SQ4532AEY Datasheet

SQ4532AEY
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Vishay Siliconix
Automotive N-and P-Channel 30 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
• TrenchFET® power MOSFET
N-CHANNEL
P-CHANNEL
30
-30
RDS(on) (Ω) at VGS = ± 10 V
0.031
0.070
• 100 % Rg and UIS tested
RDS(on) (Ω) at VGS = ± 4.5 V
0.042
0.190
7.3
-5.3
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
VDS (V)
ID (A)
Configuration
• AEC-Q101 qualified c
N- and P-Pair
Package
SO-8
SO-8 Dual
D1
8
D1
7
D2
6
D1
D2
5
S2
G2
G1
Top View
2
1 G1
S1
4
3 G2
S2
S1
D2
N-Channel MOSFET
P-Channel MOSFET
Marking Code: Q4532A
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
N-CHANNEL
P-CHANNEL
Drain-Source Voltage
VDS
30
-30
Gate-Source Voltage
VGS
Continuous Drain Current
TC = 25 °C
TC = 125 °C
Continuous Source Current (Diode Conduction)
Pulsed Drain Current
a
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation a
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
± 20
7.3
-5.3
4.2
-3
IS
4.2
-3
IDM
29
-21
IAS
10
-9
EAS
5
4
3.3
3.3
1.1
1.1
ID
PD
TJ, Tstg
-55 to +175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
PCB Mount
b
SYMBOL
N-CHANNEL
P-CHANNEL
RthJA
110
105
RthJF
45
45
UNIT
°C/W
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. When mounted on 1" square PCB (FR4 material).
c. Parametric verification ongoing.
S15-1926-Rev. A, 17-Aug-15
Document Number: 62981
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ4532AEY
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance b
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0, ID = 250 μA
N-Ch
30
-
-
VGS = 0, ID = -250 μA
P-Ch
-30
-
-
VDS = VGS, ID = 250 μA
N-Ch
1.5
2
2.5
VDS = VGS, ID = -250 μA
VDS = 0 V, VGS = ± 20 V
P-Ch
-1.5
-2
-2.5
N-Ch
-
-
± 100
P-Ch
-
-
± 100
VGS = 0 V
VDS = 30 V
N-Ch
-
-
1
VGS = 0 V
VDS = -30 V
P-Ch
-
-
-1
VGS = 0 V
VDS = 30 V, TJ = 125 °C
N-Ch
-
-
50
VGS = 0 V
VDS = -30 V, TJ = 125 °C
P-Ch
-
-
-50
VGS = 0 V
VDS = 30 V, TJ = 175 °C
N-Ch
-
-
150
VGS = 0 V
VDS = -30 V, TJ = 175 °C
P-Ch
-
-
-150
VGS = 10 V
VDS = 5 V
N-Ch
15
-
-
VGS = -10 V
VDS = -5 V
P-Ch
-15
-
-
VGS = 10 V
ID = 4.9 A
N-Ch
-
0.021
0.031
VGS = -10 V
ID = -3.5 A
P-Ch
-
0.056
0.070
VGS = 10 V
ID = 4.9 A, TJ = 125 °C
N-Ch
-
-
0.064
VGS = -10 V
ID = -3.5 A, TJ = 125 °C
P-Ch
-
-
0.100
VGS = 10 V
ID = 4.9 A, TJ = 175 °C
N-Ch
-
-
0.082
VGS = -10 V
ID = -3.5 A, TJ = 175 °C
P-Ch
-
-
0.117
VGS = 4.5 V
ID = 4.1 A
N-Ch
-
0.033
0.042
VGS = -4.5 V
ID = -2.5 A
P-Ch
-
0.157
0.190
VDS = 15 V, ID = 4.9 A
N-Ch
-
22
-
VDS = -15 V, ID = -3.5 A
P-Ch
-
5.5
-
V
nA
μA
A
Ω
S
Dynamic b
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge c
Qgd
Gate Resistance
Rg
S15-1926-Rev. A, 17-Aug-15
VGS = 0 V
VDS = 15 V, f = 1 MHz
N-Ch
-
357
535
VGS = 0 V
VDS = -15 V, f = 1 MHz
P-Ch
-
352
528
VGS = 0 V
VDS = 15 V, f = 1 MHz
N-Ch
-
82
123
VGS = 0 V
VDS = -15 V, f = 1 MHz
P-Ch
-
95
142
VGS = 0 V
VDS = 15 V, f = 1 MHz
N-Ch
-
36
53
VGS = 0 V
VDS = -15 V, f = 1 MHz
P-Ch
-
59
88
VGS = 10 V
VDS = 15 V, ID = 3.9 A
N-Ch
-
5.9
7.8
VGS = -10 V
VDS = -15 V, ID = -2.5 A
P-Ch
-
7.9
10.2
VGS = 10 V
VDS = 15 V, ID = 3.9 A
N-Ch
-
1
-
VGS = -10 V
VDS = -15 V, ID = -2.5 A
P-Ch
-
1.1
-
VGS = 10 V
VDS = 15 V, ID = 3.9 A
N-Ch
-
1.9
-
VGS = -10 V
VDS = -15 V, ID = -2.5 A
P-Ch
-
2.7
-
N-Ch
1.7
3.4
5.1
P-Ch
2.8
5.8
8.6
f = 1 MHz
pF
nC
Ω
Document Number: 62981
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ4532AEY
