Reflective Photosensors (Photo Reflectors) CNZ2152 Reflective Photosensor Overview 8.0±0.2 3.2±0.2 CNZ2152 is a photosensor detecting the change of reflective light in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity Si phototransistor is used as the light detecting element. The two elements are located parallel in the same direction and objects are detected when passing in front of the device. ,,,,, ,, 7.0 min. ø0.9+0.1 –0.2 4-ø0.45 Applications Detection of coin and bill 2 Optical mark reading 6.2±0.2 Detection of paper, film and cloth (10.0) Detection of position and edge 1 Start, end mark detection of magnetic tape Input (Light Forward current (DC) emitting diode) Power dissipation VR 3 2 3 4 Pin connection Unit V IF 100 mA PD*1 150 mW Collector to emitter voltage VCEO 20 V Output (Photo Emitter to collector voltage transistor) Collector current VECO 3 V IC 30 mA Collector power dissipation PC*2 150 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C Temperature 4 1 Symbol Ratings Reverse voltage (DC) 3 (Note) ( ) Dimension is reference Absolute Maximum Ratings (Ta = 25˚C) Parameter (2.54) , ,, High sensitivity High SN ratio ø2.2±0.2 1.0(typ.) 3.5±0.2 1.0 +0.1 –0.2 14.0 +0.1 –0.2 16.0±0.3 10.0±0.2 Features Fast response Unit : mm Mark for indicating LED side ø1.5 *1 Input power derating ratio is 2.0 mW/˚C at Ta ≥ 25˚C. *2 Output power derating ratio is 2.0 mW/˚C at Ta ≥ 25˚C. Electrical Characteristics (Ta = 25˚C) Parameter Symbol Conditions Forward voltage (DC) Input characteristics Reverse current (DC) VF IF = 100mA IR VR = 3V Output characteristics Collector cutoff current ICEO Collector current Transfer characteristics Response time IC*1 IC*2 min VCE = 10V 0.8 tr*3 , tf*4 VCC = 10V, IC = 1mA, RL = 100Ω Collector to emitter saturation voltage VCE(sat) IF = 100mA, IC = 1mA characteristics measurement circuit (Ambient light is shut off completely) IC *3 VCC *4 ,, , , ,,,, , ,, ,, , IF max 1.25 1.5 V 10 µA 0.05 VCC = 5V, IF = 20mA, RL = 100Ω *1 *2 Transfer typ 2 Unit µA 3 mA 500 µA 8 µs 0.6 V Time required for the collector current to increase from 10% to 90% of its final value. Time required for the collector current to decrease from 90% to 10% of its initial value. d = 5 mm *1 RL Test paper *2 Standard white paper (reflective ratio 90%) Tracing paper (paper SM-1 for 2nd original paper) 1 CNZ2152 Reflective Photosensors (Photo Reflectors) IF , IC — Ta IF — VF 1.6 Ta = 25˚C IF 100 60 40 IC 20 VF (V) 80 IF = 100mA 80 Forward voltage IF (mA) 100 60 40 40 60 80 0 100 0 0.4 0.8 IC — IF 1.2 1.6 2.0 0.8 0.4 0 – 40 – 20 2.4 0 20 IC — VCE VCC = 5V Ta = 25˚C RL = 100Ω (1) White paper (Reflective ratio 90%) (2) Tracing paper (Paper SM - 1 for 2nd original paper) 40 60 IC — Ta Ta = 25˚C VCC = 5V IF = 20mA RL = 100Ω IC (mA) 80mA 60mA 12 50mA 40mA (1) (2) 10 –1 100 160 IF = 100mA 1 80 Ambient temperature Ta (˚C ) 16 Collector current IC (mA) 10 50mA Forward voltage VF (V) IC (%) 20 8 30mA 20mA 4 Relative output current 0 Ambient temperature Ta (˚C ) 10 2 1.2 20 0 – 25 Collector current VF — Ta 120 Forward current Forward current, collector current IF , IC (mA) 120 120 80 40 10mA 1 0 10 2 10 Forward current IF (mA) 0 4 8 12 16 20 Collector to emitter voltage VCE (V) ICEO — Ta 10 1 100Ω Sig.IN VCC V1 50Ω Sig. V1 OUT V2 V2 RL 20 40 60 80 Ambient temperature Ta (˚C ) 100 tr , ,, 0 60 80 10 –1 10 –2 10 –1 100 VCC = 5V Ta = 25˚C IF = 20mA RL = 100Ω 12 d Mirror Collector current 10V RL = 1kΩ 10 –1 2 IC (mA) tr (µs) Rise time ICEO (µA) Dark current 10 2 10 40 16 VCC = 10V Ta = 25˚C 10 2 10 –2 – 40 – 20 20 IC — d 10 3 VCE = 25V 0 Ambient temperature Ta (˚C ) tr — IC 10 3 1 0 – 40 – 20 24 , , 10 –2 10 –1 td 8 White paper (Reflective ratio 90%) 4 90% 10% tf 1 Collector current IC (mA) 10 0 0 2 4 6 8 Distance d (mm) 10 12