VS-VSKT152/04PbF www.vishay.com Vishay Semiconductors Thyristor/Thyristor, 150 A (New INT-A-PAK Power Module) FEATURES • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage • Industrial standard package • High surge capability • Glass passivated chips • Simple mounting • UL approved file E78996 • Designed and qualified for multiple level • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 New INT-A-PAK APPLICATIONS PRODUCT SUMMARY IT(AV) 150 A Type Modules - Thyristor, Standard Package INT-A-PAK Circuit Two SCRs doubler circuit • Battery charges • Welders • Power converters MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS 85 °C IT(AV) VALUES UNITS 150 A 330 IT(RMS) ITSM I2t 50 Hz 4000 60 Hz 4200 50 Hz 80 60 Hz 73 A kA2s I2t 800 kA2s VRRM 400 V TStg Range -40 to 150 TJ Range -40 to 125 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-VSKT152/04PbF VRRM/VDRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM/VDSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM/IDRM AT 125 °C mA 400 500 50 Revision: 11-Apr-14 Document Number: 94514 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKT152/04PbF www.vishay.com Vishay Semiconductors ON-STATE CONDUCTION PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS As AC switch t = 8.3 ms ITSM t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing Value of threshold voltage On-state slope resistance Maximum on-state voltage drop I2t VT(TO) rt VTM UNITS 150 A 85 °C 180° conduction half sine wave t = 10 ms Maximum peak, one-cycle on-state, non-repetitive surge current VALUES 330 4000 No voltage reapplied 100 % VRRM reapplied No voltage reapplied 4200 A 3350 Sine half wave, initial TJ = TJ maximum 100 % VRRM reapplied 3500 80 73 kA2s 56 51 800 kA2s 0.82 V 1.44 m Ipk = x IT(AV), TJ = 25 °C 1.48 V 200 400 t = 0.1 ms to 10 ms, no voltage reapplied TJ maximum Maximum holding current IH TJ = 25 °C, anode supply = 6 V, resistive load, gate open circuit Maximum latching current IL TJ = 25 °C, anode supply = 6 V, resistive load mA SWITCHING PARAMETER Typical delay time Typical rise time Typical turn-off time SYMBOL tgd tgr tq TEST CONDITIONS TJ = 25 °C Gate current = 1 A, dlg/dt = 1 A/μs Vd = 0.67 % VDRM ITM = 300 A, - dl/dt = 15 A/μs; TJ = TJ maximum VR = 50 V; dV/dt = 20 V/μs; gate 0 V, 100 VALUES UNITS 1 2 μs 50 to 200 BLOCKING PARAMETER Maximum peak reverse and off-state leakage current RMS insulation voltage Critical rate of rise of off-state voltage SYMBOL IRRM, IDRM TEST CONDITIONS TJ = 125 °C VALUES UNITS 50 mA VINS 50 Hz, circuit to base, all terminals shorted, t = 1 s 3500 V dV/dt TJ = TJ maximum, exponential to 67 % rated VDRM 1000 V/μs Revision: 11-Apr-14 Document Number: 94514 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKT152/04PbF www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER SYMBOL Maximum peak gate power Maximum average gate power Maximum peak gate current TEST CONDITIONS VALUES PGM tp 5 ms, TJ = TJ maximum 12 PG(AV) f = 50 Hz, TJ = TJ maximum 3 IGM Maximum peak negative gate voltage - VGT VGT 4 TJ = 25 °C TJ = TJ maximum IGT Maximum gate voltage that will not trigger VGD Maximum gate current that will not trigger IGD Maximum rate of rise of turned-on current dI/dt V 2.5 1.7 Anode supply = 6 V, resistive load; Ra = 1 TJ = - 40 °C Maximum required DC gate current to trigger A 10 TJ = - 40 °C Maximum required DC gate voltage to trigger W 3 tp 5 ms, TJ = TJ maximum UNITS 270 TJ = 25 °C 150 TJ = TJ maximum 80 mA 0.3 V 10 mA 300 A/μs VALUES UNITS TJ = TJ maximum, rated VDRM applied TJ = TJ maximum, ITM = 400 A rated VDRM applied THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating temperature range TEST CONDITIONS TJ - 40 to 125 Maximum storage temperature range TStg - 40 to 150 Maximum thermal resistance, junction to case per junction RthJC DC operation 0.18 Maximum thermal resistance, case to heatsink per module RthCS Mounting surface smooth, flat and greased 0.05 Mounting torque ± 10 % °C K/W IAP to heatsink A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads. busbar to IAP Approximate weight 4 to 6 Nm 200 g 7.1 Case style oz. INT-A-PAK R CONDUCTION PER JUNCTION VSKT152/04PbF RECTANGULAR CONDUCTION AT TJ MAXIMUM SINUSOIDAL CONDUCTION AT TJ MAXIMUM DEVICES UNITS 180° 120° 90° 60° 30° 180° 120° 90° 60° 30° 0.007 0.010 0.013 0.016 0.017 0.009 0.012 0.014 0.016 0.017 K/W Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 11-Apr-14 Document Number: 94514 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKT152/04PbF VSKT152 RthJC (DC) = 0.182 K/W 120 110 Conduction Angle 100 30˚ 60˚ 90 90˚ 120˚ 180˚ 80 0 20 40 60 80 100 120 140 160 300 DC 180˚ 120˚ 90˚ 60˚ 30˚ 250 200 150 RMS Limit 100 Conduction Period VSKT152 Tj = 125˚C 50 0 0 50 100 150 200 250 Fig. 1 - Current Ratings