SQJ410EP Datasheet

SQJ410EP
www.vishay.com
Vishay Siliconix
Automotive N-Channel 30 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• TrenchFET® Power MOSFET
30
RDS(on) () at VGS = 10 V
0.0039
RDS(on) () at VGS = 4.5 V
0.0042
ID (A)
• AEC-Q101 Qualifiedd
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
32
Configuration
Single
D
PowerPAK® SO-8L Single
m
5m
6.1
5.1
3m
m
G
D
4
G
S
3
S
S
2
S
1
N-Channel MOSFET
ORDERING INFORMATION
Package
PowerPAK SO-8L
Lead (Pb)-free and Halogen-free
SQJ410EP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
± 20
TC = 25 °C
Continuous Drain Currenta
TC = 125 °C
Continuous Source Current (Diode Conduction)a
Pulsed Drain Currentb
Single Pulse Avalanche Current
L = 0.1 mH
Single Pulse Avalanche Energy
TC = 25 °C
Maximum Power Dissipationb
TC = 125 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak
ID
32
32
IDM
128
IAS
58
EAS
168
TJ, Tstg
Temperature)e, f
V
32
IS
PD
UNIT
83
27
- 55 to + 175
260
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mountc
SYMBOL
LIMIT
RthJA
65
RthJC
1.8
UNIT
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
e. See Solder Profile (www.vishay.com/doc?73257). The PowerPAK SO-8L. The end of the lead terminal is exposed copper (not plated) as a
result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to
ensure adequate bottom side solder interconnection.
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S12-1860-Rev. C, 13-Aug-12
Document Number: 67003
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ410EP
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
30
-
-
1.5
2.0
2.5
VDS = 0 V, VGS = ± 20 V
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward
VGS = 0, ID = 250 μA
VDS = VGS, ID = 250 μA
IGSS
Zero Gate Voltage Drain Current
Transconductanceb
VDS
VGS(th)
RDS(on)
gfs
-
-
± 100
VGS = 0 V
VDS = 30 V
-
-
1
VGS = 0 V
VDS = 30 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 30 V, TJ = 175 °C
-
-
150
VGS = 10 V
VDS5 V
30
-
-
VGS = 10 V
ID = 10.3 A
-
0.0037
0.0039
VGS = 10 V
ID = 10.3 A, TJ = 125 °C
-
0.0045
0.0060
VGS = 10 V
ID = 10.3 A, TJ = 175 °C
-
0.0055
0.0070
VGS = 4.5 V
ID = 8.7 A
-
0.0035
0.0042
-
93
-
-
4965
6210
-
806
1010
-
325
410
VDS = 15 V, ID = 16 A
V
nA
μA
A

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Source-Drain Diode Ratings and
Rg
VGS = 0 V
VDS = 15 V, f = 1 MHz
VGS = 10 V
VDS = 15 V, ID = 15 A
f = 1 MHz
td(on)
tr
td(off)
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 10 V, Rg = 1 
tf
-
73.5
110
-
12.8
-
-
8.2
-
0.6
1.0
1.4
-
15
23
pF
nC

-
11
17
-
40
60
-
9
14
-
-
128
A
-
0.75
1.2
V
ns
Characteristicsb
Pulsed Currenta
ISM
Forward Voltage
VSD
IF = 10 A, VGS = 0
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S12-1860-Rev. C, 13-Aug-12
Document Number: 67003
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ410EP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
60
60
V GS = 10 V thru 4 V
48
ID - Drain Current (A)
ID - Drain Current (A)
48
36
24
12
36
24
T C = 25 °C
12
T C = 125 °C
V GS = 3 V
0
T C = - 55 °C
0
0
2
4
6
8
10
0
1
VDS - Drain-to-Source Voltage (V)
5
