TSM4N60E 600V, 4A, 2.5Ω N-Channel Power MOSFET TO-251 (IPAK) TO-252 (DPAK) Key Parameter Performance Pin Definition: 1. Gate 2. Drain 3. Source Parameter Value Unit VDS 600 V RDS(on)(max) 2.5 Ω Qg (typ) 13 nC Features ● ● Block Diagram 100% Avalanche Tested G-S ESD Protection Diode Embedded Ordering Information Part No. Package Packing TSM4N60ECH C5G TO-251 75pcs / Tube TSM4N60ECP ROG TO-252 2.5kpcs / 13” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds N-Channel MOSFET with ESD Protection Absolute Maximum Ratings (Tc=25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V 4 A 2.34 A IDM 16 A IAR 4 A EAR 8.62 mJ EAS 192 mJ 86.2 W 0.68 W/℃ dV/dt 4.5 V/ns TJ 150 ℃ TSTG -55 to +150 ℃ Symbol Limit Unit Thermal Resistance - Junction to Case RӨJC 1.45 ℃/W Thermal Resistance - Junction to Ambient RӨJA 110 ℃/W Continuous Drain Current (Note 1) Pulsed Drain Current Tc=25℃ ID Tc=100℃ (Note 2) Repetitive Avalanche Current Repetitive Avalanche Energy (Note 1) (Note 1) Single Pulse Avalanche Energy (Note 3) @ TC = 25℃ Total Power Dissipation Peak Diode Recovery dV/dt PD Derate above TC = 25℃ (Note 4) Operating Junction Temperature Storage Temperature Range Thermal Performance Parameter 1/7 Version: A14 TSM4N60E 600V, 4A, 2.5Ω N-Channel Power MOSFET Electrical Specifications (TC = 25oC unless otherwise noted) Parameter Static Conditions Symbol Min Typ Max Unit (Note 5) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 600 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 2A RDS(ON) -- 2 2.5 Ω Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 3 -- 5 V -- -- 1 -- -- 10 Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V VDS = 480V, TJ = 125℃ IDSS µA Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 µA Forward Transconductance VDS = 30V, ID = 2A gfs -- 6 -- S Qg -- 12 -- Qgs -- 3 -- Qgd -- 6 -- Ciss -- 545 -- Coss -- 61 -- Crss -- 10 -- td(on) -- 18 -- tr -- 27 -- td(off) -- 47 -- tf -- 21 -- Maximum Continuous Drain-Source Diode Forward Current IS -- -- 4 A Maximum Pulse Drain-Source Diode Forward Current ISM -- -- 16 A Diode-Source Forward Voltage VGS = 0V, IS = 4A VSD -- -- 1.5 V Reverse Recovery Time VGS = 0V, IS = 4A trr -- 316 -- ns Reverse Recovery Charge dIF/dt = 100A/µs Qrr -- 1.2 -- nC Dynamic (Note 6) Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 480V, ID = 4A, VGS = 10V Input Capacitance Output Capacitance VDS = 25V, VGS = 0V, f = 1MHz Reverse Transfer Capacitance Switching nC pF (Note 7) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDD = 300V, VGS = 10V, RG = 25W, ID = 4A Turn-Off Fall Time Source-Drain Diode Ratings and Characteristic ns (Note 5) Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature 3. VDD = 50V, L= 22mH, IAS = 4A, RG = 25W, Starting TJ = 25℃ 4. ISD ≤ 4A, di/dt ≤ 200A/µs, VDD ≤ BVDS, Starting TJ = 25℃ 5. Pulse test: PW ≤ 300µs, duty cycle ≤ 2% 6. For DESIGN AID ONLY, not subject to production testing. 7. Switching time is essentially independent of operating temperature. 2/7 Version: A14 TSM4N60E 600V, 4A, 2.5Ω N-Channel Power MOSFET Electrical Characteristics Curves (TC = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/7 Version: A14 TSM4N60E 600V, 4A, 2.5Ω N-Channel Power MOSFET Electrical Characteristics Curve (TC = 25oC, unless otherwise noted) Drain Current vs. Case Temperature BVDSS vs. Junction Temperature Threshold Voltage vs. Junction Temperature Capacitance vs. Drain-Source Voltage Maximum Safe Operating Area Normalized Transient Impedance 4/7 Version: A14 TSM4N60E 600V, 4A, 2.5Ω N-Channel Power MOSFET TO-251 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 5/7 Version: A14 TSM4N60E 600V, 4A, 2.5Ω N-Channel Power MOSFET TO-252 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 6/7 Version: A14 TSM4N60E 600V, 4A, 2.5Ω N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7/7 Version: A14