TSC TSM4946D

TSM4946D
60V Dual N-Channel MOSFET
SOP-8
PRODUCT SUMMARY
VDS (V)
RDS(on)(mΩ)
Pin Definition:
1. Source 1
8. Drain 1
2. Gate 1
7. Drain 1
3. Source 2
6. Drain 2
4. Gate 2
5. Drain 2
60
Features
ID (A)
55 @ VGS = 10V
4.5
75 @ VGS = 4.5V
3.9
Block Diagram
●
Advance Trench Process Technology
●
High Density Cell Design for Ultra Low On-resistance
Application
●
High-Side DC/DC Conversion
●
Notebook
●
Sever
Ordering Information
Part No.
Package
Packing
TSM4946DCS RL
SOP-8
2.5Kpcs / 13” Reel
TSM4946DCS RLG
SOP-8
2.5Kpcs / 13” Reel
Dual N-Channel MOSFET
Note: “G” denote for Green Product
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
V
ID
4.5
A
IDM
30
A
IS
2
A
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a,b
o
Maximum Power Dissipation
Ta = 25 C
PD
o
Ta = 75 C
Operating Junction Temperature
Operating Junction and Storage Temperature Range
2.4
W
1.7
TJ
+150
o
C
TJ, TSTG
- 55 to +150
o
C
Symbol
Limit
Thermal Performance
Parameter
Junction to Case Thermal Resistance
RӨJF
Junction to Ambient Thermal Resistance (PCB mounted)
RӨJA
Unit
32
o
62.5
o
C/W
C/W
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 10 sec.
1/1
Version: A09
TSM4946D
60V Dual N-Channel MOSFET
Electrical Specifications
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
BVDSS
60
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = 250µA
VGS(TH)
1
--
3
V
Gate Body Leakage
VGS = ±20V, VDS = 0V
IGSS
--
--
±100
nA
VDS = 60V, VGS = 0V
IDSS
--
--
2
µA
VDS = 5V, VGS = 10V
ID(ON)
20
--
--
A
--
45
55
--
55
75
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
Forward Transconductance
a
Diode Forward Voltage
Dynamic
a
VGS = 10V, ID = 4.5A
VGS = 4.5V, ID = 3.9A
RDS(ON)
mΩ
VDS = 15V, ID = 4.5A
gfs
--
13
--
S
IS = 2A, VGS = 0V
VSD
--
0.9
1.2
V
Qg
--
19
30
Qgs
--
4
--
Qgd
--
3
--
Ciss
--
910
--
Coss
--
145
--
Crss
--
67
--
td(on)
--
13
20
tr
--
11
20
td(off)
--
36
60
--
11
20
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
VDS = 30V, ID = 4.5A,
VGS = 10V
VDS = 24V, VGS = 0V,
f = 1.0MHz
nC
pF
c
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
VDD = 30V, RL = 30Ω,
ID = 1A, VGEN = 10V,
RG = 6Ω
Turn-Off Fall Time
tf
Notes:
a. pulse test: PW ≤300µS, duty cycle ≤2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
2/2
nS
Version: A09
TSM4946D
60V Dual N-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/3
Version: A09
TSM4946D
60V Dual N-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/4
Version: A09
TSM4946D
60V Dual N-Channel MOSFET
SOP-8 Mechanical Drawing
DIM
A
B
C
D
F
G
K
M
P
R
SOP-8 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX.
4.80
5.00
0.189
0.196
3.80
4.00
0.150
0.157
1.35
1.75
0.054
0.068
0.35
0.49
0.014
0.019
0.40
1.25
0.016
0.049
1.27BSC
0.05BSC
0.10
0.25
0.004
0.009
0º
7º
0º
7º
5.80
6.20
0.229
0.244
0.25
0.50
0.010
0.019
Marking Diagram
Y = Year Code
M = Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
= Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug,
W=Sep, X=Oct, Y=Nov, Z=Dec)
L = Lot Code
5/5
Version: A09
TSM4946D
60V Dual N-Channel MOSFET
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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6/6
Version: A09