SiZ340DT Datasheet

SiZ340DT
www.vishay.com
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
Channel-1
30
Channel-2
30
RDS(on) (Ω) MAX.
ID (A)
0.0095 at VGS = 10 V
30 a
0.0137 at VGS = 4.5 V
22
0.0051 at VGS = 10 V
40 a
0.0070 at VGS = 4.5 V
40 a
Qg (Typ.)
5.6 nC
10.1 nC
APPLICATIONS
PowerPAIR® 3 x 3
G2
S2 8
S2 7
S2 6
5
S1/D2
1
m
3m
Top View
G1
• POL
D1
m
m
D1
• Synchronous buck
- Battery charging
- Computer system power
- Graphic cards
(Pin 9)
3
• PowerPAIR®
Optimizes high-side
and
low-side MOSFETs for synchronous buck
converters
• TrenchFET® power Mosfets
• 100 % Rg and UIS tested
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
N-Channel 1
MOSFET
1
2 G1
3 D1
4 D1
D1
Bottom View
S1/D2
G2
N-Channel 2
MOSFET
Ordering Information:
SiZ340DT-T1-GE3 (lead (Pb)-free and halogen-free)
S2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Channel-1
Channel-2
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
+20, -16
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
IDM
Pulsed Drain Current (t = 100 μs)
Continuous Source Drain Diode Current
Avalanche Current
Single Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
IS
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d,e
TJ, Tstg
V
30 a
40 a
26.5
40 a
15.6 b,c
22.6 b,c
12.4 b,c
18.1 b,c
100
150
13.9
26
3.1 b,c
3.5 b,c
10
15
5
11
16.7
31
10.7
20
3.7 b,c
4.2 b,c
2.4 b,c
2.7 b,c
-55 to 150
260
Unit
A
mJ
W
°C
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR 3 x 3 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components.
S14-0611-Rev. B, 24-Mar-14
Document Number: 62877
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiZ340DT
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Channel-1
Typ.
Max.
Channel-2
Typ.
Max.
Maximum Junction-to-Ambient a,b
t ≤ 10 s
RthJA
27
34
24
30
Maximum Junction-to-Case (Drain)
Steady State
RthJC
6
7.5
3.2
4
Min.
Typ.
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
30
30
1
1
10
10
-
18.4
30
-4.3
-5
0.0079
0.0042
0.0110
0.0058
37
60
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
0.042
0.025
0.3
0.3
760
1552
250
450
32
40
12.3
22.6
5.6
10.1
2.3
4.2
1
1.8
6.6
12.4
1.7
1.3
Unit
°C/W
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. Maximum under steady state conditions is 69 °C/W for channel-1 and 64 °C/W for channel-2.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
TEST CONDITIONS
Max.
Unit
Static
VDS
VGS = 0 V, ID = 250 μA
ΔVDS/TJ
ID = 250 μA
ΔVGS(th)/TJ
ID = 250 μA
VGS(th)
VDS = VGS, ID = 250 μA
Gate Source Leakage
IGSS
VDS =0 V, VGS = +20 V, -16 V
Zero Gate Voltage Drain Current
IDSS
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate Threshold Voltage
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS =0 V, TJ = 55 °C
On-State Drain Current b
Drain-Source On-State Resistance
Forward Transconductance b
VDS ≥ 5 V,VGS = 10 V
ID(on)
b
VGS = 10 V, ID = 15.6 A
VGS = 10 V, ID = 20 A
VGS = 4.5 V, ID = 13 A
VGS = 4.5 V, ID = 20 A
VDS = 15 V, ID = 15.6 A
VDS = 15 V, ID = 20 A
RDS(on)
gfs
V
mV/°C
2.4
V
2.4
± 100
nA
± 100
1
1
μA
5
5
A
0.0095
0.0051
Ω
0.0137
0.0070
S
-
Dynamica
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS
Channel-1
= 15 V, VGS = 0 V, f = 1 MHz
VDS
Channel-2
=15 V, VGS = 0 V, f = 1 MHz
Crss / Ciss Ratio
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Output Charge
Gate Resistance
S14-0611-Rev. B, 24-Mar-14
Qgd
VDS = 15 V, VGS = 10 V, ID = 15.6 A
VDS = 15 V, VGS = 10 V, ID = 20 A
Channel-1
VDS = 15 V,VGS = 4.5 V, ID = 15.6 A
Channel-2
VDS = 15 V,VGS = 4.5 V, ID = 20 A
Qoss
Rg
f = 1 MHz
0.084
0.050
19
35
9
16
3.4
2.6
pF
-
nC
Ω
Document Number: 62877
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiZ340DT
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
TEST CONDITIONS
Min.
Typ.
Max.
