Si8902AEDB Datasheet

Si8902AEDB
www.vishay.com
Vishay Siliconix
N-Channel 24 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
24
• TrenchFET® power MOSFET
RS1S2 (Ω) Max.
IS1S2 (A) a
0.028 at VGS = 4.5 V
5.9
• Small 2.4 mm x 1.6 mm outline
0.029 at VGS = 3.7 V
5.8
• Thin 0.6 mm max. height
0.031 at VGS = 2.5 V
5.6
• Typical ESD protection 5000 V (HBM)
0.037 at VGS = 1.8 V
5.1
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
VS1S2 (V)
APPLICATIONS
MICRO FOOT® 2.4 x 1.6 S
1
1.
6
E
2A
0
9
8 xxx
m
m
1
mm
2.4
Backside View
S2
4
G1
3
S1
• Battery protection switch
2
• Bi-directional switch
G1
6
G2
R
1
S1
5
S2
Bump Side View
R
G2
Marking Code: 8902AE
Ordering Information:
Si8902AEDB-T2-E1 (Lead (Pb)-free and Halogen-free)
N-Channel
S2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Source 1-to-Source 2 Voltage
Gate-Source Voltage
Symbol
Limit
VS1S2
24
VGS
± 12
TC = 85 °C
7.9 b
IS1S2
TA = 25 °C
5.9 a
A
4.3 a
TA = 85 °C
Pulsed Source 1-to-Source 2 Current (t = 100 μs)
ISM
40
5.7 b
TC = 25 °C
TC = 85 °C
Maximum Power Dissipation
V
11 b
TC = 25 °C
Continuous Source 1-to-Source 2 Current
(TJ = 150 °C)
Unit
3b
PD
TA = 25 °C
W
1.7 a
0.9 a
TA = 85 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 150
Soldering Recommendations (Peak Temperature) c
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient a, d
Maximum Junction-to-Case b
Symbol
Typical
Maximum
t≤5s
RthJA
60
75
Steady State
RthJC
18
22
Unit
°C/W
Notes
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
b. The case is defined as the top surface of the package.
c. Refer to IPC/JEDEC® (J-STD-020), no manual or hand soldering.
d. Maximum under steady state conditions is 120 °C/W.
S15-1171-Rev. B, 25-May-15
Document Number: 62948
1
For technical questions, contact: [email protected]
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Si8902AEDB
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SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Source 1-to-Source 2 Breakdown Voltage
VS1S2
VGS = 0 V, IS = 250 μA
24
-
-
V
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
IS = 250 μA
-
3
-
mV/°C
Gate-Source Threshold Voltage
VGS(th)
Gate-Source Leakage
IGSS
Zero Gate Voltage Source Current
IS1S2
On-State Source Current a
IS(on)
Source1-to-Source 2 On-State Resistance a
Forward
Transconductance a
VSS = VGS , IS = 250 μA
0.4
-
0.9
V
VSS = 0 V, VGS = ± 4.5 V
-
-
± 0.2
μA
VSS = 0 V, VGS = ± 12 V
-
-
± 10
mA
VSS = 24 V, VGS = 0 V
-
-
1
VSS = 24 V, VGS = 0 V, TJ = 85 °C
-
-
10
VSS ≥ 5 V, VGS = 4.5 V
5
-
-
VGS = 4.5 V, ISS = 1 A
-
0.0215
0.0280
μA
A
VGS = 3.7 V, ISS = 1 A
-
0.0222
0.0290
VGS = 2.5 V, ISS = 1 A
-
0.0240
0.0310
VGS = 1.8 V, ISS = 1 A
-
0.0260
0.0370
gfs
VSS = 10 V, ISS = 1 A
-
15
-
S
Rg
f = 1 MHz
kΩ
RS1S2
Ω
Dynamic b
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
VSS = 12.5 V, RL = 12.5 Ω
ISS ≅ 1 A, VGEN = 4.5 V, Rg = 1 Ω
-
5.3
-
-
1.5
3
-
3.5
7
-
25
50
tf
-
12
25
td(on)
-
0.7
1.4
-
1.3
2.6
-
35
70
-
12
25
tr
td(off)
tf
VSS = 12.5 V, RL = 12.5 Ω
ISS ≅ 1 A, VGEN = 10 V, Rg = 1 Ω
μs
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-1171-Rev. B, 25-May-15
Document Number: 62948
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8902AEDB
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10-2
1.5
10-3
0.9
IGSS - Gate Current (A)
IGSS - Gate Current (mA)
1.2
TJ = 25 °C
0.6
10-4
TJ = 150 °C
10-5
TJ = 25 °C
10-6
10-7
0.3
10-8
10-9
0
0
3
6
9
12
0
3
6
9
12
VGS - Gate-to-Source Voltage (V)
VGS - Gate-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
40
10
VGS = 5 V thru 3 V
VGS = 2.5 V
8
ID - Drain Current (A)
ID - Drain Current (A)
30
VGS = 1.5 V
20
6
TC = 25 °C
4
10
TC = 125 °C
2
VGS = 1 V
TC = - 55 °C
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.4
