VS-VSKT152/04PbF Datasheet

VS-VSKT152/04PbF
www.vishay.com
Vishay Semiconductors
Thyristor/Thyristor, 150 A
(New INT-A-PAK Power Module)
FEATURES
• Electrically isolated by DBC ceramic (AI2O3)
• 3500 VRMS isolating voltage
• Industrial standard package
• High surge capability
• Glass passivated chips
• Simple mounting
• UL approved file E78996
• Designed and qualified for multiple level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
New INT-A-PAK
APPLICATIONS
PRODUCT SUMMARY
IT(AV)
150 A
Type
Modules - Thyristor, Standard
Package
INT-A-PAK
Circuit
Two SCRs doubler circuit
• Battery charges
• Welders
• Power converters
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
85 °C
IT(AV)
VALUES
UNITS
150
A
330
IT(RMS)
ITSM
I2t
50 Hz
4000
60 Hz
4200
50 Hz
80
60 Hz
73
A
kA2s
I2t
800
kA2s
VRRM
400
V
TStg
Range
-40 to 150
TJ
Range
-40 to 125
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-VSKT152/04PbF
VRRM/VDRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM/VDSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM/IDRM
AT 125 °C
mA
400
500
50
Revision: 11-Apr-14
Document Number: 94514
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSKT152/04PbF
www.vishay.com
Vishay Semiconductors
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current 
at case temperature
Maximum RMS on-state current
SYMBOL
IT(AV)
IT(RMS)
TEST CONDITIONS
As AC switch
t = 8.3 ms
ITSM
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I2t for fusing
Value of threshold voltage
On-state slope resistance
Maximum on-state voltage drop
I2t
VT(TO)
rt
VTM
UNITS
150
A
85
°C
180° conduction half sine wave
t = 10 ms
Maximum peak, one-cycle 
on-state, non-repetitive 
surge current
VALUES
330
4000
No voltage
reapplied
100 % VRRM 
reapplied
No voltage
reapplied
4200
A
3350
Sine half wave,
initial TJ =
TJ maximum
100 % VRRM 
reapplied
3500
80
73
kA2s
56
51
800
kA2s
0.82
V
1.44
m
Ipk =  x IT(AV), TJ = 25 °C
1.48
V
200
400
t = 0.1 ms to 10 ms, no voltage reapplied
TJ maximum
Maximum holding current
IH
TJ = 25 °C, anode supply = 6 V, 
resistive load, gate open circuit
Maximum latching current
IL
TJ = 25 °C, anode supply = 6 V, resistive load
mA
SWITCHING
PARAMETER
Typical delay time
Typical rise time
Typical turn-off time
SYMBOL
tgd
tgr
tq
TEST CONDITIONS
TJ = 25 °C
Gate current = 1 A, dlg/dt = 1 A/μs
Vd = 0.67 % VDRM
ITM = 300 A, - dl/dt = 15 A/μs; TJ = TJ maximum
VR = 50 V; dV/dt = 20 V/μs; gate 0 V, 100 
VALUES
UNITS
1
2
μs
50 to 200
BLOCKING
PARAMETER
Maximum peak reverse and
off-state leakage current
RMS insulation voltage
Critical rate of rise of off-state voltage
SYMBOL
IRRM,
IDRM
TEST CONDITIONS
TJ = 125 °C
VALUES
UNITS
50
mA
VINS
50 Hz, circuit to base, all terminals shorted, t = 1 s
3500
V
dV/dt
TJ = TJ maximum, exponential to 67 % rated VDRM
1000
V/μs
Revision: 11-Apr-14
Document Number: 94514
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSKT152/04PbF
www.vishay.com
Vishay Semiconductors
TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
TEST CONDITIONS
VALUES
PGM
tp  5 ms, TJ = TJ maximum
12
PG(AV)
f = 50 Hz, TJ = TJ maximum
3
IGM
Maximum peak negative
gate voltage
- VGT
VGT
4
TJ = 25 °C
TJ = TJ maximum
IGT
Maximum gate voltage 
that will not trigger
VGD
Maximum gate current 
that will not trigger
IGD
Maximum rate of rise of 
