SQJ422EP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® Power MOSFET 40 RDS(on) () at VGS = 10 V 0.0034 • 100 % Rg and UIS Tested RDS(on) () at VGS = 4.5 V 0.0043 • AEC-Q101 Qualifiedc ID (A) • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 75 Configuration Single PowerPAK® SO-8L Single m 5m 6.1 D 5.1 3m m G D 4 G S 3 S 2 S S 1 N-Channel MOSFET ORDERING INFORMATION Package PowerPAK SO-8L Lead (Pb)-free and Halogen-free SQJ422EP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C TC = 125 °C Continuous Source Current (Diode Conduction) Pulsed Drain Currenta Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID 62 75 IDM 300 IAS 46 EAS 105 TJ, Tstg Soldering Recommendations (Peak Temperature)d, e V 75 IS PD UNIT 83 27 - 55 to + 175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) SYMBOL PCB Mountb LIMIT RthJA 65 RthJC 1.8 UNIT °C/W Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. When mounted on 1" square PCB (FR-4 material). c. Parametric verification ongoing. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S12-2824-Rev. A, 10-Dec-12 Document Number: 63989 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ422EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage 40 - - 1.5 2.0 2.5 VDS = 0 V, VGS = ± 20 V IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward VGS = 0, ID = 250 μA VDS = VGS, ID = 250 μA IGSS Zero Gate Voltage Drain Current Transconductanceb VDS VGS(th) RDS(on) gfs - - ± 100 VGS = 0 V VDS = 40 V - - 1 VGS = 0 V VDS = 40 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 40 V, TJ = 175 °C - - 150 VGS = 10 V VDS5 V 30 - - VGS = 10 V ID = 18 A - 0.0028 0.0034 VGS = 4.5 V ID = 16 A - 0.0035 0.0043 VGS = 10 V ID = 18 A, TJ = 125 °C - - 0.0071 VGS = 10 V ID = 18 A, TJ = 175 °C - - 0.0089 - 117 - - 3730 4660 - 553 691 - 223 278 VDS = 15 V, ID = 18 A V nA μA A S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Rg VGS = 0 V VDS = 20 V, f = 1 MHz VGS = 10 V VDS = 20 V, ID = 10 A f = 1 MHz td(on) tr td(off) VDD = 20 V, RL = 20 ID 10 A, VGEN = 10 V, Rg = 6 tf - 67 100 - 11.25 - - 10.31 - 0.30 0.63 1.10 - 13 19 pF nC - 10 15 - 29 44 - 8 12 - - 300 A - 0.75 1.1 V ns Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = 12 A, VGS = 0 Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S12-2824-Rev. A, 10-Dec-12 Document Number: 63989 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ422EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 70 60 VGS = 10 V thru 4 V 48 ID - Drain Current (A) ID - Drain Current (A) 56 42 28 14 36 TC = 25 °C 24 TC = 125 °C 12 VGS = 3 V TC = - 55 °C 0 0 0 2 4 6 8 10 0 1 200 4 5 0.025 160 RDS(on) - On-Resistance (Ω) 0.020 TC = 25 °C TC = - 55 °C 120 80 TC = 125 °C 40 0.015 0.010 VGS = 4.5 V 0.005 0 VGS = 10 V 0.000 0 4 8 12 16 20 0 10 20 ID - Drain Current (A) 30 40 50 ID - Drain Current (A) On-Resistance vs. Drain Current Transconductance 3000 10 ID = 10A VGS - Gate-to-Source Voltage (V) 2500 C - Capacitance (pF) 3 Transfer Characteristics Output Characteristics gfs - Transconductance (S) 2 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Ciss 2000 1500 1000 Crss 500 Coss 0 8 VDS = 20 V 6 4 2 0 0 10 20 30 VDS - Drain-to-Source Voltage (V) Capacitance S12-2824-Rev. A, 10-Dec-12 40 0 14 28 42 56 70 Qg - Total Gate Charge (nC) Gate Charge Document Number: 63989 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ422EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 ID = 15 A VGS = 10 V 1.8 10 IS - Source Current (A) RDS(on) - On-Resistance (Normalized) 2.1 1.5 VGS = 4.5 V 1.2 TJ = 150 °C 1 0.1 TJ = 25 °C 0.9 0.01 0.001 0.6 - 50 - 25 0 25 50 75 100 125 150 0.0 175 0.2 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage 0.05 0.4 0.0 VGS(th) Variance (V) RDS(on) - On-Resistance (Ω) 0.04 0.03 0.02 ID = 5 mA - 0.4 ID = 250 μA - 0.8 0.01 TJ = 25 °C TJ = 150 °C - 1.2 0.00 0 2 4 6 8 - 50 - 25 10 0 25 50 75 100 125 150 175 TJ - Temperature (°C) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage VDS - Drain-to-Source Voltage (V) 52 ID = 1 mA 50 48 46 44 42 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature S12-2824-Rev. A, 10-Dec-12 Document Number: 63989 