SiA449DJ Datasheet

SiA449DJ
Vishay Siliconix
P-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 30
RDS(on) () (Max.)
ID (A)
0.020 at VGS = - 10 V
- 12a
0.024 at VGS = - 4.5 V
- 12a
0.038 at VGS = - 2.5 V
a
Qg (Typ.)
23.1 nC
- 12
PowerPAK SC-70-6L-Single
APPLICATIONS
• Providing low voltage drop in
1
D
3
G
D
5
S
D
2.05 mm
S
Smart Phones, Tablet PCs,
Mobile Computing:
- Power Management
- Charger Switches
- Load Switches
- DC/DC Converters
2
D
6
• TrenchFET® Power MOSFET
• Thermally Enhanced PowerPAK® SC-70 Package
- Small Footprint Area
- Low On-Resistance
• 100 % Rg Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
G
2.05 mm
S
4
Marking Code
BWX
Ordering Information:
SiA449DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
Part # code
D
XXX
Lot Traceability
and Date code
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
- 30
Gate-Source Voltage
VGS
± 12
TC = 70 °C
TA = 25 °C
- 12a
ID
- 10.4b, c
- 8.3b, c
TA = 70 °C
IDM
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 70 °C
TA = 25 °C
- 12a
IS
- 2.9b, c
19
12
PD
W
3.5b, c
2.2b, c
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
A
- 30
TC = 25 °C
Maximum Power Dissipation
V
- 12a
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
Unit
- 55 to 150
Soldering Recommendations (Peak Temperature)d, e
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
Symbol
Typical
Maximum
t5s
RthJA
28
36
Steady State
RthJC
5.3
6.5
Unit
°C/W
Notes:
a. Package limited
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
Document Number: 62644
S13-1993-Rev. B, 23-Sep-13
For technical questions, contact: [email protected]
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA449DJ
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0, ID = - 250 µA
- 30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
IGSS
Gate-Source Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
- 22
ID = - 250 µA
VGS(th) Temperature Coefficient
gfs
mV/°C
3
- 1.5
V
VDS = 0 V, VGS = ± 12 V
± 100
nA
VDS = - 30 V, VGS = 0 V
-1
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
- 10
VDS - 5 V, VGS = - 10 V
RDS(on)
V
- 0.6
- 10
µA
A
VGS = - 10 V, ID = - 6 A
0.0155
0.0200
VGS = - 4.5 V, ID = - 5 A
0.0185
0.0240
VGS = - 2.5 V, ID = - 2 A
0.0264
0.0380
VDS = - 15 V, ID = - 6 A
31

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
2140
VDS = - 15 V, VGS = 0 V, f = 1 MHz
VDS = - 15 V, VGS = - 10 V, ID = - 10.4 A
VDS = - 15 V, VGS = - 4.5 V, ID = - 10.4 A
VDD = - 15 V, RL = 1.8 
ID  - 8.3 A, VGEN = - 10 V, Rg = 1 
tr
Turn-Off Delay Time
td(off)
Fall Time
Turn-On Delay Time
Rise Time
72
35
2.5
0.6
3.3
6.6
8
16
10
20
39
60
tf
8
16
26
40
28
42
VDD = - 15 V, RL = 1.8 
ID  - 8.3 A, VGEN = - 4.5 V, Rg = 1 
td(off)
Fall Time
48
23.1
td(on)
tr
Turn-Off Delay Time
pF
nC
6.2
f = 1 MHz
td(on)
Rise Time
168
155
tf
44
66
8
16

ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
- 12
- 30
IS = - 8.3 A, VGS = 0
IF = - 8.3 A, dI/dt = 100 A/µs, TJ = 25 °C
A
- 0.8
- 1.2
V
19
30
ns
12
20
nC
12
7
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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For technical questions, contact: [email protected]
Document Number: 62644
S13-1993-Rev. B, 23-Sep-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA449DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
30
VGS = 10 V thru 3V
0.8
VGS = 2 V
12
0.4
0.2
0
0
0.5
1
1.5
TC = 25 °C
0.6
6
0
RDS(on) - On-Resistance (Ω)
ID - Drain Current (A)
18
TC = 125 °C
TC = - 55 °C
0
2
0.45
0.9
1.35
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.040
3500
0.034
2800
C - Capacitance (pF)
ID - Drain Current (A)
24
VGS = 2.5 V
0.028
0.022
VGS = 4.5 V
1.8
Ciss
2100
1400
700
0.016
VGS = 10 V
Coss
Crss
0
0.010
0
6
12
18
24
0
30
3
6
9
12
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
1.7
8
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
ID = 10.4 A
VDS = 8 V
6
VDS = 9.6 V
4
VDS = 15 V
2
0
1.48
1.26
VGS = 4.5 V, 5 A
VGS = 10 V, 6 A
1.04
0.82
0.6
0
10
20
30
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 62644
S13-1993-Rev. B, 23-Sep-13
40
50
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
For technical questions, contact: [email protected]
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3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA449DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.05
ID = 6 A
0.04
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
10.0
TJ = 150 °C
1.0
TJ = 25 °C
0.03
TJ = 125 °C
0.02
TJ = 25 °C
0.01
0.1
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
VSD - Source-to-Drain Voltage (V)
4
6
8
10
VGS - Gate-to-Source Voltage (V)
Soure-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
30
1.05
25
0.9
Power (W)
VGS(th) (V)
20
ID = 250 μA
0.75
15
10
0.6
5
0.45
- 50
- 25
0
25
50
75
100
125
150
0
0.001
TJ - Temperature (°C)
0.01
0.1
1
Time (s)
10
100
1000
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
Limited by RDS(on)*
ID - Drain Current (A)
10
100 μs
1 ms
1
10 ms
100 ms
10 s, 1s
0.1
DC
TA = 25 °C
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4
For technical questions, contact: [email protected]
Document Number: 62644
S13-1993-Rev. B, 23-Sep-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA449DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
28
ID - Drain Current (A)
21
14
7
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
24
2
18
1.5
Power (W)
Power (W)
Current Derating*
12
6
1
0.5
0
0
0
25
50
75
100
125
150
0
25
50
75
100
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power Junction-to-Case
Power Junction-to-Ambient
125
150
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 62644
S13-1993-Rev. B, 23-Sep-13
For technical questions, contact: [email protected]
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA449DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.05
PDM
0.1
t1
0.02
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 80 C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
10-4
10-3
4. Surface Mounted
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
10-4
0.05
0.02
Single Pulse
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62644.
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6
For technical questions, contact: [email protected]
Document Number: 62644
S13-1993-Rev. B, 23-Sep-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
b
e
PIN1
PIN3
PIN1
PIN2
PIN3
PIN5
K1
E1
E1
K
PIN6
K3
D1
D1
K
D2
D1
E3
E1
E2
K4
K
L
PIN2
b
e
L
PowerPAK® SC70-6L
PIN6
PIN4
K2
PIN5
K1
K2
BACKSIDE VIEW OF SINGLE
PIN4
K2
BACKSIDE VIEW OF DUAL
A
D
C
A1
E
Notes:
1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating
Z
z
DETAIL Z
SINGLE PAD
DIM
A
MILLIMETERS
DUAL PAD
INCHES
MILLIMETERS
INCHES
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
0.675
0.75
0.80
0.027
0.030
0.032
0.675
0.75
0.80
0.027
0.030
0.032
A1
0
-
0.05
0
-
0.002
0
-
0.05
0
-
0.002
b
0.23
0.30
0.38
0.009
0.012
0.015
0.23
0.30
0.38
0.009
0.012
0.015
C
0.15
0.20
0.25
0.006
0.008
0.010
0.15
0.20
0.25
0.006
0.008
0.010
D
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
D1
0.85
0.95
1.05
0.033
0.037
0.041
0.513
0.613
0.713
0.020
0.024
0.028
D2
0.135
0.235
0.335
0.005
0.009
0.013
E
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
E1
1.40
1.50
1.60
0.055
0.059
0.063
0.85
0.95
1.05
0.033
0.037
0.041
E2
0.345
0.395
0.445
0.014
0.016
0.018
E3
0.425
0.475
0.525
0.017
0.019
0.021
e
0.65 BSC
0.026 BSC
0.65 BSC
0.026 BSC
K
0.275 TYP
0.011 TYP
0.275 TYP
0.011 TYP
K1
0.400 TYP
0.016 TYP
0.320 TYP
0.013 TYP
K2
0.240 TYP
0.009 TYP
0.252 TYP
0.010 TYP
K3
0.225 TYP
0.009 TYP
K4
L
0.355 TYP
0.175
0.275
0.014 TYP
0.375
T
0.007
0.011
0.015
0.175
0.275
0.375
0.007
0.011
0.015
0.05
0.10
0.15
0.002
0.004
0.006
ECN: C-07431 − Rev. C, 06-Aug-07
DWG: 5934
Document Number: 73001
06-Aug-07
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1
Application Note 826
Vishay Siliconix
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single
0.300 (0.012)
0.650 (0.026)
0.350 (0.014)
0.275 (0.011)
0.550 (0.022)
0.475 (0.019)
2.200 (0.087)
1.500
(0.059)
0.870 (0.034)
0.235 (0.009)
0.355 (0.014)
0.350 (0.014)
1
0.650 (0.026)
0.300 (0.012)
0.950 (0.037)
Dimensions in mm/(Inches)
Return to Index
APPLICATION NOTE
Document Number: 70486
Revision: 21-Jan-08
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12
1
Document Number: 91000