turned-on current
dI/dt
V
2.5
1.7
Anode supply = 6 V, 
resistive load; Ra = 1 
TJ = - 40 °C
Maximum required DC gate
current to trigger
A
10
TJ = - 40 °C
Maximum required DC gate
voltage to trigger
W
3
tp  5 ms, TJ = TJ maximum
UNITS
270
TJ = 25 °C
150
TJ = TJ maximum
80
mA
0.3
V
10
mA
300
A/μs
VALUES
UNITS
TJ = TJ maximum, rated VDRM applied
TJ = TJ maximum, ITM = 400 A rated VDRM applied
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating
temperature range
TEST CONDITIONS
TJ
- 40 to 125
Maximum storage 
temperature range
TStg
- 40 to 150
Maximum thermal resistance,
junction to case per junction
RthJC
DC operation
0.18
Maximum thermal resistance,
case to heatsink per module
RthCS
Mounting surface smooth, flat and greased
0.05
Mounting
torque ± 10 %
°C
K/W
IAP to heatsink
A mounting compound is recommended and
the torque should be rechecked after a period of
3 hours to allow for the spread of the compound. 
Lubricated threads.
busbar to IAP
Approximate weight
4 to 6
Nm
200
g
7.1
Case style
oz.
INT-A-PAK
R CONDUCTION PER JUNCTION
VSKT152/04PbF
RECTANGULAR CONDUCTION
AT TJ MAXIMUM
SINUSOIDAL CONDUCTION
AT TJ MAXIMUM
DEVICES
UNITS
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
0.007
0.010
0.013
0.016
0.017
0.009
0.012
0.014
0.016
0.017
K/W
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC


Revision: 11-Apr-14
Document Number: 94514
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSKT152/04PbF
VSKT152
RthJC (DC) = 0.182 K/W
120
110
Conduction Angle
100
30˚
60˚
90
90˚
120˚
180˚
80
0
20 40 60 80 100 120 140 160
300
DC
180˚
120˚
90˚
60˚
30˚
250
200
150 RMS Limit
100
Conduction Period
VSKT152
Tj = 125˚C
50
0
0
50
100
150
200
250
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Forward Power Loss Characteristics
130
Peak Half Sine Wave On-state Current (A)
Average On-state Current (A)
Average On-state Current (A)
VSKT152
RthJC (DC) = 0.182 K/W
120
110
Conduction Period
100
30˚
90
60˚
80
90˚
120˚
70
180˚
DC
60
0
50
100
150
200
Fig. 2 - Current Ratings Characteristics
220
180˚
120˚
90˚
60˚
30˚
200
180
160
140
120
RMS Limit
100
80
Conduction Angle
60
40
VSKT152
Tj = 125˚C
20
0
0
3600
20 40 60 80 100 120 140 160
Average On-state Current (A)
Fig. 3 - Forward Power Loss Characteristics
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = 125˚C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
3400
3200
3000
2800
2600
2400
2200
2000
VSKT152
Per Junction
1800
1600
1
250
Average On-state Current (A)
Maximum Average On-state Power Loss (W)
Maximum Average On-state Power Loss (W)
130
Vishay Semiconductors
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Peak Half Sine Wave On-state Current (A)
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
www.vishay.com
4500
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
4000 Of Conduction May Not Be Maintained.
Initial Tj = 125˚C
No Voltage Reapplied
3500
Rated Vrrm Reapplied
3000
2500
2000
VSKT152
Per Junction
1500
0.01
0.1
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 11-Apr-14
Document Number: 94514
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSKT152/04PbF
Vishay Semiconductors
500
0.2
5K
/W
0.4
K/W
VSKT152
Per Module
Tj = 125˚C
200
R
elta
-D
Conduction Angle
300
K/W
0.
12
K/
0.1
6K W
/W
180˚
120˚
90˚
60˚
30˚
400
.01
=0
SA
Rth
/W
4K
0.0
W
K/
08
0.