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ422EP www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1000 ID - Drain Current (A) 100 IDM Limited Limited by RDS(on)* 100 μs 1 ms 10 10 ms 100 ms 1 s, 10 s, DC 1 BVDSS Limited TC = 25 °C Single Pulse 0.1 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 68 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient S12-2824-Rev. A, 10-Dec-12 Document Number: 63989 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ422EP www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63989. S12-2824-Rev. A, 10-Dec-12 Document Number: 63989 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Ordering Information www.vishay.com Vishay Siliconix PowerPAK® SO-8L Ordering codes for the SQ rugged series power MOSFETs in the PowerPAK SO-8L package: DATASHEET PART NUMBER OLD ORDERING CODE a NEW ORDERING CODE SQJ200EP - SQJ200EP-T1_GE3 SQJ202EP - SQJ202EP-T1_GE3 SQJ401EP SQJ401EP-T1-GE3 SQJ401EP-T1_GE3 SQJ402EP SQJ402EP-T1-GE3 SQJ402EP-T1_GE3 SQJ403EEP SQJ403EEP-T1-GE3 SQJ403EEP-T1_GE3 SQJ403EP - SQJ403EP-T1_GE3 SQJ410EP SQJ410EP-T1-GE3 SQJ410EP-T1_GE3 SQJ412EP SQJ412EP-T1-GE3 SQJ412EP-T1_GE3 SQJ422EP SQJ422EP-T1-GE3 SQJ422EP-T1_GE3 SQJ431EP SQJ431EP-T1-GE3 SQJ431EP-T1_GE3 SQJ443EP SQJ443EP-T1-GE3 SQJ443EP-T1_GE3 SQJ446EP - SQJ446EP-T1_GE3 SQJ456EP SQJ456EP-T1-GE3 SQJ456EP-T1_GE3 SQJ459EP - SQJ459EP-T1_GE3 SQJ460AEP - SQJ460AEP-T1_GE3 SQJ461EP SQJ461EP-T1-GE3 SQJ461EP-T1_GE3 SQJ463EP SQJ463EP-T1-GE3 SQJ463EP-T1_GE3 SQJ465EP SQJ465EP-T1-GE3 SQJ465EP-T1_GE3 SQJ469EP SQJ469EP-T1-GE3 SQJ469EP-T1_GE3 SQJ486EP SQJ486EP-T1-GE3 SQJ486EP-T1_GE3 SQJ488EP SQJ488EP-T1-GE3 SQJ488EP-T1_GE3 SQJ500AEP SQJ500AEP-T1-GE3 SQJ500AEP-T1_GE3 SQJ840EP SQJ840EP-T1-GE3 SQJ840EP-T1_GE3 SQJ844AEP SQJ844AEP-T1-GE3 SQJ844AEP-T1_GE3 SQJ850EP SQJ850EP-T1-GE3 SQJ850EP-T1_GE3 SQJ858AEP SQJ858AEP-T1-GE3 SQJ858AEP-T1_GE3 SQJ886EP SQJ886EP-T1-GE3 SQJ886EP-T1_GE3 SQJ910AEP SQJ910AEP-T1-GE3 SQJ910AEP-T1_GE3 SQJ912AEP SQJ912AEP-T1-GE3 SQJ912AEP-T1_GE3 SQJ940EP SQJ940EP-T1-GE3 SQJ940EP-T1_GE3 SQJ942EP SQJ942EP-T1-GE3 SQJ942EP-T1_GE3 SQJ951EP SQJ951EP-T1-GE3 SQJ951EP-T1_GE3 SQJ952EP - SQJ952EP-T1_GE3 SQJ956EP SQJ956EP-T1-GE3 SQJ956EP-T1_GE3 SQJ960EP SQJ960EP-T1-GE3 SQJ960EP-T1_GE3 SQJ963EP SQJ963EP-T1-GE3 SQJ963EP-T1_GE3 SQJ968EP SQJ968EP-T1-GE3 SQJ968EP-T1_GE3 SQJ980AEP SQJ980AEP-T1-GE3 SQJ980AEP-T1_GE3 SQJ992EP SQJ992EP-T1-GE3 SQJ992EP-T1_GE3 Note a. Old ordering code is obsolete and no longer valid for new orders Revision: 21-Oct-15 Document Number: 65804 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8L Case Outline for all Parts Document Number: 66934 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 07-Sep-15 Package Information www.vishay.com DIM. Vishay Siliconix MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 1.00 1.07 1.14 0.039 0.042 0.045 A1 0.00 - 0.127 0.00 - 0.005 b 0.33 0.41 0.48 0.013 0.016 0.019 b1 0.44 0.51 0.58 0.017 0.020 0.023 b2 4.80 4.90 5.00 0.189 0.193 0.197 b3 0.094 0.004 b4 0.47 0.019 c 0.20 0.25 0.30 0.008 0.010 0.012 D 5.00 5.13 5.25 0.197 0.202 0.207 D1 4.80 4.90 5.00 0.189 0.193 0.197 D2 3.86 3.96 4.06 0.152 0.156 0.160 D3 1.63 1.73 1.83 0.064 0.068 0.072 e 1.27 BSC 0.050 BSC E 6.05 6.15 6.25 0.238 0.242 0.246 E1 4.27 4.37 4.47 0.168 0.172 0.176 E2 2.75 2.85 2.95 0.108 0.112 0.116 F - - 0.15 - - 0.006 L 0.62 0.72 0.82 0.024 0.028 0.032 L1 0.92 1.07 1.22 0.036 0.042 0.048 K 0.51 0.020 W 0.23 0.009 W1 0.41 0.016 W2 2.82 0.111 W3 q 2.96 0° - 0.117 10° 0° - 10° ECN: C15-1203-Rev. A, 07-Sep-15 DWG: 6044 Note • Millimeters will gover Document Number: 66934 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 07-Sep-15 PAD Pattern www.vishay.com Vishay Siliconix RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L SINGLE 5.000 (0.197) 0.510 (0.020) 2.310 (0.091) 4.061 (0.160) 0.595 (0.023) 6.250 (0.246) 8.250 (0.325) 3.630 (0.143) 0.610 (0.024) 0.410 (0.016) 2.715 (0.107) 0.860 (0.034) 1.291 (0.051) 0.710 (0.028) 0.820 (0.032) 1.905 (0.075) 1.270 (0.050) 7.250 (0.285) Recommended Minimum Pads Dimensions in mm (inches) Revision: 07-Feb-12 1 Document Number: 63818 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000