PANASONIC UN1222

Transistors with built-in Resistor
UN1221/1222/1223/1224
Silicon NPN epitaxial planer transistor
Unit: mm
6.9±0.1
1.5
●
●
●
(R2)
2.2kΩ
4.7kΩ
10kΩ
10kΩ
■ Absolute Maximum Ratings
3
Symbol
Ratings
Unit
VCBO
50
V
Collector to emitter voltage
VCEO
50
V
Collector current
IC
500
mA
Total power dissipation
PT
600
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 to +150
˚C
Emitter
cutoff
current
1.0
2.5
1:Base
2:Collector
3:Emitter
M Type Mold Package
Internal Connection
C
R1
B
R2
E
(Ta=25˚C)
Symbol
Collector cutoff current
1
(Ta=25˚C)
Parameter
Parameter
0.45±0.05
2
2.5
Collector to base voltage
■ Electrical Characteristics
4.1±0.2
0.55±0.1
(R1)
2.2kΩ
4.7kΩ
10kΩ
2.2kΩ
UN1221
UN1222
UN1223
UN1224
4.5±0.1
3.5±0.1
0.85
■ Resistance by Part Number
●
2.4±0.2 2.0±0.2
R
0.
7
1.0±0.1
R0.9
1.25±0.05
●
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
1.0
1.5 R0.9
0.4
For digital circuits
■ Features
●
2.5±0.1
max
Unit
ICBO
VCB = 50V, IE = 0
Conditions
min
typ
1
µA
ICEO
VCE = 50V, IB = 0
1
µA
UN1221
5
UN1222
IEBO
VEB = 6V, IC = 0
2
UN1223/1224
mA
1
Collector to base voltage
VCBO
IC = 10µA, IE = 0
50
V
Collector to emitter voltage
VCEO
IC = 2mA, IB = 0
50
V
hFE
VCE = 10V, IC = 100mA
50
VCE(sat)
IC = 100mA, IB = 5mA
Output voltage high level
VOH
VCC = 5V, VB = 0.5V, RL = 500Ω
Output voltage low level
VOL
VCC = 5V, VB = 3.5V, RL = 500Ω
Transition frequency
fT
VCB = 10V, IE = –50mA, f = 200MHz
Forward
current
transfer
ratio
UN1221
40
UN1222
UN1223/1224
60
Collector to emitter saturation voltage
Input
resistance
0.25
4.9
V
0.2
200
UN1221/1224
V
V
MHz
2.2
UN1222
R1
(–30%)
UN1223
4.7
(+30%)
kΩ
10
Resistance ratio
UN1224
R1/R2
0.8
1.0
1.2
0.22
1
Transistors with built-in Resistor
UN1221/1222/1223/1224
Common characteristics chart
PT — Ta
Total power dissipation PT (mW)
800
700
600
500
400
300
200
100
0
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (˚C)
Characteristics charts of UN1221
IC — VCE
VCE(sat) — IC
IB=1.0mA
Ta=25˚C
Collector current IC (mA)
250
0.9mA
0.8mA
200
0.7mA
0.6mA
150
0.5mA
100
0.4mA
0.3mA
50
0.2mA
0.1mA
0
0
2
4
6
8
10
Collector to emitter saturation voltage VCE(sat) (V)
100
IC/IB=10
30
10
3
1
Ta=75˚C
0.3
25˚C
0.1
0.03
–25˚C
12
1
200
25˚C
100
3
10
30
100
300
1
1000
3
IO — VIN
16
12
8
30
100
300
1000
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
10
Collector current IC (mA)
Collector current IC (mA)
Output current IO (µA)
Collector output capacitance Cob (pF)
Ta=75˚C
–25˚C
10000
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
4
3
0
0.1
0.3
1
3
10
Collector to base voltage
2
300
0
Cob — VCB
20
VCE=10V
0.01
Collector to emitter voltage VCE (V)
24
hFE — IC
400
Forward current transfer ratio hFE
300
30
100
VCB (V)
1
0.4
0.03
0.6
0.8
1.0
1.2
Input voltage VIN (V)
1.4
0.01
0.1
0.3
1
3
10
30
Output current IO (mA)
100