0.6
0.8
1.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1.2
1.7
0.04
RDS(on) - On-Resistance (Normalized)
0.05
RDS(on) - On-Resistance (Ω)
0.2
VGS = 1.8 V
VGS = 3.7 V
0.03
VGS = 2.5 V
0.02
VGS = 4.5 V
0.01
VGS = 4.5 V, 3.7 V, 2.5 V, 1.8V; ID = 1A
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0
0
5
10
15
20
25
30
- 50
- 25
0
25
50
75
100
125
ID - Drain Current (A)
TJ - Junction Temperature (°C)
On-Resistance vs. Drain Current
On-Resistance vs. Junction Temperature
S15-1171-Rev. B, 25-May-15
150
Document Number: 62948
3
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Si8902AEDB
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Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.06
0.8
0.7
ID = 1 A
0.6
0.04
TJ = 125 °C
VGS(th) (V)
RDS(on) - On-Resistance (Ω)
0.05
0.03
0.02
TJ = 25 °C
0.4
ID = 250 μA
0.3
0.01
0.2
0.1
0
0
1
2
3
4
- 50
5
- 25
0
25
50
75
VGS - Gate-to-Source Voltage (V)
TJ - Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
100
100
125
150
30
25
TJ = 150 °C
10
20
Power (W)
IS - Source Current (A)
0.5
TJ = 25 °C
1
15
10
5
0.1
0.0
0.3
0.6
0.9
1.2
1.5
0
0.01
0.1
1
10
100
1000
VSD - Source-to-Drain Voltage (V)
Time (s)
Source-Drain Diode Forward Voltage
Single Pulse Power (Junction-to-Ambient)
S15-1171-Rev. B, 25-May-15
Document Number: 62948
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8902AEDB
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Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
IDM Limited
Limited by RDS(on)*
ID(on)Limited
100 µs
ID - Drain Current (A)
10
1 ms
10 ms
1
100 ms
0.1
10 s
1s
DC
TA = 25 °C
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
6
1.4
5
1.2
1.0
4
Power (W)
ID - Drain Current (A)
Safe Operating Area, Junction-to-Ambient
3
0.8
0.6
2
0.4
1
0.2
0
0
25
50
75
100
125
TA - Ambient Temperature (°C)
Current Derating*
150
0
0
25
50
75
100
125
150
TA - Case Temperature (°C)
Power Derating
Note
• When mounted on 1" x 1" FR4 with full copper.
* The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-ambient thermal resistance, and is more useful in
settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating,
when this rating falls below the package limit.
S15-1171-Rev. B, 25-May-15
Document Number: 62948
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8902AEDB
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
2.
t1
t2
PER UNIT BASE = RTHJA
=
120°C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10- 4
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Ambient (On 1" x 1" FR4 board with maximum copper)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
Square Wave Pulse Duration (s)
10-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Normalized Thermal Transient Impedance, Junction-to-Case (on 1" x 1" FR4 board with minimum copper)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62948.
S15-1171-Rev. B, 25-May-15
Document Number: 62948
6
For technical questions, contact: [email protected]
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Package Information
www.vishay.com
Vishay Siliconix
MICRO FOOT®: 6-Bumps
(1.6 mm x 2.4 mm, 0.8 mm Pitch, 0.290 mm Bump Height)
E
6x Ø b1
Mark on backside of die
e
e
S2
G1
S1
S2
G2
S1
D
e
XXXXXX
XXX
S
S
b1
Note 5
6x 0.30 to 0.31
(Note 3)
Solder mask-0.4
Note 2
A1
A
e
A2
b
K
e
b Diameter bump
(Note 1)
e
Recommended land pattern
Notes
1. Bumps are 95.5/3.8/0.7 Sn/Ag/Cu.
2. Backside surface is coated with a Ti/Ni/Ag layer.
3. Non-solder mask defined copper landing pad.
4. Laser marks on the silicon die back.
5. “b1” is the diameter of the solderable substrate surface, defined by an opening in the solder resist layer solder mask defined.
6. • is the location of pin 1
DIM.
