SQ4532AEY www.vishay.com Vishay Siliconix Automotive N-and P-Channel 30 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® power MOSFET N-CHANNEL P-CHANNEL 30 -30 RDS(on) (Ω) at VGS = ± 10 V 0.031 0.070 • 100 % Rg and UIS tested RDS(on) (Ω) at VGS = ± 4.5 V 0.042 0.190 7.3 -5.3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 VDS (V) ID (A) Configuration • AEC-Q101 qualified c N- and P-Pair Package SO-8 SO-8 Dual D1 8 D1 7 D2 6 D1 D2 5 S2 G2 G1 Top View 2 1 G1 S1 4 3 G2 S2 S1 D2 N-Channel MOSFET P-Channel MOSFET Marking Code: Q4532A ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL N-CHANNEL P-CHANNEL Drain-Source Voltage VDS 30 -30 Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C Continuous Source Current (Diode Conduction) Pulsed Drain Current a Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation a L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ± 20 7.3 -5.3 4.2 -3 IS 4.2 -3 IDM 29 -21 IAS 10 -9 EAS 5 4 3.3 3.3 1.1 1.1 ID PD TJ, Tstg -55 to +175 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) PCB Mount b SYMBOL N-CHANNEL P-CHANNEL RthJA 110 105 RthJF 45 45 UNIT °C/W Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. When mounted on 1" square PCB (FR4 material). c. Parametric verification ongoing. S15-1926-Rev. A, 17-Aug-15 Document Number: 62981 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4532AEY www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b VDS VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0, ID = 250 μA N-Ch 30 - - VGS = 0, ID = -250 μA P-Ch -30 - - VDS = VGS, ID = 250 μA N-Ch 1.5 2 2.5 VDS = VGS, ID = -250 μA VDS = 0 V, VGS = ± 20 V P-Ch -1.5 -2 -2.5 N-Ch - - ± 100 P-Ch - - ± 100 VGS = 0 V VDS = 30 V N-Ch - - 1 VGS = 0 V VDS = -30 V P-Ch - - -1 VGS = 0 V VDS = 30 V, TJ = 125 °C N-Ch - - 50 VGS = 0 V VDS = -30 V, TJ = 125 °C P-Ch - - -50 VGS = 0 V VDS = 30 V, TJ = 175 °C N-Ch - - 150 VGS = 0 V VDS = -30 V, TJ = 175 °C P-Ch - - -150 VGS = 10 V VDS = 5 V N-Ch 15 - - VGS = -10 V VDS = -5 V P-Ch -15 - - VGS = 10 V ID = 4.9 A N-Ch - 0.021 0.031 VGS = -10 V ID = -3.5 A P-Ch - 0.056 0.070 VGS = 10 V ID = 4.9 A, TJ = 125 °C N-Ch - - 0.064 VGS = -10 V ID = -3.5 A, TJ = 125 °C P-Ch - - 0.100 VGS = 10 V ID = 4.9 A, TJ = 175 °C N-Ch - - 0.082 VGS = -10 V ID = -3.5 A, TJ = 175 °C P-Ch - - 0.117 VGS = 4.5 V ID = 4.1 A N-Ch - 0.033 0.042 VGS = -4.5 V ID = -2.5 A P-Ch - 0.157 0.190 VDS = 15 V, ID = 4.9 A N-Ch - 22 - VDS = -15 V, ID = -3.5 A P-Ch - 5.5 - V nA μA A Ω S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge c Qgd Gate Resistance Rg S15-1926-Rev. A, 17-Aug-15 VGS = 0 V VDS = 15 V, f = 1 MHz N-Ch - 357 535 VGS = 0 V VDS = -15 V, f = 1 MHz P-Ch - 352 528 VGS = 0 V VDS = 15 V, f = 1 MHz N-Ch - 82 123 VGS = 0 V VDS = -15 V, f = 1 MHz P-Ch - 95 142 VGS = 0 V VDS = 15 V, f = 1 MHz N-Ch - 36 53 VGS = 0 V VDS = -15 V, f = 1 MHz P-Ch - 59 88 VGS = 10 V VDS = 15 V, ID = 3.9 A N-Ch - 5.9 7.8 VGS = -10 V VDS = -15 V, ID = -2.5 A P-Ch - 7.9 10.2 VGS = 10 V VDS = 15 V, ID = 3.9 A N-Ch - 1 - VGS = -10 V VDS = -15 V, ID = -2.5 A P-Ch - 1.1 - VGS = 10 V VDS = 15 V, ID = 3.9 A N-Ch - 1.9 - VGS = -10 V VDS = -15 V, ID = -2.5 A P-Ch - 2.7 - N-Ch 1.7 3.4 5.1 P-Ch 2.8 5.8 8.6 f = 1 MHz pF nC Ω Document Number: 62981 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4532AEY www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time SYMBOL td(on) tr td(off) tf TEST CONDITIONS MIN. TYP. MAX. N-Ch - 7 10 VDD = -15 V, RL = 15 Ω ID ≅ -1 A, VGEN = -10 V, Rg = 1 Ω P-Ch - 6 9 VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 1 Ω N-Ch - 17 21 VDD = -15 V, RL = 15 Ω ID ≅ -1 A, VGEN = -10 V, Rg = 1 Ω P-Ch - 17 21 VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 1 Ω N-Ch - 10 14 VDD = -15 V, RL = 15 Ω ID ≅ -1 A, VGEN = -10 V, Rg = 1 Ω P-Ch - 19 24 VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 1 Ω N-Ch - 19 24 VDD = -15 V, RL = 15 Ω ID ≅ -1 A, VGEN = -10 V, Rg = 1 Ω P-Ch - 16 20 VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 1 Ω UNIT ns Source-Drain Diode Ratings and Characteristics b Pulsed Current a ISM Forward Voltage VSD N-Ch - - 29 P-Ch - - -21 IS = 2 A N-Ch - 0.8 1.2 IS = -1.5 A P-Ch - -0.8 -1.2 A V Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1926-Rev. A, 17-Aug-15 Document Number: 62981 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4532AEY www.vishay.com Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 20 20 VGS = 10 V thru 4 V 16 ID - Drain Current (A) ID - Drain Current (A) 16 12 VGS = 3 V 8 4 12 TC = 25 °C 8 TC = 125 °C 4 TC = - 55 °C VGS = 2 V 0 0 0.4 0.8 1.2 1.6 2.0 VDS - Drain-to-Source Voltage (V) 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.10 500 0.08 400 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.0 0.06 0.04 VGS = 4.5 V 0.02 Ciss 300 200 Coss 100 VGS = 10V Crss 0.00 0 0 4 8 12 16 20 0 5 ID - Drain Current (A) 10 15 20 25 VDS - Drain-to-Source Voltage (V) 30 Capacitance On-Resistance vs. Drain Current 2.0 10 RDS(on) - On-Resistance (Normalized) ID = 3.9 A VDS = 15 V VGS - Gate-to-Source Voltage (V) 10 8 6 4 2 0 0 1 2 3 4 5 6 ID = 4.9 A 1.7 VGS =10 V 1.4 1.1 VGS = 4.5 V 0.8 0.5 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S15-1926-Rev. A, 17-Aug-15 175 Document Number: 62981 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4532AEY www.vishay.com Vishay Siliconix 5 0.5 4 0.1 VGS(th) Variance (V) ID - Drain Current (A) N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 3 TC = 25 °C 2 TC = 125 °C 1 ID = 5 mA - 0.3 ID = 250 μA - 0.7 - 1.1 TC = - 55 °C - 1.5 - 50 - 25 0 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) 10 0 50 75 100 125 150 175 TJ - Temperature (°C) Threshold Voltage Transfer Characteristics 0.25 10 0.20 TJ = 150 °C 1 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 25 TJ = 25 °C 0.1 0.01 0.15 0.10 TJ = 150 °C 0.05 TJ = 25 °C 0.001 0.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source Drain Diode Forward Voltage 50 30 VDS - Drain-to-Source Voltage (V) TC = - 55 °C gfs - Transconductance (S) 24 TC = 25 °C 18 TC = 125 °C 12 6 40 ID = 1 mA 30 20 10 0 0 0 1 2 3 ID - Drain Current (A) Transconductance S15-1926-Rev. A, 17-Aug-15 4 5 -50 -25 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 175 Drain Source Breakdown vs. Junction Temperature Document Number: 62981 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4532AEY www.vishay.com Vishay Siliconix N-CHANNEL THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 100 IDM Limited ID - Drain Current (A) 10 Limited by RDS(on)* 100 μs 1 ms 1 10 ms 100 ms 0.1 BVDSS Limited 1 s, 10 s, DC TC = 25 °C Single Pulse 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 110 °C/W 0.02 3. TJM - T A = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient S15-1926-Rev. A, 17-Aug-15 Document Number: 62981 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4532AEY www.vishay.com Vishay Siliconix N-CHANNEL THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. S15-1926-Rev. A, 17-Aug-15 Document Number: 62981 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4532AEY www.vishay.com Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 5 20 VGS = 10 V thru 6 V 4 ID - Drain Current (A) ID - Drain Current (A) 16 VGS = 5 V 12 8 VGS = 4 V 4 TC = 125 °C TC = - 55 °C VGS = 2 V 0 2 4 TC = 25 °C 2 1 VGS = 3 V 0 3 0 6 8 0 10 1 VDS - Drain-to-Source Voltage (V) 2 0.5 5 600 500 C - Capacitance (pF) 0.4 RDS(on) - On-Resistance (Ω) 4 Transfer Characteristics Output Characteristics 