SiZF906DT

SiZF906DT
www.vishay.com
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode
FEATURES
PRODUCT SUMMARY
VDS (V)
Channel-1
30
Channel-2
30
RDS(on) () (MAX.)
• TrenchFET® Gen IV power MOSFET
• SkyFET® low-side MOSFET with integrated
Schottky
• 100 % Rg and UIS tested
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
ID (A) Qg (TYP.)
0.00380 at VGS = 10 V
60 a
0.00530 at VGS = 4.5 V
60 a
0.00117 at VGS = 10 V
60 a
0.00158 at VGS = 4.5 V
60 a
11 nC
46 nC
APPLICATIONS
VIN/D1
N-Channel 1
MOSFET
• CPU core power
GHS/G1
• Computer / server peripherals
• POL
G1Return/S1
VSW/S1-D2
• Synchronous buck converter
• Telecom DC/DC
Schottky
Diode
GLS/G2
Ordering Information:
SiZF906DT-T1-GE3 (lead (Pb)-free and halogen-free)
N-Channel 2
MOSFET
GND/S2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
CHANNEL-1
CHANNEL-2
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
+20, -16
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
60 a
60 a
60 a
27 b, c
52 b, c
21.7 b, c
41 b, c
80
100
31.6
60 a
3.7 b, c
4.1 b, c
ID
TA = 70 °C
Pulsed Drain Current (t = 100 μs)
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
IDM
TC = 25 °C
TA = 25 °C
L = 0.1 mH
IS
TC = 70 °C
TA = 25 °C
IAS
18
19
16
18
38
83
24
53
4.5 b, c
5 b, c
2.9 b, c
3.2 b, c
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
60 a
EAS
TC = 25 °C
Maximum Power Dissipation
V
TC = 70 °C
TA = 25 °C
UNIT
TJ, Tstg
A
mJ
W
-55 to +150
Soldering Recommendations (Peak Temperature) d, e
°C
260
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient b, f
Maximum Junction-to-Case (Source)
SYMBOL
CHANNEL-1
CHANNEL-2
TYP.
MAX.
TYP.
MAX.
t  10 s
RthJA
22
28
20
25
Steady State
RthJC
2.6
3.3
1.2
1.5
UNIT
°C/W
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 60 °C/W for channel-1 and 60 °C/W for channel-2.
S16-0742 Rev. A, 19-Apr-16
Document Number: 67547
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiZF906DT
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
Ch-1
30
-
-
Ch-2
30
-
-
Ch-1
1.1
-
2.2
Ch-2
1.1
-
2.2
Ch-1
-
-
± 100
Ch-2
-
-
± 100
Ch-1
-
-
1
Ch-2
-
50
250
Ch-1
-
-
5
Ch-2
-
300
3000
Ch-1
20
-
-
Ch-2
20
-
-
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS = 0 V, ID = 250 μA
VGS(th)
VDS = VGS, ID = 250 μA
IGSS
VDS = 0 V, VGS = +20 V, -16 V
VDS = 30 V, VGS = 0 V
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V, TJ = 55 °C
On-State Drain Current b
Drain-Source On-State Resistance b
Forward Transconductance b
ID(on)
RDS(on)
gfs
VDS  5 V, VGS = 10 V
VGS = 10 V, ID = 15 A
Ch-1
-
0.00300 0.00380
VGS = 10 V, ID = 20 A
Ch-2
-
0.00090 0.00117
VGS = 4.5 V, ID = 10 A
Ch-1
-
0.00400 0.00530
VGS = 4.5 V, ID = 15 A
Ch-2
-
0.00120 0.00158
VDS = 10 V, ID = 15 A
Ch-1
-
VDS = 10 V, ID = 20 A
Ch-2
130
-
130
-
-
V
nA
μA
A

S
Dynamic a
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Channel-1
VDS = 15 V, VGS = 0 V, f = 1 MHz
Channel-2
VDS = 15 V, VGS = 0 V, f = 1 MHz
Crss/Ciss Ratio
Qg
Gate-Drain Charge
Output Charge
Gate Resistance
S16-0742 Rev. A, 19-Apr-16
2000
Ch-2
-
8200
-
Ch-1
-
680
-
Ch-2
-
3700
-
Ch-1
-
50
-
Ch-2
-
260
-
Ch-1
-
0.025
0.050
Qgs
Qgd
Qoss
Rg
0.033
0.070
Ch-1
-
24.5
49
Ch-2
-
100
200
11
22
46
92
Ch-1
Channel-1
VDS = 15 V, VGS = 4.5 V, ID = 20 A
Gate-Source Charge
-