-
13
20
Unit
Dynamic a
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Ch-1
td(on)
Channel-1
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
tr
td(off)
Chan nel-2
VDD =15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
tf
td(on)
Channel-1
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
tr
td(off)
Channel-2
VDD =15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
tf
Ch-2
-
22
33
Ch-1
-
55
85
Ch-2
-
82
123
Ch-1
-
16
25
Ch-2
-
20
30
Ch-1
-
7
14
Ch-2
-
7
14
Ch-1
-
8
16
Ch-2
-
10
20
Ch-1
-
11
20
Ch-2
-
12
20
Ch-1
-
12
20
Ch-2
-
16
30
Ch-1
-
7
15
Ch-2
-
7
12
Ch-1
-
-
13.9
Ch-2
-
-
25.8
Ch-1
-
-
100
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current (t = 100 μs)
Body Diode Voltage
TC = 25 °C
IS
ISM
IS = 10 A, VGS = 0 V
VSD
Ch-2
-
-
150
Ch-1
-
0.8
1.2
Ch-2
-
0.82
1.2
Ch-1
-
20
35
Ch-2
-
26
40
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Channel-1
IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C
Ch-1
-
9
20
Ch-2
-
20
30
Reverse Recovery Fall Time
ta
Channel-2
IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C
Ch-1
-
11.5
-
Ch-2
-
18.1
-
Ch-1
-
8.5
-
Ch-2
-
7.9
-
Reverse Recovery Rise Time
tb
A
V
ns
nC
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S14-0611-Rev. B, 24-Mar-14
Document Number: 62877
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiZ340DT
www.vishay.com
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
50
5
VGS = 10 V thru 4 V
4
ID - Drain Current (A)
ID - Drain Current (A)
40
30
VGS = 3 V
20
TC = 25 °C
3
2
TC = 125 °C
1
10
TC = - 55 °C
VGS = 2 V
0
0
0
0.5
1
1.5
VDS - Drain-to-Source Voltage (V)
2
0.6
0
1.2
1.8
2.4
3
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.020
900
720
0.015
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
Ciss
VGS = 4.5 V
0.010
VGS = 10 V
0.005
540
360
Coss
180
Crss
0
0
0
10
20
30
ID - Drain Current (A)
40
50
0
5
10
15
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1.7
10
ID = 15.6 A
ID = 15.6 A
RDS(on) - On-Resistance (Normalized)
VDS = 8 V
VGS - Gate-to-Source Voltage (V)
20
8
6
VDS = 15 V
VDS = 24 V
4
2
0
0
2.6
5.2
7.8
10.4
Qg - Total Gate Charge (nC)
Gate Charge
S14-0611-Rev. B, 24-Mar-14
13
VGS = 10 V
1.45
VGS = 4.5 V
1.2
0.95
0.7
- 50
- 25
0
25
50
75
100
TJ - Junction Temperature (°C)
125
150
On-Resistance vs. Junction Temperature
Document Number: 62877
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiZ340DT
www.vishay.com
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.02
100
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
ID = 15.6 A
TJ = 150 °C
10
TJ = 25 °C
1
0.1
0.0
0.015
TJ = 125 °C
0.01
TJ = 25 °C
0.005
0
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
1.2
2
Source-Drain Diode Forward Voltage
4
6
8
VGS - Gate-to-Source Voltage (V)
10
On-Resistance vs. Gate-to-Source Voltage
50
1.7
40
Power (W)
VGS(th) (V)
1.5
ID = 250 μA
1.3
30
20
1.1
10
0.9
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
TJ - Temperature (°C)
0.1
1
10
100
1000
Time (s)
Threshold Voltage
Single Pulse Power
1000
ID - Drain Current (A)
100
Limited by RDS(on)*
10
100 μs
1 ms
1
10 ms
100 ms
1s
10 s
DC
0.1
TA = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
S14-0611-Rev. B, 24-Mar-14
Document Number: 62877
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiZ340DT
www.vishay.com
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
40
ID - Drain Current (A)
30
Package limited
20
10
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
20
2.2
15
1.7
Power (W)
Power (W)
Current Derating*
10
1.1
0.6
5
0.0
0
0
25
50
75
100
TC - Case Temperature (°C)
Power, Junction-to-Case
125
150
0
25
50
75
100
TA - Ambient Temperature (°C)
125
150
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S14-0611-Rev. B, 24-Mar-14
Document Number: 62877
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiZ340DT
www.vishay.com
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
t1
t2
1. Duty Cycle, D =
0.05
0.02
t1
t2
2. Per Unit Base = RthJA = 69 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
S14-0611-Rev. B, 24-Mar-14
Document Number: 62877
7
