VS-303CNQ100PbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 300 A FEATURES Lug terminal anode 1 Lug terminal anode 2 • 175 °C TJ operation • Center tap module • Low forward voltage drop • High frequency operation • Guard ring for enhanced ruggedness and long term reliability Base common cathode TO-244 • UL approved file E222165 • Designed and qualified for industrial level • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION PRODUCT SUMMARY IF(AV) 300 A VR 100 V Package TO-244 Circuit Two diodes common cathode The VS-303CNQ... center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in high current switching power supplies, plating power supplies, UPS systems, converters, freewheeling diodes, welding, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS Rectangular waveform IF(AV) VRRM IFSM tp = 5 μs sine VF 150 Apk, TJ = 125 °C (per leg) TJ Range VALUES UNITS 300 A 100 V 22 000 A 0.72 V -55 to 175 °C VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VR Maximum working peak reverse voltage VRWM VS-303CNQ100PbF UNITS 100 V ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current See fig. 5 SYMBOL TEST CONDITIONS VALUES UNITS 150 per leg IF(AV) 50 % duty cycle at TC = 138 °C, rectangular waveform per device 300 A Maximum peak one cycle non-repetitive surge current per leg See fig. 7 IFSM Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 13 A, L = 0.2 mH 15 mJ Repetitive avalanche current per leg IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 1 A Revision: 26-Mar-14 5 μs sine or 3 μs rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied 22 000 2500 Document Number: 94177 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-303CNQ100PbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 150 A Maximum forward voltage drop per leg See fig. 1 VFM (1) 150 A IRM (1) Maximum junction capacitance per leg CT 1.09 0.85 4.5 VR = Rated VR TJ = 125 °C LS Maximum voltage rate of change dV/dt mA 80 VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C Typical series inductance per leg V 0.72 TJ = 125 °C TJ = 25 °C UNITS 0.91 TJ = 25 °C 300 A 300 A Maximum reverse leakage current per leg See fig. 2 VALUES 4150 From top of terminal hole to mounting plane Rated VR pF 6.0 nH 10 000 V/μs Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range per leg Thermal resistance, junction to case SYMBOL MIN. TYP. MAX. UNITS TJ, TStg - 55 - 175 °C RthJC per module Thermal resistance, case to heatsink RthCS Weight - - 0.28 - - 0.14 - 0.10 - - 68 - g oz. - 2.4 - Mounting torque 35.4 (4) - 53.1 (6) Mounting torque center hole 30 (3.4) - 40 (4.6) Terminal torque - 44.2 (5) - - 80 2" lever pull - - 35 lbf in (N m) lbf in 1000 1000 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) 30 (3.4) Vertical pull °C/W 100 TJ = 175 °C TJ = 125 °C TJ = 25 °C 10 TJ = 175 °C 100 TJ = 150 °C 10 TJ = 125 °C 1 TJ = 100 °C TJ = 75 °C 0.1 TJ = 50 °C 0.01 TJ = 25 °C 1 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20 40 60 80 100 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage (Per Leg) Revision: 26-Mar-14 Document Number: 94177 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-303CNQ100PbF www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 10 000 TJ = 25 °C 1000 100 0 10 20 30 40 50 60 70 80 90 100 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) 1 0.1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.01 Single pulse (thermal resistance) 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) 150 180 170 Average Power Loss (W) Allowable Case Temperature (°C) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) DC 160 150 140 130 Square wave (D = 0.50) 80 % rated VR applied 120 110 D = 0.08 D = 0.17 D = 0.25 D = 0.33 D = 0.50 125 100 RMS limit 75 DC 50 25 See note (1) 100 0 0 50 100 150 200 250 0 40 80 120 160 200 240 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) Fig. 6 - Forward Power Loss Characteristics (Per Leg) Revision: 26-Mar-14 Document Number: 94177 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-303CNQ100PbF www.vishay.com IFSM - Non-Repetitive Surge Current (A) Vishay Semiconductors 100 000 At any rated load condition and with rated VRRM applied following surge 10 000 1000 10 100 10 000 1000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg) L High-speed switch IRFP460 D.U.T. Freewheel diode Rg = 25 Ω Current monitor + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR ORDERING INFORMATION TABLE Device code VS- 30 3 C N Q 1 2 3 4 5 6 1 - Vishay Semiconductors product 2 - Average current rating (x 10) 3 - Product silicon identification 4 - C = Circuit configuration 5 - N = Not isolated 6 - Q = Schottky rectifier diode 7 - Voltage rating (100 = 100 V) 8 - Lead (Pb)-free 100 PbF 7 8 LINKS TO RELATED DOCUMENTS Dimensions Revision: 26-Mar-14 www.vishay.com/doc?95021 Document Number: 94177 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-244 DIMENSIONS in millimeters (inches) 35 (1.37) REF. 13 (0.51) 7 (0.27) 6 (0.23) 17.5 (0.69) 16.5 (0.65) 40 (1.57) 80 (3.15) Ø 5.2 (Ø 0.20) 3 12.6 (0.5) Ø 7.2 (Ø 0.28) (2 places) 3 1 2 21 (0.82) 20 (0.78) ¼" - 20 UNC 9.6 (0.37) MIN. 93 (3.66) MAX. Revision: 24-Apr-15 Document Number: 95021 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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