SIZ790DT-T1-GE3

New Product
SiZ790DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFETs with Schottky Diode
FEATURES
PRODUCT SUMMARY
VDS (V)
Channel-1
30
Channel-2
30
RDS(on) ()
ID (A)
0.0093 at VGS = 10 V
16a
0.0130 at VGS = 4.5 V
16a
0.0047 at VGS = 10 V
35a
0.0059 at VGS = 4.5 V
35a
PowerPAIR®
G1
1
D1
2
D1
17 nC
• Halogen-free According to IEC 61249-2-21
Definition
• SkyFET® Monolithic TrenchFET®
Power MOSFETs and Schottky Diode
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
D1
• System Power
- Notebook
- Server
• POL
• Synchronous Buck
Converter
3.73 mm
D1
3
G1
N-Channel 1
MOSFET
S1/D2
Pin 7
G2
S2
5
7.7 nC
6 x 3.7
Pin 1
6
Qg (Typ.)
Schottky
Diode
G2
6 mm
S2
S1/D2
N-Channel 2
MOSFET
4
S2
Ordering Information: SiZ790DT-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
Continuous Source Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
Unit
V
a
16
16a
35
35a
12.9b, c
10.3b, c
70
16a
23.4b, c
18.7b, c
100
3.2
16
13
27
17
35a
3.8b, c
30
45
48
31
3.9b, c
2.5b, c
4.6b, c
3b, c
b, c
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
Channel-2
30
± 20
a
IDM
Pulsed Drain Current (t = 300 µs)
Channel-1
A
mJ
W
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Channel-1
Parameter
b, f
t  10 s
Symbol
RthJA
RthJC
Channel-2
Typ.
Max.
Typ.
Max.
24
3.5
32
4.6
20
2
27
2.6
Unit
Maximum Junction-to-Ambient
°C/W
Maximum Junction-to-Case (Drain)
Steady State
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 67 °C/W for channel-1 and 65 °C/W for channel-2.
Document Number: 67669
S11-2380-Rev. B, 28-Nov-11
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1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ790DT
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Source Leakage
VDS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
Ch-1
30
VGS = 0 V, ID = 250 µA
Ch-2
30
VDS = VGS, ID = 250 µA
Ch-1
1
VDS = VGS, ID = 250 µA
Ch-2
1.1
VDS = 0 V, VGS = ± 20 V
VDS = 30 V, VGS = 0 V
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
IDSS
ID(on)
RDS(on)
gfs
2.2
V
2.2
Ch-1
± 100
Ch-2
± 100
Ch-1
1
VDS = 30 V, VGS = 0 V
Ch-2
VDS = 30 V, VGS = 0 V, TJ = 55 °C
Ch-1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
Ch-2
VDS 5 V, VGS = 10 V
Ch-1
15
VDS 5 V, VGS = 10 V
Ch-2
20
VGS = 10 V, ID = 15 A
Ch-1
0.0075 0.0093
VGS = 10 V, ID = 20 A
Ch-2
0.0038 0.0047
VGS = 4.5 V, ID = 13 A
Ch-1
0.0105 0.0130
VGS = 4.5 V, ID = 20 A
Ch-2
0.0048 0.0059
VDS = 15 V, ID = 15 A
Ch-1
48
VDS = 15 V, ID = 20 A
Ch-2
85
50
200
5
140
nA
µA
1400
A

S
Dynamica
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Crss
Qg
Channel-1
VDS = 15 V, VGS = 0 V, f = 1 MHz
Channel-2
VDS = 10 V, VGS = 0 V, f = 1 MHz
Rg
830
Ch-2
1980
Ch-1
185
Ch-2
455
pF
Ch-1
80
Ch-2
165
VDS = 15 V, VGS = 10 V, ID = 15 A
Ch-1
15.6
24
VDS = 15 V, VGS = 10 V, ID = 20 A
Ch-2
36
54
Ch-1
7.7
12
26
Channel-1
VDS = 15 V, VGS = 4.5 V, ID = 15 A
Ch-2
17
Ch-1
2.6
Channel-2
VDS = 15 V, VGS = 4.5 V, ID = 20 A
Ch-2
5.7
Ch-1
3
Qgs
Qgd
Ch-1
Ch-2
f = 1 MHz
nC
5
Ch-1
0.2
1
2
Ch-2
0.2
0.9
1.8

Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width  300 µs, duty cycle  2 %.