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiZ340DT
www.vishay.com
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
60
5
VGS = 10 V thru 4 V
4
30
ID - Drain Current (A)
ID - Drain Current (A)
45
VGS = 3 V
3
TC = 25 °C
2
15
TC = 125 °C
1
TC = - 55 °C
0
0
0
0.5
1
1.5
2
0
VDS - Drain-to-Source Voltage (V)
0.6
1.2
1.8
2.4
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
3
1800
0.010
1350
0.008
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
Ciss
VGS = 4.5 V
0.006
VGS = 10 V
900
450
0.004
Coss
Crss
0
0.002
0
15
30
ID - Drain Current (A)
45
0
60
6
12
18
24
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
10
1.7
ID = 20 A
ID = 20 A
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
VDS =15 V
8
6
VDS = 8 V
VDS = 24 V
4
2
0
0
30
6
12
18
Qg - Total Gate Charge (nC)
Gate Charge
S14-0611-Rev. B, 24-Mar-14
24
VGS = 10 V
1.45
VGS = 4.5 V
1.2
0.95
0.7
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 62877
8
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiZ340DT
www.vishay.com
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.020
100
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
ID = 20 A
TJ = 150 °C
10
TJ = 25 °C
1
0.015
0.010
TJ = 125 °C
0.005
TJ = 25 °C
0.1
0
0.0
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
2
1.2
Source-Drain Diode Forward Voltage
4
6
8
VGS - Gate-to-Source Voltage (V)
10
On-Resistance vs. Gate-to-Source Voltage
50
2
40
Power (W)
VGS(th) (V)
1.7
ID = 250 μA
1.4
30
20
1.1
10
0.8
0
- 50
- 25
0
25
50
75
100
TJ - Temperature (°C)
125
150
0.001
0.01
Threshold Voltage
0.1
1
Time (s)
10
100
1000
Single Pulse Power
1000
100
ID - Drain Current (A)
Limited by RDS(on)*
100 μs
10
1 ms
10 ms
1
100 ms
1s
10 s
DC
0.1
TA = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
Safe Operating Area, Junction-to-Ambient
S14-0611-Rev. B, 24-Mar-14
Document Number: 62877
9
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiZ340DT
www.vishay.com
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
68
ID - Drain Current (A)
51
Package Limited
34
17
0
0
25
50
75
100
TC - Case Temperature (°C)
125
150
Current Derating*
28.5
2.1
Power (W)
2.8
Power (W)
38
19
1.4
0.7
9.5
0
0.0
0
25
50
75
100
TC - Case Temperature (°C)
Power, Junction-to-Case
125
150
0
25
50
75
100
TA - Ambient Temperature (°C)
125
150
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S14-0611-Rev. B, 24-Mar-14
Document Number: 62877
10
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiZ340DT
www.vishay.com
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 64 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62877.
S14-0611-Rev. B, 24-Mar-14
Document Number: 62877
11
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAIR® 3 x 3 Case Outline
D
8
7
6
A
A1
5
K2
D2
5
6
K2
7
8
E1
K
L
d 0.10 C
2X
*
1
2
3
d 0.10 C
2X
0.10
4
0.15
4
3
2
1
e
b
b1
0.10 C
A
f
E2
K1
E
9
Note
* Indicates pin #1 orientation (optional)
c
C
d
0.08 C
MILLIMETERS
INCHES
DIM.
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.70
0.75
0.80
0.028
0.030
0.031
A1
0.00
0.05
0.000
b
0.35
0.40
0.45
0.014
0.016
0.018
b1
0.20
0.25
0.38
0.008
0.010
0.015
C
0.18
0.20
0.23
0.007
0.008
0.009
D
2.90
3.00
3.10
0.114
0.118
0.122
D2
2.35
2.40
2.45
0.093
0.094
0.096
E
2.90
3.00
3.10
0.114
0.118
0.122
E1
0.94
0.99
1.04
0.037
0.039
0.041
E2
0.47
0.52
0.57
0.019
0.020
0.022
e
0.002
0.65 BSC
0.026 BSC
K
0.25 typ.
0.010 typ.
K1
0.35 typ.
0.014 typ.
K2
0.30 typ.
L
0.27
0.32
0.012 typ.
0.37
0.011
0.013
0.015
ECN: T12-0347-Rev. C, 18-Jun-12
DWG: 5998
Revison: 18-Jun-12
1
Document Number: 67698
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PAD Pattern
Vishay Siliconix
RECOMMENDED MINIMUM PAD FOR PowerPAIR® 3 x 3
0.450
0.650
(0.018)
(0.026)
0.450
(0.018)
1.036
2.450
(0.096)
0.084
(0.003)
(0.041)
0.209
(0.008)
0.306
(0.012)
0.562
(0.022)
(0.063)
1.611
0.390
(0.015)
1.200
(0.047)
Recommended PAD for PowerPAIR 3 x 3
Dimensions in millimeters (inches)
Keep-Out 3.5 mm x 3.5 mm for non terminating traces
Document Number: 63294
Revision: 25-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000