0.35
0.49
0.014
0.019
0.40
1.25
0.016
0.049
1.27BSC
0.05BSC
0.10
0.25
0.004
0.009
0º
7º
0º
7º
5.80
6.20
0.229
0.244
0.25
0.50
0.010
0.019
Marking Diagram
Y = Year Code
M = Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
L = Lot Code
5/5
Version: B09
TSM4426
20V N-Channel MOSFET
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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6/6
Version: B09