Transmissive Photosensors (Photo Interrupters) CNZ1111,CNZ1112 Photo Interrupters Unit : mm CNZ1111 0.45±0.1 For contactless SW, object detection Mark for indicating LED side 6.0 min. Wide gap between emitting and detecting elements, suitable for thick plate detection 2-0.45±0.2 (2.54) (10.0) SEC. A-A' 3 2-ø3.2±0.2 19.0±0.2 2 6.2±0.2 Highly precise position detection : 0.3 mm 0.45±0.1 Device center A' Features 2.0±0.2 2.2±0.2 25.0±0.35 13.0±0.3 5.0±0.2 A 10.0±0.2 2.5±0.2 Overview CNZ1111 and CNZ1112 are a photocoupler in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to face each other, and objects passing between them are detected. 2 1 3 4 1 Fast response : tr, tf = 6 µs (typ.) 4 Pin connection (Note) ( ) Dimension is reference Small output current variation against change in temperature V 50 mA PD*1 75 mW IC 20 mA Output (Photo Collector to emitter voltage VCEO transistor) Emitter to collector voltage VECO 30 V 5 V Collector power dissipation PC*2 100 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C Temperature Mark for indicating LED side 13.0±0.3 5.0±0.2 A 2.0±0.2 2.2±0.2 3 IF 10.0±0.2 2.5±0.2 VR Collector current 0.45±0.1 Unit 0.45±0.1 Device center A' (10.0) 6.0 min. Reverse voltage (DC) Input (Light Forward current (DC) emitting diode) Power dissipation Symbol Ratings 2 6.2±0.2 Parameter Unit : mm CNZ1112 Absolute Maximum Ratings (Ta = 25˚C) 1 Input power derating ratio is 1.0 mW/˚C at Ta ≥ 25˚C. *2 Output power derating ratio is 1.33 mW/˚C at Ta ≥ 25˚C. *1 2-0.45±0.2 (2.54) SEC. A-A' 3 4 2 3 1 4 Pin connection (Note) ( ) Dimension is reference 1 Transmissive Photosensors (Photo Interrupters) CNZ1111,CNZ1112 Electrical Characteristics (Ta = 25˚C) Parameter Symbol Forward voltage (DC) Input characteristics Reverse current (DC) Collector cutoff current Output characteristics Collector to emitter capacitance Conditions VF IF = 50mA IR VR = 3V ICEO min max 1.2 1.5 V 10 µA 200 nA VCE = 10V CC VCE = 10V, f = 1MHz 5 Collector current IC VCE = 10V, IF = 20mA Transfer Response time tr , tf* VCC = 10V, IC = 1mA, RL = 100Ω characteristics Collector to emitter saturation voltage VCE(sat) IF = 50mA, IC = 0.1mA * typ Unit pF 0.3 mA µs 6 0.3 V Switching time measurement circuit Sig.IN VCC td : Delay time tr : Rise time (Time required for the collector current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector current to decrease from 90% to 10% of its initial value) (Input pulse) Sig.OUT (Output pulse) RL td ,, ,, 50Ω 90% 10% tr tf IF , IC — Ta IF — VF 10 VCE = 10V Ta = 25˚C Ta = 25˚C IF 30 IC 20 10 40 Collector current 40 IC (mA) 50 IF (mA) 50 0 – 25 30 20 1 10 –1 10 –2 10 0 20 40 60 80 Ambient temperature Ta (˚C ) 2 IC — IF 60 Forward current Forward current, collector current IF , IC (mA) 60 100 0 0 0.4 0.8 1.2 1.6 2.0 Forward voltage VF (V) 2.4 10 –3 10 –1 1 10 Forward current IF (mA) 10 2 CNZ1111,CNZ1112 Transmissive Photosensors (Photo Interrupters) VF — Ta IC — VCE IC — Ta 10 2 1.6 160 VCE = 10V IF = 20mA 0.8 0.4 20 40 60 80 IC (%) 20mA 1 10mA 10 –1 10 –2 10 –1 100 Ambient temperature Ta (˚C ) 1 Collector to emitter voltage VCE (V) ICEO — Ta tr (µs) RL = 1kΩ 500Ω Rise time 10 –2 10 100Ω 1 Sig.IN VCC V1 50Ω Sig. V1 OUT V2 V2 RL 10 –3 0 20 40 60 80 Ambient temperature Ta (˚C ) 100 , , ICEO (µA) Dark current 10V 10 –1 10 –2 10 –1 40 60 80 100 100 VCC = 10V Ta = 25˚C 10 2 10 –4 – 40 – 20 20 IC — d 1 10 –1 0 Ambient temperature Ta (˚C ) tr — IC 10 3 10 VCE = 24V 40 0 – 40 – 20 10 2 10 80 tr td 90% 10% VCE = 10V Ta = 25˚C IF = 20mA IC (%) 0 IF = 30mA 120 80 Relative output current 0 – 40 – 20 10 Relative output current 10mA IC (mA) IF = 50mA 1.2 Collector current Forward voltage VF (V) Ta = 25˚C 60 Criterion 0 d 40 20 tf 1 Collector current IC (mA) 10 0 0 1 2 3 4 5 6 Distance d (mm) 3