TSM3442 Taiwan Semiconductor N-Channel Power MOSFET 20V, 4A, 70mΩ FEATURES KEY PERFORMANCE PARAMETERS ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance APPLICATION Load Switch ● PA Switch VALUE UNIT VDS 20 V RDS(on) (max) VGS = 4.5V 70 VGS = 2.5V 90 Qg mΩ 5.4 nC d ● PARAMETER eco mm en de SOT-26 Notes: Moisture sensitivity level: level 3. Per J-STD-020 tR ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER No Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) SYMBOL LIMIT UNIT VDS 20 V VGS ±8 V TC = 25°C ID TC = 100°C (Note 2) 4 2.4 A IDM 8 A PDTOT 1.25 W TJ, TSTG - 55 to +150 °C SYMBOL LIMIT UNIT Junction to Case Thermal Resistance RӨJC 30 °C/W Junction to Ambient Thermal Resistance RӨJA 80 °C/W Total Power Dissipation @ TC = 25°C Operating Junction and Storage Temperature Range THERMAL PERFORMANCE PARAMETER Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB in still air , Document Number: DS_P0000076 1 Version: B15 TSM3442 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Static CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 3) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 20 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 0.65 0.95 1.2 V Gate Body Leakage VGS = ±8V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = 16V, VGS = 0V IDSS -- -- 1.0 µA -- 50 70 -- 60 90 Qg -- 5.4 -- Qgs -- 0.65 -- Qgd -- 1.4 -- Ciss -- 340 -- Coss -- 115 -- Crss -- 33 -- td(on) -- 12 -- tr -- 36 -- td(off) -- 34 -- tf -- 10 -- VSD -- 0.76 1.2 Drain-Source On-State Resistance VGS = 2.5V, ID = 3.5A mΩ (Note 4) Total Gate Charge VDS = 10V, ID = 4A, Gate-Source Charge d VGS = 4.5V Gate-Drain Charge Input Capacitance Reverse Transfer Capacitance (Note 5) mm Switching f = 1.0MHz Turn-On Delay Time VDD = 6V, RL = 10Ω, Turn-On Rise Time RG = 6Ω Turn-Off Fall Time (Note 3) tR Forward On Voltage eco ID = 1A, VGEN = 4.5V, Turn-Off Delay Time Source-Drain Diode en VDS = 10V, VGS = 0V, Output Capacitance IS = 1.6A, VGS = 0V nC pF ns V No Notes: RDS(ON) de Dynamic VGS = 4.5V, ID = 4A 1. Current limited by package 2. Pulse width limited by the maximum junction temperature 3. Pulse test: PW ≤ 300µs, duty cycle ≤ 2% 4. For DESIGN AID ONLY, not subject to production testing. 5. Switching time is essentially independent of operating temperature. Document Number: DS_P0000076 2 Version: B15 TSM3442 Taiwan Semiconductor ORDERING INFORMATION PART NO. TSM3442CX6 RFG PACKAGE PACKING SOT-26 3,000pcs / 7” Reel No tR eco mm en de d Note: 1. Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC 2. Halogen-free according to IEC 61249-2-21 definition Document Number: DS_P0000076 3 Version: B15 TSM3442 Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) Transfer Characteristics de d Output Characteristics On-Resistance vs. Drain Current No tR eco mm en Gate Charge On-Resistance vs. Junction Temperature Document Number: DS_P0000076 Source-Drain Diode Forward Voltage 4 Version: B15 TSM3442 Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) On-Resistance vs. Gate-Source Voltage de d Threshold Voltage No tR eco mm en Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient Document Number: DS_P0000076 5 Version: B15 TSM3442 Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) en tR eco mm SUGGESTED PAD LAYOUT (Unit: Millimeters) de d SOT-26 No MARKING DIAGRAM Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code (1~9, A~Z) Document Number: DS_P0000076 6 Version: B15 TSM3442 No tR eco mm en de d Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_P0000076 7 Version: B15