Newsletter TSM4N60E

NEW PRODUCT RELEASE
ANNOUNCEMENT
ISSUE NO. 81
NOV 2014
TSM4N60E
600V, 4A, 2.5Ω N-Channel Power MOSFET
TO-251
Features:
•
•
TO-252
Pin Definition:
1. Gate
2. Drain
3. Source
100% Avalanche Tested
G-S ESD Protection Diode Embedded
Product Portfolio:
Part No.
PKG
Type
VDS
(V)
VGS
(V)
VTH
(V)
RDS(ON) (Ω)
Typ
Max.
Min
Max
Qg
(nC)
Ciss
(pF)
TSM4N60ECH
TO-251
N-CH
600
±30
2
2.5
3
5
12
545
TSM4N60ECP
TO-252
N-CH
600
±30
2
2.5
3
5
12
545
Closest Cross Reference:
TSC
ON
STM
TSM4N60ECH
NDD4N60Z-1G
STU3N62K3
TSM4N60ECP
NDD4N60ZT4G
STD3N62K3
Ordering Information:
Part Number
Outline
(Package)
Reel
Inner
Box
Carton
Carton Size
(pcs)
(pcs)
(pcs)
(mm)
Gross
Weight
(kg/
carton)
Reel
Size
(inch)
Packing
Code
TSM4N60ECH
TO-251
--
3,750
30,000
585*350*315
15
--
C5G
TSM4N60ECP
TO-252
2,500
5,000
25,000
370*370*290
13.2
13
ROG
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