VS-409CNQ...PbF Series Datasheet

VS-409CNQ...PbF Series
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 400 A
FEATURES
Lug
terminal
anode 1
• 175 °C TJ operation
Lug
terminal
anode 2
• Center tap module
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
Base common
cathode
TO-244
• UL approved file E222165
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
PRODUCT SUMMARY
IF(AV)
400 A
VR
135 V, 150 V
Package
TO-244
Circuit
Two diodes common cathode
The VS-409CNQ... center tap Schottky rectifier module
series has been optimized for low reverse leakage at high
temperature. The proprietary barrier technology allows for
reliable operation up to 175 °C junction temperature. Typical
applications are in high current switching power supplies,
plating power supplies, UPS systems, converters,
freewheeling diodes, welding, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM
Range
IFSM
tp = 5 μs sine
VF
200 Apk, TJ = 125 °C (per leg)
TJ
Range
VALUES
UNITS
400
A
135/150
V
20 000
A
0.75
V
-55 to 175
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
VR
Maximum working peak reverse voltage
VRWM
VS-409CNQ135PbF
VS-409CNQ150PbF
UNITS
135
150
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward
current (fig. 5)
SYMBOL
TEST CONDITIONS
VALUES
UNITS
200
per leg
IF(AV)
50 % duty cycle at TC = 129 °C, rectangular waveform
per device
400
A
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
VRRM applied
20 000
Maximum peak one cycle non-repetitive 
surge current per leg (fig. 7)
IFSM
Non-repetitive avalanche energy per leg
EAS
TJ = 25 °C, IAS = 5.5 A, L = 1 mH
15
mJ
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
1
A
Repetitive avalanche current per leg
10 ms sine or 6 ms rect. pulse
2300
Revision: 26-Mar-14
Document Number: 94207
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-409CNQ...PbF Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
200 A
Maximum forward voltage drop per leg 
See fig. 1
VFM (1)
200 A
IRM (1)
Maximum junction capacitance per leg
CT
1.46
0.89
6
VR = Rated VR
TJ = 125 °C
Typical series inductance per leg
LS
dV/dt
mA
85
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Maximum voltage rate of change
V
0.75
TJ = 125 °C
TJ = 25 °C
UNITS
1.13
TJ = 25 °C
400 A
400 A
Maximum reverse leakage current per leg
See fig. 2
VALUES
6000
From top of terminal hole to mounting plane
Rated VR
pF
5.0
nH
10 000
V/μs
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNITS
TJ, TStg
-55
-
175
°C
-
-
0.19
-
-
0.095
-
0.10
-
-
68
-
g
-
2.4
-
oz.
Maximum junction and storage temperature range
Thermal resistance, junction to case per leg
RthJC
Thermal resistance, junction to case per module
Thermal resistance, case to heatsink
RthCS
Weight
°C/W
Mounting torque
35.4 (4)
53.1 (6)
Mounting torque center hole
30 (3.4)
40 (4.6)
Terminal torque
-
44.2 (5)
-
-
80
2" lever pull
-
-
35
lbf in
1000
1000
TJ = 175 °C
IR - Reverse Current (mA)
IF - Instantaneous Forward Current (A)
30 (3.4)
Vertical pull
lbf in
(N m)
TJ = 125 °C
100
TJ = 25 °C
10
TJ = 175 °C
100
TJ = 150 °C
10
TJ = 125 °C
TJ = 100 °C
1
TJ = 75 °C
0.1
TJ = 50 °C
0.01
TJ = 25 °C
0.001
1
0
0.5
1.0
1.5
2.0
2.5
0
30
60
90
120
150
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 26-Mar-14
Document Number: 94207
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-409CNQ...PbF Series
www.vishay.com
Vishay Semiconductors
CT - Junction Capacitance (pF)
10 000
1000
TJ = 25 °C
100
0
30
60
90
120
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
0.1
D = 0.75
0.01
D = 0.50
D = 0.33
Single pulse
(thermal resistance)
D = 0.25
D = 0.20
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
250
180
160
Average Power Loss (W)
Allowable Case Temperature (°C)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
DC
140
Square wave (D = 0.50)
80 % rated Vr applied
120
100
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
200
150
RMS limit
100
DC
50
See note (1)
80
0
0
50
100
150
200
250
300
0
50
100
150
200
250
300
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Revision: 26-Mar-14
Document Number: 94207
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-409CNQ...PbF Series
www.vishay.com
IFSM - Non-Repetitive Surge Current (A)
Vishay Semiconductors
100 000
At any rated load condition
and with rated VRRM applied
following surge
10 000
1000
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
High-speed
switch
IRFP460
D.U.T.
Freewheel
diode
Rg = 25 Ω
Current
monitor
+ Vd = 25 V
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
ORDERING INFORMATION TABLE
Device code
VS-
40
9
C
N
Q
1
2
3
4
5
6
1
2
-
Vishay Semiconductors product
Average current rating (x 10)
3
-
Product silicon identification
4
-
C = Circuit configuration
5
-
N = Not isolated
6
-
Q = Schottky rectifier diode
7
-
Voltage ratings
8
-
Lead (Pb)-free
135 PbF
7
8
135 = 135 V
150 = 150 V
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95021
Revision: 26-Mar-14
Document Number: 94207
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000