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Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
SYMBOL
td(on)
tr
td(off)
tf
TEST CONDITIONS
MIN.
TYP.
MAX.
N-Ch
-
7
10
VDD = -15 V, RL = 15 Ω
ID ≅ -1 A, VGEN = -10 V, Rg = 1 Ω
P-Ch
-
6
9
VDD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 1 Ω
N-Ch
-
17
21
VDD = -15 V, RL = 15 Ω
ID ≅ -1 A, VGEN = -10 V, Rg = 1 Ω
P-Ch
-
17
21
VDD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 1 Ω
N-Ch
-
10
14
VDD = -15 V, RL = 15 Ω
ID ≅ -1 A, VGEN = -10 V, Rg = 1 Ω
P-Ch
-
19
24
VDD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 1 Ω
N-Ch
-
19
24
VDD = -15 V, RL = 15 Ω
ID ≅ -1 A, VGEN = -10 V, Rg = 1 Ω
P-Ch
-
16
20
VDD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 1 Ω
UNIT
ns
Source-Drain Diode Ratings and Characteristics b
Pulsed Current a
ISM
Forward Voltage
VSD
N-Ch
-
-
29
P-Ch
-
-
-21
IS = 2 A
N-Ch
-
0.8
1.2
IS = -1.5 A
P-Ch
-
-0.8
-1.2
A
V
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-1926-Rev. A, 17-Aug-15
Document Number: 62981
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ4532AEY
www.vishay.com
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
20
20
VGS = 10 V thru 4 V
16
ID - Drain Current (A)
ID - Drain Current (A)
16
12
VGS = 3 V
8
4
12
TC = 25 °C
8
TC = 125 °C
4
TC = - 55 °C
VGS = 2 V
0
0
0.4
0.8
1.2
1.6
2.0
VDS - Drain-to-Source Voltage (V)
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.10
500
0.08
400
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
0.0
0.06
0.04
VGS = 4.5 V
0.02
Ciss
300
200
Coss
100
VGS = 10V
Crss
0.00
0
0
4
8
12
16
20
0
5
ID - Drain Current (A)
10
15
20
25
VDS - Drain-to-Source Voltage (V)
30
Capacitance
On-Resistance vs. Drain Current
2.0
10
RDS(on) - On-Resistance (Normalized)
ID = 3.9 A
VDS = 15 V
VGS - Gate-to-Source Voltage (V)
10
8
6
4
2
0
0
1
2
3
4
5
6
ID = 4.9 A
1.7
VGS =10 V
1.4
1.1
VGS = 4.5 V
0.8
0.5
- 50 - 25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
S15-1926-Rev. A, 17-Aug-15
175
Document Number: 62981
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ4532AEY
www.vishay.com
Vishay Siliconix
5
0.5
4
0.1
VGS(th) Variance (V)
ID - Drain Current (A)
N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
3
TC = 25 °C
2
TC = 125 °C
1
ID = 5 mA
- 0.3
ID = 250 μA
- 0.7
- 1.1
TC = - 55 °C
- 1.5
- 50 - 25
0
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
10
0
50
75
100
125
150
175
TJ - Temperature (°C)
Threshold Voltage
Transfer Characteristics
0.25
10
0.20
TJ = 150 °C
1
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
25
TJ = 25 °C
0.1
0.01
0.15
0.10
TJ = 150 °C
0.05
TJ = 25 °C
0.001
0.00
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
VSD - Source-to-Drain Voltage (V)
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source Drain Diode Forward Voltage
50
30
VDS - Drain-to-Source Voltage (V)
TC = - 55 °C
gfs - Transconductance (S)
24
TC = 25 °C
18
TC = 125 °C
12
6
40
ID = 1 mA
30
20
10
0
0
0
1
2
3
ID - Drain Current (A)
Transconductance
S15-1926-Rev. A, 17-Aug-15
4
5
-50
-25
0
25
50
75 100 125
TJ - Junction Temperature (°C)
150
175
Drain Source Breakdown vs. Junction Temperature
Document Number: 62981
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ4532AEY
www.vishay.com
Vishay Siliconix
N-CHANNEL THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
100
IDM Limited
ID - Drain Current (A)
10
Limited by RDS(on)*
100 μs
1 ms
1
10 ms
100 ms
0.1
BVDSS Limited
