TSM2N7002K Taiwan Semiconductor N-Channel Power MOSFET 60V, 300mA, 2Ω FEATURES KEY PERFORMANCE PARAMETERS ● Low On-Resistance ● ESD Protected 2KV ● High Speed Switching ● Low Voltage Drive PARAMETER VALUE UNIT VDS 60 V RDS(on) (max) VGS = 10V 2 VGS = 4.5V 4 Qg Ω 0.4 nC APPLICATION ● ● Logic Level translators DC-DC Converter SOT-23 Notes: Moisture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current Pulsed Drain Current TA = 25°C (Note 1) ID TA = 100°C (Note 2) Total Power Dissipation @ TA = 25°C 300 180 mA IDM 800 mA PDTOT 300 mW Single Pulsed Avalanche Energy (Note 3) EAS 0.2 mJ Single Pulsed Avalanche Current (Note 3) IAS 2 A TJ, TSTG - 55 to +150 °C SYMBOL LIMIT UNIT RӨJA 350 °C/W Operating Junction and Storage Temperature Range THERMAL PERFORMANCE PARAMETER Junction to Ambient Thermal Resistance Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB in still air Document Number: DS_P0000068 1 Version: F15 TSM2N7002K Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Static CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 4) Drain-Source Breakdown Voltage VGS = 0V, ID = 10µA BVDSS 60 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 1.0 1.5 2.5 V Gate Body Leakage VGS =±20V, VDS =0V IGSS -- -- ±10 µA Zero Gate Voltage Drain Current VDS =60V, VGS =0V IDSS -- -- 1.0 µA -- 1.2 2 -- 2 4 Drain-Source On-State Resistance VGS =10V, ID =300mA VGS =4.5V, ID =200mA RDS(ON) mΩ Forward Transconductance VDS =10V, ID =200mA gfs 100 -- -- mS Diode Forward Voltage IS =300mA, VGS =0V VSD -- 0.8 1.4 V Qg -- 0.4 0.6 nC Ciss -- 30 -- Coss -- 6 -- Crss -- 2.5 -- Rg -- 70 -- Dynamic (Note 5) VDS =10V, ID = 250mA, Total Gate Charge VGS =4.5V Input Capacitance VDS = 25V, VGS = 0V, Output Capacitance Reverse Transfer Capacitance Gate Resistance Switching f = 1.0MHz F = 1MHz, open drain pF Ω (Note 6) Turn-On Delay Time VDD =30V, RG =10Ω td(on) -- 25 -- Turn-Off Delay Time ID =200mA, VGEN =10V, td(off) -- 35 -- Diode Forward Voltage IS =300mA, VGS =0V VSD -- 0.8 1.4 Reverse Recovery Time IS = 0.5A trr -- 40 -- ns Reverse Recovery Charge dIF/dt = 100A/µs Qrr -- 39 -- nC Source-Drain Diode ns (Note 4) Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature 3. L = 0.1mH, IAS = 2A, VDD = 25V, RG = 25Ω, Starting TJ = 25 C 4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2% 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. o Document Number: DS_P0000068 2 Version: F15 TSM2N7002K Taiwan Semiconductor ORDERING INFORMATION PART NO. TSM2N7002KCX RFG PACKAGE PACKING SOT-23 3,000pcs / 7” Reel Note: 1. Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC 2. Halogen-free according to IEC 61249-2-21 definition Document Number: DS_P0000068 3 Version: F15 TSM2N7002K Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage Document Number: DS_P0000068 4 Version: F15 TSM2N7002K Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient Document Number: DS_P0000068 5 Version: F15 TSM2N7002K Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) SOT-23 SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM 702 = TSM2N7002KCX Device Code X = Internal Code Document Number: DS_P0000068 6 Version: F15 TSM2N7002K Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_P0000068 7 Version: F15