Transistors with built-in Resistor
UN1221/1222/1223/1224
Characteristics charts of UN1222
IC — VCE
VCE(sat) — IC
100
Collector current IC (mA)
250
IB=1.0mA
0.9mA
200
0.8mA
0.7mA
150
0.6mA
0.5mA
100
0.4mA
0.3mA
50
0.2mA
0.1mA
IC/IB=10
30
10
3
1
Ta=75˚C
0.3
25˚C
0.1
–25˚C
0.03
VCE=10V
0.01
0
0
2
4
6
8
10
10
3
30
100
100
–25˚C
50
300
1000
1
3
6
4
30
100
300
1000
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
Output current IO (µA)
8
10
Collector current IC (mA)
IO — VIN
10000
f=1MHz
IE=0
Ta=25˚C
10
25˚C
Collector current IC (mA)
Cob — VCB
12
Ta=75˚C
150
0
1
12
Collector to emitter voltage VCE (V)
Collector output capacitance Cob (pF)
hFE — IC
200
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
300
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
2
3
0
0.1
0.3
1
3
10
Collector to base voltage
30
0.03
1
0.4
100
VCB (V)
0.6
0.8
1.0
1.2
0.01
0.1
1.4
Input voltage VIN (V)
0.3
1
3
10
30
100
Output current IO (mA)
Characteristics charts of UN1223
IC — VCE
VCE(sat) — IC
100
Collector current IC (mA)
200
IB=1.0mA
0.9mA
0.8mA
160
120
0.7mA
0.6mA
0.5mA
80
0.4mA
0.3mA
40
0.2mA
0.1mA
hFE — IC
IC/IB=10
30
10
3
1
Ta=75˚C
25˚C
0.3
0.1
–25˚C
0.03
0
2
4
6
8
10
Collector to emitter voltage VCE (V)
12
Ta=75˚C
VCE=10V
25˚C
150
100
–25˚C
50
0
0.01
0
200
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
240
1
3
10
30
100
300
Collector current IC (mA)
1000
1
3
10
30
100
300
1000
Collector current IC (mA)
3
Transistors with built-in Resistor
UN1221/1222/1223/1224
Cob — VCB
IO — VIN
10000
10
8
6
4
VIN — IO
100
VO=5V
Ta=25˚C
3000
30
1000
10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
Output current IO (µA)
Collector output capacitance Cob (pF)
12
300
100
30
10
VO=0.2V
Ta=25˚C
3
1
0.3
0.1
2
3
0
0.1
0.3
1
3
10
Collector to base voltage
30
0.03
1
0.4
100
0.6
0.8
1.0
1.2
0.01
0.1
1.4
Input voltage VIN (V)
VCB (V)
0.3
1
3
10
30
100
Output current IO (mA)
Characteristics charts of UN1224
IC — VCE
VCE(sat) — IC
Ta=25˚C
Collector current IC (mA)
250
IB=1.0mA
200
0.9mA
0.8mA
150
0.7mA
0.6mA
0.5mA
100
0.4mA
0.3mA
50
0.2mA
0.1mA
Collector to emitter saturation voltage VCE(sat) (V)
100
0
IC/IB=10
30
10
3
1
Ta=75˚C
0.3
25˚C
0.1
0.03
–25˚C
2
4
6
8
10
12
3
–25˚C
50
30
100
300
1
1000
3
6
4
30
100
300
1000
VIN — IO
1000
VO=5V
Ta=25˚C
3000
300
1000
100
Input voltage VIN (V)
8
10
Collector current IC (mA)
IO — VIN
Output current IO (µA)
10
10
10000
f=1MHz
IE=0
Ta=25˚C
25˚C
100
Collector current IC (mA)
Cob — VCB
12
Ta=75˚C
150
0
1
Collector to emitter voltage VCE (V)
Collector output capacitance Cob (pF)
VCE=10V
0.01
0
300
100
30
10
VO=0.2V
Ta=25˚C
30
10
3
1
2
3
0
0.1
0.3
1
3
10
Collector to base voltage
4
hFE — IC
200
Forward current transfer ratio hFE
300
30
100
VCB (V)
1
0.4
0.3
0.6
0.8
1.0
Input voltage VIN
1.2
(V)
1.4
0.1
0.1
0.3
1
3
10
30
Output current IO (mA)
100