Transfer Characteristics
150
0.015
120
0.012
RDS(on) - On-Resistance (Ω)
g fs - Transconductance (S)
Output Characteristics
2
3
4
VGS - Gate-to-Source Voltage (V)
T C = - 55 °C
90
T C = 25 °C
60
T C = 125 °C
30
0.009
0.006
V GS = 4.5 V
0.003
V GS = 10 V
0
0
0
5
10
15
20
25
0
10
20
ID - Drain Current (A)
Transconductance
40
50
60
On-Resistance vs. Drain Current
10
7000
ID = 15 A
VGS - Gate-to-Source Voltage (V)
6000
Ciss
C - Capacitance (pF)
30
ID - Drain Current (A)
5000
4000
3000
2000
Coss
8
V DS = 15 V
6
4
2
1000
Crss
0
0
0
5
10
15
20
VDS - Drain-to-Source Voltage (V)
Capacitance
S12-1860-Rev. C, 13-Aug-12
25
30
0
20
40
60
80
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 67003
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ410EP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
100
ID = 15 A
1.7
10
V GS = 10 V
T J = 150 °C
IS - Source Current (A)
RDS(on) - On-Resistance (Normalized)
2.0
1.4
V GS = 4.5 V
1.1
1
T J = 25 °C
0.1
0.01
0.8
0.5
- 50
0.001
- 25
0
25
50
75
100
125
150
175
0
0.2
TJ - Junction Temperature (°C)
1.2
Source Drain Diode Forward Voltage
0.025
0.5
0.020
0.1
VGS(th) Variance (V)
RDS(on) - On-Resistance (Ω)
On-Resistance vs. Junction Temperature
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
0.015
0.010
- 0.3
ID = 5 mA
- 0.7
ID = 250 μA
T J = 150 °C
0.005
- 1.1
T J = 25 °C
0
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
- 1.5
- 50
10
- 25
0
25
50
75
100
125
150
175
TJ - Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
40
VDS - Drain-to-Source Voltage (V)
ID = 1 mA
38
36
34
32
30
- 50
- 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S12-1860-Rev. C, 13-Aug-12
Document Number: 67003
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ410EP
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
IDM Limited
I D - Drain Current (A)
100
100 µs
Limited by
RDS(on)*
1 ms
ID Limited
10
10 ms
100 ms, 1 s, 10 s, DC
1
0.1
TC = 25 °C
Single Pulse
BVDSS Limited
0.01
0.01
* VGS
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which R DS(on) is specified
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 65 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S12-1860-Rev. C, 13-Aug-12
Document Number: 67003
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ410EP
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 - 4
10 - 3
10 - 2
10 - 1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67003.
S12-1860-Rev. C, 13-Aug-12
Document Number: 67003
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ordering Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8L
Ordering codes for the SQ rugged series power MOSFETs in the PowerPAK SO-8L package:
DATASHEET PART NUMBER
OLD ORDERING CODE a
NEW ORDERING CODE
SQJ200EP
-
SQJ200EP-T1_GE3
SQJ202EP
-
SQJ202EP-T1_GE3
SQJ401EP
SQJ401EP-T1-GE3
SQJ401EP-T1_GE3
SQJ402EP
SQJ402EP-T1-GE3
SQJ402EP-T1_GE3
SQJ403EEP
SQJ403EEP-T1-GE3
SQJ403EEP-T1_GE3
SQJ403EP
-
SQJ403EP-T1_GE3
SQJ410EP
SQJ410EP-T1-GE3
SQJ410EP-T1_GE3
SQJ412EP
SQJ412EP-T1-GE3
SQJ412EP-T1_GE3
SQJ422EP
SQJ422EP-T1-GE3
SQJ422EP-T1_GE3
SQJ431EP
SQJ431EP-T1-GE3