Ch-2
VDS = 15 V, VGS = 10 V, ID = 20 A
Total Gate Charge
Ch-1
Channel-2
VDS = 15 V, VGS = 4.5 V, ID = 20 A
VDS = 15 V, VGS = 0 V
f = 1 MHz
Ch-2
-
Ch-1
-
5.1
-
Ch-2
-
17.1
-
Ch-1
-
1.3
-
Ch-2
-
7.2
-
Ch-1
-
21
-
Ch-2
-
96
-
Ch-1
0.2
1
2
Ch-2
0.12
0.6
1.2
pF
nC

Document Number: 67547
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiZF906DT
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
Ch-1
-
20
40
Ch-2
-
45
90
Ch-1
-
80
160
Ch-2
-
60
120
Ch-1
-
20
40
Ch-2
-
65
130
Ch-1
-
40
80
Ch-2
-
30
60
Ch-1
-
10
20
Ch-2
-
15
30
Ch-1
-
35
70
Ch-2
-
20
40
Ch-1
-
20
40
Ch-2
-
40
80
Ch-1
-
10
20
Ch-2
-
10
20
Ch-1
-
-
31.6
Ch-2
-
-
60
Ch-1
-
-
80
Ch-2
-
-
100
IS = 10 A, VGS = 0 V
Ch-1
-
0.8
1.2
IS = 3 A, VGS = 0 V
Ch-2
-
0.39
0.59
Ch-1
-
35
90
Ch-2
-
70
140
Ch-1
-
20
40
Ch-2
-
105
210
Ch-1
-
15
-
Ch-2
-
37
-
Ch-1
-
20
-
Ch-2
-
33
-
UNIT
Dynamic a
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
Channel-1
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 4.5 V, Rg = 1 
Channel-2
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 4.5 V, Rg = 1 
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
Channel-1
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 10 V, Rg = 1 
Channel-2
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 10 V, Rg = 1 
tf
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Current
Pulse Diode Forward Current
a
Body Diode Voltage
IS
ISM
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
TC = 25 °C
Channel-1
IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C
Channel-2
IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C
tb
A
V
ns
nC
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-0742 Rev. A, 19-Apr-16
Document Number: 67547
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiZF906DT
www.vishay.com
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
100
100
10000
10000
VGS = 10 V thru 4 V
40
VGS = 3 V
100
20
1000
60
1st line
2nd line
1000
60
2nd line
ID - Drain Current (A)
80
1st line
2nd line
TC = 25 °C
40
100
20
TC = 125 °C
0
0
0.5
1
1.5
2
2.5
3
10
0
1
2
4
VGS - Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
Axis Title
Axis Title
10000
3000
10000
0.007
0.005
VGS = 4.5 V
0.004
0.003
100
VGS = 10 V
0.002
Ciss
1000
2000
1500
Coss
1000
100
500
0.001
0
20
40
60
80
Crss
0
10
0
100
10
0
5
10
25
On-Resistance vs. Drain Current
Capacitance
Axis Title
1000
1st line
2nd line
VDS = 15 V
VDS = 24 V
VDS = 7.5 V
100
2
0
10
10
15
20
25
2nd line
RDS(on) - On-Resistance (Normalized)
ID = 20 A
8
5
30
1.6
10000
0
20
VDS - Drain-to-Source Voltage (V)
2nd line
Axis Title
4
15
ID - Drain Current (A)
2nd line
10
6
1st line
2nd line
1000
2nd line
C - Capacitance (pF)
2500
0.006
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
3
VDS - Drain-to-Source Voltage (V)
2nd line
0.008
2nd line
VGS - Gate-to-Source Voltage (V)
TC = -55 °C
0
10
10000
ID = 15 A
VGS = 10 V
1.4
1000
1.2
VGS = 4.5 V
1.0
100
0.8
0.6
10
-50
-25
0
25
50
75
100 125 150
Qg - Total Gate Charge (nC)
2nd line
TJ - Junction Temperature (°C)
2nd line
Gate Charge
On-Resistance vs. Junction Temperature
S16-0742 Rev. A, 19-Apr-16
1st line
2nd line
2nd line
ID - Drain Current (A)
80
Document Number: 67547
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiZF906DT
