MA111 Zener Diodes Composite Elements MA3130WA Silicon planer type Constant voltage, constant current, waveform cripper and surge absorption circuit 1.45 0.95 1 3 +0.1 0.4 –0.05 anode-common wiring of MA3130 1.9±0.2 ● Two 0.65±0.15 0.95 +0.2 2.9 –0.05 type package (3-pin) +0.25 1.5 –0.05 0.65±0.15 ■ Features ● Mini Unit : mm +0.2 2.8 –0.3 Symbol Rating Unit *1 mA Average forward current IF(AV) 100 Instanious forward current IFRM 200 *1 mA Total power dissipation Ptot *2 100 *1 mW Non-repetitive reverse surge power dissipation PZSM Junction temperature Tj Storage temperature Tstg *3 15 W 150 ˚C – 55 to + 150 ˚C +0.1 0.1 to 0.3 0.4±0.2 0 to 0.1 Parameter 0.8 +0.2 1.1 –0.1 ■ Absolute Maximum Ratings (Ta= 25˚C) 0.16 –0.06 2 1 : Cathode 1 2 : Cathode 2 3 : Anode 1 Anode 2 Mini Type Package (3-pin) ■ Internal Connection *1 Working value in a single piece *2 With a printed-circuit board *3 t=100µ s, Tj=150˚C 1 3 2 1 ■ Electrical Characteristics (Ta= 25˚C)* Parameter Symbol Condition Forward voltage VF IF=10mA Zener voltage VZ*2 IZ= 5mA RZK Operating resistance Reverse current Temperature coefficient of zener voltage min typ max 0.8 Unit 0.9 V 14.10 V IZ= 0.5mA 170 Ω RZ IZ= 5mA 30 Ω IR1 VR= 9.0V 0.1 µA IR2 VR= 11.9V 60 µA SZ*3 IZ= 5mA 12.40 7.0 9.4 Note 1. Rated input/output frequency : 5MHz 2. * 1 : The VZ value is for the temperature of 25˚C. In other cases, carry out the temperature compensation. * 2 : Guaranteeed at 20ms after power application 200 * 3 : Tj= 25 to 150˚C 11.0 mV/˚C Ptot – Ta With a printed-circuit board 10mm 10mm K A 13A Power dissipation ■ Marking Ptot (mW) 0.8mm Cu foil t=0.035 mm 150 100 50 0 0 40 80 120 Ambient temperature 160 Ta (˚C) 200