Maximum Total On-state Power Loss (W)
www.vishay.com
0.6
K/W
1 K/W
100
0
0
0
100 150 200 250 300 350
50
Total RMS Output Current (A)
25
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - On-State Power Loss Characteristics
0.
08
600
K/
W
0.1
2K
/W
400
R
elta
-D
180˚
(Sine)
180˚
(Rect)
500
/W
1K
0.0
700
=
SA
Rth
800
/W
4K
0.0
Maximum Total Power Loss (W)
900
0.2
K/W
0.35
K/W
300
2 x VSKT152
Single Phase Bridge
Connected
Tj = 125˚C
200
100
0.6 K/W
0
0
50
100
150
200
250
Total Output Current (A)
0
300
25
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - On-State Power Loss Characteristics
A
hS
Rt
1200
=
120˚
(Rect)
600
R
800
ta
el
-D
0.0
8K
/W
0.1
K/W
W
K/
1000
04
0.
Maximum Total Power Loss (W)
1400
0.1
6K
/W
400
0.25
K/W
0.4 K
/W
200
1 K/W
0
0
100
200
300
400
Total Output Current (A)
0
500
25
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
Fig. 9 - On-State Power Loss Characteristics
Revision: 11-Apr-14
Document Number: 94514
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSKT152/04PbF
www.vishay.com
Transient Thermal Impedance Z thJC (K/W)
Vishay Semiconductors
Instantaneous On-state Current (A)
1000
100
Tj = 25˚C
10
Tj = 125˚C
VSKT152
Per Junction
1
0.5
1
1.5
2
2.5
1
Steady State Value
RthJC = 0.182 K/W
(DC Operation)
0.1
0.01
VSKT152
0.001
0.001
Instantaneous On-state Voltage (V)
Fig. 10 - On-State Voltage Drop Characteristics
10
Rectangular gate pulse
a)Recommended load line for
rated di/dt: 20 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30% rated di/dt: 15 V, 40 ohms
tr = 1 µs, tp >= 6 µs
1
(1) PGM = 200 W, tp = 300 µs
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms
(a)
TJ = 125 ˚C
TJ = -40 ˚C
(b)
1
0.1
Fig. 11 - Thermal Impedance ZthJC Characteristics
TJ = 25 ˚C
Instantaneous Gate Voltage (V)
100
0.01
Square Wave Pulse Duration (s)
(4)
(3) (2)
(1)
VGD
IGD
0.1
0.001
0.01
Frequency Limited by PG(AV)
VSKT152
0.1
1
10
100
1000
Instantaneous Gate Current (A)
Fig. 12 - Gate Characteristics
Revision: 11-Apr-14
Document Number: 94514
6
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSKT152/04PbF
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-VS KT
2
1
152
04
PbF
3
4
5
1
-
Vishay Semiconductors product
2
-
Circuit configuration
3
4
-
Current rating
Voltage rating (04 = 400 V)
5
-
PbF = Lead (Pb)-free
Note
• To order the optional hardware go to www.vishay.com/doc?95172
CIRCUIT CONFIGURATION
CIRCUIT DESCRIPTION
CIRCUIT
CONFIGURATION CODE
CIRCUIT DRAWING
~
2
+
1
1
T
2
Two SCRs doubler circuit
3
5
7
4
6
3 5 7
4 6
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95067
Revision: 11-Apr-14
Document Number: 94514
7
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
INT-A-PAK IGBT/Thyristor
29 (1.15)
28 (1.10)
9 (0.33)
30 (1.18)
7 (0.28)
DIMENSIONS in millimeters (inches)
Ø 6.5 (0.25 DIA)
80 (3.15)
23 (0.91)
7
6
4
5 (0.20)
5
23 (0.91)
1
3 screws M6 x 10
2
2.8 x 0.8
(0.11 x 0.03)
14.5 (0.57)
35 (1.38)
17 (0.67)
3
66 (2.60)
37 (1.44)
94 (3.70)
Document Number: 95067
Revision: 15-Feb-08
For technical questions, contact: [email protected]
www.vishay.com
1
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000