VS-VSKJS209/150 Datasheet

VS-VSKJS209/150
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Vishay Semiconductors
ADD-A-PAK Generation VII
Power Modules Schottky Rectifier, 200 A
FEATURES
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
• Low thermal resistance
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
ADD-A-PAK
BENEFITS
• Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate
PRODUCT SUMMARY
IF(AV)
200 A
VR
150 V
Package
ADD-A-PAK
Circuit
Two diodes common anode
• High surge capability
• Easy mounting on heatsink
MECHANICAL DESCRIPTION
The ADD-A-PAK generation VII, new generation of
ADD-A-PAK module, combines the excellent thermal
performances obtained by the usage of exposed direct
bonded copper substrate, with advanced compact simple
package solution and simplified internal structure with
minimized number of interfaces.
ELECTRICAL DESCRIPTION
The VS-VSKJS209.. Schottky rectifier common anode has
been optimized for low reverse leakage at high temperature.
The proprietary barrier technology allows for reliable
operation up to 175 °C junction temperature. 
Typical applications are in high current switching power
supplies, plating power supplies, UPS systems, converters,
freewheeling diodes, welding, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
CHARACTERISTICS
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
VF
100 Apk, TJ = 125 °C
TJ
Range
VALUES
UNITS
200
A
150
V
11 300
A
0.85
V
-55 to 175
°C
VS-VSKJS209/150
UNITS
150
V
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
Revision: 19-Mar-14
SYMBOL
VR
VRWM
Document Number: 93232
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VS-VSKJS209/150
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Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
per module
per leg
SYMBOL
TEST CONDITIONS
IF(AV)
50 % duty cycle at TC = 113 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
Following any rated
load condition and with
rated VRRM applied
VALUES
UNITS
200
100
11 300
A
Maximum peak one cycle
non-repetitive surge current
IFSM
Non-repetitive avalanche energy
EAS
TJ = 25 °C, IAS = 1.8 A, L = 10 mH
15
mJ
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
1
A
SYMBOL
TEST CONDITIONS
VALUES
UNITS
10 ms sine or 6 ms rect. pulse
Repetitive avalanche current
1600
ELECTRICAL SPECIFICATIONS
PARAMETER
100 A
Maximum forward voltage drop
VFM
200 A
100 A
200 A
TJ = 25 °C
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
Maximum reverse leakage current
IRM
Maximum junction capacitance
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Typical series inductance
LS
Measured lead to lead 5 mm from package body
Maximum voltage rate of change
dV/dt
Maximum RMS insulation voltage
VINS
TJ = 125 °C
Rated VR
50 Hz
1.01
1.35
0.85
V
1.13
6
85
mA
3000
pF
7.0
nH
10 000
V/μs
3000 (1 min)
3600 (1 s)
V
VALUES
UNITS
-55 to 175
°C
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage 
temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance, 
junction to case per leg
RthJC
Typical thermal resistance, 
case to heatsink per module
RthCS
DC operation
°C/W
0.1
Approximate weight
to heatsink
Mounting torque ± 10 %
busbar
Case style
Revision: 19-Mar-14
0.52
A mounting compound is recommended and the torque
should be rechecked after a period of 3 hours to allow for
the spread of the compound.
JEDEC®
75
g
2.7
oz.
4
Nm
3
TO-240AA compatible
Document Number: 93232
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSKJS209/150
Vishay Semiconductors
1000
1000
TJ = 175 °C
IR - Reverse Current (mA)
IF - Instantaneous Forward Current (A)
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100
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
10
100
10
TJ = 125 °C
1
0.1
0.01
TJ = 25 °C
0.001
1
0
0.5
1.0
1.5
2.0
0
2.5
10
20
30
40
50
60
70
80
90 100
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
CT - Junction Capacitance (pF)
10 000
TJ = 25 °C
1000
100
0
30
60
90
120
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
DC
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 19-Mar-14
Document Number: 93232
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSKJS209/150
Vishay Semiconductors
180
140
160
140
120
DC
100
80
60
40
Square wave (D = 0.50)
Rated VR applied
20
See note (1)
RMS limit
120
Average Power Loss (W)
Allowable Case Temperature (°C)
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100
80
30°
60°
90°
120°
180°
DC
60
40
20
0
0
0
50
100
150
200
250
0
300
30
60
90
120
150
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
IFSM - Non-Repetitive Surge Current (A)
IF(AV) - Average Forward Current (A)
100 000
10 000
1000
At any rated load condition
and with rated VRRM applied
following surge
100
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
D.U.T.
IRFP460
Rg = 25 Ω
Current
monitor
High-speed
switch
Freewheel
diode
+ Vd = 25 V
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 19-Mar-14
Document Number: 93232
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSKJS209/150
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-VS KJ
1
2
S
20
9
3
4
5
/
150
6
1
-
Vishay Semiconductors product
2
-
Circuit configuration:
KJ = ADD-A-PAK - 2 diodes/common anode
3
-
S = Schottky diode
4
-
Average current rating (20 = 200 A)
5
-
Product silicon identification
6
-
Voltage rating (150 = 150 V)
CIRCUIT CONFIGURATION
(1)
-
(2)
+
(3)
+
LINKS TO RELATED DOCUMENTS
Dimensions
Revision: 19-Mar-14
www.vishay.com/doc?95369
Document Number: 93232
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For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
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Document Number: 91000