Composite Transistors XP04387 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 ● UN1213+UN1119 ■ Absolute Maximum Ratings Parameter (Ta=25˚C) Symbol Ratings Unit VCBO 50 V Collector to emitter voltage VCEO 50 V Collector current IC 100 mA Collector to base voltage VCBO –50 V Collector to emitter voltage VCEO –50 V Collector current IC –100 mA 1 Total power dissipation PT 150 mW 2 Overall Junction temperature Tj 150 ˚C Tstg –55 to +150 ˚C Tr2 +0.05 Marking Symbol: IT Internal Connection 3 Storage temperature 0.2±0.1 1 : Emitter (Tr1) 4 : Emitter (Tr2) 2 : Base (Tr1) 5 : Base (Tr2) 3 : Collector (Tr2) 6 : Collector (Tr1) EIAJ : SC–88 S–Mini Type Package (6–pin) Collector to base voltage Tr1 0.12 –0.02 0 to 0.1 ■ Basic Part Number of Element 0.7±0.1 0.9±0.1 0.2 ● Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 0.425 0.65 ● 2.0±0.1 ■ Features 1.25±0.1 0.65 0.425 0.2±0.05 2.1±0.1 Tr1 6 5 Tr2 4 1 Composite Transistors ■ Electrical Characteristics ● (Ta=25˚C) Tr1 Parameter Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = 10µA, IE = 0 50 V Collector to emitter voltage VCEO IC = 2mA, IB = 0 50 V ICBO VCB = 50V, IE = 0 0.1 µA ICEO VCE = 50V, IB = 0 0.5 µA Emitter cutoff current IEBO VEB = 6V, IC = 0 0.1 mA Forward current transfer ratio hFE VCE = 10V, IC = 5mA Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 0.3mA 0.25 V Output voltage high level VOH VCC = 5V, VB = 0.5V, RL = 1kΩ Output voltage low level VOL VCC = 5V, VB = 3.5V, RL = 1kΩ Input resistance R1 Resistance ratio R1/R2 Transition frequency fT Collector cutoff current ● 80 4.9 –30% 0.8 VCB = 10V, IE = –2mA, f = 200MHz V 0.2 V 47 +30% kΩ 1.0 1.2 150 MHz Tr2 Parameter Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = –10µA, IE = 0 –50 V Collector to emitter voltage VCEO IC = –2mA, IB = 0 –50 V Collector cutoff current 2 XP04387 ICBO VCB = –50V, IE = 0 – 0.1 µA ICEO VCE = –50V, IB = 0 – 0.5 µA –1.5 mA – 0.25 V Emitter cutoff current IEBO VEB = –6V, IC = 0 Forward current transfer ratio hFE VCE = –10V, IC = –5mA Collector to emitter saturation voltage VCE(sat) IC = –10mA, IB = – 0.3mA Output voltage high level VOH VCC = –5V, VB = – 0.5V, RL = 1kΩ Output voltage low level VOL VCC = –5V, VB = –2.5V, RL = 1kΩ Input resistance R1 Resistance ratio R1/R2 Transition frequency fT VCB = –10V, IE = 1mA, f = 200MHz 30 –4.9 V – 0.2 V –30% 1 +30% kΩ 0.08 0.1 0.12 80 MHz Composite Transistors XP04387 Common characteristics chart PT — Ta Total power dissipation PT (mW) 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) Characteristics charts of Tr1 IC — VCE VCE(sat) — IC 100 Collector current IC (mA) IB=1.0mA 120 0.9mA 0.8mA 0.7mA 0.6mA 100 0.5mA 0.4mA 80 0.3mA 60 0.2mA 40 20 0.1mA 0 2 4 6 8 10 12 IC/IB=10 30 10 3 1 0.3 0.1 0.03 Collector to emitter voltage VCE (V) –25˚C 3 10 Ta=75˚C 300 25˚C 250 –25˚C 200 150 100 50 30 100 1 (mA) 3 3 2 30 100 300 1000 VIN — IO 100 VO=5V Ta=25˚C 3000 30 1000 10 Input voltage VIN (V) 4 10 Collector current IC (mA) IO — VIN 10000 Output current IO (µA) Collector output capacitance Cob (pF) 1 Collector current IC f=1MHz IE=0 Ta=25˚C 5 VCE=10V 350 0 0.3 Cob — VCB 6 Ta=75˚C 25˚C 0.01 0.1 0 hFE — IC 400 Forward current transfer ratio hFE Ta=25˚C 140 Collector to emitter saturation voltage VCE(sat) (V) 160 300 100 30 10 VO=0.2V Ta=25˚C 3 1 0.3 0.1 1 0.03 3 0 0.1 0.3 1 3 10 Collector to base voltage 30 100 VCB (V) 1 0.4 0.6 0.8 1.0 1.2 Input voltage VIN (V) 1.4 0.01 0.1 0.3 1 3 10 30 100 Output current IO (mA) 3 Composite Transistors XP04387 Characteristics charts of Tr2 IC — VCE VCE(sat) — IC –100 Collector current IC (mA) –200 IB=–1.0mA –0.9mA –0.8mA –0.7mA –160 –120 –80 –0.6mA –0.5mA –0.4mA –0.3mA –40 –0.2mA –0.1mA 0 0 –2 –4 –6 –8 –10 –12 IC/IB=10 –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 –25˚C –0.01 –0.1 –0.3 Collector to emitter voltage VCE (V) –10 Ta=75˚C 80 25˚C –25˚C 40 0 –1 –100 –3 4 3 2 –10 –30 –100 –300 –1000 Collector current IC (mA) VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C 5 –30 120 IO — VIN Output current IO (µA) Collector output capacitance Cob (pF) –3 –10000 –300 –100 –30 –10 VO= –0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage 4 –1 VCE= –10V Collector current IC (mA) Cob — VCB 6 hFE — IC 160 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) –240 –30 –100 VCB (V) –1 –0.4 –0.03 –0.6 –0.8 –1.0 –1.2 Input voltage VIN (V) –1.4 –0.01 –0.1 –0.3 –1 –3 –10 –30 Output current IO (mA) –100