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.550
0.575
0.600
0.0217
0.0226
0.0236
A1
0.260
0.275
0.290
0.0102
0.0108
0.0114
A2
0.290
0.300
0.310
0.0114
0.0118
0.0122
b
0.370
0.390
0.410
0.0146
0.0153
0.0161
b1
0.300
e
0.0118
0.800
0.0314
s
0.360
0.380
0.400
0.0141
0.0150
D
1.520
1.560
1.600
0.0598
0.0614
0.0157
0.0630
E
2.320
2.360
2.400
0.0913
0.0929
0.0945
K
0.155
0.185
0.215
0.0061
0.0072
0.0084
Note
• Use millimeters as the primary measurement.
ECN: T15-0143-Rev. A, 27-Apr-15
DWG: 6036
Revision: 27-Apr-15
1
Document Number: 69350
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AN824
Vishay Siliconix
PCB Design and Assembly Guidelines
For MICRO FOOTr Products
Johnson Zhao
INTRODUCTION
Vishay Siliconix’s MICRO FOOT product family is based on a
wafer-level chip-scale packaging (WL-CSP) technology that
implements a solder bump process to eliminate the need for an
outer package to encase the silicon die. MICRO FOOT
products include power MOSFETs, analog switches, and
power ICs.
For battery powered compact devices, this new packaging
technology reduces board space requirements, improves
thermal performance, and mitigates the parasitic effect typical
of leaded packaged products. For example, the 6−bump
MICRO FOOT Si8902EDB common drain power MOSFET,
which measures just 1.6 mm x 2.4 mm, achieves the same
performance as TSSOP−8 devices in a footprint that is 80%
smaller and with a 50% lower height profile (Figure 1). A
MICRO FOOT analog switch, the 6−bump DG3000DB, offers
low charge injection and 1.4 W on−resistance in a footprint
measuring just 1.08 mm x 1.58 mm (Figure 2).
Vishay Siliconix MICRO FOOT products can be handled with
the same process techniques used for high-volume assembly
of packaged surface-mount devices. With proper attention to
PCB and stencil design, the device will achieve reliable
performance without underfill. The advantage of the device’s
small footprint and short thermal path make it an ideal option
for space-constrained applications in portable devices such as
battery packs, PDAs, cellular phones, and notebook
computers.
This application note discusses the mechanical design and
reliability of MICRO FOOT, and then provides guidelines for
board layout, the assembly process, and the PCB rework
process.
FIGURE 1. 3D View of MICRO FOOT Products Si8902DB and
Si8900EDB
3
2
1
0.18 ~ 0.25
A
1.08
0.5
B
0.285
0.285
0.5
1.58
FIGURE 2. Outline of MICRO FOOT CSP & Analog
Switch DG3000DB
Document Number: 71990
06-Jan-03
www.vishay.com
1
AN824
Vishay Siliconix
TABLE 1
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Main Parameters of Solder Bumps in MICRO FOOT Designs
MICRO FOOT CSP
Bump Material
MICRO FOOT CSP MOSFET
Eutectic Solder:
63Sm/37Pb
MICRO FOOT CSP Analog Switch
MICRO FOOT UCSP Analog Switch
Bump Pitch*
Bump Diameter*
Bump Height*
0.8
0.37-0.41
0.26-0.29
0.5
0.18-0.25
0.14-0.19
0.5
0.32-0.34
0.21-0.24
* All measurements in millimeters
MICRO FOOT’S DESIGN AND RELIABILITY
BOARD LAYOUT GUIDELINES
As a mechanical, electrical, and thermal connection between
the device and PCB, the solder bumps of MICRO FOOT
products are mounted on the top active surface of the die.
Table 1 shows the main parameters for solder bumps used in
MICRO FOOT products. A silicon nitride passivation layer is
applied to the active area as the last masking process in
fabrication,ensuring that the device passes the pressure pot
test. A green laser is used to mark the backside of the die
without damaging it. Reliability results for MICRO FOOT
products mounted on a FR-4 board without underfill are shown
in Table 2.
Board materials. Vishay Siliconix MICRO FOOT products are
designed to be reliable on most board types, including organic
boards such as FR-4 or polyamide boards. The package
qualification information is based on the test on 0.5-oz. FR-4
and polyamide boards with NSMD pad design.
TABLE 2
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
MICRO FOOT Reliability Results
Test Condition C: −65_ to 150_C
>500 Cycles
Test condition B: −40_ to 125_C
>1000 Cycles
121_C @ 15PSI 100% Humidity Test
96 Hours
The main failure mechanism associated with wafer-level
chip-scale packaging is fatigue of the solder joint. The results
shown in Table 2 demonstrate that a high level of reliability can
be achieved with proper board design and assembly
techniques.