1 s, 10 s, DC
TC = 25 °C
Single Pulse
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 110 °C/W
0.02
3. TJM - T A = PDMZthJA(t)
Single Pulse
0.01
10 -4
10 -3
4. Surface Mounted
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
S15-1926-Rev. A, 17-Aug-15
Document Number: 62981
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ4532AEY
www.vishay.com
Vishay Siliconix
N-CHANNEL THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
S15-1926-Rev. A, 17-Aug-15
Document Number: 62981
7
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ4532AEY
www.vishay.com
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
5
20
VGS = 10 V thru 6 V
4
ID - Drain Current (A)
ID - Drain Current (A)
16
VGS = 5 V
12
8
VGS = 4 V
4
TC = 125 °C
TC = - 55 °C
VGS = 2 V
0
2
4
TC = 25 °C
2
1
VGS = 3 V
0
3
0
6
8
0
10
1
VDS - Drain-to-Source Voltage (V)
2
0.5
5
600
500
C - Capacitance (pF)
0.4
RDS(on) - On-Resistance (Ω)
4
Transfer Characteristics
Output Characteristics
0.3
0.2
VGS = 4.5 V
0.1
400
Ciss
300
200
Coss
100
Crss
VGS =10 V
0.0
0
0
4
8
12
16
20
0
5
ID - Drain Current (A)
10
15
20
25
VDS - Drain-to-Source Voltage (V)
30
Capacitance
On-Resistance vs. Drain Current
2.0
10
RDS(on) - On-Resistance (Normalized)
ID = 2.5 A
VDS = 15 V
VGS - Gate-to-Source Voltage (V)
3
VGS - Gate-to-Source Voltage (V)
8
6
4
2
ID = 3.5 A
1.7
VGS = 10 V
1.4
1.1
VGS = 4.5 V
0.8
0.5
0
0
2
4
6
8
- 50 - 25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
S15-1926-Rev. A, 17-Aug-15
175
Document Number: 62981
8
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ4532AEY
www.vishay.com
Vishay Siliconix
20
1.0
16
0.7
VGS(th) Variance (V)
ID - Drain Current (A)
P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
12
TC = 25 °C
8
ID = 250 μA
0.4
ID = 5 mA
0.1
- 0.2
4
TC = 125 °C
TC = - 55 °C
- 0.5
- 50 - 25
0
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
10
0
50
75
100
125
150
175
Threshold Voltage
Transfer Characteristics
0.5
10
0.4
RDS(on) - On-Resistance (Ω)
100
IS - Source Current (A)
25
TJ - Temperature (°C)
1
TJ = 150 °C
0.1
TJ = 25 °C
0.01
0.3
TJ = 150 °C
0.2
0.1
TJ = 25 °C
0.001
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
4
6
8
10
VGS - Gate-to-Source Voltage (V)
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
- 30
VDS - Drain-to-Source Voltage (V)
10
8
gfs - Transconductance (S)
2
VSD - Source-to-Drain Voltage (V)
TC = 25 °C
TC = - 55 °C
6
4
TC = 125 °C
2
0
0
1
2
3
ID - Drain Current (A)
Transconductance
S15-1926-Rev. A, 17-Aug-15
4
5
- 32
ID = 1 mA
- 34
- 36
- 38
- 40
- 50 - 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
Document Number: 62981
9
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ4532AEY
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Vishay Siliconix
P-CHANNEL THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
100
IDM Limited
Limited by RDS(on)*
ID - Drain Current (A)
10
100 μs
1 ms
1
10 ms
100 ms
0.1
1 s, 10 s, DC
BVDSS Limited
TC = 25 °C
Single Pulse
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 105 °C/W
0.02
3. TJM - T A = PDMZthJA(t)
Single Pulse
0.01
10 -4
10 -3
4. Surface Mounted
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
S15-1926-Rev. A, 17-Aug-15
Document Number: 62981
10
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ4532AEY
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Vishay Siliconix
P-CHANNEL THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62981.