Characteristics Fig. 4 - Forward Power Loss Characteristics 130 Peak Half Sine Wave On-state Current (A) Average On-state Current (A) Average On-state Current (A) VSKT152 RthJC (DC) = 0.182 K/W 120 110 Conduction Period 100 30˚ 90 60˚ 80 90˚ 120˚ 70 180˚ DC 60 0 50 100 150 200 Fig. 2 - Current Ratings Characteristics 220 180˚ 120˚ 90˚ 60˚ 30˚ 200 180 160 140 120 RMS Limit 100 80 Conduction Angle 60 40 VSKT152 Tj = 125˚C 20 0 0 3600 20 40 60 80 100 120 140 160 Average On-state Current (A) Fig. 3 - Forward Power Loss Characteristics At Any Rated Load Condition And With Rated Vrrm Applied Following Surge. Initial Tj = 125˚C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 3400 3200 3000 2800 2600 2400 2200 2000 VSKT152 Per Junction 1800 1600 1 250 Average On-state Current (A) Maximum Average On-state Power Loss (W) Maximum Average On-state Power Loss (W) 130 Vishay Semiconductors 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Peak Half Sine Wave On-state Current (A) Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) www.vishay.com 4500 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control 4000 Of Conduction May Not Be Maintained. Initial Tj = 125˚C No Voltage Reapplied 3500 Rated Vrrm Reapplied 3000 2500 2000 VSKT152 Per Junction 1500 0.01 0.1 1 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 11-Apr-14 Document Number: 94514 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKT152/04PbF Vishay Semiconductors 500 0.2 5K /W 0.4 K/W VSKT152 Per Module Tj = 125˚C 200 R elta -D Conduction Angle 300 K/W 0. 12 K/ 0.1 6K W /W 180˚ 120˚ 90˚ 60˚ 30˚ 400 .01 =0 SA Rth /W 4K 0.0 W K/ 08 0. Maximum Total On-state Power Loss (W) www.vishay.com 0.6 K/W 1 K/W 100 0 0 0 100 150 200 250 300 350 50 Total RMS Output Current (A) 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Fig. 7 - On-State Power Loss Characteristics 0. 08 600 K/ W 0.1 2K /W 400 R elta -D 180˚ (Sine) 180˚ (Rect) 500 /W 1K 0.0 700 = SA Rth 800 /W 4K 0.0 Maximum Total Power Loss (W) 900 0.2 K/W 0.35 K/W 300 2 x VSKT152 Single Phase Bridge Connected Tj = 125˚C 200 100 0.6 K/W 0 0 50 100 150 200 250 Total Output Current (A) 0 300 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Fig. 8 - On-State Power Loss Characteristics A hS Rt 1200 = 120˚ (Rect) 600 R 800 ta el -D 0.0 8K /W 0.1 K/W W K/ 1000 04 0. Maximum Total Power Loss (W) 1400 0.1 6K /W 400 0.25 K/W 0.4 K /W 200 1 K/W 0 0 100 200 300 400 Total Output Current (A) 0 500 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Fig. 9 - On-State Power Loss Characteristics Revision: 11-Apr-14 Document Number: 94514 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKT152/04PbF www.vishay.com Transient Thermal Impedance Z thJC (K/W) Vishay Semiconductors Instantaneous On-state Current (A) 1000 100 Tj = 25˚C 10 Tj = 125˚C VSKT152 Per Junction 1 0.5 1 1.5 2 2.5 1 Steady State Value RthJC = 0.182 K/W (DC Operation) 0.1 0.01 VSKT152 0.001 0.001 Instantaneous On-state Voltage (V) Fig. 10 - On-State Voltage Drop Characteristics 10 Rectangular gate pulse a)Recommended load line for rated di/dt: 20 V, 20 ohms tr = 0.5 µs, tp >= 6 µs b)Recommended load line for <= 30% rated di/dt: 15 V, 40 ohms tr = 1 µs, tp >= 6 µs 1 (1) PGM = 200 W, tp = 300 µs (2) PGM = 60 W, tp = 1 ms (3) PGM = 30 W, tp = 2 ms (4) PGM = 12 W, tp = 5 ms (a) TJ = 125 ˚C TJ = -40 ˚C (b) 1 0.1 Fig. 11 - Thermal Impedance ZthJC Characteristics TJ = 25 ˚C Instantaneous Gate Voltage (V) 100 0.01 Square Wave Pulse Duration (s) (4) (3) (2) (1) VGD IGD 0.1 0.001 0.01 Frequency Limited by PG(AV) VSKT152 0.1 1 10 100 1000 Instantaneous Gate Current (A) Fig. 12 - Gate Characteristics Revision: 11-Apr-14 Document Number: 94514 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKT152/04PbF www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS-VS KT 2 1 152 04 PbF 3 4 5 1 - Vishay Semiconductors product 2 - Circuit configuration 3 4 - Current rating Voltage rating (04 = 400 V) 5 - PbF = Lead (Pb)-free Note • To order the optional hardware go to www.vishay.com/doc?95172 CIRCUIT CONFIGURATION CIRCUIT DESCRIPTION CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING ~ 2 + 1 1 T 2 Two SCRs doubler circuit 3 5 7 4 6 3 5 7 4 6 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95067 Revision: 11-Apr-14 Document Number: 94514 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors INT-A-PAK IGBT/Thyristor 29 (1.15) 28 (1.10) 9 (0.33) 30 (1.18) 7 (0.28) DIMENSIONS in millimeters (inches) Ø 6.5 (0.25 DIA) 80 (3.15) 23 (0.91) 7 6 4 5 (0.20) 5 23 (0.91) 1 3 screws M6 x 10 2 2.8 x 0.8 (0.11 x 0.03) 14.5 (0.57) 35 (1.38) 17 (0.67) 3 66 (2.60) 37 (1.44) 94 (3.70) Document Number: 95067 Revision: 15-Feb-08 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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