www.vishay.com
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
100
0.020
10000
10000
1000
TJ = 25 °C
1
100
1000
0.012
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
TJ = 150 °C
10
1st line
2nd line
2nd line
IS - Source Current (A)
ID = 15 A
0.016
0.008
100
TJ = 125 °C
0.004
TJ = 25 °C
0.1
0.000
10
0
0.2
0.4
0.6
0.8
1.0
10
0
1.2
2
4
8
10
VSD - Source-to-Drain Voltage (V)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Axis Title
Axis Title
50
10000
2.0
1.8
10000
40
1000
1000
1.4
1.2
30
1st line
2nd line
2nd line
Power (W)
1.6
1st line
2nd line
2nd line
VGS(th) (V)
6
20
100
ID = 250 μA
100
10
1.0
0.8
10
-50
-25
0
25
50
75
0
0.0001 0.001 0.01
100 125 150
0.1
1
10
100
10
1000
TJ - Temperature (°C)
2nd line
Time (s)
2nd line
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
Axis Title
1000
10000
Limited by RDS(on) (1)
1000
10
1 ms, 100μs
10 ms
100 ms 100
1s
10 s
DC
1
0.1
TA = 25 °C
Single pulse
0.01
1st line
2nd line
2nd line
ID - Drain Current (A)
100
10
0.1
(1)
1
10
100
VDS - Drain-to-Source Voltage (V)
VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
S16-0742 Rev. A, 19-Apr-16
Document Number: 67547
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiZF906DT
www.vishay.com
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
100
50
10000
40
1000
40
30
1st line
2nd line
Package limited
2nd line
Power (W)
1000
60
1st line
2nd line
2nd line
ID - Drain Current (A)
80
10000
20
100
20
100
10
0
10
0
25
50
75
100
125
150
0
10
0
25
50
75
100
125
TC - Case Temperature (°C)
2nd line
TC - Case Temperature (°C)
2nd line
Current Derating a
Power, Junction-to-Case
150
Note
a. The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S16-0742 Rev. A, 19-Apr-16
Document Number: 67547
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiZF906DT
www.vishay.com
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
10000
1
0.2
Notes:
1000
0.1
0.1
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
PDM
0.05
t1
0.02
t2
t
1. Duty cycle, D = t1
2
2. Per unit base = RthJA = 60 °C/W
Single pulse
3. TJM - TA = PDMZthJA
100
(t)
4. Surface mounted
0.01
0.0001
0.001
0.01
0.1
1
10
100
10
1000
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title
10000
Duty Cycle = 0.5
0.2
0.1
1000
Single pulse
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
1
100
0.1
0.0001
10
0.001
0.01
0.1
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Case
S16-0742 Rev. A, 19-Apr-16
Document Number: 67547
7
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiZF906DT
www.vishay.com
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
100
100
10000
10000
VGS = 10 V thru 3 V
40
100
20
1000
TC = 25 °C
60
1st line
2nd line
1000
60
2nd line
ID - Drain Current (A)
80
1st line
2nd line
2nd line
ID - Drain Current (A)
80
40
100
TC = -55 °C
TC = 125 °C
20
VGS = 2 V
0
0
10
0
0.5
1
1.5
2
2.5
3
10
0
1
2
VGS - Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
Axis Title
Axis Title
10000
10000
12000
0.001
VGS = 10 V
100
0.0008
9000
Ciss
1000
6000
1st line
2nd line
1000
2nd line
C - Capacitance (pF)
VGS = 4.5 V
0.0012
1st line
2nd line
Coss
100
3000
Crss
0.0006
0
10
0
20
40
60
80
100
10
0
5
10
On-Resistance vs. Drain Current
Capacitance
Axis Title
1000
1st line
2nd line
VDS = 15 V