SQJ431EP-T1_GE3
SQJ443EP
SQJ443EP-T1-GE3
SQJ443EP-T1_GE3
SQJ446EP
-
SQJ446EP-T1_GE3
SQJ456EP
SQJ456EP-T1-GE3
SQJ456EP-T1_GE3
SQJ459EP
-
SQJ459EP-T1_GE3
SQJ460AEP
-
SQJ460AEP-T1_GE3
SQJ461EP
SQJ461EP-T1-GE3
SQJ461EP-T1_GE3
SQJ463EP
SQJ463EP-T1-GE3
SQJ463EP-T1_GE3
SQJ465EP
SQJ465EP-T1-GE3
SQJ465EP-T1_GE3
SQJ469EP
SQJ469EP-T1-GE3
SQJ469EP-T1_GE3
SQJ486EP
SQJ486EP-T1-GE3
SQJ486EP-T1_GE3
SQJ488EP
SQJ488EP-T1-GE3
SQJ488EP-T1_GE3
SQJ500AEP
SQJ500AEP-T1-GE3
SQJ500AEP-T1_GE3
SQJ840EP
SQJ840EP-T1-GE3
SQJ840EP-T1_GE3
SQJ844AEP
SQJ844AEP-T1-GE3
SQJ844AEP-T1_GE3
SQJ850EP
SQJ850EP-T1-GE3
SQJ850EP-T1_GE3
SQJ858AEP
SQJ858AEP-T1-GE3
SQJ858AEP-T1_GE3
SQJ886EP
SQJ886EP-T1-GE3
SQJ886EP-T1_GE3
SQJ910AEP
SQJ910AEP-T1-GE3
SQJ910AEP-T1_GE3
SQJ912AEP
SQJ912AEP-T1-GE3
SQJ912AEP-T1_GE3
SQJ940EP
SQJ940EP-T1-GE3
SQJ940EP-T1_GE3
SQJ942EP
SQJ942EP-T1-GE3
SQJ942EP-T1_GE3
SQJ951EP
SQJ951EP-T1-GE3
SQJ951EP-T1_GE3
SQJ952EP
-
SQJ952EP-T1_GE3
SQJ956EP
SQJ956EP-T1-GE3
SQJ956EP-T1_GE3
SQJ960EP
SQJ960EP-T1-GE3
SQJ960EP-T1_GE3
SQJ963EP
SQJ963EP-T1-GE3
SQJ963EP-T1_GE3
SQJ968EP
SQJ968EP-T1-GE3
SQJ968EP-T1_GE3
SQJ980AEP
SQJ980AEP-T1-GE3
SQJ980AEP-T1_GE3
SQJ992EP
SQJ992EP-T1-GE3
SQJ992EP-T1_GE3
Note
a. Old ordering code is obsolete and no longer valid for new orders
Revision: 21-Oct-15
Document Number: 65804
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8L Case Outline
for Non-Al Parts
W
E1
E
E2
W2
W3
W1
b2
D2
b
b1
L
L1
L1
A1
e
θ
D1
D
b3
b4
0.25 gauge line
Topside view
Backside view (single)
E2
W2
C
A
W3
W1
F
K
D3
D3
D2
b3
b4
Backside view (dual)
Revision: 16-May-16
Document Number: 69003
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
DIM.
Vishay Siliconix
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
1.00
1.07
1.14
0.039
0.042
0.045
A1
0.00
-
0.127
0.00
-
0.005
b
0.33
0.41
0.48
0.013
0.016
0.019
b1
0.44
0.51
0.58
0.017
0.020
0.023
b2
4.80
4.90
5.00
0.189
0.193
0.197
b3
0.094
b4
0.004
0.47
0.019
c
0.20
0.25
0.30
0.008
0.010
0.012
D
5.00
5.13
5.25
0.197
0.202
0.207
D1
4.80
4.90
5.00
0.189
0.193
0.197
D2
3.86
3.96
4.06
0.152
0.156
0.160
D3
1.63
1.73
1.83
0.064
0.068
0.072
e
1.27 BSC
0.050 BSC
E
6.05
6.15
6.25
0.238
0.242
0.246
E1
4.27
4.37
4.47
0.168
0.172
0.176
E2
3.18
3.28
3.38
0.125
0.129
0.133
F
-
-
0.15
-
-
0.006
L
0.62
0.72
0.82
0.024
0.028
0.032
L1
0.92
1.07
1.22
0.036
0.042
0.048
K
0.51
0.020
W
0.23
0.009
W1
0.41
0.016
W2
2.82
0.111
W3
2.96
0.117

0°
-
10°
0°
-
10°
ECN: T16-0221-Rev. D, 16-May-16
DWG: 5976
Note
• Millimeters will gover
Revision: 16-May-16
Document Number: 69003
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PAD Pattern
www.vishay.com
Vishay Siliconix
RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L SINGLE
5.000
(0.197)
0.510
(0.020)
2.310
(0.091)
4.061
(0.160)
0.595
(0.023)
6.250
(0.246)
8.250
(0.325)
3.630
(0.143)
0.610
(0.024)
0.410
(0.016)
2.715
(0.107)
0.860
(0.034)
1.291
(0.051)
0.710
(0.028)
0.820
(0.032)
1.905
(0.075)
1.270
(0.050)
7.250
(0.285)
Recommended Minimum Pads
Dimensions in mm (inches)
Revision: 07-Feb-12
1
Document Number: 63818
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000