S15-1926-Rev. A, 17-Aug-15
Document Number: 62981
11
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ordering Information
www.vishay.com
Vishay Siliconix
SO-8
Ordering codes for the SQ rugged series power MOSFETs in the SO-8 package:
OLD ORDERING CODE a
NEW ORDERING CODE
SQ4005EY
-
SQ4005EY-T1_GE3
SQ4050EY
SQ4050EY-T1-GE3
SQ4050EY-T1_GE3
SQ4182EY
SQ4182EY-T1-GE3
SQ4182EY-T1_GE3
SQ4184EY
SQ4184EY-T1-GE3
SQ4184EY-T1_GE3
SQ4282EY
SQ4282EY-T1-GE3
SQ4282EY-T1_GE3
SQ4284EY
SQ4284EY-T1-GE3
SQ4284EY-T1_GE3
SQ4401EY
SQ4401EY-T1-GE3
SQ4401EY-T1_GE3
SQ4410EY
SQ4410EY-T1-GE3
SQ4410EY-T1_GE3
SQ4425EY
SQ4425EY-T1-GE3
SQ4425EY-T1_GE3
SQ4431EY
SQ4431EY-T1-GE3
SQ4431EY-T1_GE3
SQ4435EY
SQ4435EY-T1-GE3
SQ4435EY-T1_GE3
DATASHEET PART NUMBER
SQ4470EY
SQ4470EY-T1-GE3
SQ4470EY-T1_GE3
SQ4483BEEY
SQ4483BEEY-T1-GE3
SQ4483BEEY-T1_GE3
SQ4483EY
-
SQ4483EY-T1_GE3
SQ4532AEY
-
SQ4532AEY-T1_GE3
SQ4840EY
SQ4840EY-T1-GE3
SQ4840EY-T1_GE3
SQ4850EY
SQ4850EY-T1-GE3
SQ4850EY-T1_GE3
SQ4917EY
SQ4917EY-T1-GE3
SQ4917EY-T1_GE3
SQ4920EY
SQ4920EY-T1-GE3
SQ4920EY-T1_GE3
SQ4937EY
SQ4937EY-T1-GE3
SQ4937EY-T1_GE3
SQ4940AEY
SQ4940AEY-T1-GE3
SQ4940AEY-T1_GE3
SQ4946AEY
SQ4946AEY-T1-GE3
SQ4946AEY-T1_GE3
SQ4949EY
SQ4949EY-T1-GE3
SQ4949EY-T1_GE3
SQ4961EY
SQ4961EY-T1-GE3
SQ4961EY-T1_GE3
SQ9407EY
SQ9407EY-T1-GE3
SQ9407EY-T1_GE3
SQ9945BEY
SQ9945BEY-T1-GE3
SQ9945BEY-T1_GE3
Note
a. Old ordering code is obsolete and no longer valid for new orders
Revision: 21-Oct-15
Document Number: 66624
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
www.vishay.com
1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
www.vishay.com
22
Document Number: 72606
Revision: 21-Jan-08
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Revision: 02-Oct-12
1
Document Number: 91000