STB3N62K3, STD3N62K3, STF3N62K3 STP3N62K3, STU3N62K3 N-channel 620 V, 2.2 Ω , 2.7 A SuperMESH3™ Power MOSFET D2PAK, DPAK, TO-220FP, TO-220, IPAK Features Type STB3N62K3 STD3N62K3 STF3N62K3 STP3N62K3 STU3N62K3 VDSS RDS(on) max ID Pw 620 V 620 V 620 V 620 V 620 V < 2.5 Ω < 2.5 Ω < 2.5 Ω < 2.5 Ω < 2.5 Ω 2.7 A 2.7 A 2.7 A(1) 2.7 A 2.7 A 45 W 45 W 20 W 45 W 45 W 3 3 2 1 1 DPAK IPAK 3 1 D²PAK 1. Limited by package 3 1 ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Very low intrinsic capacitances ■ Improved diode reverse recovery characteristics ■ Zener-protected TO-220 Figure 1. 3 2 1 2 TO-220FP Internal schematic diagram Application ■ Switching applications Description The new SuperMESH3™ series is obtained through the combination of a further fine tuning of ST's well established strip-based PowerMESH™ layout with a new optimization of the vertical structure. In addition to reducing on-resistance significantly versus previous generation, special attention has been taken to ensure a very good dv/dt capability and higher margin in breakdown voltage for the most demanding application. Table 1. Device summary Order codes Marking Package Packaging STB3N62K3 6N62K3 D²PAK Tape and reel STD3N62K3 6N62K3 DPAK Tape and reel STF3N62K3 6N62K3 TO-220FP Tube STP3N62K3 6N62K3 TO-220 Tube STU3N62K3 6N62K3 IPAK Tube July 2008 Rev 1 1/19 www.st.com 19 Contents STB/D/F/P/U3N62K3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ......................... 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2/19 .............................................. 9 STB/D/F/P/U3N62K3 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter TO-220 D²PAK DPAK IPAK VDS Drain-source voltage (VGS = 0) 620 VGS Gate- source voltage ± 30 Unit TO-220FP V V (1) A ID Drain current (continuous) at TC = 25 °C 2.7 2.7 ID Drain current (continuous) at TC = 100 °C 1.7 1.7 (1) A 10.8 10.8(1) A 45 20 W 0.36 0.16 W/°C IDM (2) PTOT Drain current (pulsed) Total dissipation at TC = 25 °C Derating factor VESD(G-S) dv/dt (3) Gate source ESD (HBM-C = 100 pF, R = 1.5 kΩ) Peak diode recovery voltage slope VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) Tstg Storage temperature Tj 2500 V 9 V/ns -- 2500 V -55 to 150 °C 150 °C Max. operating junction temperature 1. Limited by package 2. Pulse width limited by safe operating area 3. ISD ≤ 2.7 A, di/dt ≤ 200 A/µs, VDD = 80% V(BR)DSS Table 3. Symbol Thermal data Parameter Rthj-case Thermal resistance junction-case max Rthj-pcb Thermal resistance junction-pcb max Rthj-amb Thermal resistance junction-amb max Tl Table 4. TO-220 D²PAK DPAK IPAK TO-220FP 2.78 -- 50 62.5 Maximum lead temperature for soldering purpose -100 300 Unit 6.25 °C/W -- °C/W 62.5 °C/W °C Avalanche characteristics Symbol Parameter Max value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 2.7 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 100 mJ 3/19 Electrical characteristics 2 STB/D/F/P/U3N62K3 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS On /off states Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 IDSS VDS = Max rating Zero gate voltage drain current (VGS = 0) VDS = Max rating, TC=125 °C IGSS Gate-body leakage current (VDS = 0) Gate threshold voltage VDS = VGS, ID = 50 µA RDS(on Static drain-source on resistance Symbol gfs (1) Typ. Max. Unit 620 V 1 50 µA µA ± 10 µA 3.75 4.5 V 2.2 2.5 Ω Typ. Max. Unit VGS = ± 20 V VGS(th) Table 6. Min. 3 VGS = 10 V, ID = 1.4 A Dynamic Parameter Forward transconductance Test conditions Min. VDS = 15 V, ID = 1.4 A 2.1 S Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1 MHz, VGS = 0 385 55 6 pF pF pF Equivalent output capacitance VGS = 0, VDS = 0 to 496 V 32.3 pF RG Intrinsic gate resistance f = 1 MHz open drain 10 Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 496 V, ID = 2.7 A, VGS = 10 V (see Figure 17) 13 2.5 7.5 nC nC nC Ciss Coss Crss COSS eq(1) 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 7. Symbol td(on) tr td(off) tf 4/19 Switching times Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions VDD = 310 V, ID =1.7 A, RG = 4.7 Ω, VGS = 10 V (see Figure 16) Min. Typ. 9 6.8 22 15.6 Max Unit ns ns ns ns STB/D/F/P/U3N62K3 Table 8. Electrical characteristics Source drain diode Symbol Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD = 2.7 A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 2.7 A, di/dt = 100 A/µs VDD = 60 V (see Figure 21) 190 825 9 ns nC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 2.7 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 21) 255 1100 10 ns nC A trr Qrr IRRM trr Qrr IRRM Test conditions Min. Typ. Max. Unit 2.7 10.8 A A 1.6 V 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Table 9. Symbol BVGSO(1) Gate-source Zener diode Parameter Gate-source breakdown voltage Test conditions Igs=± 1 mA (open drain) Min Typ Max Unit 30 V 1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components 5/19 Electrical characteristics STB/D/F/P/U3N62K3 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220, IPAK, DPAK, D²PAK Figure 3. Thermal impedance for TO-220, IPAK, DPAK, D²PAK Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Output characteristics Figure 7. Transfer characteristics 6/19 STB/D/F/P/U3N62K3 Figure 8. Normalized BVDSS vs temperature Electrical characteristics Figure 9. Static drain-source on resistance Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs temperature Figure 13. Normalized on resistance vs temperature 7/19 Electrical characteristics Figure 14. Source-drain diode forward characteristics 8/19 STB/D/F/P/U3N62K3 Figure 15. Maximum avalanche energy vs temperature STB/D/F/P/U3N62K3 3 Test circuits Test circuits Figure 16. Switching times test circuit for resistive load Figure 17. Gate charge test circuit Figure 18. Test circuit for inductive load Figure 19. Unclamped Inductive load test switching and diode recovery times circuit Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform 9/19 Package mechanical data 4 STB/D/F/P/U3N62K3 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/19 STB/D/F/P/U3N62K3 Package mechanical data TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.48 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 11/19 Package mechanical data STB/D/F/P/U3N62K3 TO-220FP mechanical data mm. Dim. Min. A 4.40 inch Typ Max. Min. 4.60 0.173 Typ. 0.181 Max. B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.70 0.017 0.027 F 0.75 1.00 0.030 0.039 F1 1.15 1.50 0.045 0.067 F2 1.15 1.50 0.045 0.067 G 4.95 5.20 0.195 0.204 G1 2.40 2.70 0.094 0.106 H 10 10.40 0.393 L2 16 0.409 0.630 28.6 30.6 1.126 L4 9.80 10.60 0.385 1.204 0.417 L5 2.9 3.6 0.114 0.141 L6 15.90 16.40 0.626 0.645 L7 9 9.30 0.354 0.366 Dia 3 3.2 0.118 0.126 B D A E L3 L3 L6 F2 H G G1 Dia F F1 L7 L2 L5 1 2 3 L4 7012510-I 12/19 STB/D/F/P/U3N62K3 Package mechanical data TO-251 (IPAK) mechanical data mm. DIM. min. typ max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 e e1 6.60 2.28 4.40 H 4.60 16.10 L 9.00 9.40 (L1) 0.80 1.20 L2 0.80 V1 10 o 0068771_H 13/19 Package mechanical data STB/D/F/P/U3N62K3 TO-252 (DPAK) mechanical data DIM. mm. min. typ max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 D1 E 6.20 5.10 6.40 E1 6.60 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 L4 0.80 0.60 R V2 1 0.20 0o 8o 0068772_G 14/19 STB/D/F/P/U3N62K3 Package mechanical data D²PAK (TO-263) mechanical data mm inch Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 Typ 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 Max Min 4.60 0.23 0.93 1.70 0.60 1.36 9.35 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 10.40 2.54 4.88 15 2.49 2.29 1.27 1.30 Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 8° 0° 0.4 0° Typ 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8° 0079457_M 15/19 Package mechanical data 5 STB/D/F/P/U3N62K3 Package mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 16/19 inch 1.5 D1 1.5 E 1.65 MIN. MAX. 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 0.059 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 0.153 0.161 P0 3.9 4.1 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 1.574 16.3 0.618 0.641 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STB/D/F/P/U3N62K3 Package mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type 17/19 Revision history 6 STB/D/F/P/U3N62K3 Revision history Table 10. 18/19 Document revision history Date Revision 10-Jul-2008 1 Changes First release STB/D/F/P/U3N62K3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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