SiB441EDK Datasheet

New Product
SiB441EDK
Vishay Siliconix
P-Channel 12-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 12
RDS(on) () Max.
ID (A)
0.0255 at VGS = - 4.5 V
- 9a
0.0280 at VGS = - 3.7 V
- 9a
0.0360 at VGS = - 2.5 V
- 9a
0.0600 at VGS = - 1.8 V
a
-9
0.1150 at VGS = - 1.5 V
-2
PowerPAK SC-75-6L-Single
Qg (Typ.)
13.4 nC
S
D
2
D
3
6
G
G
5
Marking Code
S
D
1.60 mm
APPLICATIONS
• Portable Devices such as Smart Phones, Tablet PCs and
Mobile Computing
- Battery Switch
- Load Switch
- Power Management
1
D
• TrenchFET® Power MOSFET
• Thermally Enhanced PowerPAK®
SC-75 Package
- Small Footprint Area
- Low On-Resistance
• Typical ESD Performance 2500 V
• 100 % Rg Tested
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
S
1.60 mm
BOX
4
Part # code
XXX
D
Ordering Information:
SiB441EDK-T1-GE3 (Lead (Pb)-free and Halogen-free)
Lot Traceability
and Date code
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Limit
- 12
±8
Continuous Source-Drain Diode Current
Maximum Power Dissipation
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
V
9a
- 9a
- 8.3b, c
- 6.6b, c
- 40
- 9a
ID
IDM
Pulsed Drain Current (t = 300 µs)
Unit
IS
- 2b, c
13
8.4
PD
2.4b, c
1.6b, c
- 55 to 150
260
TJ, Tstg
Soldering Recommendations (Peak Temperature)d, e
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t5s
Steady State
Symbol
RthJA
RthJC
Typical
41
7.5
Maximum
51
9.5
Unit
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 105 °C/W.
Document Number: 62821
S13-0197-Rev. A, 28-Jan-13
For technical questions, contact: [email protected]
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiB441EDK
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 12
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
Gate-Source Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State
Resistancea
a
- 0.4
- 0.9
VDS = 0 V, VGS = ± 8 V
±4
VDS = 0 V, VGS = ± 4.5 V
±1
VDS = - 12 V, VGS = 0 V
-1
VDS - 5 V, VGS = - 4.5 V
RDS(on)
mV/°C
2.7
VDS = - 12 V, VGS = 0 V, TJ = 55 °C
gfs
Forward Transconductance
-5
ID = - 250 µA
VDS = VGS, ID = - 250 µA
V
V
µA
- 10
- 15
A
VGS = - 4.5 V, ID = - 4 A
0.0210
0.0255
VGS = - 3.7 V, ID = - 4 A
0.0230
0.0280
VGS = - 2.5 V, ID = - 2 A
0.0290
0.0360
VGS = - 1.8 V, ID = - 2 A
0.0420
0.0600
VGS = - 1.5 V, ID = - 0.5 A
0.0570
0.1150
VDS = - 6 V, ID = - 4 A
17

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
1180
VDS = - 6 V, VGS = 0 V, f = 1 MHz
250
VDS = - 6 V, VGS = - 8 V, ID = - 2.1 A
VDS = - 6 V, VGS = - 4.5 V, ID = - 2.1 A
f = 1 MHz
td(on)
Turn-On Delay Time
VDD = - 6 V, RL = 2.7 
ID  - 2.2 A, VGEN = - 4.5 V, Rg = 1 
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
1.6
2.2
11
22
22
45
42
85
60
120
50
100
td(on)
7
15
VDD = - 6 V, RL = 2.7 
ID  - 2.2 A, VGEN = - 8 V, Rg = 1 
td(off)
tf
Fall Time
33
20
tf
tr
Rise Time
Turn-Off Delay Time
22.1
13.4
nC
3.4
Rg
Gate Resistance
pF
265
10
20
60
120
52
100

ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
TC = 25 °C
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
-9
- 40
IS = - 2.2 A, VGS = 0 V
IF = - 2.2 A, dI/dt = 100 A/µs, TJ = 25 °C
A
- 0.85
- 1.2
V
30
60
ns
12
25
nC
9
11
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 62821
S13-0197-Rev. A, 28-Jan-13
For technical questions, contact: [email protected]
www.vishay.com
2
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiB441EDK
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10-1
30.00
10-2
25.00
IGSS - Gate Current (A)
IGSS - Gate Current (mA)
10-3
20.00
TJ = 25 °C
15.00
10.00
10-4
TJ = 150 °C
10-5
10-6
TJ = 25 °C
10-7
5.00
10-8
10-9
0.00
0
4
8
12
0
16
4
8
12
16
VGS - Gate-to-Source Voltage (V)
VGS - Gate-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
40
10
VGS = 5 V thru 3 V
ID - Drain Current (A)
ID - Drain Current (A)
8
VGS = 2.5 V
30
20
VGS = 2 V
6
4
TC = 25 °C
10
TC = 125 °C
2
VGS = 1.5 V
TC = - 55 °C
0
0
0.0
0.5
1.0
1.5
2.0
2.5
0.0
3.0
0.5
1.0
1.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2.0
2000
0.150
VGS = 1.5 V
1600
Ciss
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
0.120
VGS = 1.8 V
0.090
VGS = 2.5 V
0.060
VGS = 3.7 V
0.030
1200
800
Coss
400
Crss
VGS = 4.5 V
0
0.000
0
10
20
30
ID - Drain Current (A)
40
0
2
4
8
10
12
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Document Number: 62821
S13-0197-Rev. A, 28-Jan-13
6
For technical questions, contact: [email protected]
Capacitance
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiB441EDK
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
8
VGS - Gate-to-Source Voltage (V)
ID = 2.1 A
RDS(on) - On-Resistance (Normalized)
1.4
VDS = 6 V
6
VDS = 3 V
4
VDS = 9.6 V
2
0
VGS = 4.5 V, 3.7 V, 2.5 V
1.3
ID = 4 A
VGS = 1.8 V
1.2
VGS = 1.5 V
1.1
1.0
0.9
0.8
0
5
10
15
20
25
- 50
- 25
0
Gate Charge
50
75
100
125
150
On-Resistance vs. Junction Temperature
100
0.160
ID = 4 A
RDS(on) - On-Resistance (Ω)
TJ = 150 °C
IS - Source Current (A)
25
TJ - Junction Temperature (°C)
Qg - Total Gate Charge (nC)
10
TJ = 25 °C
1
0.1
0.120
0.080
TJ = 125 °C
0.040
TJ = 25 °C
0.000
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
VSD - Source-to-Drain Voltage (V)
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Soure-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.8
20
0.7
15
Power (W)
VGS(th) (V)
0.6
0.5
ID = 250 μA
10
0.4
5
0.3
0.2
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
10
100
1000
TJ - Temperature (°C)
Pulse (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
Document Number: 62821
S13-0197-Rev. A, 28-Jan-13
For technical questions, contact: [email protected]
www.vishay.com
4
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiB441EDK
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
Limited by RDS(on)*
ID - Drain Current (A)
10
100 µs
1 ms
1
10 ms
0.1
100 ms
10 s
1s
DC
TA = 25 °C
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
20
15
16
12
Power (W)
ID - Drain Current (A)
Safe Operating Area, Junction-to-Ambient
12
Package Limited
8
4
9
6
3
0
0
0
25
50
75
100
TC - Case Temperature (°C)
125
150
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 62821
S13-0197-Rev. A, 28-Jan-13
For technical questions, contact: [email protected]
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiB441EDK
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
PDM
0.05
t1
0.02
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 105 °C/W
Single Pulse
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62821.
Document Number: 62821
S13-0197-Rev. A, 28-Jan-13
For technical questions, contact: [email protected]
www.vishay.com
6
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
b
e
PIN1
b
e
PIN3
PIN2
PIN1
PIN3
PIN6
K3
PIN5
E1
E1
K
K
D1
D1
D1
E3
E1
D2
K
E2 K4
L
PIN2
L
PowerPAK® SC75-6L
PIN6
K2
PIN4
K1
K2
BACKSIDE VIEW OF SINGLE
PIN5
K1
PIN4
K2
BACKSIDE VIEW OF DUAL
D
A
E
Notes:
1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating
C
A1
Z
z
DETAIL Z
SINGLE PAD
DIM
A
MILLIMETERS
DUAL PAD
INCHES
MILLIMETERS
INCHES
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
0.675
0.75
0.80
0.027
0.030
0.032
0.675
0.75
0.80
0.027
0.030
0.032
A1
0
-
0.05
0
-
0.002
0
-
0.05
0
-
0.002
b
0.18
0.25
0.33
0.007
0.010
0.013
0.18
0.25
0.33
0.007
0.010
0.013
C
0.15
0.20
0.25
0.006
0.008
0.010
0.15
0.20
0.25
0.006
0.008
0.010
D
1.53
1.60
1.70
0.060
0.063
0.067
1.53
1.60
1.70
0.060
0.063
0.067
D1
0.57
0.67
0.77
0.022
0.026
0.030
0.34
0.44
0.54
0.013
0.017
0.021
D2
0.10
0.20
0.30
0.004
0.008
0.012
E
1.53
1.60
1.70
0.060
0.063
0.067
1.53
1.60
1.70
0.060
0.063
0.067
E1
1.00
1.10
1.20
0.039
0.043
0.047
0.51
0.61
0.71
0.020
0.024
0.028
E2
0.20
0.25
0.30
0.008
0.010
0.012
E3
0.32
0.37
0.42
0.013
0.015
0.017
e
0.50 BSC
0.020 BSC
0.50 BSC
0.020 BSC
K
0.180 TYP
0.007 TYP
0.245 TYP
0.010 TYP
K1
0.275 TYP
0.011 TYP
0.320 TYP
0.013 TYP
K2
0.200 TYP
0.008 TYP
0.200 BSC
0.008 TYP
K3
0.255 TYP
0.010 TYP
K4
0.300 TYP
L
0.15
0.25
0.012 TYP
0.35
T
0.006
0.010
0.014
0.15
0.25
0.35
0.006
0.010
0.014
0.03
0.08
0.13
0.001
0.003
0.005
ECN: C-07431 − Rev. C, 06-Aug-07
DWG: 5935
Document Number: 73000
06-Aug-07
www.vishay.com
1
Application Note 826
Vishay Siliconix
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC75-6L Single
1.250 (0.049)
0.250 (0.01)
0.500 (0.02)
0.250 (0.01)
0.400 (0.016)
0.300 (0.012)
0.180 (0.007)
0.370 (0.015)
1.700 (0.067)
1.100
0.620 (0.024)
(0.043)
2.000 (0.079)
0.200 (0.008)
0.300 (0.012)
0.300 (0.012)
1
0.545 (0.021)
0.250 (0.01)
0.670 (0.026)
2.000 (0.079)
Dimensions in mm/(Inches)
Return to Index
APPLICATION NOTE
Document Number: 70488
Revision: 21-Jan-08
www.vishay.com
13
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
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all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000