0.3 0.2 VGS = 4.5 V 0.1 400 Ciss 300 200 Coss 100 Crss VGS =10 V 0.0 0 0 4 8 12 16 20 0 5 ID - Drain Current (A) 10 15 20 25 VDS - Drain-to-Source Voltage (V) 30 Capacitance On-Resistance vs. Drain Current 2.0 10 RDS(on) - On-Resistance (Normalized) ID = 2.5 A VDS = 15 V VGS - Gate-to-Source Voltage (V) 3 VGS - Gate-to-Source Voltage (V) 8 6 4 2 ID = 3.5 A 1.7 VGS = 10 V 1.4 1.1 VGS = 4.5 V 0.8 0.5 0 0 2 4 6 8 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S15-1926-Rev. A, 17-Aug-15 175 Document Number: 62981 8 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4532AEY www.vishay.com Vishay Siliconix 20 1.0 16 0.7 VGS(th) Variance (V) ID - Drain Current (A) P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 12 TC = 25 °C 8 ID = 250 μA 0.4 ID = 5 mA 0.1 - 0.2 4 TC = 125 °C TC = - 55 °C - 0.5 - 50 - 25 0 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) 10 0 50 75 100 125 150 175 Threshold Voltage Transfer Characteristics 0.5 10 0.4 RDS(on) - On-Resistance (Ω) 100 IS - Source Current (A) 25 TJ - Temperature (°C) 1 TJ = 150 °C 0.1 TJ = 25 °C 0.01 0.3 TJ = 150 °C 0.2 0.1 TJ = 25 °C 0.001 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage - 30 VDS - Drain-to-Source Voltage (V) 10 8 gfs - Transconductance (S) 2 VSD - Source-to-Drain Voltage (V) TC = 25 °C TC = - 55 °C 6 4 TC = 125 °C 2 0 0 1 2 3 ID - Drain Current (A) Transconductance S15-1926-Rev. A, 17-Aug-15 4 5 - 32 ID = 1 mA - 34 - 36 - 38 - 40 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature Document Number: 62981 9 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4532AEY www.vishay.com Vishay Siliconix P-CHANNEL THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 100 IDM Limited Limited by RDS(on)* ID - Drain Current (A) 10 100 μs 1 ms 1 10 ms 100 ms 0.1 1 s, 10 s, DC BVDSS Limited TC = 25 °C Single Pulse 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 105 °C/W 0.02 3. TJM - T A = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient S15-1926-Rev. A, 17-Aug-15 Document Number: 62981 10 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ4532AEY www.vishay.com Vishay Siliconix P-CHANNEL THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62981. S15-1926-Rev. A, 17-Aug-15 Document Number: 62981 11 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Ordering Information www.vishay.com Vishay Siliconix SO-8 Ordering codes for the SQ rugged series power MOSFETs in the SO-8 package: OLD ORDERING CODE a NEW ORDERING CODE SQ4005EY - SQ4005EY-T1_GE3 SQ4050EY SQ4050EY-T1-GE3 SQ4050EY-T1_GE3 SQ4182EY SQ4182EY-T1-GE3 SQ4182EY-T1_GE3 SQ4184EY SQ4184EY-T1-GE3 SQ4184EY-T1_GE3 SQ4282EY SQ4282EY-T1-GE3 SQ4282EY-T1_GE3 SQ4284EY SQ4284EY-T1-GE3 SQ4284EY-T1_GE3 SQ4401EY SQ4401EY-T1-GE3 SQ4401EY-T1_GE3 SQ4410EY SQ4410EY-T1-GE3 SQ4410EY-T1_GE3 SQ4425EY SQ4425EY-T1-GE3 SQ4425EY-T1_GE3 SQ4431EY SQ4431EY-T1-GE3 SQ4431EY-T1_GE3 SQ4435EY SQ4435EY-T1-GE3 SQ4435EY-T1_GE3 DATASHEET PART NUMBER SQ4470EY SQ4470EY-T1-GE3 SQ4470EY-T1_GE3 SQ4483BEEY SQ4483BEEY-T1-GE3 SQ4483BEEY-T1_GE3 SQ4483EY - SQ4483EY-T1_GE3 SQ4532AEY - SQ4532AEY-T1_GE3 SQ4840EY SQ4840EY-T1-GE3 SQ4840EY-T1_GE3 SQ4850EY SQ4850EY-T1-GE3 SQ4850EY-T1_GE3 SQ4917EY SQ4917EY-T1-GE3 SQ4917EY-T1_GE3 SQ4920EY SQ4920EY-T1-GE3 SQ4920EY-T1_GE3 SQ4937EY SQ4937EY-T1-GE3 SQ4937EY-T1_GE3 SQ4940AEY SQ4940AEY-T1-GE3 SQ4940AEY-T1_GE3 SQ4946AEY SQ4946AEY-T1-GE3 SQ4946AEY-T1_GE3 SQ4949EY SQ4949EY-T1-GE3 SQ4949EY-T1_GE3 SQ4961EY SQ4961EY-T1-GE3 SQ4961EY-T1_GE3 SQ9407EY SQ9407EY-T1-GE3 SQ9407EY-T1_GE3 SQ9945BEY SQ9945BEY-T1-GE3 SQ9945BEY-T1_GE3 Note a. Old ordering code is obsolete and no longer valid for new orders Revision: 21-Oct-15 Document Number: 66624 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000