TSM2N7002K 60V N-Channel MOSFET SOT-23 SOT-323 PRODUCT SUMMARY VDS (V) RDS(on)(Ω) Pin Definition: 1. Gate 2. Source 3. Drain 60 Features ● Low On-Resistance ● ESD Protected 2KV ● High Speed Switching ● Low Voltage Drive ID (mA) 2 @ VGS = 10V 300 4 @ VGS = 4.5V 200 Block Diagram Ordering Information Part No. Package Packing TSM2N7002KCX RF TSM2N7002KCX RFG TSM2N7002KCU RF TSM2N7002KCU RFG SOT-23 SOT-23 SOT-323 SOT-323 3Kpcs / 7” Reel 3Kpcs / 7” Reel 3Kpcs / 7” Reel 3Kpcs / 7” Reel N-Channel MOSFET Note: “G” denotes for Halogen Free Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous @ TA=25ºC ID 300 Pulsed IDM 800 Continuous @ TA=25ºC IDR 300 Pulsed IDMR 800 Maximum Power Dissipation PD 300 Operating Junction Temperature TJ +150 o TJ, TSTG -55 to +150 o Symbol Limit Unit TL 5 S RӨJA 350 Drain Current Drain Reverse Current Operating Junction and Storage Temperature Range mA mA mW C C Thermal Performance Parameter Lead Temperature (1/8” from case) Junction to Ambient Thermal Resistance (PCB mounted) o C/W Notes: a. Pulse width ≤300us, Duty cycle ≤2% b. When the device is mounted on a glass epoxy board with area measuring 1 x 0.75 x 0.62 inch. c. The power dissipation of the package may result in a continuous drain current. 1/7 Version: C11 TSM2N7002K 60V N-Channel MOSFET Electrical Specifications (Ta = 25oC, unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS =0V, ID =250µA BVDSS 60 -- -- V Gate Threshold Voltage VDS =VGS, ID =250µA VGS(TH) 1.0 1.5 2.5 V Gate Body Leakage VGS =±20V, VDS =0V IGSS -- -- ±10 uA Zero Gate Voltage Drain Current VDS =60V, VGS =0V IDSS -- -- 1.0 uA -- 1.2 2 -- 2 4 Drain-Source On-State Resistance VGS =10V, ID =300mA VGS =4.5V, ID =100mA RDS(ON) Ω Forward Transconductance VDS =10V, ID =200mA gfs 100 -- -- mS Diode Forward Voltage IS =300mA, VGS =0V VSD -- 0.8 1.4 V Qg -- 0.4 0.6 nC b Dynamic Total Gate Charge Input Capacitance VDS =10V, ID = 250mA, VGS =4.5V Ciss -- 30 -- Coss -- 6 -- Crss -- 2.5 -- td(on) -- -- 25 ID =200mA, VGEN =10V, Turn-Off Delay Time td(off) Notes: a. pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. -- -- 35 Output Capacitance Reverse Transfer Capacitance Switching VDS = 25V, VGS = 0V, f = 1.0MHz pF c Turn-On Delay Time VDD =30V, RG =10Ω 2/7 nS Version: C11 TSM2N7002K 60V N-Channel MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/7 Version: C11 TSM2N7002K 60V N-Channel MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient 4/7 Version: C11 TSM2N7002K 60V N-Channel MOSFET SOT-23 Mechanical Drawing DIM A A1 bp C D E e e1 HE LP Q V W SOT-23 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 1.00 BSC 0.039 BSC -0.10 -0.004 0.37 0.42 0.014 0.016 0.15 0.09 0.005 0.004 2.80 3.00 0.118 0.110 1.20 1.40 0.047 0.055 1.9 BSC 0.075 BSC 0.95 BSC 0.037 BSC 2.35 2.45 0.093 0.096 0.15 0.45 0.005 0.018 0.022 0.45 0.55 0.018 0.2 BSC 0.007 BSC 0.1 BSC 0.004 BSC Marking Diagram 5/7 Version: C11 TSM2N7002K 60V N-Channel MOSFET SOT-323 Mechanical Drawing DIM A A1 bp C D E e e1 HE Lp Q W SOT-323 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 0.80 1.10 0.031 0.043 -0.10 -0.004 0.30 0.40 0.012 0.016 0.10 0.25 0.004 0.010 1.80 2.20 0.071 0.087 1.15 1.35 0.045 0.053 1.30 BSC 0.051 BSC 0.65 BSC 0.026 BSC 2.00 2.20 0.079 0.087 0.15 0.45 0.006 0.018 0.20 BSC 0.007 BSC 0.20 BSC 0.007 BSC Marking Diagram 6/7 Version: C11 TSM2N7002K 60V N-Channel MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7/7 Version: C11