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Document Number: 67669
S11-2380-Rev. B, 28-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ790DT
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Ch-1
10
20
Ch-2
20
40
Ch-1
15
30
Ch-2
15
30
Ch-1
15
30
Ch-2
25
50
Ch-1
7
15
Unit
Dynamica
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
td(on)
tr
Channel-1
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 4.5 V, Rg = 1 
Channel-2
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 4.5 V, Rg = 1 
Channel-1
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 10 V, Rg = 1 
tf
Channel-2
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 10 V, Rg = 1 
IS
TC = 25 °C
td(off)
Ch-2
10
20
Ch-1
5
10
Ch-2
10
20
Ch-1
15
30
Ch-2
10
20
Ch-1
17
35
Ch-2
25
50
Ch-1
7
15
Ch-2
10
20
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
Body Diode Voltage
Body Diode Reverse Recovery Time
ISM
VSD
Ch-1
16
Ch-2
35
Ch-1
70
Ch-2
100
IS = 10 A, VGS = 0 V
Ch-1
0.8
1.2
IS = 2 A, VGS = 0 V
Ch-2
0.38
0.48
Ch-1
15
30
Ch-2
20
40
Ch-1
6
12
Ch-2
15
32
trr
Body Diode Reverse Recovery Charge
Qrr
Channel-1
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Fall Time
ta
Channel-2
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
A
Ch-1
9
Ch-2
10.5
Ch-1
6
Ch-2
9.5
V
ns
nC
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width  300 µs, duty cycle  2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 67669
S11-2380-Rev. B, 28-Nov-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ790DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
70
20
VGS = 10 V thru 4 V
60
50
ID - Drain Current (A)
ID - Drain Current (A)
16
40
30
VGS = 3 V
20
12
TC = 25 °C
8
TC = 125 °C
4
10
0
0.0
0.5
1.0
1.5
2.0
0.0
0.5
1.0
1.5
2.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.014
2.5
3.0
25
30
1200
1000
C - Capacitance (pF)
0.012
RDS(on) - On-Resistance (Ω)
TC = - 55 °C
0
VGS = 4.5 V
0.010
VGS = 10 V
0.008
0.006
Ciss
800
600
400
Coss
200
Crss
0.004
0
0
10
20
30
40
50
60
0
70
5
10
20
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
Capacitance
On-Resistance vs. Drain Current
10
1.8
ID = 15.2 A
1.6
6
VDS = 15 V
VDS = 24 V
4
VGS = 10 V
ID = 15 A
VDS = 7.5 V
8
RDS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
15
VGS = 4.5 V
1.4
1.2
1.0
2
0.8
0
0
3
6
9
12
Qg - Total Gate Charge (nC)
Gate Charge
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4
15
18
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 67669
S11-2380-Rev. B, 28-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ790DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.030
100
ID = 15 A
0.025
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
TJ = 150 °C
10
TJ = 25 °C
1
0.020
0.015
TJ = 125 °C
0.010
TJ = 25 °C
0.005
0.1
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
50
2.0
1.8
40
Power (W)
VGS(th) (V)
1.6
1.4
ID = 250 μA
1.2
20
10
1.0
0.8
- 50
30
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
10
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power
100
1000
1000
ID - Drain Current (A)
100
Limited by RDS(on)*
10
100 μs
1 ms
1
0.1
10 ms
100 ms
1s
10 s
DC
TA = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 67669
S11-2380-Rev. B, 28-Nov-11
www.vishay.com
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ790DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
50
30
25
20
30
Power (W)
ID - Drain Current (A)
40
20
15
10
Package Limited
10
5
0
0
0
25
50
75
100
125
150
25
50
75
100
125
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating*
Power, Junction-to-Case
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
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Document Number: 67669
S11-2380-Rev. B, 28-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ790DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 67 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
0.0001
0.001
4. Surface Mounted
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
0.0001
0.001
0.01
0.1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Document Number: 67669
S11-2380-Rev. B, 28-Nov-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ790DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