Land patterns. Two types of land patterns are used for
surface-mount packages. Solder mask defined (SMD) pads
have a solder mask opening smaller than the metal pad
(Figure 3), whereas on-solder mask defined (NSMD) pads
have a metal pad smaller than the solder-mask opening
(Figure 4).
NSMD is recommended for copper etch processes, since it
provides a higher level of control compared to SMD etch
processes. A small-size NSMD pad definition provides more
area (both lateral and vertical) for soldering and more room for
escape routing on the PCB. By contrast, SMD pad definition
introduces a stress concentration point near the solder mask
on the PCB side that may result in solder joint cracking under
extreme fatigue conditions.
Copper pads should be finished with an organic solderability
preservative
(OSP)
coating.
For
electroplated
nickel-immersion gold finish pads, the gold thickness must be
less than 0.5 mm to avoid solder joint embrittlement.
Solder Mask
Copper
Copper
FIGURE 3. SMD
www.vishay.com
2
Solder Mask
FIGURE 4. NSMD
Document Number: 71990
06-Jan-03
AN824
Vishay Siliconix
TABLE 3
Dimensions of Copper Pad and Solder Mask
Opening in PCB and Stencil Aperture
ÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁ
ÁÁÁÁÁ
Á
ÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁ
ÁÁÁÁÁ
Pitch
Copper Pad
Solder Mask
Opening
Stencil
Aperture
0.80 mm
0.30 " 0.01 mm
0.41 " 0.01 mm
0.33 " 0.01 mm
in ciircle aperture
0.50 mm
0.17 " 0.01 mm
0.27 " 0.01 mm
0.30 " 0.01 mm
in square aperture
ASSEMBLY PROCESS
MICRO FOOT products’ surface-mount-assembly operations
include solder paste printing, component placement, and
solder reflow as shown in the process flow chart (Figure 5).
Chip pick-and-placement. MICRO FOOT products can be
picked and placed with standard pick-and-place equipment.
The recommended pick-and-place force is 150 g. Though the
part will self-center during solder reflow, the maximum
placement offset is 0.02 mm.
Reflow Process. MICRO FOOT products can be assembled
using standard SMT reflow processes. Similar to any other
package, the thermal profile at specific board locations must
be determined. Nitrogen purge is recommended during reflow
operation. Figure 6 shows a typical reflow profile.
Thermal Profile
250
200
Temperature (_C)
Board pad design. The landing-pad size for MICRO FOOT
products is determined by the bump pitch as shown in Table 3.
The pad pattern is circular to ensure a symmetric,
barrel-shaped solder bump.
150
100
50
Stencil Design
IIncoming Tape and Reel Inspection
0
0
Solder Paste Printing
100
200
300
400
Time (Seconds
Chip Placement
FIGURE 6. Reflow Profile
Reflow
Solder Joint Inspection
Pack and Ship
FIGURE 5. SMT Assembly Process Flow
PCB REWORK
To replace MICRO FOOT products on PCB, the rework
procedure is much like the rework process for a standard BGA
or CSP, as long as the rework process duplicates the original
reflow profile. The key steps are as follows:
1.
Stencil design. Stencil design is the key to ensuring
maximum solder paste deposition without compromising the
assembly yield from solder joint defects (such as bridging and
extraneous solder spheres). The stencil aperture is dependent
on the copper pad size, the solder mask opening, and the
quantity of solder paste.
Remove the MICRO FOOT device using a convection
nozzle to create localized heating similar to the original
reflow profile. Preheat from the bottom.
2.
Once the nozzle temperature is +190_C, use tweezers to
remove the part to be replaced.
3.
In MICRO FOOT products, the stencil is 0.125-mm (5-mils)
thick. The recommended apertures are shown in Table 3 and
are fabricated by laser cut.
Resurface the pads using a temperature-controlled
soldering iron.
4.
Apply gel flux to the pad.
5.
Use a vacuum needle pick-up tip to pick up the
replacement part, and use a placement jig to placed it
accurately.
6.
Reflow the part using the same convection nozzle, and
preheat from the bottom, matching the original reflow
profile.
Solder-paste printing. The solder-paste printing process
involves transferring solder paste through pre-defined
apertures via application of pressure.
In MICRO FOOT products, the solder paste used is UP78
No-clean eutectic 63 Sn/37Pb type3 or finer solder paste.
Document Number: 71990
06-Jan-03
www.vishay.com
3
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Revision: 02-Oct-12
1
Document Number: 91000