VDS = 24 V
VDS = 7.5 V
100
2
0
10
40
60
80
100
2nd line
RDS(on) - On-Resistance (Normalized)
ID = 20 A
8
20
30
1.6
10000
0
25
VDS - Drain-to-Source Voltage (V)
2nd line
Axis Title
4
20
ID - Drain Current (A)
2nd line
10
6
15
10000
ID = 20 A
VGS = 10 V
1.4
1000
1.2
VGS = 4.5 V
1.0
100
0.8
0.6
10
-50
-25
0
25
50
75
100 125 150
Qg - Total Gate Charge (nC)
2nd line
TJ - Junction Temperature (°C)
2nd line
Gate Charge
On-Resistance vs. Junction Temperature
S16-0742 Rev. A, 19-Apr-16
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
4
VDS - Drain-to-Source Voltage (V)
2nd line
0.0014
2nd line
VGS - Gate-to-Source Voltage (V)
3
Document Number: 67547
8
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiZF906DT
www.vishay.com
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
100
0.006
10000
10000
ID = 20 A
1st line
2nd line
1000
TJ = 25 °C
1
100
0.004
1000
1st line
2nd line
10
2nd line
RDS(on) - On-Resistance (Ω)
2nd line
IS - Source Current (A)
TJ = 150 °C
0.002
100
TJ = 125 °C
TJ = 25 °C
0.1
0.000
10
0
0.2
0.4
0.6
0.8
1.0
10
0
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Axis Title
Axis Title
10-1
10000
40
10000
10-2
20 V
1st line
2nd line
10-4
1000
2nd line
Power (W)
10-3
1st line
2nd line
IR (A)
d line
30
1000
30 V
20
100
100
10
10
-5
10-6
0
0.0001 0.001 0.01
10
0
25
50
75
100
125
150
0.1
1
10
100
10
1000
Time (s)
2nd line
TJ - Temperature (°C)
2nd line
Reverse Current (Schottky)
Single Pulse Power, Junction-to-Ambient
Axis Title
1000
10000
Limited by RDS(on) (1)
1000
10
1 ms, 100μs
10 ms
100 ms 100
1s
10 s
DC
1
0.1
TA = 25 °C
Single pulse
0.01
0.01
(1)
1st line
2nd line
2nd line
ID - Drain Current (A)
100
10
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
S16-0742 Rev. A, 19-Apr-16
Document Number: 67547
9
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiZF906DT
www.vishay.com
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
10000
80
150
1000
Package limited
60
1st line
2nd line
100
2nd line
Power (W)
1000
1st line
2nd line
2nd line
ID - Drain Current (A)
100
10000
200
40
100
50
100
20
0
10
0
25
50
75
100
125
150
0
10
0
25
50
75
100
125
TC - Case Temperature (°C)
2nd line
TC - Case Temperature (°C)
2nd line
Current Derating a
Power, Junction-to-Case
150
Note
a. The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S16-0742 Rev. A, 19-Apr-16
Document Number: 67547
10
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiZF906DT
www.vishay.com
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
10000
1
0.2
Notes:
1000
0.1
0.1
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
PDM
0.05
0.02
t1
t2
t
1. Duty cycle, D = t1
2
2. Per unit base = RthJA = 60 °C/W
Single pulse
3. TJM - TA = PDMZthJA
100
(t)
4. Surface mounted
0.01
0.0001
0.001
0.01
0.1
1
10
100
10
1000
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title
10000
Duty Cycle = 0.5
0.2
0.1
1000
Single pulse
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
1
100
0.1
0.0001
10
0.001
0.01
0.1
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67547.
S16-0742 Rev. A, 19-Apr-16
Document Number: 67547
11
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
Vishay
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Revision: 02-Oct-12
1
Document Number: 91000