100
VGS = 10 V thru 4 V
16
ID - Drain Current (A)
ID - Drain Current (A)
80
VGS = 3 V
60
40
12
TC = 25 °C
8
20
4
0
0
TC = 125 °C
TC = - 55 °C
0.0
0.5
1.0
1.5
0.0
2.0
1.5
2.0
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2.5
3.0
25
30
2500
Ciss
0.0055
2000
0.0050
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
1.0
VDS - Drain-to-Source Voltage (V)
0.0060
VGS = 4.5 V
0.0045
VGS = 10 V
0.0040
1500
1000
Coss
500
0.0035
Crss
0
0.0030
0
20
40
60
80
0
100
5
10
15
20
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
10
1.8
ID = 20 A
VDS = 7.5 V
ID = 20 A
VGS = 10 V
1.6
8
RDS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
0.5
6
VDS = 15 V
VDS = 24 V
4
1.4
VGS = 4.5 V
1.2
1.0
2
0.8
0
0
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8
10
20
30
40
0.6
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
150
Document Number: 67669
S11-2380-Rev. B, 28-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ790DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.010
ID = 20 A
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
TJ = 150 °C
10
TJ = 25 °C
1
0.008
TJ = 125 °C
0.006
0.004
TJ = 25 °C
0.002
0.1
0.0
0.000
0.2
0.4
0.6
0.8
1.0
0
4
6
8
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source
1.E-01
10
50
1.E-02
VR = 30 V
1.E-03
40
VR = 20 V
Power (W)
IR - Reverse Current (A)
2
VSD - Source-to-Drain Voltage (V)
1.E-04
1.E-05
30
20
1.E-06
10
VR = 10 V
1.E-07
1.E-08
- 50
- 25
0
25
50
75
100
125
0
0.01
150
0.1
TJ - Temperature (°C)
1
10
100
1000
Time (s)
Reverse Current vs. Junction Temperature
Single Pulse Power
1000
ID - Drain Current (A)
100
Limited by RDS(on)*
100 μs
10
1 ms
10 ms
1
100 ms
0.1
1s
10 s
TA = 25 °C
Single Pulse
DC
BVDSS Limited
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 67669
S11-2380-Rev. B, 28-Nov-11
www.vishay.com
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ790DT
Vishay Siliconix
100
50
80
40
60
30
Power (W)
ID - Drain Current (A)
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Package Limited
40
20
20
10
0
0
0
25
50
75
100
125
150
25
50
75
100
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating*
Power, Junction-to-Case
125
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
10
Document Number: 67669
S11-2380-Rev. B, 28-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ790DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 65 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
0.0001
4. Surface Mounted
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
0.0001
0.001
0.01
0.1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67669.
Document Number: 67669
S11-2380-Rev. B, 28-Nov-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
PowerPAIRTM 6 x 3.7 CASE OUTLINE
A
D
0.10 C
2X
Pin 5
K2
K2
Pin 4
Pin 4
Pin 5
Pin 6
K
L
Pin 6
E
E1
D1
K1
Pin #1 Ident
(Optional)
Pin 1
Pin 2
0.10 C
Pin 3
Pin 2
Pin 3
2X
E2
D1
Pin 1
e
b
BACK SIDE VIEW
b1
C
A1
C
A
0.08
c
0.10 C
Z
Z
MILLIMETERS
INCHES
DIM.
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.70
0.75
0.80
0.028
0.030
0.032
A1
0.00
-
0.05
0.000
-
0.002
b
0.46
0.51
0.56
0.018
0.020
0.022
b1
0.20
0.25
0.38
0.008
0.010
0.015
C
0.18
0.20
0.23
0.007
0.008
0.009
D
3.65
3.73
3.81
0.144
0.147
0.150
D1
2.41
2.53
2.65
0.095
0.100
0.104
E
5.92
6.00
6.08
0.233
0.236
0.239
E1
2.62
2.67
2.72
0.103
0.105
0.107
E2
0.87
0.92
0.97
0.034
0.036
0.038
e
1.27 BSC
0.05 BSC
K
0.45 TYP.
0.018 TYP.
K1
0.66 TYP.
0.026 TYP.
K2
L
0.60 TYP.
0.38
0.43
0.024 TYP.
0.48
0.015
0.017
0.019
ECN: S-82772-Rev. B, 17-Nov-08
DWG: 5979
Document Number: 69028
17-Nov-08
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1
PAD Pattern
Vishay Siliconix
RECOMMENDED PAD FOR PowerPAIR™ 6 x 3.7
0.3520
(8.941)
0.0220
(0.559)
0.0190
(0.483)
0, 0.11
0.0170
(0.432)
0, 0.03
0.1070
(2.718)
0.1040
(2.642)
0.4390
(11.151)
0, 0
0.0220
(0.559)
0, - 0.0645
0.0170
(0.432)
0.0380
(0.965)
- 0.05, - 0.11
0, - 0.11
1
0.0500
(1.27)
Recommended PAD for PowerPAIR 6 x 3.7
Dimensions in inches (mm)
Keep-out 0.3520 (8.94) x 0.4390 (11.151)
Document Number: 65278
Revision: 04-Aug-09
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1
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000