VS-VSKJS209/150 www.vishay.com Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 200 A FEATURES • 175 °C TJ operation • Low forward voltage drop • High frequency operation • Low thermal resistance • UL approved file E78996 • Designed and qualified for industrial level • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 ADD-A-PAK BENEFITS • Excellent thermal performances obtained by the usage of exposed direct bonded copper substrate PRODUCT SUMMARY IF(AV) 200 A VR 150 V Package ADD-A-PAK Circuit Two diodes common anode • High surge capability • Easy mounting on heatsink MECHANICAL DESCRIPTION The ADD-A-PAK generation VII, new generation of ADD-A-PAK module, combines the excellent thermal performances obtained by the usage of exposed direct bonded copper substrate, with advanced compact simple package solution and simplified internal structure with minimized number of interfaces. ELECTRICAL DESCRIPTION The VS-VSKJS209.. Schottky rectifier common anode has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in high current switching power supplies, plating power supplies, UPS systems, converters, freewheeling diodes, welding, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS Rectangular waveform VRRM IFSM tp = 5 μs sine VF 100 Apk, TJ = 125 °C TJ Range VALUES UNITS 200 A 150 V 11 300 A 0.85 V -55 to 175 °C VS-VSKJS209/150 UNITS 150 V VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage Revision: 19-Mar-14 SYMBOL VR VRWM Document Number: 93232 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKJS209/150 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current per module per leg SYMBOL TEST CONDITIONS IF(AV) 50 % duty cycle at TC = 113 °C, rectangular waveform 5 μs sine or 3 μs rect. pulse Following any rated load condition and with rated VRRM applied VALUES UNITS 200 100 11 300 A Maximum peak one cycle non-repetitive surge current IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1.8 A, L = 10 mH 15 mJ IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 1 A SYMBOL TEST CONDITIONS VALUES UNITS 10 ms sine or 6 ms rect. pulse Repetitive avalanche current 1600 ELECTRICAL SPECIFICATIONS PARAMETER 100 A Maximum forward voltage drop VFM 200 A 100 A 200 A TJ = 25 °C TJ = 25 °C TJ = 125 °C VR = Rated VR Maximum reverse leakage current IRM Maximum junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C Typical series inductance LS Measured lead to lead 5 mm from package body Maximum voltage rate of change dV/dt Maximum RMS insulation voltage VINS TJ = 125 °C Rated VR 50 Hz 1.01 1.35 0.85 V 1.13 6 85 mA 3000 pF 7.0 nH 10 000 V/μs 3000 (1 min) 3600 (1 s) V VALUES UNITS -55 to 175 °C THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case per leg RthJC Typical thermal resistance, case to heatsink per module RthCS DC operation °C/W 0.1 Approximate weight to heatsink Mounting torque ± 10 % busbar Case style Revision: 19-Mar-14 0.52 A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. JEDEC® 75 g 2.7 oz. 4 Nm 3 TO-240AA compatible Document Number: 93232 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKJS209/150 Vishay Semiconductors 1000 1000 TJ = 175 °C IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) www.vishay.com 100 TJ = 175 °C TJ = 125 °C TJ = 25 °C 10 100 10 TJ = 125 °C 1 0.1 0.01 TJ = 25 °C 0.001 1 0 0.5 1.0 1.5 2.0 0 2.5 10 20 30 40 50 60 70 80 90 100 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 10 000 TJ = 25 °C 1000 100 0 30 60 90 120 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 DC 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 19-Mar-14 Document Number: 93232 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKJS209/150 Vishay Semiconductors 180 140 160 140 120 DC 100 80 60 40 Square wave (D = 0.50) Rated VR applied 20 See note (1) RMS limit 120 Average Power Loss (W) Allowable Case Temperature (°C) www.vishay.com 100 80 30° 60° 90° 120° 180° DC 60 40 20 0 0 0 50 100 150 200 250 0 300 30 60 90 120 150 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 100 000 10 000 1000 At any rated load condition and with rated VRRM applied following surge 100 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current L D.U.T. IRFP460 Rg = 25 Ω Current monitor High-speed switch Freewheel diode + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 19-Mar-14 Document Number: 93232 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKJS209/150 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS-VS KJ 1 2 S 20 9 3 4 5 / 150 6 1 - Vishay Semiconductors product 2 - Circuit configuration: KJ = ADD-A-PAK - 2 diodes/common anode 3 - S = Schottky diode 4 - Average current rating (20 = 200 A) 5 - Product silicon identification 6 - Voltage rating (150 = 150 V) CIRCUIT CONFIGURATION (1) - (2) + (3) + LINKS TO RELATED DOCUMENTS Dimensions Revision: 19-Mar-14 www.vishay.com/doc?95369 Document Number: 93232 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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