SQD45P03-12 www.vishay.com Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® Power MOSFET - 30 RDS(on) () at VGS = - 10 V 0.010 RDS(on) () at VGS = - 4.5 V 0.024 ID (A) • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested - 50 Configuration Single TO-252 S • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 G Drain Connected to Tab G D S D P-Channel MOSFET Top View ORDERING INFORMATION Package TO-252 Lead (Pb)-free and Halogen-free SQD45P03-12-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS - 30 Gate-Source Voltage VGS ± 20 TC = 25 °Ca Continuous Drain Current Continuous Source Current (Diode TC = 125 °C Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID V - 50 - 37 IS - 50 IDM - 200 IAS - 31 EAS 48 PD UNIT 71 23 A mJ W TJ, Tstg - 55 to + 175 °C SYMBOL LIMIT UNIT THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mountc RthJA 50 RthJC 2.1 °C/W Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. S12-2095-Rev. C, 03-Sep-12 Document Number: 65549 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD45P03-12 www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage - 30 - - - 1.5 - 2.0 - 2.5 VDS = 0 V, VGS = ± 20 V - - ± 100 - - -1 IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward VGS = 0, ID = - 250 μA VDS = VGS, ID = - 250 μA IGSS Zero Gate Voltage Drain Current Transconductanceb VDS VGS(th) RDS(on) gfs VGS = 0 V VDS = - 30 V VGS = 0 V VDS = - 30 V, TJ = 125 °C - - - 50 VGS = 0 V VDS = - 30 V, TJ = 175 °C - - - 150 VGS = - 10 V VDS- 5 V - 50 - - VGS = - 10 V ID = - 15 A - 0.008 0.010 VGS = - 10 V ID = - 15 A, TJ = 125 °C - - 0.015 VGS = - 10 V ID = - 15 A, TJ = 175 °C - - 0.017 VGS = - 4.5 V ID = - 12 A - 0.019 0.024 - 34 - - 2794 3495 - 616 770 - 470 590 VDS = - 15 V, ID = - 17 A V nA μA A S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Rg VGS = 0 V VGS = - 10 V VDS = - 15 V, f = 1 MHz VDS = - 15 V, ID = - 45 A f = 1 MHz td(on) tr td(off) VDD = - 15 V, RL = 0.33 ID - 45 A, VGEN = - 10 V, Rg = 1 tf - 55.3 83 - 7.3 - - 14 - 1.40 2.86 4.50 - 11 16.5 pF nC - 11 16.5 - 29 43.5 - 19 28.5 - - - 200 A - - 0.9 - 1.5 V ns Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = - 40 A, VGS = 0 Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S12-2095-Rev. C, 03-Sep-12 Document Number: 65549 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD45P03-12 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 100 VGS = 10 V thru 6 V 80 I D - Drain Current (A) I D - Drain Current (A) 80 VGS = 5 V 60 40 VGS = 4 V 20 60 40 TC = 25 °C 20 TC = 125 °C TC = - 55 °C 0 0 0 3 6 9 12 VDS - Drain-to-Source Voltage (V) 15 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Output Characteristics 0.05 60 TC = - 55 °C 0.04 RDS(on) - On-Resistance (Ω) gfs - Transconductance (S) 48 TC = 25 °C TC = 125 °C 36 24 VGS = 4.5 V 0.03 0.02 VGS = 10 V 0.01 12 0.00 0 0 8 16 24 ID - Drain Current (A) 32 0 40 20 40 60 80 100 ID - Drain Current (A) On-Resistance vs. Drain Current Transconductance 2.0 100 ID = 15 A 1.7 10 VGS = 10 V I S - Source Current (A) R DS(on) - On-Resistance (Normalized) 10 1.4 1.1 0.8 TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 0.5 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature S12-2095-Rev. C, 03-Sep-12 175 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) Source Drain Diode Forward Voltage Document Number: 65549 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD45P03-12 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 10 0.10 0.08 0.06 0.04 0.02 TJ = 150 °C TJ = 25 °C 0.00 8 VDS = 15 V 6 4 2 0 VGS - Gate-to-Source Voltage (V) 20 30 40 Qg - Total Gate Charge (nC) On-Resistance vs. Gate-to-Source Voltage Gate Charge 0 2 4 6 8 0 10 5000 1.1 4000 0.8 10 50 60 ID = 250 µA VGS(th) Variance (V) C - Capacitance (pF) VGS - Gate-to-Source Voltage (V) R DS(on) - On-Resistance (Ω) ID = 45 A Ciss 3000 2000 Coss 1000 0.5 ID = 5 mA 0.2 - 0.1 Crss 0 0 5 10 15 20 25 V DS - Drain-to-Source Voltage (V) 30 - 0.4 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Temperature (°C) Capacitance Threshold Voltage VDS - Drain-to-Source Voltage (V) - 30 ID = 10 mA - 32 - 34 - 36 - 38 - 40 - 50 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 175 Drain Source Breakdown vs. Junction Temperature S12-2095-Rev. C, 03-Sep-12 Document Number: 65549 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD45P03-12 www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) IDM Limited 100 100 µs ID - Drain Current (A) Limited by RDS(on)* ID Limited 10 1 ms 10 ms 100 ms 1 s, 10 s, DC 1 0.1 TC = 25 °C Single Pulse 0.01 0.01 BVDSS Limited 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S12-2095-Rev. C, 03-Sep-12 Document Number: 65549 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQD45P03-12 www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65549. S12-2095-Rev. C, 03-Sep-12 Document Number: 65549 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Ordering Information www.vishay.com Vishay Siliconix DPAK / TO-252 and Reverse DPAK Ordering codes for the SQ rugged series power MOSFETs in the DPAK / TO-252 and Reverse DPAK packages: DATASHEET PART NUMBER OLD ORDERING CODE a SQD07N25-350H SQD07N25-350H-GE3 SQD07N25-350H_GE3 SQD100N02-3m5L - SQD100N02-3m5L_GE3 SQD100N03-3m2L SQD100N03-3M2L-GE3 SQD100N03-3M2L_GE3 SQD100N03-3m4 SQD100N03-3M4-GE3 SQD100N03-3M4_GE3 NEW ORDERING CODE SQD100N04-3m6 SQD100N04-3M6-GE3 SQD100N04-3M6_GE3 SQD100N04-3m6L SQD100N04-3M6L-GE3 SQD100N04-3M6L_GE3 SQD10N30-330H SQD10N30-330H-GE3 SQD10N30-330H_GE3 SQD15N06-42L SQD15N06-42L-GE3 SQD15N06-42L_GE3 SQD19P06-60L SQD19P06-60L-GE3 SQD19P06-60L_GE3 SQD23N06-31L SQD23N06-31L-GE3 SQD23N06-31L_GE3 SQD25N06-22L SQD25N06-22L-GE3 SQD25N06-22L_GE3 SQD25N15-52 SQD25N15-52-GE3 SQD25N15-52_GE3 SQD30N05-20L SQD30N05-20L-GE3 SQD30N05-20L_GE3 SQD40N06-14L SQD40N06-14L-GE3 SQD40N06-14L_GE3 SQD40N10-25 SQD40N10-25-GE3 SQD40N10-25_GE3 SQD40P10-40L SQD40P10-40L-GE3 SQD40P10-40L_GE3 SQD45P03-12 SQD45P03-12-GE3 SQD45P03-12_GE3 SQD50N04-5m6 SQD50N04-5M6-GE3 SQD50N04-5M6_GE3 SQD50N04-5m6L - SQD50N04-5m6L_GE3 SQD50N05-11L SQD50N05-11L-GE3 SQD50N05-11L_GE3 SQD50N06-09L SQD50N06-09L-GE3 SQD50N06-09L_GE3 SQD50N10-8m9L SQD50N10-8M9L-GE3 SQD50N10-8M9L_GE3 SQD50P03-07 SQD50P03-07-GE3 SQD50P03-07_GE3 SQD50P04-13L SQD50P04-13L-GE3 SQD50P04-13L_GE3 SQD50P04-09L SQD50P04-09L-GE3 SQD50P04-09L_GE3 SQD50P06-15L SQD50P06-15L-GE3 SQD50P06-15L_GE3 SQD50P08-25L SQD50P08-25L-GE3 SQD50P08-25L_GE3 SQD50P08-28 SQD50P08-28-GE3 SQD50P08-28_GE3 SQD90P04-9m4L SQD90P04-9M4L-GE3 SQD90P04-9M4L_GE3 SQD97N06-6m3L SQD97N06-6M3L-GE3 SQD97N06-6M3L_GE3 SQR40N10-25 SQR40N10-25-GE3 SQR40N10-25_GE3 SQR50N04-3m8 SQR50N04-3M8-GE3 SQR50N04-3M8_GE3 Note a. Old ordering code is obsolete and no longer valid for new orders Revision: 11-Nov-15 Document Number: 66957 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-252AA Case Outline E MILLIMETERS A C2 e b2 D1 e1 E1 L gage plane height (0.5 mm) L4 b L5 H D L3 b3 C A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 0.024 C 0.46 0.61 0.018 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 4.10 - 0.161 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC e1 0.090 BSC 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.01 1.52 0.040 0.060 ECN: T13-0592-Rev. A, 02-Sep-13 DWG: 6019 Note • Dimension L3 is for reference only. Revision: 02-Sep-13 Document Number: 64424 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72594 Revision: 21-Jan-08 www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000