MA111 Zener Diodes Composite Elements MAZC062D Silicon planer type Constant voltage, constant current, waveform cripper and surge absorption circuit anode-common element wiring 1.45 0.95 3 +0.1 ● Two 1 0.4 –0.05 joint capacity zener diode (VZ = 6.2V) 1.9±0.2 ● Low +0.1 0.16 –0.06 0.8 +0.2 1.1 –0.1 2 0 to 0.1 0.1 to 0.3 0.4±0.2 1 : Cathode 1 2 : Cathode 2 3 : Anode 1 Anode 2 Mini Type Package (3-pin) ■ Absolute Maximum Ratings (Ta= 25˚C) Parameter Symbol Rating Unit Instanious forward current IFRM 200 Total power dissipation Ptot* 200 mW Junction temperature Tj 150 ˚C Storage temperature Tstg – 55 to + 150 ˚C mA ■ Internal Connection 1 3 * With a printed-circuit board 2 ■ Electrical Characteristics (Ta= 25˚C)* Parameter Forward voltage Zener voltage Operating resistance 1 Condition Symbol VZ min IF=10mA VF *2 IZ= 5mA max Unit 0.9 1.0 V 5.9 6.5 V Ω IZ= 0.5mA 100 RZ IZ= 5mA 30 Ω 3 µA IR VR= 5.5V Terminal capacitance Ct VR= 0V, f=1MHz Note 1. Rated input/output frequency : 5MHz 2. Test method : Depend on JIS C7031 testing 3. Electrostatic discharge is ±15kV Test method : IEC-801(C=150pF, R=330Ω, Contact discharge : 10 times) Test unit : ESS-200AX 4. * 1 : The VZ value is for the temperature of 25˚C. In other cases, carry out the temperature compensation. * 2 : Guaranteeed at 20ms after power application 6.2C typ RZK Reverse current ■ Marking 0.65±0.15 0.95 +0.2 2.9 –0.05 type package (3-pin) +0.25 1.5 –0.05 0.65±0.15 ■ Features ● Mini Unit : mm +0.2 2.8 –0.3 8 pF